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1. 发明授权

US07752910B2 Micromachined mass flow sensor and methods of making the same 有权
标题翻译：微加工质量流量传感器及其制造方法
公开(公告)号：US07752910B2
公开(公告)日：2010-07-13
申请号：US11985879
申请日：2008-04-03
申请人： Gaofeng Wang , Chih-Chang Chen , Yahong Yao , Liji Huang
发明人： Gaofeng Wang , Chih-Chang Chen , Yahong Yao , Liji Huang
IPC分类号： G01F1/68
CPC分类号： G03H1/0891 , G03H1/0244 , G03H1/08 , G03H2001/0858 , G03H2210/30 , G03H2210/454 , G03H2223/12 , G03H2240/13 , G03H2240/23
摘要： A mass flow sensor is supported on an N or P-type silicon substrate with orientation . This mass flow sensor comprises a central thin-film heater and a pair of thin-film heat sensing elements, and a thermally isolated membrane for supporting the heater and the sensors out of contact with the substrate base. The mass flow sensor is arranged for integration on a same silicon substrate to form a one-dimensional or two-dimensional array in order to expand the dynamic measurement range.
摘要翻译：质量流量传感器支撑在取向<100>的N或P型硅衬底上。该质量流量传感器包括中央薄膜加热器和一对薄膜热敏元件，以及用于支撑加热器的热隔离膜和与基板基板接触的传感器。质量流量传感器布置成集成在相同的硅衬底上以形成一维或二维阵列，以便扩大动态测量范围。

2. 发明申请

US20070017285A1 Micromachined thermal mass flow sensors and insertion type flow meters and manufacture methods 有权
标题翻译：微加工热质量流量传感器和插入式流量计及其制造方法
公开(公告)号：US20070017285A1
公开(公告)日：2007-01-25
申请号：US11157604
申请日：2005-06-21
申请人： Gaofeng Wang , Chih-Chang Chen , Yahong Yao , Liji Huang
发明人： Gaofeng Wang , Chih-Chang Chen , Yahong Yao , Liji Huang
IPC分类号： G01F1/68
CPC分类号： G01F1/6845
摘要： An integrated mass flow sensor is manufactured by a process of carrying out a micro-machining process on an N or P-type silicon substrate with orientation . This mass flow sensor comprises a central thin-film heater and a pair of thin-film heat sensing elements, and a thermally isolated membrane for supporting the heater and the sensors out of contact with the substrate base. The mass flow sensor is arranged for integration on a same silicon substrate to form a one-dimensional or two-dimensional array in order to expand the dynamic measurement range. For each sensor, the thermally isolated membrane is formed by a process that includes a step of first depositing dielectric thin-film layers over the substrate and then performing a backside etching process on a bulk silicon with TMAH or KOH or carrying out a dry plasma etch until the bottom dielectric thin-film layer is exposed. Before backside etching the bulk silicon, rectangular openings are formed on the dielectric thin-film layers by applying a plasma etching to separate the area of heater and sensing elements from the rest of the membrane. This mass flow sensor is operated with two sets of circuits, a first circuit for measuring a flow rate in a first range of flow rates and a second circuit for measuring a flow rate in a second range of flow rates, to significantly increase range of flow rate measurements, while maintains a high degree of measurement accuracy.
摘要翻译：通过在取向<100>的N型或P型硅衬底上进行微加工工艺的方法制造集成的质量流量传感器。该质量流量传感器包括中央薄膜加热器和一对薄膜热敏元件，以及用于支撑加热器的热隔离膜和与基板基板接触的传感器。质量流量传感器布置成集成在相同的硅衬底上以形成一维或二维阵列，以便扩大动态测量范围。对于每个传感器，热隔离膜通过包括首先在衬底上沉积电介质薄膜层然后用TMAH或KOH对体硅进行背面蚀刻工艺或进行干等离子体蚀刻的步骤来形成直到底部介电薄膜层暴露。在背面蚀刻体硅之前，通过施加等离子体蚀刻在电介质薄膜层上形成矩形开口，以将加热器的区域和感测元件与膜的其余部分分开。该质量流量传感器用两组电路操作，第一电路用于测量第一流量范围内的流量，以及用于测量在第二流量范围内的流量的第二电路，以显着增加流量范围速率测量，同时保持高度的测量精度。

