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1. 发明授权

US4568959A Photomultiplier 失效
标题翻译：光电倍增管
公开(公告)号：US4568959A
公开(公告)日：1986-02-04
申请号：US500502
申请日：1983-06-02
申请人： Leroy L. Chang , Frank F. Fang
发明人： Leroy L. Chang , Frank F. Fang
IPC分类号： H01L31/107 , H01L31/109 , H01L27/14 , H01L31/00
CPC分类号： H01L31/109
摘要： A semiconductor structure is provided with progressively changing band gap in a plurality of stages each at an abrupt interface with an asymmetry in the band gap widths such that the major difference in energy gap discontinuity is in the band favoring a particular type of carrier. The transition regions between the progressive material sections are smaller than the carrier mean free path so as to provide kinetic energy for efficient carrier multiplication with reduced noise as the carriers traverse through the device.
摘要翻译：半导体结构在多个阶段中逐渐变化的带隙具有逐渐变化的带隙，每个级具有在带隙宽度上的不对称性的突然界面，使得能隙差异不连续性的主要差异在有利于特定类型载体的频带中。渐进材料部分之间的过渡区域小于载体平均自由程，以便当载体穿过装置时，提供用于有效载波乘法与降低的噪声的动能。

2. 发明授权

US4939563A Double carrier deflection high sensitivity magnetic sensor 失效
标题翻译：双载波偏转高灵敏度磁传感器
公开(公告)号：US4939563A
公开(公告)日：1990-07-03
申请号：US395836
申请日：1989-08-18
申请人： Frank F. Fang , Denny D. Tang
发明人： Frank F. Fang , Denny D. Tang
IPC分类号： G11B5/127 , G01R33/02 , G01R33/06 , H01L27/22 , H01L29/82 , H01L43/00 , H01L43/06 , H01L43/08
CPC分类号： H01L29/82 , H01L43/065
摘要： Apparatus for a bipolar active semiconductor magnetic field sensor that has a higher sensitivity than semiconductor field sensors presently existing in the art. Specifically, the inventive sensor utilizes a semiconductor structure containing a single emitter layer, a single base layer that is overlaid over the emitter layer and two separate oppositely situated collectors located above the base layer. A bias lateral majority carrier flow is established, in preferably and respectively both the base and emitter layers (electrons in the emitter, holes in the base), that flows in opposite directions in these layers and is oriented normal (transverse) both to the direction of transistor current and to the direction of a magnetic field that is to be detected. When the magnetic field is applied to the sensor, this field imparts a Lorentz force to these carriers which causes these majority carriers to deflect in the same direction in both the emitter and base layers, respectively. The resulting deflection of these carriers, in turn, produces local Hall effect voltages, that are proportional to the strength of the magnetic field, across the emitter-base junction that locally increases the forward bias of this junction near one collector and locally decreases the forward bias of this junction near the other collector so as to exponentially increase the collector current flowing through one collector while exponentially decreasing the collector current flow through the other collector. Inasmuch as the exponential collector current flow is a very sensitive function of emitter-base voltage, the inventive sensor is substantially more sensitive than semiconductor sensors known in the art.

