专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US6139759A Method of manufacturing silicided silicon microtips for scanning probe microscopy 失效
标题翻译：制造用于扫描探针显微镜的硅化硅微尖头的方法
公开(公告)号：US6139759A
公开(公告)日：2000-10-31
申请号：US256261
申请日：1999-02-23
申请人： Lambert A. Doezema , Philip V. Kaszuba , Leon Moszkowicz , James M. Never , James A. Slinkman
发明人： Lambert A. Doezema , Philip V. Kaszuba , Leon Moszkowicz , James M. Never , James A. Slinkman
IPC分类号： C25F3/08 , G01B7/34 , G01R31/02
CPC分类号： G01Q60/40 , B82Y35/00 , G01Q60/30 , Y10S977/879
摘要： A micromechanical sensor probe for a scanned-probe tool comprising a silicon probe and a coating of a refractory metal silicide formed at least on the tip of the probe. Titanium silicide is preferred. A method for manufacturing such a probe includes the steps of, first, providing a silicon cantilever and tip combination and, second, forming a refractory metal silicide on at least the tip of the cantilever and tip combination. This second step of the method includes removing any remnant oxide from the tip, stabilizing the cantilever and tip combination on a carrier, depositing a refractory metal on the silicon tip, heating the cantilever and tip combination in an ambient free of oxygen to react chemically the refractory metal on and the silicon of the tip, selectively etching any unreacted refractory metal from the tip, and annealing the cantilever and tip combination in an ambient free of oxygen. The method may also include, as a final step, removing any unreacted refractory metal from the tip.
摘要翻译：一种用于扫描探针工具的微机械传感器探针，其包括硅探针和至少形成在探针尖端上的难熔金属硅化物的涂层。硅化钛是优选的。用于制造这种探针的方法包括以下步骤：首先提供硅悬臂和尖端组合，其次，在悬臂和尖端组合的至少尖端上形成难熔金属硅化物。该方法的第二步骤包括从尖端去除任何残余氧化物，将悬臂和尖端组合稳定在载体上，将难熔金属沉积在硅尖端上，在不含氧的环境中加热悬臂和尖端组合以化学反应难熔金属和尖端的硅，从尖端选择性地蚀刻任何未反应的难熔金属，并且在没有氧的环境中退火悬臂和尖端组合。作为最后的步骤，还可以包括从尖端去除任何未反应的难熔金属。

2. 发明授权

US06198300B1 Silicided silicon microtips for scanning probe microscopy 失效
标题翻译：硅化硅微尖头用于扫描探针显微镜
公开(公告)号：US06198300B1
公开(公告)日：2001-03-06
申请号：US09436122
申请日：1999-11-08
申请人： Lambert A. Doezema , Philip V. Kaszuba , Leon Moszkowicz , James M. Never , James A. Slinkman
发明人： Lambert A. Doezema , Philip V. Kaszuba , Leon Moszkowicz , James M. Never , James A. Slinkman
IPC分类号： G01R3102
CPC分类号： G01Q60/40 , G01Q60/30 , Y10S977/879
摘要： A micromechanical sensor probe for a scanned-probe tool includes a silicon cantilever and a silicon tip physically attached to the cantilever. The micromechanical sensor probe has a coating of a refractory metal silicide formed at least on the tip. Titanium silicide is preferred. The probe also has a layer of refractory metal nitride formed entirely over the refractory metal silicide.
摘要翻译：用于扫描探针工具的微机械传感器探针包括物理连接到悬臂的硅悬臂和硅尖端。微机械传感器探针具有至少形成在尖端上的难熔金属硅化物的涂层。硅化钛是优选的。该探针还具有完全覆盖在难熔金属硅化物上的难熔金属氮化物层。

3. 发明申请

US20080157077A1 Integrated Circuit and Methods of Measurement And Preparation of Measurement Structure 失效
标题翻译：集成电路和测量结构的制备方法
公开(公告)号：US20080157077A1
公开(公告)日：2008-07-03
申请号：US12044030
申请日：2008-03-07
申请人： G. W. Banke , Andrew Deering , Philip V. Kaszuba , Leon Moszkowicz , James Robert , James A. Slinkman
发明人： G. W. Banke , Andrew Deering , Philip V. Kaszuba , Leon Moszkowicz , James Robert , James A. Slinkman
IPC分类号： H01L21/66
CPC分类号： A61M1/0058 , A61M1/0084 , G01N1/32 , G01R31/2898
摘要： A method for measuring an integrated circuit (IC) structure by measuring an imprint of the structure, a method for preparing a test site for the above measuring, and IC so formed. The method for preparing the test site includes incrementally removing the structure from the substrate so as to reveal an imprint of the removed bottom surface of the structure in a top surface of the substrate. The imprint can then be imaged using an atomic force microscope (AFM). The image can be used to measure the bottom surface of the structure.
摘要翻译：通过测量结构的印记来测量集成电路（IC）结构的方法，制备用于上述测量的测试部位的方法和如此形成的IC。用于制备测试部位的方法包括从衬底逐渐去除结构，以便在衬底的顶表面中露出结构的去除的底表面的印记。然后可以使用原子力显微镜（AFM）对印记进行成像。该图像可用于测量结构的底面。