3. 发明申请

US20090158859A1 Micromachined Thermal Mass Flow Sensor With Self-Cleaning Capability And Methods Of Making the Same 有权
标题翻译：具有自清洁能力的微加工热质量流量传感器及其制作方法
公开(公告)号：US20090158859A1
公开(公告)日：2009-06-25
申请号：US11960261
申请日：2007-12-19
申请人： Liji Huang , Chih-Chang Chen , Yahong Yao , Gaofeng Wang
发明人： Liji Huang , Chih-Chang Chen , Yahong Yao , Gaofeng Wang
IPC分类号： G01F1/78 , B05D1/00
CPC分类号： G01F1/6845 , G01F1/6888 , G01F15/006
摘要： The current invention generally relates to Micro Electro Mechanical Systems (MEMS) thermal mass flow sensors for measuring the flow rate of a flowing fluid (gas/liquid) and the methods of manufacturing on single crystal silicon wafers. The said mass flow sensors have self-cleaning capability that is achieved via the modulation of the cavity of which the sensing elements locate on the top of the cavity that is made of a silicon nitride film; alternatively the sensing elements are fabricated on top of a binary silicon nitride/conductive polycrystalline silicon film under which is a porous silicon layer selective formed in a silicon substrate. Using polycrystalline silicon or the sensing elements as electrodes, an acoustic wave can be generated across the porous silicon layer which is also used for the thermal isolation of the sensing elements. The vibration or acoustic energy is effective to remove foreign materials deposited on top surface of the sensing elements that ensure the accuracy and enhance repeatability of the thermal mass flow sensing.
摘要翻译：本发明通常涉及用于测量流动流体（气体/液体）的流量的微机电系统（MEMS）热质量流量传感器以及在单晶硅晶片上的制造方法。所述质量流量传感器具有自清洁能力，其通过其感测元件位于由氮化硅膜制成的空腔顶部上的空腔的调制而实现; 或者，感测元件制造在二元氮化硅/导电多晶硅膜的顶部，在二元氮化硅/导电多晶硅膜的下方是选择性地形成在硅衬底中的多孔硅层。使用多晶硅或感测元件作为电极，可以跨多孔硅层产生声波，其也用于感测元件的热隔离。振动或声能有效地去除沉积在感测元件的顶表面上的异物，以确保精确度并增强热质量流量感测的重复性。

4. 发明申请

US20080271525A1 Micromachined mass flow sensor and methods of making the same 有权
标题翻译：微加工质量流量传感器及其制造方法
公开(公告)号：US20080271525A1
公开(公告)日：2008-11-06
申请号：US11985879
申请日：2008-04-03
申请人： Gaofeng Wang , Chih-Chang Chen , Yahong Yao , Liji Huang
发明人： Gaofeng Wang , Chih-Chang Chen , Yahong Yao , Liji Huang
IPC分类号： G01F1/69
CPC分类号： G03H1/0891 , G03H1/0244 , G03H1/08 , G03H2001/0858 , G03H2210/30 , G03H2210/454 , G03H2223/12 , G03H2240/13 , G03H2240/23
摘要： A mass flow sensor is manufactured by a process of carrying out a micro-machining process on an N or lightly doped P-type silicon substrate with orientation . This mass flow sensor comprises a central thin-film heater and a pair of thin-film heat sensing elements, and a thermally isolated membrane for supporting the heater and the sensors out of contact with the substrate base. The mass flow sensor is arranged for integration on a same silicon substrate to form a one-dimensional or two-dimensional array in order to expand the dynamic measurement range. For each sensor, the thermally isolated membrane is formed by a process that includes a step of first depositing dielectric thin-film layers over the substrate and then performing a backside etching process on a bulk silicon with TMAH or KOH or carrying out a dry plasma etch until the bottom dielectric thin-film layer is exposed. Before backside etching the bulk silicon, rectangular openings are formed on the dielectric thin-film layers by applying a plasma etching to separate the area of heater and sensing elements from the rest of the membrane.
摘要翻译：通过在取向<100>的N或轻掺杂P型硅衬底上进行微加工工艺的方法制造质量流量传感器。该质量流量传感器包括中央薄膜加热器和一对薄膜热敏元件，以及用于支撑加热器的热隔离膜和与基板基板接触的传感器。质量流量传感器布置成集成在相同的硅衬底上以形成一维或二维阵列，以便扩大动态测量范围。对于每个传感器，热隔离膜通过包括首先在衬底上沉积电介质薄膜层然后用TMAH或KOH对体硅进行背面蚀刻工艺或进行干等离子体蚀刻的步骤来形成直到底部介电薄膜层暴露。在背面蚀刻体硅之前，通过施加等离子体蚀刻在电介质薄膜层上形成矩形开口，以将加热器的区域和感测元件与膜的其余部分分开。

