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1. 发明申请

US20120037191A1 CLEANING SEQUENCE FOR OXIDE QUALITY MONITORING SHORT-LOOP SEMICONDUCTOR WAFER 审中-公开
标题翻译：氧化物质量监测短周期半导体波形清洁序列
公开(公告)号：US20120037191A1
公开(公告)日：2012-02-16
申请号：US12857104
申请日：2010-08-16
申请人： Liang Chun Sung , Jhong Zhong Chen , Kai Yao Chang , Yuan Pu Liao , Chia Jung Yang , Wei Ming Chen
发明人： Liang Chun Sung , Jhong Zhong Chen , Kai Yao Chang , Yuan Pu Liao , Chia Jung Yang , Wei Ming Chen
IPC分类号： B08B3/00
CPC分类号： H01L21/0206
摘要： Disclosed herein are methods for novel cleaning processes for inline quality monitoring short-loop semiconductor wafers. In one embodiment, an exemplary process may comprise immersing the short-loop wafer in an SC-2 aqueous solution comprising hydrochloric acid and hydrogen peroxide at a temperature of about 60° C., and for a time period of about 600 seconds, and then rinsing the wafer with deionized water to remove residual SC-2 solution immediately following immersing the wafer in the SC-2 solution. This exemplary method may then comprise immersing the short-loop wafer in an SC-1 aqueous solution comprising ammonia and hydrogen peroxide immediately after rinsing the wafer to remove residual SC-2 solution, and then rinsing the wafer with deionized water to remove residual SC-1 solution immediately following immersing the wafer in the SC-1 solution. In such a method, however, the wafer is immersed in an HF aqueous solution comprising hydrofluoric acid immediately prior to immersing the wafer in the SC-2 solution, or immediately after immersing the wafer in the SC-1 solution.
摘要翻译：本文公开了用于在线质量监测短循环半导体晶片的新型清洁方法的方法。在一个实施方案中，示例性方法可以包括将短环晶片浸入包含盐酸和过氧化氢的SC-2水溶液中，温度约为60℃，时间约为600秒，然后在将晶片浸入SC-2溶液后立即用去离子水冲洗晶片以去除残留的SC-2溶液。该示例性方法可以包括在冲洗晶片之后立即将短环晶片浸入包含氨和过氧化氢的SC-1水溶液中以除去残留的SC-2溶液，然后用去离子水冲洗晶片以除去残留的SC- 在将晶片浸入SC-1溶液后立即进行。然而，在这种方法中，在将晶片浸入SC-2溶液之前或将晶片浸入SC-1溶液之后，立即将晶片浸入包含氢氟酸的HF水溶液中。

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