3. 发明授权

US4302764A Nondestructive read-out dynamic memory cell 失效
公开(公告)号：US4302764A
公开(公告)日：1981-11-24
申请号：US53471
申请日：1979-06-29
申请人： Frank F. Fang , Hwa N. Yu
发明人： Frank F. Fang , Hwa N. Yu
IPC分类号： G11C11/35 , G11C16/04 , H01L29/78
CPC分类号： G11C11/35 , G11C16/0466
摘要： A MOSFET which is capable of being placed in two states, one of which is quasi-stable and a memory cell which includes such a device is disclosed. The device basically consists of a pair of diffusions of one conductivity type disposed in a substrate of opposite conductivity type. The channel region between the diffusions is ion implanted or diffused with a dopant which forms a channel of the same conductivity type as the diffusions. A gate electrode is spaced from the channel region by a thin oxide and the gate and substrate are biased so that two states of the device are possible. One is a stable, equilibrium or conducting state wherein an opposite conductivity type inversion layer is formed at the surface of the now buried channel. Another state is a quasi-stable, nonequilibrium, nonconductive state wherein the channel region between the diffusions is depleted of mobile charge carriers. This latter state, after a relatively long period of time in the order of several minutes to hours, decays to the stable or conducting state. By applying appropriately poled pulses to the gate or source of the device, the device may be switched from one of the two conducting states to the other. A dynamic memory cell which includes an addressing FET utilizes the device described above. A word line is connected to the gate of an addressing FET which utilizes as its drain the source of the storage device described above while a bit line is connected to the source of the addressing FET. The latter, when rendered conductive by a potential on its gate, applies appropriate write pulses from a pulsed source to place the storage device in one of its two possible states. One embodiment utilizes an annular or enclosed channel device while a memory cell embodiment utilizes an open channel device, the surface of the channel of which is isolated from the substrate by a surrounding recessed oxide (ROX). The channel surface isolation of the storage device is a requirement without which leakage from substrate to the surface would not permit the achievement of the two states of the device. The quasi-stable state remains for a time which is sufficient for most memory purposes and, to the extent that longer times are required, refreshing of the states is available.

4. 发明授权

US5401980A 2D/1D junction device as a Coulomb blockade gate 失效
标题翻译： 2D / 1D连接器作为库仑封锁门
公开(公告)号：US5401980A
公开(公告)日：1995-03-28
申请号：US122814
申请日：1993-09-16
申请人： Frank F. Fang , Richard A. Webb
发明人： Frank F. Fang , Richard A. Webb
IPC分类号： H01L29/76 , H01L27/12
CPC分类号： B82Y30/00 , B82Y10/00 , H01L29/7606 , Y10S977/937
摘要： A junction is formed by the establishment of first and second adjacent conductivity regions having a transition therebetween from wide (2D) to narrow (1D) with respect to the electron wavelength at the Fermi level. The electrons in the wide region can be propagated at any of a continuum of energies in two dimensions while, in the narrow region, allowable energies become quantized, forming a potential barrier similar to a junction in a tunnel diode. The junction formed in this manner exhibits a Coulomb blockade effect and can be made to operate alternatively as an extremely small capacitance and a conductance to sequentially transfer single electrons, thus forming a Coulomb blockade gate. The Coulomb blockade gate can be used in an oscillator or in digital counting and memory applications.
摘要翻译：通过建立相对于费米能级的电子波长的从宽（2D）到窄（1D）之间的过渡的第一和第二相邻导电区域的建立形成结。宽区域中的电子可以在二维能量中的任何一个能量传播，而在窄区域中允许的能量被量化，形成类似于隧道二极管中的结的势垒。以这种方式形成的接头表现出库仑阻塞效应，并且可以作为极小的电容和电导顺序地操作以依次传送单个电子，从而形成库仑封锁门。库仑封锁门可用于振荡器或数字计数和存储器应用。

5. 发明授权

US4937640A Short channel MOSFET 失效
标题翻译：短沟道MOSFET
公开(公告)号：US4937640A
公开(公告)日：1990-06-26
申请号：US831080
申请日：1986-02-19
申请人： Frank F. Fang , George A. Sai-Halasz
发明人： Frank F. Fang , George A. Sai-Halasz
IPC分类号： H01L29/10 , H01L29/772 , H01L29/786
CPC分类号： H01L29/1083 , H01L29/1033 , H01L29/105 , H01L29/7722 , H01L29/78657
摘要： A field effect transistor having operating characteristics based on the control and modulation of the punch through phenomenon. The channel region between the source and the drain regions is appropriately doped such that the source and drain depletion regions overlap when no potential is applied between source and drain. The overlapped region in the absence of a gate field has a potential barrier. A gate voltage modulates the barrier to below the kT/q parameter. The source-to-drain fields also modulate the barrier.
摘要翻译：一种具有基于穿孔现象的控制和调制的操作特性的场效应晶体管。源极和漏极区域之间的沟道区域被适当掺杂，使得在源极和漏极之间没有施加电势时，源极和漏极耗尽区域重叠。在不存在栅极场的重叠区域具有势垒。栅极电压将势垒调制到kT / q参数以下。源到漏极场也调节障碍。

