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1. 发明授权

US07884355B2 Polymer transistor 有权
标题翻译：聚合物晶体管
公开(公告)号：US07884355B2
公开(公告)日：2011-02-08
申请号：US10556404
申请日：2004-05-12
申请人： Lay-Lay Chua , Peter Kian-Hoon Ho , Henning Sirringhaus , Richard Henry Friend
发明人： Lay-Lay Chua , Peter Kian-Hoon Ho , Henning Sirringhaus , Richard Henry Friend
IPC分类号： H01L35/24
CPC分类号： H01L51/0002 , C07C247/16 , G03C1/695 , H01L51/0003 , H01L51/0035 , H01L51/0037 , H01L51/0038 , H01L51/0039 , H01L51/0043 , H01L51/0059 , H01L51/052
摘要： A transistor including a semiconductive layer; and a gate dielectric layer comprising an insulating polymer, characterised in that the insulating polymer is crosslinked and comprises one or more units having a low cohesive-energy-density and one or more crosslinking groups and the insulating polymer includes substantially no residual —OH leaving groups.
摘要翻译：一种包括半导体层的晶体管; 以及包含绝缘聚合物的栅极电介质层，其特征在于，所述绝缘聚合物是交联的，并且包含具有低内聚能量密度和一个或多个交联基团的一个或多个单元，并且所述绝缘聚合物基本上不包括残余的-OH离去基团。

2. 发明授权

US07718549B2 Method of making a polymer device 有权
标题翻译：制造聚合物装置的方法
公开(公告)号：US07718549B2
公开(公告)日：2010-05-18
申请号：US10566984
申请日：2004-08-11
申请人： Lay-lay Chua , Peter Kian-Hoon Ho , Henning Sirringhaus , Richard Henry Friend
发明人： Lay-lay Chua , Peter Kian-Hoon Ho , Henning Sirringhaus , Richard Henry Friend
IPC分类号： H01L21/31 , H01L21/469
CPC分类号： H01L51/0003 , B82Y10/00 , B82Y30/00 , H01L51/0012 , H01L51/0028
摘要： A method of making a transistor having first and second electrodes, a semiconductive layer, and a dielectric layer; said semiconductive layer comprising a semiconductive polymer and said dielectric layer comprising an insulating polymer; characterised in that said method comprises the steps of: (i) depositing on the first electrode a layer of a solution containing material for forming the semiconductive layer and material for forming the dielectric layer; and (ii) optionally curing the layer deposited in step (i); wherein, in step (i), the solvent drying time, the temperature of the first electrode and the weight ratio, of (material for forming the dielectric layer): (material for forming the semiconductive layer) in the solution are selected so that the material for forming the semiconductive layer and the material for forming the dielectric layer phase separate by self-organisation to form an interface between the material for forming the semiconductive layer and the material for forming the dielectric layer.
摘要翻译：一种制造具有第一和第二电极的晶体管的方法，半导体层和电介质层; 所述半导体层包括半导体聚合物，所述介电层包含绝缘聚合物; 其特征在于所述方法包括以下步骤：（i）在第一电极上沉积含有用于形成半导体层的材料的溶液层和用于形成介电层的材料; 和（ii）任选地固化在步骤（i）中沉积的层; 其中，在步骤（i）中，选择溶液中的（用于形成介电层的材料）的溶剂干燥时间，第一电极的温度和重量比：（用于形成半导体层的材料），使得用于形成半导体层的材料和用于形成电介质层相的材料通过自组织分离，以在用于形成半导体层的材料和用于形成电介质层的材料之间形成界面。

