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1. 发明申请

US20160225632A1 METAL DOPING OF AMORPHOUS CARBON AND SILICON FILMS USED AS HARDMASKS IN SUBSTRATE PROCESSING SYSTEMS 有权
标题翻译：在基板处理系统中用作非晶态碳和硅膜的金属掺杂
公开(公告)号：US20160225632A1
公开(公告)日：2016-08-04
申请号：US14612750
申请日：2015-02-03
申请人： LAM RESEARCH CORPORATION
发明人： Fayaz Shaikh , Sirish Reddy , Alice Hollister
IPC分类号： H01L21/308 , C23C16/458 , H01L21/3065 , C23C16/50 , H01L21/02 , H01J37/32 , C23C16/52
CPC分类号： C23C16/458 , C23C16/24 , C23C16/26 , C23C16/50 , C23C16/52 , H01J37/32082 , H01J37/32449 , H01L21/02115 , H01L21/02274 , H01L21/033 , H01L21/32055
摘要： Systems and methods for depositing a metal-doped amorphous carbon hardmask film or a metal-doped amorphous silicon hardmask film includes arranging a substrate in a processing chamber; supplying a carrier gas to the processing chamber; supplying a hydrocarbon precursor gas or a silicon precursor gas to the processing chamber, respectively; supplying a metal-based precursor gas to the processing chamber; one of creating or supplying plasma in the processing chamber; and depositing a metal-doped amorphous carbon hardmask film or a metal-doped amorphous silicon hardmask film on the substrate, respectively.
摘要翻译：用于沉积金属掺杂的无定形碳硬掩模薄膜或金属掺杂的非晶硅硬掩模薄膜的系统和方法包括将基底布置在处理腔中; 向所述处理室供应载气; 分别向处理室供应烃前体气体或硅前体气体; 向处理室供应金属前体气体; 在处理室中产生或供应等离子体之一; 以及分别在衬底上沉积金属掺杂的无定形碳硬掩模膜或金属掺杂的非晶硅硬掩模膜。

2. 发明授权

US09520295B2 Metal doping of amorphous carbon and silicon films used as hardmasks in substrate processing systems 有权
标题翻译：在基板处理系统中用作硬掩模的无定形碳和硅膜的金属掺杂
公开(公告)号：US09520295B2
公开(公告)日：2016-12-13
申请号：US14612750
申请日：2015-02-03
申请人： LAM RESEARCH CORPORATION
发明人： Fayaz Shaikh , Sirish Reddy , Alice Hollister
IPC分类号： H01L21/308 , H01J37/32 , C23C16/458 , C23C16/52 , C23C16/50 , H01L21/02 , H01L21/3065
CPC分类号： C23C16/458 , C23C16/24 , C23C16/26 , C23C16/50 , C23C16/52 , H01J37/32082 , H01J37/32449 , H01L21/02115 , H01L21/02274 , H01L21/033 , H01L21/32055
摘要： Systems and methods for depositing a metal-doped amorphous carbon hardmask film or a metal-doped amorphous silicon hardmask film includes arranging a substrate in a processing chamber; supplying a carrier gas to the processing chamber; supplying a hydrocarbon precursor gas or a silicon precursor gas to the processing chamber, respectively; supplying a metal-based precursor gas to the processing chamber; one of creating or supplying plasma in the processing chamber; and depositing a metal-doped amorphous carbon hardmask film or a metal-doped amorphous silicon hardmask film on the substrate, respectively.
摘要翻译：用于沉积金属掺杂的无定形碳硬掩模薄膜或金属掺杂的非晶硅硬掩模薄膜的系统和方法包括将基底布置在处理腔中; 向所述处理室供应载气; 分别向处理室供应烃前体气体或硅前体气体; 向处理室供应金属前体气体; 在处理室中产生或供应等离子体之一; 以及分别在衬底上沉积金属掺杂的无定形碳硬掩模膜或金属掺杂的非晶硅硬掩模膜。