5. 发明授权

US07908096B2 Integrated micromachined thermal mass flow sensor and methods of making the same 有权
标题翻译：集成微加工热质量流量传感器及其制造方法
公开(公告)号：US07908096B2
公开(公告)日：2011-03-15
申请号：US11864804
申请日：2007-09-28
申请人： Gaofeng Wang , Chih-Chang Chen , Yahong Yao , Liji Huang
发明人： Gaofeng Wang , Chih-Chang Chen , Yahong Yao , Liji Huang
IPC分类号： G01F1/00
CPC分类号： G01F1/6845 , G01F1/692 , G01F1/6965 , G01F1/698
摘要： An integrated mass flow sensor is manufactured by a process of carrying out a micro-machining process on an N or P-type silicon substrate with orientation . This mass flow sensor comprises an upstream thin-film heater, an downstream thin-film heater, and a pair of thin-film heat sensing elements, and a thermally isolated membrane for supporting the heaters and the sensors out of contact with the substrate base. This mass flow sensor is operated with three sets of circuits, a first circuit for measuring a flow rate in a first range of flow rates, a second circuit for measuring a flow rate in a second range of flow rates, and a third circuit in a differential configuration for measuring a flow rate in said first range of flow rates or said second range of flow rates, to significantly increase range of flow rate measurements and provide an optional for concentration measurement, while maintains a high degree of measurement accuracy.
摘要翻译：通过在取向<100>的N型或P型硅衬底上进行微加工工艺的方法制造集成的质量流量传感器。该质量流量传感器包括上游薄膜加热器，下游薄膜加热器和一对薄膜热敏元件，以及用于支撑加热器和传感器的热隔离膜与基底不接触。该质量流量传感器用三组电路操作，第一电路用于测量第一流量范围内的流量，第二电路用于测量在第二流量范围内的流量，以及第三电路用于测量所述第一流量范围或所述第二流量范围内的流量的差分配置，以显着增加流量测量的范围，并提供可选的浓度测量，同时保持高度的测量精度。

6. 发明授权

US07878056B2 Micromachined thermal mass flow sensor with self-cleaning capability and methods of making the same 有权
标题翻译：具有自清洁能力的微加工热质量流量传感器及其制造方法
公开(公告)号：US07878056B2
公开(公告)日：2011-02-01
申请号：US11960261
申请日：2007-12-19
申请人： Liji Huang , Chih-Chang Chen , Yahong Yao , Gaofeng Wang
发明人： Liji Huang , Chih-Chang Chen , Yahong Yao , Gaofeng Wang
IPC分类号： G01F1/68
CPC分类号： G01F1/6845 , G01F1/6888 , G01F15/006
摘要： The current invention generally relates to Micro Electro Mechanical Systems (MEMS) thermal mass flow sensors for measuring the flow rate of a flowing fluid (gas/liquid) and the methods of manufacturing on single crystal silicon wafers. The said mass flow sensors have self-cleaning capability that is achieved via the modulation of the cavity of which the sensing elements locate on the top of the cavity that is made of a silicon nitride film; alternatively the sensing elements are fabricated on top of a binary silicon nitride/conductive polycrystalline silicon film under which is a porous silicon layer selective formed in a silicon substrate. Using polycrystalline silicon or the sensing elements as electrodes, an acoustic wave can be generated across the porous silicon layer which is also used for the thermal isolation of the sensing elements. The vibration or acoustic energy is effective to remove foreign materials deposited on top surface of the sensing elements that ensure the accuracy and enhance repeatability of the thermal mass flow sensing.
摘要翻译：本发明通常涉及用于测量流动流体（气体/液体）的流量的微机电系统（MEMS）热质量流量传感器以及在单晶硅晶片上的制造方法。所述质量流量传感器具有自清洁能力，其通过其感测元件位于由氮化硅膜制成的空腔顶部上的空腔的调制而实现; 或者，感测元件制造在二元氮化硅/导电多晶硅膜的顶部，在二元氮化硅/导电多晶硅膜的下方是选择性地形成在硅衬底中的多孔硅层。使用多晶硅或感测元件作为电极，可以跨多孔硅层产生声波，其也用于感测元件的热隔离。振动或声能有效地去除沉积在感测元件的顶表面上的异物，以确保精确度并增强热质量流量感测的重复性。