4. 发明授权

US07812347B2 Integrated circuit and methods of measurement and preparation of measurement structure 失效
标题翻译：集成电路及测量方法及测量结构的准备
公开(公告)号：US07812347B2
公开(公告)日：2010-10-12
申请号：US12044030
申请日：2008-03-07
申请人： George W. Banke, Jr. , Andrew Deering , Philip V. Kaszuba , Leon Moszkowicz , James Robert , James A. Slinkman
发明人： George W. Banke, Jr. , Andrew Deering , Philip V. Kaszuba , Leon Moszkowicz , James Robert , James A. Slinkman
IPC分类号： H01L23/58
CPC分类号： A61M1/0058 , A61M1/0084 , G01N1/32 , G01R31/2898
摘要： A method for measuring an integrated circuit (IC) structure by measuring an imprint of the structure, a method for preparing a test site for the above measuring, and IC so formed. The method for preparing the test site includes incrementally removing the structure from the substrate so as to reveal an imprint of the removed bottom surface of the structure in a top surface of the substrate. The imprint can then be imaged using an atomic force microscope (AFM). The image can be used to measure the bottom surface of the structure.
摘要翻译：通过测量结构的印记来测量集成电路（IC）结构的方法，制备用于上述测量的测试部位的方法和如此形成的IC。用于制备测试部位的方法包括从衬底逐渐去除结构，以便在衬底的顶表面中露出结构的去除的底表面的印记。然后可以使用原子力显微镜（AFM）对印记进行成像。该图像可用于测量结构的底面。

5. 发明授权

US07944550B2 System and method for detecting local mechanical stress in integreated devices 有权
标题翻译：用于检测集成设备中局部机械应力的系统和方法
公开(公告)号：US07944550B2
公开(公告)日：2011-05-17
申请号：US12039830
申请日：2008-02-29
申请人： Lloyd Bumm , Daminda Dahayanaka , Philip V. Kaszuba , Leon Moszkowicz , James A. Slinkman
发明人： Lloyd Bumm , Daminda Dahayanaka , Philip V. Kaszuba , Leon Moszkowicz , James A. Slinkman
IPC分类号： G01B11/16
CPC分类号： G01B21/32 , G01Q60/30
摘要： A method of detecting local mechanical stress in integrated devices is provided, the method comprising: enabling the detection of a photovoltage difference between a scan probe device and a surface portion of an integrated device, the scan probe device being configured to deflect in response to the photovoltage difference; measuring the deflection of the scan probe device in response to the photovoltage difference between the scan probe device and the surface portion of the integrated device; and calculating a local stress level within the integrated device by determining a local work function of the surface portion of the integrated device based upon the deflection of the scan probe device.
摘要翻译：提供了一种在集成器件中检测局部机械应力的方法，所述方法包括：使得能够检测扫描探针器件与集成器件的表面部分之间的光电压差，扫描探针器件被配置为响应于光电压差; 测量所述扫描探针装置响应于所述扫描探针装置与所述集成装置的所述表面部分之间的光电压差的偏转; 以及通过基于所述扫描探针装置的偏转来确定所述集成装置的所述表面部分的局部功函数来计算所述集成装置内的局部应力水平。

