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    • 10. 发明申请
    • OPTOELECTRONIC DEVICES WITH MULTILAYERED STRUCTURES
    • 具有多层结构的光电器件
    • US20070225464A1
    • 2007-09-27
    • US11748195
    • 2007-05-14
    • Larry LewisKelly ChichakJames CellaJoseph Shiang
    • Larry LewisKelly ChichakJames CellaJoseph Shiang
    • C08G77/04C08L83/04
    • C08G77/58G02B1/043C08L83/04
    • Optoelectronic devices include polysiloxanes derived from hydrosilation of an organometallic compound of formula L2MZ, wherein L and Z are independently bidentate ligands; at least one of L and Z comprises alkenyl, alkenylaryl, alkenyloxy, alkenyloxyaryl, alkynyl, alkynylaryl, alkynyloxy, alkynyloxyaryl, substituted alkenyl, substituted alkenylaryl, substituted alkenyloxy, substituted alkenyloxyaryl, substituted alkynyl, substituted alkynylaryl, substituted alkynyloxy, substituted alkynyloxyaryl, acrylate, methacrylate, or a combination thereof; and M is Zr, Nb, Mo, Tc, Ru, Rh, Pd, Ag, Cd, Hf, Ta, W, Re, Os, Ir, Pt, Au, Hg, Ga, Ge, In, Sn, Sb, Tl, Pd, Bi, Po, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, or Lu.
    • 光电器件包括衍生自式L 2 MZ的有机金属化合物的硅氢化的聚硅氧烷,其中L和Z独立地是二齿配体; L和Z中的至少一个包括烯基,烯基芳基,烯氧基,烯基氧基芳基,炔基,炔基芳基,炔氧基,炔氧基芳基,取代的烯基,取代的烯基芳基,取代的烯氧基,取代的烯基氧基芳基,取代的炔基,取代的炔基芳基,取代的炔氧基,取代的炔氧基芳基,丙烯酸酯, 甲基丙烯酸酯或其组合; 并且M是Zr,Nb,Mo,Tc,Ru,Rh,Pd,Ag,Cd,Hf,Ta,W,Re,Os,Ir,Pt,Au,Hg,Ga,Ge,In,Sn,Sb, ,Pd,Bi,Po,La,Ce,Pr,Nd,Pm,Sm,Eu,Gd,Tb,Dy,Ho,Er,Tm,Yb或Lu。