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1. 发明授权

US08513127B2 Chemical mechanical planarization processes for fabrication of FinFET devices 有权
标题翻译：用于制造FinFET器件的化学机械平面化工艺
公开(公告)号：US08513127B2
公开(公告)日：2013-08-20
申请号：US13012836
申请日：2011-01-25
申请人： Josephine B. Chang , Leslie Charns , Jason E. Cummings , Michael A. Guillorn , Lukasz J. Hupka , Dinesh R. Koli , Tomohisa Konno , Mahadevaiyer Krishnan , Michael F. Lofaro , Jakub W. Nalaskowski , Masahiro Noda , Dinesh K. Penigalapati , Tatsuya Yamanaka
发明人： Josephine B. Chang , Leslie Charns , Jason E. Cummings , Michael A. Guillorn , Lukasz J. Hupka , Dinesh R. Koli , Tomohisa Konno , Mahadevaiyer Krishnan , Michael F. Lofaro , Jakub W. Nalaskowski , Masahiro Noda , Dinesh K. Penigalapati , Tatsuya Yamanaka
IPC分类号： H01L21/302
CPC分类号： H01L21/31053 , H01L29/517 , H01L29/6653 , H01L29/66545
摘要： A planarization method includes planarizing a semiconductor wafer in a first chemical mechanical polish step to remove overburden and planarize a top layer leaving a thickness of top layer material over underlying layers. The top layer material is planarized in a second chemical mechanical polish step to further remove the top layer and expose underlying layers of a second material and a third material such that a selectivity of the top layer material to the second material to the third material is between about 1:1:1 to about 2:1:1 to provide a planar topography.
摘要翻译：平面化方法包括在第一化学机械抛光步骤中平坦化半导体晶片以去除覆盖层并平坦化顶层，从而在顶层之上留下厚度的顶层材料。顶层材料在第二化学机械抛光步骤中被平坦化，以进一步去除顶层并暴露第二材料和第三材料的下层，使得顶层材料对第二材料对第三材料的选择性在约1：1至约2：1：1，以提供平面形貌。

2. 发明申请

US20120083121A1 Fabrication of Replacement Metal Gate Devices 有权
标题翻译：替代金属门装置的制造
公开(公告)号：US20120083121A1
公开(公告)日：2012-04-05
申请号：US13012879
申请日：2011-01-25
申请人： Takashi Ando , Leslie Charns , Jason E. Cummings , Lukasz J. Hupka , Dinesh R. Koli , Tomohisa Konno , Mahadevaiyer Krishnan , Michael F. Lofaro , Jakub W. Nalaskowski , Masahiro Noda , Dinesh K. Penigalapati , Tatsuya Yamanaka
发明人： Takashi Ando , Leslie Charns , Jason E. Cummings , Lukasz J. Hupka , Dinesh R. Koli , Tomohisa Konno , Mahadevaiyer Krishnan , Michael F. Lofaro , Jakub W. Nalaskowski , Masahiro Noda , Dinesh K. Penigalapati , Tatsuya Yamanaka
IPC分类号： H01L21/463
CPC分类号： H01L21/31053 , H01L29/517 , H01L29/6653 , H01L29/66545
摘要： Methods for polishing multiple dielectric layers to form replacement metal gate structures include a first chemical mechanical polish step to remove overburden and planarize a top layer to leave a planarized thickness over a gate structure. A second chemical mechanical polish step includes removal of the thickness to expose an underlying covered surface of a dielectric of the gate structure with a slurry configured to polish the top layer and the underlying covered surface substantially equally to accomplish a planar topography. A third chemical mechanical polish step is employed to remove the dielectric of the gate structure and expose a gate conductor.
摘要翻译：用于抛光多个电介质层以形成替换金属栅极结构的方法包括第一化学机械抛光步骤，以去除覆盖层并平坦化顶层以在栅极结构上留下平坦化的厚度。第二化学机械抛光步骤包括去除厚度以暴露栅极结构的电介质的下面覆盖的表面，其中浆料被配置成基本上等同地抛光顶层和下面的被覆表面以实现平面形貌。采用第三种化学机械抛光步骤来去除栅极结构的电介质并露出栅极导体。