3. 发明申请

US20070071881A1 Method of making a polymer device 有权
标题翻译：制造聚合物装置的方法
公开(公告)号：US20070071881A1
公开(公告)日：2007-03-29
申请号：US10566984
申请日：2004-08-11
申请人： Lay-lay Chua , Peter Ho , Henning Sirringhaus , Richard Friend
发明人： Lay-lay Chua , Peter Ho , Henning Sirringhaus , Richard Friend
IPC分类号： B05D5/12 , B05C11/00
CPC分类号： H01L51/0003 , B82Y10/00 , B82Y30/00 , H01L51/0012 , H01L51/0028
摘要： A method of making a transistor having first and second electrodes, a semiconductive layer, and a dielectric layer; said semiconductive layer comprising a semiconductive polymer and said dielectric layer comprising an insulating polymer; characterised in that said method comprises the steps of: (i) depositing on the first electrode a layer of a solution containing material for forming the semiconductive layer and material for forming the dielectric layer; and (ii) optionally curing the layer deposited in step (i); wherein, in step (i), the solvent drying time, the temperature of the first electrode and the weight ratio, of (material for forming the dielectric layer): (material for forming the semiconductive layer) in the solution are selected so that the material for forming the semiconductive layer and the material for forming the dielectric layer phase separate by self-organisation to form an interface between the material for forming the semiconductive layer and the material for forming the dielectric layer.
摘要翻译：一种制造具有第一和第二电极的晶体管的方法，半导体层和电介质层; 所述半导体层包括半导体聚合物，所述介电层包含绝缘聚合物; 其特征在于所述方法包括以下步骤：（i）在第一电极上沉积含有用于形成半导体层的材料的溶液层和用于形成介电层的材料; 和（ii）任选地固化在步骤（i）中沉积的层; 其中，在步骤（i）中，选择溶液中的（用于形成介电层的材料）的溶剂干燥时间，第一电极的温度和重量比：（用于形成半导体层的材料），使得用于形成半导体层的材料和用于形成电介质层相的材料通过自组织分离，以在用于形成半导体层的材料和用于形成电介质层的材料之间形成界面。

4. 发明申请

US20060284166A1 Polymer transistor 有权
标题翻译：聚合物晶体管
公开(公告)号：US20060284166A1
公开(公告)日：2006-12-21
申请号：US10556404
申请日：2004-05-12
申请人： Lay-Lay Chua , Peter Ho , Henning Sirringhaus , Richard Friend
发明人： Lay-Lay Chua , Peter Ho , Henning Sirringhaus , Richard Friend
IPC分类号： H01L29/08 , H01L51/40
CPC分类号： H01L51/0002 , C07C247/16 , G03C1/695 , H01L51/0003 , H01L51/0035 , H01L51/0037 , H01L51/0038 , H01L51/0039 , H01L51/0043 , H01L51/0059 , H01L51/052
摘要： A transistor including a semiconductive layer; and a gate dielectric layer comprising an insulating polymer, characterised in that the insulating polymer is crosslinked and comprises one or more units having a low cohesive-energy-density and one or more crosslinking groups and the insulating polymer includes substantially no residual —OH leaving groups.
摘要翻译：一种包括半导体层的晶体管; 以及包含绝缘聚合物的栅极电介质层，其特征在于，所述绝缘聚合物是交联的并且包含具有低内聚能量密度和一个或多个交联基团的一个或多个单元，并且所述绝缘聚合物基本上不包括残余的-OH离去基团。

5. 发明申请

US20070278478A1 Ambipolar, Light-Emitting Field-Effect Transistors 审中-公开
标题翻译：双极，发光场效应晶体管
公开(公告)号：US20070278478A1
公开(公告)日：2007-12-06
申请号：US10586244
申请日：2005-01-17
申请人： Jana Zaumseil , Henning Sirringhaus , Lay-Lay Chua , Peter Ho , Richard Friend
发明人： Jana Zaumseil , Henning Sirringhaus , Lay-Lay Chua , Peter Ho , Richard Friend
IPC分类号： H01L51/50 , H01L21/312
CPC分类号： H01L51/5296 , B82Y10/00 , H01L21/02118 , H01L21/02126 , H01L21/3122 , H01L51/0022 , H01L51/0023 , H01L51/0036 , H01L51/0038 , H01L51/0039 , H01L51/0043 , H01L51/0046 , H01L51/0508 , H01L51/0516 , H01L51/0545 , H01L51/52 , H01L51/5203 , H01L51/56 , H05B33/08
摘要： An ambipolar, light-emitting transistor comprising an organic semiconductive layer in contact with an electron injecting electrode and a hole injecting electrode separated by a distance L defining the channel length of the transistor, in which the zone of the organic semiconductive layer from which the light is emitted is located more than L/10 away from both the electron as well as the hole injecting electrode.
摘要翻译：一种双极型发光晶体管，包括与电子注入电极接触的有机半导体层和分隔开距离L的空穴注入电极，所述距离限定了所述晶体管的沟道长度，其中所述有机半导体层的所述区域被发射的位置距离电子以及空穴注入电极都大于L / 10。

