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1. 发明授权

US07396431B2 Plasma processing system for treating a substrate 有权
标题翻译：用于处理基材的等离子体处理系统
公开(公告)号：US07396431B2
公开(公告)日：2008-07-08
申请号：US10953801
申请日：2004-09-30
申请人： Lee Chen , Hiromitsu Kambara , Caizhong Tian , Tetsuya Nishizuka , Toshihisa Nozawa
发明人： Lee Chen , Hiromitsu Kambara , Caizhong Tian , Tetsuya Nishizuka , Toshihisa Nozawa
IPC分类号： C23C16/00 , C23F1/00 , H01L21/306
CPC分类号： H01J37/32211 , H01J37/32082 , H01J37/32192
摘要： A plasma processing system for treating a substrate includes a processing chamber including a first chamber portion configured to receive a first gas for providing a plasma space, and a second chamber portion configured to receive a second gas for providing a process space having process chemistry to treat the substrate. A substrate holder is coupled to the second chamber portion of the processing chamber, and configured to support the substrate proximate the process space, and a plasma source is coupled to the first chamber portion of the processing chamber, and configured to form a plasma in the plasma space. A grid is located between the plasma space and the process space, and configured to permit the diffusion of the plasma between the plasma space and the process space in order to form the process chemistry from the process gas.
摘要翻译：用于处理衬底的等离子体处理系统包括处理室，该处理室包括构造成容纳用于提供等离子体空间的第一气体的第一室部分和被配置为接收第二气体的第二室部分，用于提供具有处理化学物质的处理空间以处理底物。衬底保持器联接到处理室的第二室部分，并且被配置成在接近处理空间的位置支撑衬底，并且等离子体源耦合到处理室的第一室部分，并且被配置成在处理室中形成等离子体等离子体空间栅格位于等离子体空间和处理空间之间，并且被配置为允许等离子体在等离子体空间和处理空间之间的扩散，以便从工艺气体形成工艺化学物质。

2. 发明申请

US20060065367A1 Plasma processing system for treating a substrate 有权
标题翻译：用于处理基材的等离子体处理系统
公开(公告)号：US20060065367A1
公开(公告)日：2006-03-30
申请号：US10953801
申请日：2004-09-30
申请人： Lee Chen , Hiromitsu Kambara , Caiz Tian , Tetsuya Nishizuka , Toshihisa Nozawa
发明人： Lee Chen , Hiromitsu Kambara , Caiz Tian , Tetsuya Nishizuka , Toshihisa Nozawa
IPC分类号： H01L21/306
CPC分类号： H01J37/32211 , H01J37/32082 , H01J37/32192
摘要： A plasma processing system for treating a substrate includes a processing chamber including a first chamber portion configured to receive a first gas for providing a plasma space, and a second chamber portion configured to receive a second gas for providing a process space having process chemistry to treat the substrate. A substrate holder is coupled to the second chamber portion of the processing chamber, and configured to support the substrate proximate the process space, and a plasma source is coupled to the first chamber portion of the processing chamber, and configured to form a plasma in the plasma space. A grid is located between the plasma space and the process space, and configured to permit the diffusion of the plasma between the plasma space and the process space in order to form the process chemistry from the process gas.
摘要翻译：用于处理衬底的等离子体处理系统包括处理室，该处理室包括构造成容纳用于提供等离子体空间的第一气体的第一室部分和被配置为接收第二气体的第二室部分，用于提供具有处理化学物质的处理空间以处理底物。衬底保持器联接到处理室的第二室部分，并且被配置成在接近处理空间的位置支撑衬底，并且等离子体源耦合到处理室的第一室部分，并且被配置成在处理室中形成等离子体等离子体空间栅格位于等离子体空间和处理空间之间，并且被配置为允许等离子体在等离子体空间和处理空间之间的扩散，以便从工艺气体形成工艺化学物质。