3. 发明授权

US08524606B2 Chemical mechanical planarization with overburden mask 有权
标题翻译：化学机械平面化与上覆层掩模
公开(公告)号：US08524606B2
公开(公告)日：2013-09-03
申请号：US13012821
申请日：2011-01-25
申请人： Leslie Charns , John M. Cotte , Jason E. Cummings , Lukasz J. Hupka , Dinesh R. Koli , Tomohisa Konno , Mahadevaiyer Krishnan , Michael F. Lofaro , Jakub W. Nalaskowski , Masahiro Noda , Dinesh K. Penigalapati , Tatsuya Yamanaka
发明人： Leslie Charns , John M. Cotte , Jason E. Cummings , Lukasz J. Hupka , Dinesh R. Koli , Tomohisa Konno , Mahadevaiyer Krishnan , Michael F. Lofaro , Jakub W. Nalaskowski , Masahiro Noda , Dinesh K. Penigalapati , Tatsuya Yamanaka
IPC分类号： H01L21/311
CPC分类号： H01L21/31053 , H01L29/517 , H01L29/6653 , H01L29/66545
摘要： Planarization methods include depositing a mask material on top of an overburden layer on a semiconductor wafer. The mask material is planarized to remove the mask material from up areas of the overburden layer to expose the overburden layer without removing the mask material from down areas. The exposed overburden layer is wet etched and leaves a thickness remaining over an underlying layer. Remaining portions of the mask layer and the exposed portions of the overburden layer are planarized to expose the underlying layer.
摘要翻译：平面化方法包括在半导体晶片上的覆盖层顶部沉积掩模材料。将掩模材料平坦化以从覆盖层的上部区域去除掩模材料，以暴露覆盖层，而不从掩模材料向下区域移除。暴露的覆盖层被湿蚀刻并留下厚度保留在下层上。掩模层的剩余部分和覆盖层的暴露部分被平坦化以暴露下面的层。

4. 发明授权

US08507383B2 Fabrication of replacement metal gate devices 有权
标题翻译：替代金属栅极器件的制造
公开(公告)号：US08507383B2
公开(公告)日：2013-08-13
申请号：US13012879
申请日：2011-01-25
申请人： Takashi Ando , Leslie Charns , Jason E. Cummings , Lukasz J. Hupka , Dinesh R. Koli , Tomohisa Konno , Mahadevaiyer Krishnan , Michael F. Lofaro , Jakub W. Nalaskowski , Masahiro Noda , Dinesh K. Penigalapati , Tatsuya Yamanaka
发明人： Takashi Ando , Leslie Charns , Jason E. Cummings , Lukasz J. Hupka , Dinesh R. Koli , Tomohisa Konno , Mahadevaiyer Krishnan , Michael F. Lofaro , Jakub W. Nalaskowski , Masahiro Noda , Dinesh K. Penigalapati , Tatsuya Yamanaka
IPC分类号： H01L21/302 , C03C15/00 , C23F1/00
CPC分类号： H01L21/31053 , H01L29/517 , H01L29/6653 , H01L29/66545
摘要： Methods for polishing multiple dielectric layers to form replacement metal gate structures include a first chemical mechanical polish step to remove overburden and planarize a top layer to leave a planarized thickness over a gate structure. A second chemical mechanical polish step includes removal of the thickness to expose an underlying covered surface of a dielectric of the gate structure with a slurry configured to polish the top layer and the underlying covered surface substantially equally to accomplish a planar topography. A third chemical mechanical polish step is employed to remove the dielectric of the gate structure and expose a gate conductor.
摘要翻译：用于抛光多个电介质层以形成替换金属栅极结构的方法包括第一化学机械抛光步骤，以去除覆盖层并平坦化顶层以在栅极结构上留下平坦化的厚度。第二化学机械抛光步骤包括去除厚度以暴露栅极结构的电介质的下面覆盖的表面，其中浆料被配置成基本上等同地抛光顶层和下面的被覆表面以实现平面形貌。采用第三种化学机械抛光步骤来去除栅极结构的电介质并露出栅极导体。

5. 发明授权

US08497210B2 Shallow trench isolation chemical mechanical planarization 有权
标题翻译：浅沟隔离化学机械平面化
公开(公告)号：US08497210B2
公开(公告)日：2013-07-30
申请号：US13012142
申请日：2011-01-24
申请人： Leslie Charns , Jason E. Cummings , Lukasz J. Hupka , Dinesh R. Koli , Tomohisa Konno , Mahadevaiyer Krishnan , Michael F. Lofaro , Jakub W. Nalaskowski , Masahiro Noda , Dinesh K. Penigalapati , Tatsuya Yamanaka
发明人： Leslie Charns , Jason E. Cummings , Lukasz J. Hupka , Dinesh R. Koli , Tomohisa Konno , Mahadevaiyer Krishnan , Michael F. Lofaro , Jakub W. Nalaskowski , Masahiro Noda , Dinesh K. Penigalapati , Tatsuya Yamanaka
IPC分类号： H01L21/302
CPC分类号： H01L21/31053 , H01L29/517 , H01L29/6653 , H01L29/66545
摘要： A polishing method includes polishing, in a first polish, a wafer to remove overburden and planarize a top layer leaving a portion remaining on an underlying layer. A second polishing step includes two phases. In a first phase, the top layer is removed and the underlying layer is exposed, with a top layer to underlying layer selectivity of between about 1:1 to about 2:1 to provide a planar topography. In a second phase, residual portions of the top layer are removed from a top of the underlying layer to ensure complete exposure of an underlying layer surface.
摘要翻译：抛光方法包括在第一抛光剂中抛光晶片以去除覆盖层并平坦化顶层，留下保留在下层上的部分。第二抛光步骤包括两个阶段。在第一阶段中，去除顶层并暴露下层，其顶层至基层选择性为约1:1至约2:1，以提供平面形貌。在第二阶段中，顶层的残余部分从下层的顶部去除，以确保下层的表面完全曝光。

