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1. 发明授权

US5573875A Laser ablation mask and method of fabrication 失效
标题翻译：激光烧蚀掩模和制造方法
公开(公告)号：US5573875A
公开(公告)日：1996-11-12
申请号：US569321
申请日：1995-12-08
申请人： Leon H. Kaplan , Doris P. Pulaski
发明人： Leon H. Kaplan , Doris P. Pulaski
IPC分类号： B23K26/06 , G03F1/00 , G03F7/40 , H01L21/027 , G03F9/00
CPC分类号： G03F1/50 , Y10T428/24355
摘要： A laser ablation mask and a method of fabrication therefor. The mask has a pattern of clear areas and scattering areas. The scattering areas are covered with randomly formed facets. The facets act as scattering centers. Areas clear of facets transmit laser energy. Scattering areas refract laser energy. Laser energy directed at the mask, will pass through the clear mask areas to selectively ablate an organic layer placed opposite the mask. However, laser energy is scattered when striking and passing through the scattering areas such that insufficient laser energy passes directly through the mask to reach the organic layer for ablation to occur. The mask is formed by depositing and patterning a metal mask layer on a quartz plate. The patterned mask layer protects intended clear areas. Scattering areas are formed in unprotected plate areas by subjecting the plate to a polymethacrylic acid/bifluoride solution.
摘要翻译：一种激光烧蚀掩模及其制造方法。掩模具有清晰的区域和散射区域的图案。散射区域被随机形成的小平面覆盖。方面作为散射中心。无光面的区域传输激光能量。散射区折射激光能量。指向面罩的激光能量将通过透明掩模区域，以选择性地烧蚀与掩模相对放置的有机层。然而，当撞击并穿过散射区域时，激光能量被散射，使得激光能量不足直接通过掩模到达有机层以进行消融。通过在石英板上沉积和图案化金属掩模层来形成掩模。图案化掩模层保护预期的清晰区域。散射区域通过使该板接受聚甲基丙烯酸/二氟化物溶液而形成在未受保护的板区域中。

2. 发明授权

US5254202A Fabrication of laser ablation masks by wet etching 失效
标题翻译：通过湿蚀刻制造激光烧蚀掩模
公开(公告)号：US5254202A
公开(公告)日：1993-10-19
申请号：US864838
申请日：1992-04-07
申请人： Leon H. Kaplan
发明人： Leon H. Kaplan
IPC分类号： C04B41/53 , C04B41/91 , G03F1/54 , G03F1/80 , B44C1/22 , C03C15/00 , C03C25/06 , C23F1/00
CPC分类号： C04B41/009 , C04B41/5353 , C04B41/91 , G03F1/54 , G03F1/80 , Y10T428/24331 , Y10T428/24917 , Y10T428/24926
摘要： Tantalum (or hafnium) oxide layers, alternated with silicon oxide layers in a dielectric stack reflector type mask for high power laser ablation, are wet etched at a high temperature with a highly caustic solution, preferably potassium hydroxide, to provide a much increased manufacturing yield in comparison with known processes such as ion milling. High feature density is achieved through the use of a resist which is built in two patterning steps. Preferably, a chromium layer is deposited and covered with an organic resist which is patterned by an optical or electron beam exposure. The chromium is then etched by means of the resist mask to form a resist for the caustic wet etch of the tantalum (or hafnium) oxide either separately or together with silicon oxide layers of the dielectric stack reflector mask to be used in the laser ablation process at high power.
摘要翻译：在用于大功率激光烧蚀的电介质堆叠反射器型掩模中与氧化硅层交替的钽（或铪）氧化物层在高温下用高苛性碱溶液（优选氢氧化钾）进行湿法蚀刻，以提供大大提高的制造成品率与已知的方法如离子研磨相比。通过使用内置于两个图案化步骤中的抗蚀剂来实现高特征密度。优选地，沉积铬层并用有机抗蚀剂覆盖，该有机抗蚀剂通过光学或电子束曝光被图案化。然后通过抗蚀剂掩模蚀刻铬，以形成用于钽（或铪）氧化物的苛性湿法蚀刻的抗蚀剂，分别或与电介质堆叠反射器掩模的氧化硅层一起用于激光烧蚀过程在高功率。

