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1. 发明申请

US20170321324A1 SUBSTRATE PEDESTAL MODULE INCLUDING BACKSIDE GAS DELIVERY TUBE AND METHOD OF MAKING 审中-公开
公开(公告)号：US20170321324A1
公开(公告)日：2017-11-09
申请号：US15662553
申请日：2017-07-28
申请人： Lam Research Corporation
发明人： Troy Alan Gomm , Nick Ray Linebarger, JR.
IPC分类号： C23C16/458 , H01L21/687 , H01L21/67 , B32B37/10 , C23C16/52 , C23C16/505 , H01L21/683
CPC分类号： C23C16/4586 , B32B37/1018 , B32B2457/00 , C23C16/4581 , C23C16/505 , C23C16/52 , H01L21/67103 , H01L21/6831 , H01L21/68757 , H01L21/68785 , H01L21/68792
摘要： A semiconductor substrate processing apparatus includes a vacuum chamber having a processing zone in which a semiconductor substrate may be processed, a process gas source in fluid communication with the vacuum chamber for supplying a process gas into the vacuum chamber, a showerhead module through which process gas from the process gas source is supplied to the processing zone of the vacuum chamber, and a substrate pedestal module. The substrate pedestal module includes a platen made of ceramic material having an upper surface configured to support a semiconductor substrate thereon during processing, a stem made of ceramic material having an upper stem flange that supports the platen, and a backside gas tube made of ceramic material that is located in an interior of the stem. The backside gas tube includes an upper gas tube flange that is located between a lower surface of the platen and an upper surface of the upper stem flange wherein the backside gas tube is in fluid communication with at least one backside gas passage of the platen and the backside gas tube is configured to supply a backside gas to a region below a lower surface of a semiconductor substrate that is to be supported on the upper surface of the platen during processing.

2. 发明授权

US11817341B2 Electrostatic chuck for use in semiconductor processing 有权
公开(公告)号：US11817341B2
公开(公告)日：2023-11-14
申请号：US17652243
申请日：2022-02-23
申请人： Lam Research Corporation
发明人： Troy Alan Gomm
IPC分类号： H01L21/683 , H01J37/32 , C23C16/46 , C23C16/509 , C23C16/458
CPC分类号： H01L21/6833 , C23C16/4586 , C23C16/46 , C23C16/509 , H01J37/32532 , H01J37/32541 , H01J37/32568 , H01J37/32697 , H01J37/32715
摘要： A semiconductor substrate processing apparatus includes a vacuum chamber having a processing zone in which a semiconductor substrate may be processed, a process gas source in fluid communication with the vacuum chamber for supplying a process gas into the vacuum chamber, a showerhead module through which process gas from the process gas source is supplied to the processing zone of the vacuum chamber, and a substrate pedestal module. The substrate pedestal module includes a pedestal made of ceramic material having an upper surface configured to support a semiconductor substrate thereon during processing, a stem made of ceramic material, and coplanar electrodes embedded in the platen, the electrodes including an outer RF electrode and inner electrostatic clamping electrodes, the outer RF electrode including a ring-shaped electrode and a radially extending lead extending from the ring-shaped electrode to a central portion of the platen, wherein the ceramic material of the platen and the electrodes comprise a unitary body made in a single sintering step.

3. 发明授权

US11634817B2 Substrate pedestal including backside gas-delivery tube 有权
公开(公告)号：US11634817B2
公开(公告)日：2023-04-25
申请号：US16863835
申请日：2020-04-30
申请人： Lam Research Corporation
发明人： Troy Alan Gomm , Nick Ray Linebarger, Jr.
IPC分类号： C23C16/52 , H01L21/687 , C23C16/458 , C23C16/505 , H01L21/67 , H01L21/683 , B32B37/10 , H01J37/32
摘要： In various examples, the disclosed subject matter includes a substrate pedestal that includes a platen formed from a ceramic material and having an upper surface to support a substrate during processing. A stem, formed from a ceramic material, has an upper-stem flange upon which the platen is mechanically coupled. The stem has an interior portion. A backside gas-delivery tube, formed from a ceramic material, is located in the interior portion of the stem. The backside gas-delivery tube includes an upper gas-tube flange that is located between a lower surface of the platen and an upper surface of the upper-stem flange. The backside gas-delivery tube is in fluid communication with at least one backside-gas passage of the platen and is arranged to supply a backside gas to a region below a lower surface of the substrate during processing. Other examples of apparatuses and methods of making and using the apparatuses are included.