6. 发明申请

US20120083123A1 Chemical Mechanical Planarization Processes For Fabrication of FINFET Devices 有权
标题翻译：用于制造FINFET器件的化学机械平面化工艺
公开(公告)号：US20120083123A1
公开(公告)日：2012-04-05
申请号：US13012836
申请日：2011-01-25
申请人： Josephine B. Chang , Leslie Charns , Jason E. Cummings , Michael A. Guillorn , Lukasz J. Hupka , Dinesh R. Koli , Tomohisa Konno , Mahadevaiyer Krishnan , Michael F. Lofaro , Jakub W. Nalaskowski , Masahiro Noda , Dinesh K. Penigalapati , Tatsuya Yamanaka
发明人： Josephine B. Chang , Leslie Charns , Jason E. Cummings , Michael A. Guillorn , Lukasz J. Hupka , Dinesh R. Koli , Tomohisa Konno , Mahadevaiyer Krishnan , Michael F. Lofaro , Jakub W. Nalaskowski , Masahiro Noda , Dinesh K. Penigalapati , Tatsuya Yamanaka
IPC分类号： H01L21/306
CPC分类号： H01L21/31053 , H01L29/517 , H01L29/6653 , H01L29/66545
摘要： A planarization method includes planarizing a semiconductor wafer in a first chemical mechanical polish step to remove overburden and planarize a top layer leaving a thickness of top layer material over underlying layers. The top layer material is planarized in a second chemical mechanical polish step to further remove the top layer and expose underlying layers of a second material and a third material such that a selectivity of the top layer material to the second material to the third material is between about 1:1:1 to about 2:1:1 to provide a planar topography.
摘要翻译：平面化方法包括在第一化学机械抛光步骤中平坦化半导体晶片以去除覆盖层并平坦化顶层，从而在顶层之上留下厚度的顶层材料。顶层材料在第二化学机械抛光步骤中被平坦化，以进一步去除顶层并暴露第二材料和第三材料的下层，使得顶层材料对第二材料对第三材料的选择性在约1：1至约2：1：1，以提供平面形貌。

7. 发明申请

US20120083122A1 Shallow Trench Isolation Chemical Mechanical Planarization 有权
标题翻译：浅沟槽隔离化学机械平面化
公开(公告)号：US20120083122A1
公开(公告)日：2012-04-05
申请号：US13012142
申请日：2011-01-24
申请人： Leslie Charns , Jason E. Cummings , Lukasz J. Hupka , Dinesh R. Koli , Tomohisa Konno , Mahadevaiyer Krishnan , Michael F. Lofaro , Jakub W. Nalaskowski , Masahiro Noda , Dinesh K. Penigalapati , Tatsuya Yamanaka
发明人： Leslie Charns , Jason E. Cummings , Lukasz J. Hupka , Dinesh R. Koli , Tomohisa Konno , Mahadevaiyer Krishnan , Michael F. Lofaro , Jakub W. Nalaskowski , Masahiro Noda , Dinesh K. Penigalapati , Tatsuya Yamanaka
IPC分类号： H01L21/306
CPC分类号： H01L21/31053 , H01L29/517 , H01L29/6653 , H01L29/66545
摘要： A polishing method includes polishing, in a first polish, a wafer to remove overburden and planarize a top layer leaving a portion remaining on an underlying layer. A second polishing step includes two phases. In a first phase, the top layer is removed and the underlying layer is exposed, with a top layer to underlying layer selectivity of between about 1:1 to about 2:1 to provide a planar topography. In a second phase, residual portions of the top layer are removed from a top of the underlying layer to ensure complete exposure of an underlying layer surface.
摘要翻译：抛光方法包括在第一抛光剂中抛光晶片以去除覆盖层并平坦化顶层，留下保留在下层上的部分。第二抛光步骤包括两个阶段。在第一阶段中，去除顶层并暴露下层，其顶层至基层选择性为约1:1至约2:1，以提供平面形貌。在第二阶段中，顶层的残余部分从下层的顶部去除，以确保下层的表面完全曝光。