6. 发明授权

US07307277B2 Organic field effect transistors 失效
标题翻译：有机场效应晶体管
公开(公告)号：US07307277B2
公开(公告)日：2007-12-11
申请号：US10841807
申请日：2004-05-07
申请人： Gitti Frey , Kieran John Reynolds , Henning Sirringhaus , Richard Henry Friend
发明人： Gitti Frey , Kieran John Reynolds , Henning Sirringhaus , Richard Henry Friend
IPC分类号： H01L35/24 , H01L51/40
CPC分类号： H01L51/0516 , H01L51/0021 , H01L51/0036 , H01L51/0039 , H01L51/0043 , H01L51/0541 , H01L51/0545
摘要： A field effect transistor is provided which comprises a gate electrode, a source electrode, a drain electrode, at least one organic semiconducting layer, and a hole transport layer for transferring holes from said source and drain electrodes to said organic semiconducting layer, wherein said hole transport layer comprises a layered metal chalcogenide. Processes for depositing a thin layer of a layered metal dichalcogenide on a substrate and for producing top gate structures on a layered metal chalcogenide layer in the manufacture of field effect transistors according to the invention are also provided.
摘要翻译：提供一种场效应晶体管，其包括栅电极，源电极，漏电极，至少一个有机半导体层和用于将空穴从所述源电极和漏电极传送到所述有机半导体层的空穴传输层，其中所述孔传输层包括层状金属硫族化物。还提供了在根据本发明的场效应晶体管的制造中，在层叠的金属硫族化物层上沉积层状金属二硫属元素的薄层并在基板上形成顶栅结构的工艺。

7. 发明授权

US07098061B2 Forming interconnects using locally deposited solvents 有权
标题翻译：使用局部保存的溶剂形成互连
公开(公告)号：US07098061B2
公开(公告)日：2006-08-29
申请号：US10176173
申请日：2002-06-21
申请人： Henning Sirringhaus , Richard Henry Friend , Takeo Kawase
发明人： Henning Sirringhaus , Richard Henry Friend , Takeo Kawase
IPC分类号： H01L21/00
CPC分类号： H01L51/52 , B82Y30/00 , H01L21/31133 , H01L21/76838 , H01L27/283 , H01L27/32 , H01L51/0004 , H01L51/0012 , H01L51/0019 , H01L51/002 , H01L51/0021 , H01L51/0023 , H01L51/052 , H01L51/0541 , H01L51/0545
摘要： A method for forming an electronic device, comprising: forming a first conductive or semiconductive layer; forming a sequence of at least on insulating layer and at least one semiconducting layer over the first conductive or semiconductive layer; locally depositing solvents at a localised region of the insulating layer so as to dissolve the sequence of insulating and semiconducting layers in the region to leave a void extending through the sequence of layer; and depositing conductive or semiconductive material in the void.
摘要翻译：一种形成电子器件的方法，包括：形成第一导电或半导体层; 在所述第一导电或半导体层上形成至少绝缘层和至少一个半导体层的序列; 在绝缘层的局部区域局部沉积溶剂，以便溶解该区域中绝缘和半导体层的序列以留下延伸穿过该层序列的空隙; 以及在所述空隙中沉积导电或半导体材料。