7. 发明申请

US20090164163A1 INTEGRATED MICROMACHINED THERMAL MASS FLOW SENSOR AND METHODS OF MAKING THE SAME 有权
标题翻译：一体化微孔热流量传感器及其制造方法
公开(公告)号：US20090164163A1
公开(公告)日：2009-06-25
申请号：US11864804
申请日：2007-09-28
申请人： Gaofeng Wang , Chih-Chang Chen , Yahong Yao , Liji Huang
发明人： Gaofeng Wang , Chih-Chang Chen , Yahong Yao , Liji Huang
IPC分类号： G01F25/00 , G01F1/69
CPC分类号： G01F1/6845 , G01F1/692 , G01F1/6965 , G01F1/698
摘要： An integrated mass flow sensor is manufactured by a process of carrying out a micro-machining process on an N or P-type silicon substrate with orientation . This mass flow sensor comprises an upstream thin-film heater, an downstream thin-film heater, and a pair of thin-film heat sensing elements, and a thermally isolated membrane for supporting the heaters and the sensors out of contact with the substrate base. This mass flow sensor is operated with three sets of circuits, a first circuit for measuring a flow rate in a first range of flow rates, a second circuit for measuring a flow rate in a second range of flow rates, and a third circuit in a differential configuration for measuring a flow rate in said first range of flow rates or said second range of flow rates, to significantly increase range of flow rate measurements and provide an optional for concentration measurement, while maintains a high degree of measurement accuracy.
摘要翻译：通过在取向<100>的N型或P型硅衬底上进行微加工工艺的方法制造集成的质量流量传感器。该质量流量传感器包括上游薄膜加热器，下游薄膜加热器和一对薄膜热敏元件，以及用于支撑加热器和传感器的热隔离膜与基底不接触。该质量流量传感器用三组电路操作，第一电路用于测量第一流量范围内的流量，第二电路用于测量在第二流量范围内的流量，以及第三电路用于测量所述第一流量范围或所述第二流量范围内的流量的差分配置，以显着增加流量测量的范围，并提供可选的浓度测量，同时保持高度的测量精度。

8. 发明申请

US20090016403A1 MICROMACHINED GAS AND LIQUID CONCENTRATION SENSOR AND METHOD OF MAKING THE SAME 有权
标题翻译：微孔气体和液体浓度传感器及其制造方法
公开(公告)号：US20090016403A1
公开(公告)日：2009-01-15
申请号：US11774771
申请日：2007-07-09
申请人： Chih-Chang Chen , Yahong Yao , Gaofeng Wang , Liji Huang
发明人： Chih-Chang Chen , Yahong Yao , Gaofeng Wang , Liji Huang
IPC分类号： G01N25/00 , G01F1/68
CPC分类号： G01N25/20 , G01F1/6845 , G01F1/692
摘要： A device with micromachined (a.k.a. MEMS, Micro Electro Mechanical Systems) silicon sensor to measure gas or liquid concentration in a binary mixture formality is disclosed in the present invention. A process for fabricating the said MEMS silicon concentration sensor, which thereby can greatly reduce the sensor fabrication cost by a batch production, is revealed as well. This MEMS process can mass-produce the sensors on silicon substrate in the ways of small size, low power, and high reliability. In addition to the gas or liquid concentration measurement, the present invention further discloses that the said sensor can also readily measure gas or liquid mass flow rate while record the concentration data, which is not viable by other related working principle.
摘要翻译：在本发明中公开了一种具有微加工（a.k.a. MEMS，Micro Electro Mechanical Systems）硅传感器的装置，用于测量二元混合物形式中的气体或液体浓度。也可以揭示制造所述MEMS硅浓度传感器的方法，从而能够通过批量生产大大降低传感器制造成本。该MEMS工艺可以以小尺寸，低功率和高可靠性的方式批量生产硅衬底上的传感器。除了气体或液体浓度测量之外，本发明还公开了所述传感器还可以容易地测量气体或液体质量流量，同时记录其他相关工作原理不可行的浓度数据。