4. 发明授权

US09738975B2 Substrate pedestal module including backside gas delivery tube and method of making 有权
公开(公告)号：US09738975B2
公开(公告)日：2017-08-22
申请号：US14710132
申请日：2015-05-12
申请人： Lam Research Corporation
发明人： Troy Alan Gomm , Nick Ray Linebarger, Jr.
IPC分类号： H01L21/00 , C23C16/458 , C23C16/505 , C23C16/52 , H01L21/687 , H01L21/67 , H01L21/683 , B32B37/10
CPC分类号： C23C16/4586 , B32B37/1018 , B32B2457/00 , C23C16/4581 , C23C16/505 , C23C16/52 , H01L21/67103 , H01L21/6831 , H01L21/68757 , H01L21/68785 , H01L21/68792
摘要： A semiconductor substrate processing apparatus includes a vacuum chamber having a processing zone in which a semiconductor substrate may be processed, a process gas source in fluid communication with the vacuum chamber for supplying a process gas into the vacuum chamber, a showerhead module through which process gas from the process gas source is supplied to the processing zone of the vacuum chamber, and a substrate pedestal module. The substrate pedestal module includes a platen made of ceramic material having an upper surface configured to support a semiconductor substrate thereon during processing, a stem made of ceramic material having an upper stem flange that supports the platen, and a backside gas tube made of ceramic material that is located in an interior of the stem. The backside gas tube includes an upper gas tube flange that is located between a lower surface of the platen and an upper surface of the upper stem flange wherein the backside gas tube is in fluid communication with at least one backside gas passage of the platen and the backside gas tube is configured to supply a backside gas to a region below a lower surface of a semiconductor substrate that is to be supported on the upper surface of the platen during processing.

5. 发明申请

US20160336213A1 HIGH TEMPERATURE SUBSTRATE PEDESTAL MODULE AND COMPONENTS THEREOF 审中-公开
标题翻译：高温基板模块及其组件
公开(公告)号：US20160336213A1
公开(公告)日：2016-11-17
申请号：US14710151
申请日：2015-05-12
申请人： Lam Research Corporation
发明人： Troy Alan Gomm , Timothy Thomas
IPC分类号： H01L21/687 , H01L21/285 , H01J37/32 , C23C16/505 , C23C16/458 , H01L21/02 , C23C16/455
CPC分类号： H01L21/68785 , C23C16/4409 , C23C16/4586 , C23C16/509 , H01J37/32082 , H01J37/32715 , H01J37/32724 , H01L21/02271 , H01L21/02274 , H01L21/0228 , H01L21/67103 , H01L21/67126 , H01L21/6831 , H01L21/68757 , H01L21/68792
摘要： A semiconductor substrate processing apparatus comprises a vacuum chamber in which a semiconductor substrate may be processed, a showerhead module through which process gas from a process gas source is supplied to a processing zone of the vacuum chamber, and a substrate pedestal module. The substrate pedestal module includes a platen, a stem having a side wall defining a cylindrical interior region thereof, a lower surface, and an upper end that supports the platen, and an adapter having a side wall defining a cylindrical interior region thereof and an upper surface that supports the stem. The lower surface of the stem includes a gas inlet in fluid communication with a respective gas passage located in the side wall of the stem and a gas outlet located in an annular gas channel in the upper surface of the adapter. The upper surface of the adapter includes an inner groove located radially inward of the gas outlet and an outer groove located radially outward of the inner groove. The inner groove and the outer groove have respective O-rings therein so as to form a vacuum seals during processing. The platen includes at least one platen gas passage in fluid communication with a respective gas passage in the side wall of the stem through which backside gas can be supplied to a region below a semiconductor substrate when supported on the upper surface of the platen during processing.
摘要翻译：半导体基板处理装置包括可以处理半导体基板的真空室，将来自处理气体源的处理气体供给到真空室的处理区域的喷淋头模块以及基板基座模块。基板基座模块包括压板，具有限定其圆柱形内部区域的侧壁的杆，下表面和支撑压板的上端，以及具有限定其圆柱形内部区域的侧壁和上部表面支撑茎。杆的下表面包括与位于杆的侧壁中的相应气体通道流体连通的气体入口和位于适配器的上表面中的环形气体通道中的气体出口。适配器的上表面包括位于气体出口径向内侧的内槽和位于内槽径向外侧的外槽。内槽和外槽在其中具有相应的O形环，以便在加工期间形成真空密封。压盘包括至少一个压板气体通道，其与杆的侧壁中的相应气体通道流体连通，当在加工期间被支撑在压板的上表面上时，背面气体可以被供给到半导体衬底下方的区域。