3. 发明申请

US20100032094A1 CEILING PLATE AND PLASMA PROCESS APPARATUS 有权
标题翻译：天花板和等离子体工艺设备
公开(公告)号：US20100032094A1
公开(公告)日：2010-02-11
申请号：US12441429
申请日：2008-08-20
申请人： Caizhong Tian , Tetsuya Nishizuka , Kiyotaka Ishibashi , Toshihisa Nozawa
发明人： Caizhong Tian , Tetsuya Nishizuka , Kiyotaka Ishibashi , Toshihisa Nozawa
IPC分类号： H01L21/306 , C23C16/54
CPC分类号： H01L21/461 , C23C16/511 , H01J37/32192 , H01J37/3222 , H05H1/46 , Y10T428/24273
摘要： A ceiling plate provided at a ceiling portion of a process chamber that may be evacuated to a vacuum is disclosed. The ceiling plate allows microwaves emitted from a slot of a planar antenna member provided along with the ceiling plate to pass through the ceiling plate into the process chamber, and includes plural protrusion portions provided in a radial pattern on a surface of the ceiling plate, the surface facing toward an inside of the process chamber.
摘要翻译：公开了一种设置在可以被抽真空的处理室的顶部的顶板。顶棚板允许从天花板板设置的平面天线构件的槽口发射的微波通过顶板进入处理室，并且包括在天花板的表面上以放射状图案设置的多个突起部分，表面朝向处理室的内部。

4. 发明授权

US08480848B2 Plasma processing apparatus 有权
标题翻译：等离子体处理装置
公开(公告)号：US08480848B2
公开(公告)日：2013-07-09
申请号：US12095262
申请日：2006-11-15
申请人： Caizhong Tian , Tetsuya Nishizuka , Toshihisa Nozawa
发明人： Caizhong Tian , Tetsuya Nishizuka , Toshihisa Nozawa
IPC分类号： C23C16/00 , C23F1/00 , H01L21/306
CPC分类号： H05H1/46 , H01J37/32192 , H01J37/3222 , H01J37/3244
摘要： The present invention relates to a plasma processing apparatus including: a processing chamber whose ceiling portion is opened and the inside thereof can be evacuated to vacuum; a ceiling plate which is made of dielectric material and is airtightly mounted to an opening of the ceiling portion; a planar antenna member which is installed on a top surface of the ceiling plate, for introducing a microwave into the processing chamber; and a coaxial waveguide, which has a central conductor connected to the planar antenna member, for supplying the microwave, wherein a gas passage is formed to pass through the central conductor, the planar antenna member, and the ceiling plate, and an electric field attenuating recess for attenuating an electric field intensity of the center portion of the ceiling plate is installed on a top surface of a center area of the ceiling plate.
摘要翻译：等离子体处理装置技术领域本发明涉及一种等离子体处理装置，其特征在于，包括：顶棚部分打开并且其内部可被抽真空的处理室; 由介电材料制成并且气密地安装到顶部的开口的顶板; 平面天线构件，其安装在所述顶板的顶面上，用于将微波导入所述处理室; 以及具有连接到平面天线构件的中心导体用于供给微波的同轴波导，其中形成气体通道以穿过中心导体，平面天线构件和顶板，并且电场衰减用于衰减顶板的中心部分的电场强度的凹部安装在顶板的中心区域的顶表面上。

5. 发明授权

US08343308B2 Ceiling plate and plasma process apparatus 有权
标题翻译：天花板和等离子体处理装置
公开(公告)号：US08343308B2
公开(公告)日：2013-01-01
申请号：US12441429
申请日：2008-08-20
申请人： Caizhong Tian , Tetsuya Nishizuka , Kiyotaka Ishibashi , Toshihisa Nozawa
发明人： Caizhong Tian , Tetsuya Nishizuka , Kiyotaka Ishibashi , Toshihisa Nozawa
IPC分类号： C23C16/00 , C23F1/00 , H01L21/306
CPC分类号： H01L21/461 , C23C16/511 , H01J37/32192 , H01J37/3222 , H05H1/46 , Y10T428/24273
摘要： A ceiling plate provided at a ceiling portion of a process chamber that may be evacuated to a vacuum is disclosed. The ceiling plate allows microwaves emitted from a slot of a planar antenna member provided along with the ceiling plate to pass through the ceiling plate into the process chamber, and includes plural concave portions provided along a circle on a surface of the ceiling plate, the surface facing toward an inside of the process chamber.
摘要翻译：公开了一种设置在可以被抽真空的处理室的顶部的顶板。顶板允许从天花板板一侧设置的平面天线构件的槽口发出的微波通过顶板进入处理室，并且包括沿着顶板的表面沿着圆形设置的多个凹部，面向处理室的内部。

