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    • 1. 发明授权
    • Liquid metal micro switches using as channels and heater cavities matching patterned thick film dielectric layers on opposing thin ceramic plates
    • 液态金属微动开关,用作通道和加热器腔体,在相对的薄陶瓷板上匹配图案化的厚膜电介质层
    • US06777630B1
    • 2004-08-17
    • US10426449
    • 2003-04-30
    • Lewis R DovePaul Thomas CarsonJohn F CaseyMarvin Glenn Wong
    • Lewis R DovePaul Thomas CarsonJohn F CaseyMarvin Glenn Wong
    • H01H2900
    • H01H1/0036H01H29/28H01H2029/008H01H2061/006
    • An efficient way to fabricate the channels and cavities in a LIMMS device is to form them as matching upper and lower portions each created as a patterned layer of thick film dielectric material deposited on a respective upper or lower substrate. The two portions are adhered together by a patterned layer of adhesive, and hermetically sealed around an outer perimeter. The heater resistors are mounted atop the lower layer, thus suspending them away from that substrate and exposing more of their surface area. Vias can be used to route the conductors for the heaters and the switched signal contacts through the lower substrate to cooperate with surface mount techniques using solder balls on an array of contact pads. These vias can be made hermetic by their placement within the patterned layers of dielectric material and by covering their exposed ends with pads of hermetic metal. Suitable thick film dielectric materials that may be deposited as a paste and subsequently cured include the KQ 150 and KQ 115 thick film dielectrics from Heracus and the 4141A/D thick film compositions from DuPont.
    • 在LIMMS装置中制造通道和空腔的有效方法是将它们形成为匹配上部和下部,每个上部和下部被形成为沉积在相应的上部或下部基底上的厚膜介电材料的图案化层。 两个部分通过图案化的粘合剂层粘合在一起,并围绕外周密封。 加热电阻器安装在下层的顶部,从而将它们悬挂在远离基板并暴露出更多的表面积。 通孔可用于将加热器的导体和切换的信号触点通过下基板布线,以使用在接触焊盘阵列上的焊球的表面贴装技术配合。 这些通孔可以通过它们放置在图案化的电介质材料层内并通过用气密金属垫覆盖其暴露的末端而形成为气密的。 可以作为糊料沉积并随后固化的合适的厚膜电介质材料包括来自Heraeus的KQ 150和KQ 115厚膜电介质和来自DuPont的4141A / D厚膜组合物。
    • 5. 发明授权
    • Shielded attachment of coaxial RF connector to thick film integrally shielded transmission line on a substrate
    • 将同轴射频连接器屏蔽连接到厚膜上,整体屏蔽了基片上的传输线
    • US06457979B1
    • 2002-10-01
    • US10016285
    • 2001-10-29
    • Lewis R DoveMarvin G WongJohn F CaseyWesley C Whiteley
    • Lewis R DoveMarvin G WongJohn F CaseyWesley C Whiteley
    • H01R1200
    • H01R9/0515H01R4/04H05K1/0219H05K1/117
    • A solution to the problem of connecting a merchant straight through coaxial RF connector to an quasi-coaxial transmission line formed on the substrate of a hybrid is to, if necessary, gradually increase the height of the center conductor of the quasi-coaxial transmission line by increasing the thickness of underlying deposited dielectric until the center conductor of the transmission line matches the position of the center conductor of the connector, which two may then be joined with solder or conductive adhesive. One style of coaxial RF connector of interest has four prongs disposed in a rectangle around the center conductor on the permanent and non-threaded side. Two of the prongs define a long side of a rectangle and may be soldered or otherwise attached to the substrate with conductive adhesive, and the two prongs that define the long side closest to the center conductor can support a small cover that physically bridges and electrically shields the gap between the connector and the end of the quasi-coaxial transmission line. The cover provides complete shielding and assists in minimizing the discontinuity in characteristic impedance caused by the transition between the connector and the quasi-coaxial transmission line.
    • 通过同轴RF连接器将商人连接到形成在混合物的基板上的准同轴传输线的问题的解决方案是,如果需要,通过以下方式逐渐增加准同轴传输线的中心导体的高度 增加底层沉积电介质的厚度,直到传输线的中心导体与连接器的中心导体的位置相匹配,然后将两个导体与焊料或导电粘合剂相连接。 感兴趣的同轴RF连接器的一种类型的四个插脚设置在永久和非螺纹侧上的中心导体周围的矩形中。 两个尖头限定长方形的长边,并且可以用导电粘合剂焊接或以其他方式附接到基板,并且限定最接近中心导体的长边的两个插脚可以支撑物理桥接和电屏蔽的小盖子 连接器与准同轴传输线端部之间的间隙。 该盖提供完整的屏蔽,有助于最小化由连接器和准同轴传输线之间的过渡引起的特性阻抗的不连续性。
    • 9. 发明授权
    • High frequency attenuator using liquid metal micro switches
    • 高频衰减器采用液态金属微动开关
    • US06646527B1
    • 2003-11-11
    • US10136147
    • 2002-04-30
    • Lewis R DoveJohn R LindseyDavid J Dascher
    • Lewis R DoveJohn R LindseyDavid J Dascher
    • H01H2900
    • H01P1/22H01H1/0036H01H29/28H01H2029/008
    • Resonance within an attenuator relay caused by stray coupling capacitances to, and stray reactance within the switched conductor that replaces the attenuator section, is mitigated by reducing the stray coupling capacitances to as low a value as possible, and by using a conductor that is a section of controlled impedance transmission line that matches the system into which the attenuator relay has been placed. A substrate having SPDT LIMMS switches on either side of a switched transmission line segment and its associated attenuator, all of which are fabricated on the substrate, will have significantly lower stray coupling capacitance across the open parts of the switches when the attenuator segment is in use. This will increase the frequency for the onset of the resonance driven by the RF voltage drop across the attenuator. A reduction in the amplitude of the resonance can be obtained by including on the substrate an additional pair of LIMMS damping switches at each end of the transmission line segment. These damping switches each connect a terminating resistor to the ends of the transmission line segment when the attenuator section is in use. This loads the resonator and reduces the amplitude of the resonance. Still further improvement can be obtained by locating one of the damping switches and its termination resistor near (but preferably not exactly at) the middle of the transmission line segment.
    • 由杂散耦合电容引起的衰减器继电器中的谐振和取代衰减器部分的开关导体内的杂散电抗可以通过将杂散耦合电容减小到尽可能低的值,并通过使用导体 与控制阻抗传输线匹配的衰减器继电器已经放置在其中的系统。 在使用衰减器段时,具有SPDT LIMMS的开关的开关部分上的开关传输线段及其相关联的衰减器的基板上的所有这些都被制造在基板上将具有明显较低的开关部分的杂散耦合电容 。 这将增加由衰减器上的RF电压降驱动的谐振开始的频率。 可以通过在基板上在传输线段的每一端包括另外的一对LIMMS阻尼开关来获得谐振振幅的减小。 当衰减器部分使用时,这些阻尼开关各自将终端电阻器连接到传输线段的端部。 这样会加载谐振器并降低谐振的幅度。 通过将阻尼开关及其终端电阻之一定位在传输线路段的中间附近(但优选地不在精确地)处,可以获得进一步的改进。