9. 发明授权

US06724516B2 Robust multi-layered thin-film membrane for micro-electromechanical systems (MEMS) photonic devices 失效
标题翻译：用于微机电系统（MEMS）光子器件的稳健的多层薄膜膜
公开(公告)号：US06724516B2
公开(公告)日：2004-04-20
申请号：US10062774
申请日：2002-02-01
申请人： Gaofeng Wang , Naiqian Han , Liji Huang
发明人： Gaofeng Wang , Naiqian Han , Liji Huang
IPC分类号： G02B2600
CPC分类号： G02B26/0833 , G02B6/122 , G02B26/001 , G02B2006/12104
摘要： This invention discloses a configuration of thin-film membrane. This thin-film membrane is freestanding, movable, and made of multiple layers of different materials such as silicon nitride, polycrystalline silicon or the combination of these two. This thin-film membrane can be actuated by external controlling forces such as electrostatic force. This thin-film membrane consists of odd number of layers, e.g., 1 layer, 3 layers, 5 layers, . . . , etc. Moreover, the layer profile of this membrane is symmetric, e.g., the bottommost layer is made to be identical to the topmost layer, the next bottommost layer is made to be identical to the next topmost layer, so on and so forth.
摘要翻译：本发明公开了薄膜的结构。该薄膜是独立的，可移动的，并且由多层不同的材料制成，例如氮化硅，多晶硅或这两者的组合。该薄膜可以通过诸如静电力的外部控制力来致动。该薄膜膜由奇数层组成，例如1层，3层，5层。。。此外，该膜的层轮廓是对称的，例如，最底层与最顶层相同，下一个最下层被制成与下一个最上层相同，等等。

10. 发明授权

US06620712B2 Defined sacrifical region via ion implantation for micro-opto-electro-mechanical system (MOEMS) applications 失效
标题翻译：通过离子注入为微光电机械系统（MOEMS）应用定义了牺牲区域
公开(公告)号：US06620712B2
公开(公告)日：2003-09-16
申请号：US10011350
申请日：2001-11-12
申请人： Liji Huang , Naiqian Han , Yahong Yao , Gaofeng Wang
发明人： Liji Huang , Naiqian Han , Yahong Yao , Gaofeng Wang
IPC分类号： H01L2100
CPC分类号： B81C1/00047 , B81B2201/047 , B81B2203/0127 , B81B2203/0315 , B81C1/00571 , B81C2201/0109 , B81C2201/0136
摘要： The present invention discloses an electro-optical device support on a substrate. The electro-optical device includes a sacrificial layer disposed on the substrate having a chamber-wall region surrounding and defining an optical chamber. The electro-optical device further includes a membrane layer disposed on top of the sacrificial layer having a chamber-removal opening surrounding and defining an electric tunable membrane for transmitting an optical signal therethrough. The electrically tunable membrane disposed on top of the optical chamber surrounded by the chamber wall regions. The chamber-wall region is doped with ion-dopants for maintaining the chamber-wall region for removal-resistance under a chamber-forming process performed through the chamber-removal opening. In a preferred embodiment, the chamber-wall region is a doped silicon dioxide region with carbon or nitrogen. In another preferred embodiment, the chamber-wall region is a nitrogen ion-doped SiNxOy region. In another preferred embodiment, the optical chamber is an etched chamber formed by etching through the chamber removal opening for etching off an etch-enhanced region surrounded by an etch-resistant region constituting the chamber wall.
摘要翻译：本发明公开了一种在基片上的电光装置支架。电光装置包括设置在基板上的牺牲层，其具有围绕并限定光学室的室壁区域。电光装置还包括设置在牺牲层顶部的膜层，其具有围绕并限定用于透射光信号的电可调膜的室去除开口。设置在由室壁区域围绕的光学室的顶部上的电可调膜。室壁区域掺杂有离子掺杂剂，用于在通过室去除开口进行的室形成过程中维持室壁区域以用于去除电阻。在优选实施例中，室壁区域是具有碳或氮的掺杂二氧化硅区域。在另一个优选的实施方案中，室壁区域是氮离子掺杂的SiN x O y区域。在另一个优选实施例中，光学室是通过蚀刻通过室去除开口形成的蚀刻室，用于蚀刻由构成室壁的耐蚀刻区域围绕的蚀刻增强区域。

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