3. 发明授权

US4259430A Photoresist O-quinone diazide containing composition and resist mask formation process 失效
标题翻译：含光抗蚀剂的O-醌二叠氮化物组合物和抗蚀剂掩模形成工艺
公开(公告)号：US4259430A
公开(公告)日：1981-03-31
申请号：US699927
申请日：1976-06-25
申请人： Leon H. Kaplan , Steven M. Zimmerman
发明人： Leon H. Kaplan , Steven M. Zimmerman
IPC分类号： G03F7/022 , G03C1/54 , G03C5/00
CPC分类号： G03F7/0226
摘要： A resist composition includes an alkali soluble resin, a light sensitive diazo compound, and a thermally activated free radical initiator. Resist masks are formed from the above composition by providing a layer of resist on a substrate, exposing the layer patternwise to radiation, removing portions of the layer with a developing solution, and heating the remaining portions of the layer at a temperature which activates the initiator and cross-links the resist to improve the physical characteristics of the resist layer and minimize pattern distortion.
摘要翻译：抗蚀剂组合物包括碱溶性树脂，光敏重氮化合物和热活化的自由基引发剂。通过在基板上设置抗蚀剂层，将图案模式暴露于辐射，用显影液去除层的部分，并在激活引发剂的温度下加热层的剩余部分，从上述组合物形成抗蚀剂掩模并且交联抗蚀剂以改善抗蚀剂层的物理特性并使图案失真最小化。

4. 发明授权

US4414314A Resolution in optical lithography 失效
标题翻译：光刻中的分辨率
公开(公告)号：US4414314A
公开(公告)日：1983-11-08
申请号：US352929
申请日：1982-02-26
申请人： Leon H. Kaplan , Richard D. Kaplan , Steven M. Zimmerman
发明人： Leon H. Kaplan , Richard D. Kaplan , Steven M. Zimmerman
IPC分类号： G03F7/26 , G03F7/039 , G03F7/09 , G03F7/105 , G03F7/11 , H01L21/027 , G03C5/00
CPC分类号： G03F7/091
摘要： Improved resolution in optical lithography, as used in the very large scale integration of electronic circuits, is obtained by employing a thin film of 4-phenylazo-1-naphthylamine between silicon substrate and overlying layer of light sensitive photoresist. The 4-phenylazo-1-naphthylamine acts as a stable, highly light absorbent medium exhibiting chemical and physical compatibility with the silicon substrate and photoresists with ether-type solvent systems.
摘要翻译：通过在硅衬底和光敏光刻胶的上层之间使用4-苯基偶氮-1-萘胺的薄膜，可以获得在电子电路的大规模集成中使用的光学光刻中的改进的分辨率。 4-苯基偶氮-1-萘胺作为稳定的高度光吸收介质，其表现出与硅衬底和具有醚型溶剂体系的光致抗蚀剂的化学和物理相容性。

5. 发明授权

UST973008I4 Method for removing layers of organic material 失效
标题翻译：去除有机材料层的方法
公开(公告)号：UST973008I4
公开(公告)日：1978-08-01
申请号：US858985
申请日：1977-12-09
申请人： Leon H. Kaplan , Nungavaram S. Viswanathan , Steven M. Zimmerman
发明人： Leon H. Kaplan , Nungavaram S. Viswanathan , Steven M. Zimmerman
IPC分类号： H05K3/06 , G03F7/42 , H01L21/027 , H01L21/30
CPC分类号： G03F7/423
摘要： organic materials, such as organic polymer resist layers, are removed from substrates by contacting the materials with a mixture consisting essentially of an alkali metal persulfate and concentrated (96%) sulfuric acid wherein the mixture contains from above about 13 to about 50 grams of alkali metal persulfate per 100 milliliters of sulfuric acid.