8. 发明授权

US06905906B2 Solution processed devices 有权
标题翻译：解决方案处理的设备
公开(公告)号：US06905906B2
公开(公告)日：2005-06-14
申请号：US10176007
申请日：2002-06-21
申请人： Henning Sirringhaus , Takeo Kawase , Richard Henry Friend
发明人： Henning Sirringhaus , Takeo Kawase , Richard Henry Friend
IPC分类号： H01L21/28 , H01L21/311 , H01L21/336 , H01L21/768 , H01L27/32 , H01L29/786 , H01L51/00 , H01L51/05 , H01L51/30 , H01L51/40
CPC分类号： H01L51/0012 , B82Y30/00 , H01L21/31133 , H01L21/76838 , H01L27/283 , H01L27/32 , H01L51/0004 , H01L51/0018 , H01L51/002 , H01L51/0021 , H01L51/052 , H01L51/0541 , H01L51/0545
摘要： A method for forming a transistor, comprising: depositing a first material from solution in a first solvent to form a first layer of the transistor, and subsequently whilst the first material remains soluble in the first solvent, forming a second layer of the transistor by depositing over the first material a second material from solution in a second solvent in which the first material is substantially insoluble.
摘要翻译：一种用于形成晶体管的方法，包括：将溶液中的第一材料沉积在第一溶剂中以形成晶体管的第一层，随后在第一材料保持溶于第一溶剂的同时，通过沉积形成晶体管的第二层在第一种材料中从第二种溶剂中溶解第二种材料，其中第一种材料基本上不溶解。

9. 发明授权

US07572651B2 Inkjet-fabricated integrated circuits 有权
标题翻译：喷墨制造的集成电路
公开(公告)号：US07572651B2
公开(公告)日：2009-08-11
申请号：US10901172
申请日：2004-07-29
申请人： Henning Sirringhaus , Richard Henry Friend , Takeo Kawase
发明人： Henning Sirringhaus , Richard Henry Friend , Takeo Kawase
IPC分类号： H01L21/00
CPC分类号： H01L51/52 , B82Y10/00 , B82Y30/00 , H01L21/31133 , H01L21/76838 , H01L27/283 , H01L27/32 , H01L51/0005 , H01L51/0012 , H01L51/0018 , H01L51/002 , H01L51/0021 , H01L51/052 , H01L51/0541 , H01L51/0545
摘要： A method for forming an integrated circuit including at least two interconnected electronic switching devices, the method comprising forming at least part of the electronic switching devices by ink-jet printing.
摘要翻译：一种用于形成包括至少两个互连的电子开关装置的集成电路的方法，所述方法包括通过喷墨打印形成所述电子开关装置的至少一部分。

10. 发明授权

US07571529B2 Method for forming an electronic device in multi-layer structure 有权
标题翻译：用于形成多层结构的电子装置的方法
公开(公告)号：US07571529B2
公开(公告)日：2009-08-11
申请号：US10398442
申请日：2001-10-04
申请人： Henning Sirringhaus , Richard Henry Friend , Natalie Stutzmann , Paul Smith
发明人： Henning Sirringhaus , Richard Henry Friend , Natalie Stutzmann , Paul Smith
IPC分类号： B23P17/00
CPC分类号： H01L51/0508 , B82Y30/00 , H01L27/283 , H01L51/0005 , H01L51/0014 , H01L51/0022 , H01L51/0037 , H01L51/0039 , H01L51/055 , H01L51/057 , H01L2251/105 , Y10T29/14 , Y10T29/49117 , Y10T29/49126 , Y10T29/49128 , Y10T29/4913 , Y10T29/49798
摘要： A method for forming an organic or partly organic switching device, comprising: depositing layers of conducting, semiconducting and/or insulating layers by solution processing and direct printing; defining microgrooves in the multilayer structure by solid state embossing; and forming a switching device inside the microgroove.
摘要翻译：一种用于形成有机或部分有机开关器件的方法，包括：通过溶液处理和直接印刷沉积导电，半导体和/或绝缘层的层; 通过固态压花在多层结构中限定微槽; 以及在所述微槽内形成开关装置。

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