3. 发明授权

US09337068B2 Oxygen-containing ceramic hard masks and associated wet-cleans 有权
标题翻译：含氧陶瓷硬面罩和相关的湿法清洁
公开(公告)号：US09337068B2
公开(公告)日：2016-05-10
申请号：US14105026
申请日：2013-12-12
申请人： Lam Research Corporation
发明人： George Andrew Antonelli , Alice Hollister , Sirish Reddy
IPC分类号： H01L21/31 , H01L21/67 , H01L21/311 , H01L21/02 , H01L21/3213 , C23C16/30 , H01L21/768
CPC分类号： H01L21/67207 , C23C16/30 , H01L21/02112 , H01L21/02274 , H01L21/31111 , H01L21/31144 , H01L21/32139 , H01L21/67259 , H01L21/76811 , H01L21/76813
摘要： A method of forming an oxygen-containing ceramic hard mask film on a semiconductor substrate involves receiving a semiconductor substrate in a plasma-enhanced chemical vapor deposition (PECVD) process chamber and depositing forming by PEVCD on the substrate an oxygen-containing ceramic hard mask film, the film being etch selective to low-k dielectric and copper, resistant to plasma dry-etch and removable by wet-etch. The method may further involve removing the oxygen-containing ceramic hard mask film from the substrate with a wet etch. Corresponding films and apparatus are also provided.
摘要翻译：在半导体衬底上形成含氧陶瓷硬掩模膜的方法包括在等离子体增强化学气相沉积（PECVD）处理室中接收半导体衬底，并通过PEVCD在衬底上沉积含氧陶瓷硬掩模膜，该膜对低k电介质和铜进行蚀刻选择性，耐等离子体干蚀刻和通过湿蚀刻可去除。该方法可以进一步包括用湿法蚀刻从衬底去除含氧陶瓷硬掩模膜。还提供了相应的胶片和装置。

4. 发明申请

US20140175617A1 OXYGEN-CONTAINING CERAMIC HARD MASKS AND ASSOCIATED WET-CLEANS 有权
标题翻译：含氧的陶瓷硬掩模和相关的清洁剂
公开(公告)号：US20140175617A1
公开(公告)日：2014-06-26
申请号：US14105026
申请日：2013-12-12
申请人： Lam Research Corporation
发明人： George Andrew Antonelli , Alice Hollister , Sirish Reddy
IPC分类号： H01L21/316 , H01L21/67 , H01L21/311
CPC分类号： H01L21/67207 , C23C16/30 , H01L21/02112 , H01L21/02274 , H01L21/31111 , H01L21/31144 , H01L21/32139 , H01L21/67259 , H01L21/76811 , H01L21/76813
摘要： A method of forming an oxygen-containing ceramic hard mask film on a semiconductor substrate involves receiving a semiconductor substrate in a plasma-enhanced chemical vapor deposition (PECVD) process chamber and depositing forming by PEVCD on the substrate an oxygen-containing ceramic hard mask film, the film being etch selective to low-k dielectric and copper, resistant to plasma dry-etch and removable by wet-etch. The method may further involve removing the oxygen-containing ceramic hard mask film from the substrate with a wet etch. Corresponding films and apparatus are also provided.
摘要翻译：在半导体衬底上形成含氧陶瓷硬掩模膜的方法包括在等离子体增强化学气相沉积（PECVD）处理室中接收半导体衬底，并通过PEVCD在衬底上沉积含氧陶瓷硬掩模膜，该膜对低k电介质和铜进行蚀刻选择性，耐等离子体干蚀刻和通过湿蚀刻可去除。该方法可以进一步包括用湿法蚀刻从衬底去除含氧陶瓷硬掩模膜。还提供了相应的胶片和装置。

