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    • 8. 发明授权
    • Sequential state elements in triple-mode redundant (TMR) state machines
    • 三模冗余(TMR)状态机中的顺序状态元素
    • US09038012B2
    • 2015-05-19
    • US14304155
    • 2014-06-13
    • Lawrence T. ClarkNathan D. HindmanDan Wheeler Patterson
    • Lawrence T. ClarkNathan D. HindmanDan Wheeler Patterson
    • G06F17/50H03K19/173H03K19/003
    • G06F17/5072G06F17/505H03K19/00315
    • The disclosure relates generally to triple-redundant sequential state (TRSS) machines formed as integrated circuits on a semiconductor substrate, such as CMOS, and computerized methods and systems of designing the triple-redundant sequential state machines. Of particular focus in this disclosure are sequential state elements (SSEs) used to sample and hold bit states. The sampling and holding of bits states are synchronized by a clock signal thereby allowing for pipelining in the TRSS machines. In particular, the clock signal may oscillate between a first clock state and a second clock state to synchronize the operation of the SSE according to the timing provided by the clock states. The SSEs has a self-correcting mechanism to protect against radiation induced soft errors. The SSE may be provided in a pipeline circuit of a TRSS machine to receive and store a bit state of bit signal generated by combinational circuits within the pipeline circuit.
    • 本公开一般涉及形成为诸如CMOS的半导体衬底上的集成电路的三冗余顺序状态(TRSS)机器,以及设计三重冗余顺序状态机的计算机化方法和系统。 本公开中特别关注的是用于采样和保持位状态的顺序状态元素(SSE)。 位状态的采样和保持由时钟信号同步,从而允许在TRSS机器中流水线化。 具体地,时钟信号可以在第一时钟状态和第二时钟状态之间振荡,以根据由时钟状态提供的定时使SSE的操作同步。 SSEs具有自我纠正机制,可防止辐射诱发的软错误。 SSE可以设置在TRSS机器的管线电路中,以接收和存储由管线电路内的组合电路产生的位信号的位状态。
    • 9. 发明授权
    • Circuit devices and methods having adjustable transistor body bias
    • 具有可调节晶体管体偏置的电路器件和方法
    • US08995204B2
    • 2015-03-31
    • US13167625
    • 2011-06-23
    • Lawrence T. ClarkBruce McWilliamsRobert Rogenmoser
    • Lawrence T. ClarkBruce McWilliamsRobert Rogenmoser
    • G11C7/00G11C11/412
    • G11C11/412
    • Circuits, integrated circuits devices, and methods are disclosed that may include biasable transistors with screening regions positioned below a gate and separated from the gate by a semiconductor layer. Bias voltages can be applied to such screening regions to optimize multiple performance features, such as speed and current leakage. Particular embodiments can include biased sections coupled between a high power supply voltage and a low power supply voltage, each having biasable transistors. One or more generation circuits can generate multiple bias voltages. A bias control section can couple one of the different bias voltages to screening regions of biasable transistors to provide a minimum speed and lowest current leakage for such a minimum speed.
    • 公开了电路,集成电路器件和方法,其可以包括具有位于栅极下方的屏蔽区域并通过半导体层与栅极分离的可偏置晶体管。 偏置电压可以应用于这样的屏蔽区域以优化多个性能特征,例如速度和电流泄漏。 特定实施例可以包括耦合在高电源电压和低电源电压之间的偏置部分,每个具有可偏置晶体管。 一个或多个发电电路可以产生多个偏置电压。 偏置控制部分可以将不同偏置电压之一耦合到可偏置晶体管的屏蔽区域,以提供用于这种最小速度的最小速度和最小电流泄漏。