6. 发明授权

US4036644A Photoresist process and photosensitive O-quinone diazide article with aliphatic carboxylic acid as adhesion promotor 失效
标题翻译：光致抗蚀剂工艺和光敏O-醌二叠氮化物制品与脂肪族羧酸作为粘合促进剂
公开(公告)号：US4036644A
公开(公告)日：1977-07-19
申请号：US541360
申请日：1975-01-15
申请人： Leon H. Kaplan , John Baldwin Lounsbury , Steven Michael Zimmerman
发明人： Leon H. Kaplan , John Baldwin Lounsbury , Steven Michael Zimmerman
IPC分类号： G03F7/022 , G03F7/085 , G03C5/34 , G03C1/60
CPC分类号： G03F7/0226 , G03F7/085
摘要： Carboxylic acids are included in resists to increase their speed and adhesion.
摘要翻译：抗蚀剂中包含羧酸以增加其速度和粘合力。

7. 发明授权

US4497891A Dry-developed, negative working electron resist system 失效
标题翻译：干式显影，负性工作电子抗蚀系统
公开(公告)号：US4497891A
公开(公告)日：1985-02-05
申请号：US545032
申请日：1983-10-25
申请人： Leon H. Kaplan , Richard D. Kaplan
发明人： Leon H. Kaplan , Richard D. Kaplan
IPC分类号： H01L21/027 , G03F7/038 , G03F7/30 , G03F7/36 , G03C5/00
CPC分类号： G03F7/038 , G03F7/36
摘要： A process for producing a resist pattern by dry development using a resist comprising from 70 to 50% by weight of a novolac resin and from 30 to 50% by weight of a poly(ether pentene sulfone).
摘要翻译：通过使用抗蚀剂通过干展开制造抗蚀剂图案的方法，该抗蚀剂包含70至50重量％的酚醛清漆树脂和30至50重量％的聚（醚戊烯砜）。

8. 发明授权

US4307178A Plasma develoment of resists 失效
标题翻译：抗蚀剂的等离子体发展
公开(公告)号：US4307178A
公开(公告)日：1981-12-22
申请号：US145163
申请日：1980-04-30
申请人： Leon H. Kaplan , Steven M. Zimmerman
发明人： Leon H. Kaplan , Steven M. Zimmerman
IPC分类号： G03F7/022 , G03F7/20 , G03F7/26 , G03F7/30 , G03F7/36 , H01L21/027 , G03C5/18 , G03C5/34
CPC分类号： G03F7/265 , G03F7/022 , G03F7/36
摘要： Exposed patterns in phenol-formaldehyde Novolak resin/diazo ketone resist layers are developed in an oxygen plasma by treating the resist layers, prior to development, with a magnesium salt. This produces a negative pattern. Positive patterns are produced by combining the process with decarboxylation of the exposed areas followed by blanket exposure.
摘要翻译：苯酚 - 甲醛酚醛清漆树脂/重氮酮抗蚀剂层中的曝光图案在氧等离子体中显影，在显影之前用镁盐处理抗蚀剂层。这产生负面的模式。通过将该方法与曝光区域的脱羧结合，然后进行毯式曝光来产生阳性图案。

9. 发明授权

US4007047A Modified processing of positive photoresists 失效
标题翻译：正光致抗蚀剂的改性处理
公开(公告)号：US4007047A
公开(公告)日：1977-02-08
申请号：US639536
申请日：1975-12-10
申请人： Leon H. Kaplan , Steven M. Zimmerman
发明人： Leon H. Kaplan , Steven M. Zimmerman
IPC分类号： G03F7/022 , G03F7/08 , G03C5/00
CPC分类号： G03F7/022
摘要： Positive photoresist layers including a base soluble resin and a diazo ketone sensitizer are treated with hydrogen ion following initial exposure to achieve changes in the developed resist profile and/or development in a negative mode.
摘要翻译：包含基础可溶性树脂和重氮酮敏化剂的正性光致抗蚀剂层在初始曝光后用氢离子处理以实现显影抗蚀剂图案和/或负模式显影的变化。

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