5. 发明授权

US10242848B2 Carrier ring structure and chamber systems including the same 有权
公开(公告)号：US10242848B2
公开(公告)日：2019-03-26
申请号：US14568608
申请日：2014-12-12
申请人： Lam Research Corporation
发明人： Eli Jeon , Nick Ray Linebarger, Jr. , Sirish Reddy , Alice Hollister , Rungthiwa Methaapanon
IPC分类号： H01L21/67 , H01L21/687 , H01L21/683 , C23C14/50 , C23C16/452 , H01J37/32 , H01L21/285 , C23C16/458 , C23C16/455 , H01L21/02 , C23C16/52
摘要： A carrier ring for use in a chamber implemented for depositing films and chambers that use the carrier ring are provided. The carrier ring has an annular disk shape with an outer edge side and a wafer edge side. The carrier ring has a top carrier ring surface that extends between the outer edge side to the wafer edge side. The wafer edge side includes a lower carrier ring surface that is lower than the top carrier ring surface. The wafer edge side also includes a plurality of contact support structures. Each contact support structure is located at an edge of the lower carrier ring surface and has a height that is between the lower carrier ring surface and the top carrier ring surface, and the contact support structure has tapered edges and corners. A step is defined between the top carrier ring surface and the lower carrier ring surface, such that a top facing edge is disposed at a top of the step and a lower inner edge is disposed at the bottom of the step. Each of the top facing edge and the lower inner edge have a rounded non-sharp edge and a top of each of the contact support structures is configured for contact with a bottom edge surface of a wafer for lifting and lowering and moving the wafer.

6. 发明申请

US20160172165A1 Carrier Ring Structure and Chamber Systems Including the Same 审中-公开
标题翻译：载体环结构和包括其的室系统
公开(公告)号：US20160172165A1
公开(公告)日：2016-06-16
申请号：US14568608
申请日：2014-12-12
申请人： Lam Research Corporation
发明人： Eli Jeon , Nick Ray Linebarger, JR. , Sirish Reddy , Alice Hollister , Rungthiwa Methaapanon
IPC分类号： H01J37/32
CPC分类号： H01J37/32715 , C23C16/45544 , C23C16/458 , C23C16/52 , H01J37/32733 , H01L21/0228 , H01L21/0262 , H01L21/28556 , H01L21/67 , H01L21/68735
摘要： A carrier ring for use in a chamber implemented for depositing films and chambers that use the carrier ring are provided. The carrier ring has an annular disk shape with an outer edge side and a wafer edge side. The carrier ring has a top carrier ring surface that extends between the outer edge side to the wafer edge side. The wafer edge side includes a lower carrier ring surface that is lower than the top carrier ring surface. The wafer edge side also includes a plurality of contact support structures. Each contact support structure is located at an edge of the lower carrier ring surface and has a height that is between the lower carrier ring surface and the top carrier ring surface, and the contact support structure has tapered edges and corners. A step is defined between the top carrier ring surface and the lower carrier ring surface, such that a top facing edge is disposed at a top of the step and a lower inner edge is disposed at the bottom of the step. Each of the top facing edge and the lower inner edge have a rounded non-sharp edge and a top of each of the contact support structures is configured for contact with a bottom edge surface of a wafer for lifting and lowering and moving the wafer.
摘要翻译：提供了一种在实施用于沉积使用该载体环的薄膜和室的腔室中的载体环。载体环具有外边缘侧和晶片边缘侧的环形盘形状。载体环具有在外边缘侧到晶片边缘侧之间延伸的顶部载体环表面。晶片边缘侧包括比顶部载体环表面低的下载体环表面。晶片边缘侧还包括多个接触支撑结构。每个接触支撑结构位于下载体环表面的边缘处，并且具有在下载体环表面和顶部载体环表面之间的高度，并且接触支撑结构具有渐缩的边缘和拐角。在顶部载体环表面和下部载体环表面之间限定了台阶，使得顶部面向边缘设置在台阶的顶部，下部内边缘设置在台阶的底部。每个顶面对边缘和下内边缘都具有圆形的非锋利边缘，并且每个接触支撑结构的顶部被配置为与用于提升和降低和移动晶片的晶片的底部边缘表面接触。

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