6. 发明授权

US07507591B2 Methods of measurement and preparation of measurement structure of integrated circuit 失效
标题翻译：集成电路测量结构测量方法
公开(公告)号：US07507591B2
公开(公告)日：2009-03-24
申请号：US11160086
申请日：2005-06-08
申请人： George W. Banke, Jr. , Andrew Deering , Philip V. Kaszuba , Leon Moszkowicz , James Robert , James A. Slinkman
发明人： George W. Banke, Jr. , Andrew Deering , Philip V. Kaszuba , Leon Moszkowicz , James Robert , James A. Slinkman
IPC分类号： H01L21/00 , G01M19/00
CPC分类号： A61M1/0058 , A61M1/0084 , G01N1/32 , G01R31/2898
摘要： A method for measuring an integrated circuit (IC) structure by measuring an imprint of the structure, a method for preparing a test site for the above measuring, and IC so formed. The method for preparing the test site includes incrementally removing the structure from the substrate so as to reveal an imprint of the removed bottom surface of the structure in a top surface of the substrate. The imprint can then be imaged using an atomic force microscope (AFM). The image can be used to measure the bottom surface of the structure.
摘要翻译：通过测量结构的印记来测量集成电路（IC）结构的方法，制备用于上述测量的测试部位的方法和如此形成的IC。用于制备测试部位的方法包括从衬底逐渐去除结构，以便在衬底的顶表面中露出结构的去除的底表面的印记。然后可以使用原子力显微镜（AFM）对印记进行成像。该图像可用于测量结构的底面。

7. 发明申请

US20090219508A1 SYSTEM AND METHOD FOR DETECTING LOCAL MECHANICAL STRESS IN INTEGREATED DEVICES 有权
标题翻译：用于检测集成设备中的局部机械应力的系统和方法
公开(公告)号：US20090219508A1
公开(公告)日：2009-09-03
申请号：US12039830
申请日：2008-02-29
申请人： Lloyd Bumm , Daminda Dahayanaka , Philip V. Kaszuba , Leon Moszkowicz , James A. Slinkman
发明人： Lloyd Bumm , Daminda Dahayanaka , Philip V. Kaszuba , Leon Moszkowicz , James A. Slinkman
IPC分类号： G01B11/16
CPC分类号： G01B21/32 , G01Q60/30
摘要： A method of detecting local mechanical stress in integrated devices is provided, the method comprising: enabling the detection of a photovoltage difference between a scan probe device and a surface portion of an integrated device, the scan probe device being configured to deflect in response to the photovoltage difference; measuring the deflection of the scan probe device in response to the photovoltage difference between the scan probe device and the surface portion of the integrated device; and calculating a local stress level within the integrated device by determining a local work function of the surface portion of the integrated device based upon the deflection of the scan probe device.
摘要翻译：提供了一种在集成器件中检测局部机械应力的方法，所述方法包括：使得能够检测扫描探针器件与集成器件的表面部分之间的光电压差，扫描探针器件被配置为响应于光电压差; 测量所述扫描探针装置响应于所述扫描探针装置与所述集成装置的所述表面部分之间的光电压差的偏转; 以及通过基于所述扫描探针装置的偏转来确定所述集成装置的所述表面部分的局部功函数来计算所述集成装置内的局部应力水平。

8. 发明授权

US07205237B2 Apparatus and method for selected site backside unlayering of si, GaAs, GaxAlyAszof SOI technologies for scanning probe microscopy and atomic force probing characterization 有权
标题翻译：用于扫描探针显微镜和原子力探测表征的si，GaAs，GaxAlyAszof SOI技术的选择位置背面分层的装置和方法
公开(公告)号：US07205237B2
公开(公告)日：2007-04-17
申请号：US11160667
申请日：2005-07-05
申请人： Andrew Deering , Terence L. Kane , Philip V. Kaszuba , Leon Moszkowicz , Carmelo F. Scrudato , Michael Tenney
发明人： Andrew Deering , Terence L. Kane , Philip V. Kaszuba , Leon Moszkowicz , Carmelo F. Scrudato , Michael Tenney
IPC分类号： H01L21/461 , C23F1/00
CPC分类号： H01J37/3056 , H01J2237/16 , H01J2237/31749
摘要： Apparatus for exposure and probing of features in a semiconductor workpiece includes a hollow concentrator for covering a portion of the workpiece connected by a gas conduit to a supply of etchant gas. A stage supports and positions the semiconductor workpiece. Control means moves the stage and the semiconductor workpiece to the series of positions sequentially. An energy beam source directs a focused energy beam through an aperture through the concentrator onto a region on the surface of the workpiece in the presence of the etchant gas. The control means moves the stage to a series of positions with respect to the concentrator and the energy beam to direct the energy beam in the presence of the etchant gas to expose a series of regions on the surface of the semiconductor workpiece positioned below the hollow interior space of the concentrator, sequentially.
摘要翻译：用于在半导体工件中曝光和探测特征的装置包括中空聚焦器，用于将通过气体导管连接的工件的一部分覆盖到蚀刻剂气体的供应。舞台支撑并定位半导体工件。控制装置依次将平台和半导体工件移动到一系列位置。在存在蚀刻剂气体的情况下，能量束源将聚焦能量束通过穿过浓缩器的孔引导到工件表面上的区域上。控制装置将台架相对于集中器和能量束移动到一系列位置，以在存在蚀刻剂气体的情况下引导能量束，以暴露位于中空内部的半导体工件表面上的一系列区域集中器的空间顺序。