6. 发明授权

US4757361A Amorphous thin film transistor device 失效
标题翻译：非晶薄膜晶体管器件
公开(公告)号：US4757361A
公开(公告)日：1988-07-12
申请号：US889137
申请日：1986-07-23
申请人： Marc H. Brodsky , Frank F. Fang
发明人： Marc H. Brodsky , Frank F. Fang
IPC分类号： H01L27/12 , H01L23/482 , H01L29/78 , H01L29/786 , H01L29/04
CPC分类号： H01L29/78642 , H01L23/4825 , H01L2924/0002
摘要： A thin film transistor technology where a gate member on a substrate surface is in electric field influenceable proximity to active semiconductor devices in the direction normal to the substrate surface and the ohmic electrodes of the active device are parallel with the substrate surface. The gate is formed on the substrate and conformal coatings of insulator and semiconductor are provided over it. A metal is deposited from the direction normal to the surface that is thicker in the horizontal dimension than the vertical so as to be susceptible to an erosion operation such as a dip etch which separates the metal into self-aligned contact areas on each side of a semiconductor device channel without additional masking. Self-alignment of the source, drain and gate can be achieved by insulator additions above and under the gate fabricated without additional masking.
摘要翻译：一种薄膜晶体管技术，其中衬底表面上的栅极部件在垂直于衬底表面的方向上有源半导体器件的有源电极中的电场和有源器件的欧姆电极的电场平行于衬底表面。栅极形成在基板上，并在其上提供绝缘体和半导体的保形涂层。金属从垂直于表面的方向沉积在水平尺寸上比垂直方向更厚，以便易于受到诸如浸渍蚀刻的侵蚀操作的影响，该浸渍蚀刻将金属分成金属的每一侧上的自对准接触区域半导体器件通道无需额外掩蔽。源极，漏极和栅极的自对准可以通过在没有附加掩模的情况下制造的栅极上方和下方的绝缘体添加来实现。

7. 发明授权

US5099299A Modulation doped base heterojunction bipolar transistor 失效
标题翻译：调制基极异构双极晶体管
公开(公告)号：US5099299A
公开(公告)日：1992-03-24
申请号：US538625
申请日：1990-06-15
申请人： Frank F. Fang
发明人： Frank F. Fang
IPC分类号： H01L29/68 , H01L21/331 , H01L29/73 , H01L29/737
CPC分类号： H01L29/7373
摘要： A modulation doped base heterojunction bipolar transistor wherein the base is a modulation doped heterojunction formed of a layer of p wide gap semiconductor material and a layer of I narrow gap semiconductor material. The collector/base is formed with n+ narrow gap semiconductor material adjacent to the I region of the base. The emitter is n+ wide gap semiconductor material adjacent to the p wide gap layer of the base. The doping concentration and width of the p region of the base is such that all holes are depleted in that region, and a p type inversion layer is formed in the I narrow gap material at its interface with the p wide gap material. This structure provides a modulation doped base heterojunction bipolar transistor which exhibits low base resistance, enhanced performance at low temperatures, a built-in drift field, a reduced emitter injection barrier, no minority carrier storage effects in the base region, and a built-in hot electron effect.