6. 发明申请

US20090242130A1 PLASMA PROCESSING APPARATUS 有权
标题翻译：等离子体加工设备
公开(公告)号：US20090242130A1
公开(公告)日：2009-10-01
申请号：US12095262
申请日：2006-11-15
申请人： Caizhong Tian , Tetsuya Nishizuka , Toshihisa Nozawa
发明人： Caizhong Tian , Tetsuya Nishizuka , Toshihisa Nozawa
IPC分类号： B44C1/22 , C23C16/00
CPC分类号： H05H1/46 , H01J37/32192 , H01J37/3222 , H01J37/3244
摘要： The present invention relates to a plasma processing apparatus including: a processing chamber whose ceiling portion is opened and the inside thereof can be evacuated to vacuum; a ceiling plate which is made of dielectric material and is airtightly mounted to an opening of the ceiling portion; a planar antenna member which is installed on a top surface of the ceiling plate, for introducing a microwave into the processing chamber; and a coaxial waveguide, which has a central conductor connected to the planar antenna member, for supplying the microwave, wherein a gas passage is formed to pass through the central conductor, the planar antenna member, and the ceiling plate, and an electric field attenuating recess for attenuating an electric field intensity of the center portion of the ceiling plate is installed on a top surface of a center area of the ceiling plate.
摘要翻译：等离子体处理装置技术领域本发明涉及一种等离子体处理装置，其特征在于，包括：顶棚部分打开并且其内部可被抽真空的处理室; 由介电材料制成并且气密地安装到顶部的开口的顶板; 平面天线构件，其安装在所述顶板的顶面上，用于将微波导入所述处理室; 以及具有连接到平面天线构件的中心导体用于供给微波的同轴波导，其中形成气体通道以穿过中心导体，平面天线构件和顶板，并且电场衰减用于衰减顶板的中心部分的电场强度的凹部安装在顶板的中心区域的顶表面上。

7. 发明授权

US07268084B2 Method for treating a substrate 有权
标题翻译：处理基材的方法
公开(公告)号：US07268084B2
公开(公告)日：2007-09-11
申请号：US10954086
申请日：2004-09-30
申请人： Lee Chen , Hitomitsu Kambara , Caiz Hong Tian , Tetsuya Nishizuka , Toshihisa Nozawa
发明人： Lee Chen , Hitomitsu Kambara , Caiz Hong Tian , Tetsuya Nishizuka , Toshihisa Nozawa
IPC分类号： H01L21/302
CPC分类号： H01J37/32706 , H01J37/32211 , H01J37/3244 , H01L21/31116
摘要： A method of treating a substrate includes disposing the substrate in a processing chamber having a first chamber portion configured to define a plasma space and a second chamber portion configured to define a process space, introducing a first gas to the plasma space and introducing a second gas to the process space. A plasma is formed in the plasma space from the first gas using a plasma source coupled to the upper chamber portion, and a process chemistry for treating the substrate is formed in the process space by providing a grid positioned between the first chamber portion and the second chamber portion such that the plasma can diffuse from the plasma space to the process space.
摘要翻译：处理衬底的方法包括将衬底设置在具有被配置为限定等离子体空间的第一室部分的处理室中，以及构造成限定处理空间的第二室部分，将第一气体引入等离子体空间并引入第二气体到过程空间。在等离子体空间中，使用与上室部分相连的等离子体源，在等离子体空间中形成等离子体，通过提供位于第一室部分和第二部分之间的格栅，在处理空间中形成用于处理基板的工艺化学品室部分，使得等离子体可以从等离子体空间扩散到处理空间。

8. 发明申请

US20060065629A1 Method for treating a substrate 有权
标题翻译：处理基材的方法
公开(公告)号：US20060065629A1
公开(公告)日：2006-03-30
申请号：US10954086
申请日：2004-09-30
申请人： Lee Chen , Hitomitsu Kambara , Caiz Tian , Tetsuya Nishizuka , Toshihisa Nozawa
发明人： Lee Chen , Hitomitsu Kambara , Caiz Tian , Tetsuya Nishizuka , Toshihisa Nozawa
IPC分类号： C23F1/00 , B44C1/22 , H01L21/302
CPC分类号： H01J37/32706 , H01J37/32211 , H01J37/3244 , H01L21/31116
摘要： A method of treating a substrate includes disposing the substrate in a processing chamber having a first chamber portion configured to define a plasma space and a second chamber portion configured to define a process space, introducing a first gas to the plasma space and introducing a second gas to the process space. A plasma is formed in the plasma space from the first gas using a plasma source coupled to the upper chamber portion, and a process chemistry for treating the substrate is formed in the process space by providing a grid positioned between the first chamber portion and the second chamber portion such that the plasma can diffuse from the plasma space to the process space.
摘要翻译：处理衬底的方法包括将衬底设置在具有被配置为限定等离子体空间的第一室部分的处理室中，以及构造成限定处理空间的第二室部分，将第一气体引入等离子体空间并引入第二气体到过程空间。在等离子体空间中，使用与上室部分相连的等离子体源，在等离子体空间中形成等离子体，通过提供位于第一室部分和第二部分之间的格栅，在处理空间中形成用于处理基板的工艺化学品室部分，使得等离子体可以从等离子体空间扩散到处理空间。