9. 发明申请

US20070010097A1 APPARATUS AND METHOD FOR SELECTED SITE BACKSIDE UNLAYERING OF SILICON, GAAS, GAXALYASZ OF SOI TECHNOLOGIES FOR SCANNING PROBE MICROSCOPY AND ATOMIC FORCE PROBING CHARACTERIZATION 有权
标题翻译：用于扫描探针显微镜和原子力探测特征的SOI技术的硅，GAAS，GAXALYASZ的选择场所的背景设备和方法
公开(公告)号：US20070010097A1
公开(公告)日：2007-01-11
申请号：US11160667
申请日：2005-07-05
申请人： Andrew Deering , Terence Kane , Philip Kaszuba , Leon Moszkowicz , Carmelo Scrudato , Michael Tenney
发明人： Andrew Deering , Terence Kane , Philip Kaszuba , Leon Moszkowicz , Carmelo Scrudato , Michael Tenney
IPC分类号： H01L21/302
CPC分类号： H01J37/3056 , H01J2237/16 , H01J2237/31749
摘要： Apparatus for exposure and probing of features in a semiconductor workpiece includes a hollow concentrator for covering a portion of the workpiece connected by a gas conduit to a supply of etchant gas. A stage supports and positions the semiconductor workpiece. Control means moves the stage and the semiconductor workpiece to the series of positions sequentially. An energy beam source directs a focused energy beam through an aperture through the concentrator onto a region on the surface of the workpiece in the presence of the etchant gas. The control means moves the stage to a series of positions with respect to the concentrator and the energy beam to direct the energy beam in the presence of the etchant gas to expose a series of regions on the surface of the semiconductor workpiece positioned below the hollow interior space of the concentrator, sequentially.
摘要翻译：用于在半导体工件中曝光和探测特征的装置包括中空聚焦器，用于将通过气体导管连接的工件的一部分覆盖到蚀刻剂气体的供应。舞台支撑并定位半导体工件。控制装置依次将平台和半导体工件移动到一系列位置。在存在蚀刻剂气体的情况下，能量束源将聚焦能量束通过穿过浓缩器的孔引导到工件表面上的区域上。控制装置将台架相对于集中器和能量束移动到一系列位置，以在存在蚀刻剂气体的情况下引导能量束，以暴露位于中空内部的半导体工件表面上的一系列区域集中器的空间顺序。

10. 发明申请

US20050283335A1 INTEGRATED CIRCUIT AND METHODS OF MEASUREMENT AND PREPARATION OF MEASUREMENT STRUCTURE 失效
标题翻译：集成电路及其测量方法和测量结构的准备
公开(公告)号：US20050283335A1
公开(公告)日：2005-12-22
申请号：US11160086
申请日：2005-06-08
申请人： G. Banke , Andrew Deering , Philip Kaszuba , Leon Moszkowicz , James Robert , James Slinkman
发明人： G. Banke , Andrew Deering , Philip Kaszuba , Leon Moszkowicz , James Robert , James Slinkman
IPC分类号： A61M1/00 , G01N1/32 , G01Q30/04 , G01Q30/20 , G01Q60/00 , G01R31/28 , G06F19/00 , H01L21/66
CPC分类号： A61M1/0058 , A61M1/0084 , G01N1/32 , G01R31/2898
摘要： A method for measuring an integrated circuit (IC) structure by measuring an imprint of the structure, a method for preparing a test site for the above measuring, and IC so formed. The method for preparing the test site includes incrementally removing the structure from the substrate so as to reveal an imprint of the removed bottom surface of the structure in a top surface of the substrate. The imprint can then be imaged using an atomic force microscope (AFM). The image can be used to measure the bottom surface of the structure.
摘要翻译：通过测量结构的印记来测量集成电路（IC）结构的方法，制备用于上述测量的测试部位的方法和如此形成的IC。用于制备测试部位的方法包括从衬底逐渐去除结构，以便在衬底的顶表面中露出结构的去除的底表面的印记。然后可以使用原子力显微镜（AFM）对印记进行成像。该图像可用于测量结构的底面。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式