8. 发明授权

US4447746A Digital photodetectors 失效
标题翻译：数字光电探测器
公开(公告)号：US4447746A
公开(公告)日：1984-05-08
申请号：US336490
申请日：1981-12-31
申请人： Frank F. Fang , James C. McGroddy
发明人： Frank F. Fang , James C. McGroddy
IPC分类号： H03K17/30 , H01L27/14 , H01L27/144 , H03K17/78 , H03K17/785 , H03K17/687 , H03K3/42
CPC分类号： H01L27/1443 , H03K17/785
摘要： A digital photodetector circuit having a photosensing stage connected to a depletion mode field effect transistor forming an inverter stage, increased sensitivity is achieved by then coupling the output of the photo inverter to a second photo inverter whose photosensitive element serves as the active load of an enhancement mode field effect transistor in the inverter stage. The circuit is readily fabricated in integrated structures. The circuit performance may be adjusted for responsiveness to light sensitivity and to provide selectable electrical output signal level and impedance matching including bistable performance.
摘要翻译：具有连接到形成逆变器级的耗尽型场效应晶体管的感光级的数字光电检测器电路，通过将光反转器的输出耦合到其感光元件用作增强的有源负载的第二光逆变器来实现增加的灵敏度模式场效应晶体管。该电路容易以一体化结构制造。可以调节电路性能以响应光灵敏度，并提供可选择的电输出信号电平和阻抗匹配，包括双稳态性能。

9. 发明授权

US4326208A Semiconductor inversion layer transistor 失效
标题翻译：半导体反型层晶体管
公开(公告)号：US4326208A
公开(公告)日：1982-04-20
申请号：US134235
申请日：1980-03-26
申请人： Frank F. Fang , George A. Sai-Halasz
发明人： Frank F. Fang , George A. Sai-Halasz
IPC分类号： H01L21/331 , H01L29/205 , H01L29/73 , H01L29/737 , H01L29/80 , H01L29/161
CPC分类号： H01L29/205 , H01L29/7373
摘要： A semiconductor inversion layer transistor which is compatible with semiconductor fabrication technology, and an integrated circuit which incorporates a plurality of such transistors. In one embodiment of the transistor, a P type indium arsenide base and a P type gallium antimonide emitter are used while the collector can be made of either P type gallium antimonide or N type indium arsenide. By the nature of the band alignment at the interface, the indium arsenide base has its Fermi level pinned in the conduction ban at the base-emitter junction and an assymetrically conducting charge barrier which is formed at this junction is preferential to injection of carriers flowing from the emitter to the base rather than vice versa. When the base-emitter junction is forward biased the electrons at the junction are projected across the base with minimal hole injection from base to emitter, thus providing a high gain transistor having excellent high frequency characteristics.
摘要翻译：与半导体制造技术兼容的半导体反型层晶体管，以及并入有多个这样的晶体管的集成电路。在晶体管的一个实施例中，使用P型砷化铟碱基和P型锑化镓发射极，而集电极可由P型锑化镓或N型砷化铟制成。通过界面处的带对准性质，砷化铟锡基底在其基极 - 发射极结处的导通禁止中具有费米能级，并且在该结处形成的非对称传导电荷势垒优先于从发射器到基极，反之亦然。当基极 - 发射极结正向偏置时，结点处的电子通过基极到发射极的最小空穴注入而投射到基极上，从而提供具有优异高频特性的高增益晶体管。

10. 发明授权

US4274104A Electrooptical integrated circuit communication 失效
标题翻译：电光集成电路通信
公开(公告)号：US4274104A
公开(公告)日：1981-06-16
申请号：US41115
申请日：1979-05-21
申请人： Frank F. Fang , Roland Y. Hung
发明人： Frank F. Fang , Roland Y. Hung
IPC分类号： H01L27/15 , H01L31/12 , H01L31/153 , H01S5/00 , H01S5/026 , H04B10/29
CPC分类号： H04B10/29 , H01L27/15 , H01L31/153
摘要： The overall performance of integrated circuit systems is enhanced by the use of optical drivers and receivers to send and receive information between the devices on the chip and between individual chips in a system. A single substrate of gallium arsenide employs both the high carrier mobility properties and the electrooptical signal conversion properties on a single substrate to provide both high performance electrical properties and high density and high performance communication properties.
摘要翻译：集成电路系统的整体性能通过使用光驱动器和接收器在芯片上的器件和系统中的各个芯片之间发送和接收信息来增强。单个砷化镓衬底在单个衬底上采用高载流子迁移率和电光信号转换特性，以提供高性能的电性能和高密度和高性能的通信性能。

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