9. 发明申请

US20090266487A1 MICROWAVE INTRODUCTION DEVICE 审中-公开
标题翻译： MICROWAVE介绍设备
公开(公告)号：US20090266487A1
公开(公告)日：2009-10-29
申请号：US12094815
申请日：2006-11-15
申请人： Caizhong Tian , Tamaki Yuasa , Toshihisa Nozawa
发明人： Caizhong Tian , Tamaki Yuasa , Toshihisa Nozawa
IPC分类号： H01L21/465 , C23C16/511 , H05B6/64
CPC分类号： H05H1/46 , H01J37/32192 , H01J37/32211
摘要： A microwave introduction device includes a microwave generator for generating a microwave of a predetermined frequency, a mode converter for converting the microwave into a predetermined oscillation mode, a planar antenna member arranged toward a predetermined space, and a coaxial waveguide connecting the mode converter with the planar antenna member to propagate the microwave. A central conductor of the coaxial waveguide is formed in a cylindrical shape, an inner diameter D1 of the central conductor is not smaller than a first predetermined value, and an outer conductor of the central conductor is also formed in a cylindrical shape. A ratio r1/r2 of a radius r1 of an inner diameter of the outer conductor to a radius r2 of an outer diameter of the central conductor is maintained at a second predetermined value and the inner diameter D2 the outer conductor is not greater than a third predetermined value.
摘要翻译：微波引入装置包括用于产生预定频率的微波的微波发生器，用于将微波转换成预定振荡模式的模式转换器，朝向预定空间布置的平面天线部件以及将模式转换器与平面天线部件传播微波。同轴波导的中心导体形成为圆筒形状，中心导体的内径D1不小于第一预定值，中心导体的外导体也形成为圆柱形。外导体的内径的半径r1与中心导体的外径的半径r2的比率r1 / r2保持在第二规定值，外径D2的外径不大于第三预定值。

10. 发明申请

US20130302992A1 APPARATUS FOR PLASMA TREATMENT AND METHOD FOR PLASMA TREATMENT 有权
标题翻译：等离子体处理装置和等离子体处理方法
公开(公告)号：US20130302992A1
公开(公告)日：2013-11-14
申请号：US13885708
申请日：2011-11-16
申请人： Toshihisa Nozawa , Caizhong Tian , Masaru Sasaki , Naoki Mihara , Naoki Matsumoto , Kazuki Moyama , Jun Yoshikawa
发明人： Toshihisa Nozawa , Caizhong Tian , Masaru Sasaki , Naoki Mihara , Naoki Matsumoto , Kazuki Moyama , Jun Yoshikawa
IPC分类号： H05H1/46
CPC分类号： H05H1/46 , H01J37/32192 , H01J37/32211 , H01J37/3244
摘要： An apparatus for plasma treatment contains a process vessel provided with a mounting table for mounting a substrate, a first gas supplying unit configured to supply a first gas into the process vessel, a first plasma generating unit configured to convert at least a part of the first gas to a first plasma, a second gas supplying unit configured to supply a second gas into the process vessel, and a second plasma generating unit configured to convert at least a part of the second gas to a second plasma. A height of ea an inlet of the second gas from the mounting table is lower than a height of an inlet of the first gas from the mounting table.
摘要翻译：一种用于等离子体处理的装置，包括设置有用于安装基板的安装台的处理容器，构造成将第一气体供应到处理容器中的第一气体供给单元，第一等离子体产生单元，其被配置为将第一第二气体供给单元，被配置为将第二气体供应到处理容器中;第二等离子体产生单元，被配置为将至少一部分第二气体转化为第二等离子体。来自安装台的第二气体的入口的高度低于来自安装台的第一气体的入口的高度。

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