8. 发明申请

US20120083125A1 Chemical Mechanical Planarization With Overburden Mask 有权
标题翻译：化学机械平面化与覆盖面膜
公开(公告)号：US20120083125A1
公开(公告)日：2012-04-05
申请号：US13012821
申请日：2011-01-25
申请人： Leslie Charns , John M. Cotte , Jason E. Cummings , Lukasz J. Hupka , Dinesh R. Koli , Tomohisa Konno , Mahadevaiyer Krishnan , Michael F. Lafaro , Jakub W. Nalaskowski , Masahiro Noda , Dinesh K. Penigalapati , Tatsuya Yamanaka
发明人： Leslie Charns , John M. Cotte , Jason E. Cummings , Lukasz J. Hupka , Dinesh R. Koli , Tomohisa Konno , Mahadevaiyer Krishnan , Michael F. Lafaro , Jakub W. Nalaskowski , Masahiro Noda , Dinesh K. Penigalapati , Tatsuya Yamanaka
IPC分类号： H01L21/311
CPC分类号： H01L21/31053 , H01L29/517 , H01L29/6653 , H01L29/66545
摘要： Planarization methods include depositing a mask material on top of an overburden layer on a semiconductor wafer. The mask material is planarized to remove the mask material from up areas of the overburden layer to expose the overburden layer without removing the mask material from down areas. The exposed overburden layer is wet etched and leaves a thickness remaining over an underlying layer. Remaining portions of the mask layer and the exposed portions of the overburden layer are planarized to expose the underlying layer.
摘要翻译：平面化方法包括在半导体晶片上的覆盖层顶部沉积掩模材料。将掩模材料平坦化以从覆盖层的上部区域去除掩模材料，以暴露覆盖层，而不从掩模材料向下区域移除。暴露的覆盖层被湿蚀刻并留下厚度保留在下层上。掩模层的剩余部分和覆盖层的暴露部分被平坦化以暴露下面的层。

9. 发明申请

US20130005219A1 CHEMICAL MECHANICAL POLISHING AQUEOUS DISPERSION AND CHEMICAL MECHANICAL POLISHING METHOD USING SAME 审中-公开
标题翻译：化学机械抛光水性分散体及化学机械抛光方法
公开(公告)号：US20130005219A1
公开(公告)日：2013-01-03
申请号：US13576418
申请日：2011-01-17
申请人： Akihiro Takemura , Kohei Yoshio , Tatsuya Yamanaka , Tomohisa Konno
发明人： Akihiro Takemura , Kohei Yoshio , Tatsuya Yamanaka , Tomohisa Konno
IPC分类号： C09K13/00 , B24B1/00
CPC分类号： B24B13/015 , B24B29/02 , B24B37/044 , C09G1/02 , C09K3/1463 , H01L21/31053
摘要： A chemical mechanical polishing aqueous dispersion includes (A) silica particles that include at least one functional group selected from the group consisting of a sulfo group or salts thereof, and (B) an acidic compound.
摘要翻译：化学机械研磨水分散体包括（A）二氧化硅颗粒，其包含至少一种选自磺基或其盐的官能团，和（B）酸性化合物。

10. 发明申请

US20130017001A1 TONER REPLENISHING DEVICE AND IMAGE FORMING APPARATUS 有权
标题翻译：调色剂再现装置和图像形成装置
公开(公告)号：US20130017001A1
公开(公告)日：2013-01-17
申请号：US13545434
申请日：2012-07-10
申请人： Tatsuya Yamanaka
发明人： Tatsuya Yamanaka
IPC分类号： G03G15/08
CPC分类号： G03G15/0879
摘要： A toner replenishing device includes a toner conveying portion, a conveying member, a toner loosening member and a swinging member. The toner conveying portion has a vertical conveying portion for vertically conveying toner, and a horizontal conveying portion for horizontally conveying the toner. The conveying member is disposed in the horizontal conveying portion, and has a shaft member and a projecting portion formed around the shaft member. The toner loosening member is disposed in the vertical conveying portion to be swingable up and down. The swinging member is contactable with the conveying member and the toner loosening member. The swinging member swings up and down by a change in a contact portion with respect to the conveying member between the shaft member and the projecting portion, as the conveying member rotates. The toner loosening member swings up and down as the swinging member swings.
摘要翻译：调色剂补充装置包括调色剂传送部分，传送部件，调色剂松开部件和摆动部件。调色剂传送部分具有用于垂直传送调色剂的垂直传送部分和用于水平传送调色剂的水平传送部分。输送构件设置在水平输送部中，并且具有轴构件和形成在轴构件周围的突出部。调色剂松动构件设置在垂直传送部分中以便可上下摆动。摆动构件可与输送构件和调色剂松开构件接触。随着输送构件转动，摆动构件通过相对于轴构件和突出部分之间的输送构件的接触部分的变化而上下摆动。当摆动构件摆动时，调色剂松开构件上下摆动。

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