6. 发明申请

US20160333475A1 SUBSTRATE PEDESTAL MODULE INCLUDING BACKSIDE GAS DELIVERY TUBE AND METHOD OF MAKING 有权
标题翻译：底板包括背气管输送管和其制造方法
公开(公告)号：US20160333475A1
公开(公告)日：2016-11-17
申请号：US14710132
申请日：2015-05-12
申请人： Lam Research Corporation
发明人： Troy Alan Gomm , Nick Ray Linebarger, JR.
IPC分类号： C23C16/458 , C23C16/455 , B32B37/10 , H01L21/687 , B32B37/16 , C23C16/505 , C23C16/52
CPC分类号： C23C16/4586 , B32B37/1018 , B32B2457/00 , C23C16/4581 , C23C16/505 , C23C16/52 , H01L21/67103 , H01L21/6831 , H01L21/68757 , H01L21/68785 , H01L21/68792
摘要： A semiconductor substrate processing apparatus includes a vacuum chamber having a processing zone in which a semiconductor substrate may be processed, a process gas source in fluid communication with the vacuum chamber for supplying a process gas into the vacuum chamber, a showerhead module through which process gas from the process gas source is supplied to the processing zone of the vacuum chamber, and a substrate pedestal module. The substrate pedestal module includes a platen made of ceramic material having an upper surface configured to support a semiconductor substrate thereon during processing, a stem made of ceramic material having an upper stem flange that supports the platen, and a backside gas tube made of ceramic material that is located in an interior of the stem. The backside gas tube includes an upper gas tube flange that is located between a lower surface of the platen and an upper surface of the upper stem flange wherein the backside gas tube is in fluid communication with at least one backside gas passage of the platen and the backside gas tube is configured to supply a backside gas to a region below a lower surface of a semiconductor substrate that is to be supported on the upper surface of the platen during processing.
摘要翻译：一种半导体衬底处理装置，包括具有可处理半导体衬底的处理区域的真空室，与真空室流体连通以将处理气体供应到真空室中的处理气体源，喷头模块，其中处理气体从处理气体源被供给到真空室的处理区域，以及基板基座模块。衬底基座模块包括由陶瓷材料制成的压板，其具有在加工期间被配置为在其上支撑半导体衬底的上表面，由陶瓷材料制成的杆，其具有支撑压板的上杆法兰和由陶瓷材料制成的背侧气体管位于茎的内部。背侧气体管包括位于压板的下表面和上杆凸缘的上表面之间的上气体管凸缘，其中后侧气体管与压板的至少一个后侧气体通道流体连通，后侧气体管构造成在加工过程中将背面气体供给到待支撑在压板上表面上的半导体基板的下表面下方的区域。

7. 发明公开

US20230220549A1 SUBSTRATE PEDESTAL INCLUDING BACKSIDE GAS-DELIVERY TUBE 审中-公开
公开(公告)号：US20230220549A1
公开(公告)日：2023-07-13
申请号：US18123153
申请日：2023-03-17
申请人： Lam Research Corporation
发明人： Troy Alan Gomm , Nick Ray Linebarger, JR.
IPC分类号： C23C16/458 , C23C16/505 , B32B37/10 , H01L21/67 , H01L21/687 , H01L21/683 , C23C16/52 , H01J37/32
CPC分类号： C23C16/4586 , C23C16/505 , B32B37/1018 , C23C16/4581 , H01L21/67103 , H01L21/68785 , H01L21/68792 , H01L21/6831 , H01L21/68757 , C23C16/52 , H01J37/32577 , B32B2457/00
摘要： A semiconductor substrate processing apparatus includes a vacuum chamber having a processing zone in which a semiconductor substrate may be processed, a process gas source in fluid communication with the vacuum chamber for supplying a process gas into the vacuum chamber, a showerhead module through which process gas from the process gas source is supplied to the processing zone of the vacuum chamber, and a substrate pedestal module. The substrate pedestal module includes a platen made of ceramic material having an upper surface configured to support a semiconductor substrate thereon during processing, a stem made of ceramic material having an upper stem flange that supports the platen, and a backside gas tube made of ceramic material that is located in an interior of the stem. The backside gas tube includes an upper gas tube flange that is located between a lower surface of the platen and an upper surface of the upper stem flange wherein the backside gas tube is in fluid communication with at least one backside gas passage of the platen and the backside gas tube is configured to supply a backside gas to a region below a lower surface of a semiconductor substrate that is to be supported on the upper surface of the platen during processing.

