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    • 1. 发明授权
    • Balanced accuracy for extraction
    • 平衡精度提取
    • US06854099B2
    • 2005-02-08
    • US10064300
    • 2002-07-01
    • Lewis W. Dewey, IIIPeter A. HabitzThomas G. Mitchell
    • Lewis W. Dewey, IIIPeter A. HabitzThomas G. Mitchell
    • G06F17/50
    • G06F17/5036
    • A method and system for performing parasitic extraction, wherein the method comprises calculating the minimum output impedance for a network-connected component comprising a plurality of ports thereby producing a labeled impedance, estimating the minimum output impedance for every net, comparing the labeled impedance with the estimated impedance, and selecting the net which needs to be extracted based on a ratio of values of the labeled impedance and the estimated impedance. The step of calculating comprises labeling every port with a minimum size of port impedance, a resistance from a port to power, and a minimum capacitance of a port-net inside the network connected component. The step of estimating comprises using a geometry of segments of the net comprising a summation of area and perimeter values of all the segments of the net, or calculating a resistance over a length of a total net versus an average width of the net.
    • 一种用于执行寄生提取的方法和系统,其中所述方法包括计算包括多个端口的网络连接部件的最小输出阻抗,从而产生标记阻抗,估计每个网络的最小输出阻抗,将标记阻抗与 估计阻抗,以及基于标记阻抗值和估计阻抗的比值来选择需要提取的网络。 计算步骤包括以端口阻抗的最小尺寸,从端口到电源的电阻以及网络连接组件内的端口网的最小电容来标记每个端口。 估计步骤包括使用网的几何形状,其包括网的所有段的面积和周界值的总和,或者计算总网长度相对于网的平均宽度的电阻。
    • 2. 发明授权
    • Decoupled capacitance calculator for orthogonal wiring patterns
    • 用于正交布线图案的去耦电容计算器
    • US06574782B1
    • 2003-06-03
    • US09713422
    • 2000-11-15
    • L. William Dewey, IIIPeter A. HabitzThomas G. Mitchell
    • L. William Dewey, IIIPeter A. HabitzThomas G. Mitchell
    • G06F1750
    • G06F17/5036
    • A structure and method for extracting parasitic capacitance from a multi-layer wiring structure that creates, for each wiring layer in a wiring structure, a wiring density map and measures a plurality of metal segments in a wiring layer to determine an area occupied by the metal segments. The invention calculates an up area capacitance component for each of the metal segments by multiplying the area occupied by the metal segments by a wiring density from the wiring density map of an overlying wiring layer over the metal segments and by a capacitance coefficient of the overlying wiring layer. To calculate the down area capacitance component for each of the metal segments, the invention multiplies the area occupied by the metal segments by a wiring density, from the wiring density map of an underlying wiring layer under the metal segments and by a capacitance coefficient of the underlying wiring layer. The invention combines the up area capacitance component and the down area capacitance component to form a vertical coupling capacitance component for each of the metal segments.
    • 一种用于从多层布线结构中提取寄生电容的结构和方法,其对布线结构中的每个布线层产生布线密度图,并测量布线层中的多个金属片段,以确定金属占据的面积 细分。 本发明通过将金属片段占据的面积乘以金属片上覆盖布线层的布线密度图和布线密度乘以覆盖布线的电容系数来计算每个金属片段的面积电容分量 层。 为了计算每个金属段的下降面积电容分量,本发明根据金属段下面的布线层的布线密度图和金属段的电容系数将金属段所占的面积乘以布线密度 底层布线层。 本发明结合了上部区域电容分量和向下区域电容分量,以形成每个金属段的垂直耦合电容分量。
    • 9. 发明授权
    • Parallel array architecture for constant current electro-migration stress testing
    • 用于恒流电迁移应力测试的并行阵列架构
    • US08217671B2
    • 2012-07-10
    • US12492619
    • 2009-06-26
    • Kanak B. AgarwalPeter A. HabitzJerry D. HayesYing LiuDeborah M. MasseyAlvin W. Strong
    • Kanak B. AgarwalPeter A. HabitzJerry D. HayesYing LiuDeborah M. MasseyAlvin W. Strong
    • G01R31/00
    • G01R31/2858
    • A parallel array architecture for constant current electro-migration stress testing is provided. The parallel array architecture comprises a device under test (DUT) array having a plurality of DUTs coupled in parallel and a plurality of localized heating elements associated with respective ones of the DUTs in the DUT array. The architecture further comprises DUT selection logic that isolates individual DUTs within the array. Moreover, the architecture comprises current source logic that provides a reference current and controls the current through the DUTs in the DUT array such that each DUT in the DUT array has substantially a same current density, and current source enable logic for selectively enabling portions for the current source logic. Electro-migration stress testing is performed on the DUTs of the DUT array using the heating elements, the DUT selection logic, current source logic, and current source enable logic.
    • 提供了一种用于恒流电迁移应力测试的并行阵列架构。 并行阵列结构包括被测器件(DUT)阵列,其具有并联耦合的多个DUT和与DUT阵列中相应的DUT相关联的多个局部加热元件。 该架构还包括DUT阵列中的各个DUT隔离的DUT选择逻辑。 此外,该架构包括提供参考电流并且控制通过DUT阵列中的DUT的电流的电流源逻辑,使得DUT阵列中的每个DUT具有基本上相同的电流密度,以及电流源使能逻辑,用于选择性地使能部分 电流源逻辑。 使用加热元件,DUT选择逻辑,电流源逻辑和电流源使能逻辑在DUT阵列的DUT上执行电迁移应力测试。