8. 发明授权

US11289355B2 Electrostatic chuck for use in semiconductor processing 有权
公开(公告)号：US11289355B2
公开(公告)日：2022-03-29
申请号：US15612423
申请日：2017-06-02
申请人： LAM RESEARCH CORPORATION
发明人： Troy Alan Gomm
IPC分类号： H01L21/683 , H01J37/32 , C23C16/509 , C23C16/458 , C23C16/46
摘要： A semiconductor substrate processing apparatus includes a vacuum chamber having a processing zone in which a semiconductor substrate may be processed, a process gas source in fluid communication with the vacuum chamber for supplying a process gas into the vacuum chamber, a showerhead module through which process gas from the process gas source is supplied to the processing zone of the vacuum chamber, and a substrate pedestal module. The substrate pedestal module includes a pedestal made of ceramic material having an upper surface configured to support a semiconductor substrate thereon during processing, a stem made of ceramic material, and coplanar electrodes embedded in the platen, the electrodes including an outer RF electrode and inner electrostatic clamping electrodes, the outer RF electrode including a ring-shaped electrode and a radially extending lead extending from the ring-shaped electrode to a central portion of the platen, wherein the ceramic material of the platen and the electrodes comprise a unitary body made in a single sintering step.

9. 发明申请

US20200325578A1 SUBSTRATE PEDESTAL INCLUDING BACKSIDE GAS-DELIVERY TUBE 审中-公开
公开(公告)号：US20200325578A1
公开(公告)日：2020-10-15
申请号：US16863835
申请日：2020-04-30
申请人： Lam Research Corporation
发明人： Troy Alan Gomm , Nick Ray Linebarger, JR.
IPC分类号： C23C16/458 , C23C16/505 , C23C16/52 , H01L21/687 , H01L21/67 , H01L21/683 , B32B37/10
摘要： In various examples, the disclosed subject matter includes a substrate pedestal that includes a platen formed from a ceramic material and having an upper surface to support a substrate during processing. A stem, formed from a ceramic material, has an upper-stem flange upon which the platen is mechanically coupled. The stem has an interior portion. A backside gas-delivery tube, formed from a ceramic material, is located in the interior portion of the stem. The backside gas-delivery tube includes an upper gas-tube flange that is located between a lower surface of the platen and an upper surface of the upper-stem flange. The backside gas-delivery tube is in fluid communication with at least one backside-gas passage of the platen and is arranged to supply a backside gas to a region below a lower surface of the substrate during processing. Other examples of apparatuses and methods of making and using the apparatuses are included.

10. 发明授权

US10655225B2 Substrate pedestal module including backside gas delivery tube and method of making 有权
公开(公告)号：US10655225B2
公开(公告)日：2020-05-19
申请号：US15662553
申请日：2017-07-28
申请人： Lam Research Corporation
发明人： Troy Alan Gomm , Nick Ray Linebarger, Jr.
IPC分类号： C23C16/458 , C23C16/505 , H01L21/687 , H01L21/67 , H01L21/683 , C23C16/52 , B32B37/10
摘要： A semiconductor substrate processing apparatus includes a vacuum chamber having a processing zone in which a semiconductor substrate may be processed, a process gas source in fluid communication with the vacuum chamber for supplying a process gas into the vacuum chamber, a showerhead module through which process gas from the process gas source is supplied to the processing zone of the vacuum chamber, and a substrate pedestal module. The substrate pedestal module includes a platen made of ceramic material having an upper surface configured to support a semiconductor substrate thereon during processing, a stem made of ceramic material having an upper stem flange that supports the platen, and a backside gas tube made of ceramic material that is located in an interior of the stem. The backside gas tube includes an upper gas tube flange that is located between a lower surface of the platen and an upper surface of the upper stem flange wherein the backside gas tube is in fluid communication with at least one backside gas passage of the platen and the backside gas tube is configured to supply a backside gas to a region below a lower surface of a semiconductor substrate that is to be supported on the upper surface of the platen during processing.

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