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1. 发明申请

US20210388492A1 REACTION CHAMBER COMPRISING A ROTATING ELEMENT FOR THE DEPOSITION OF A SEMICONDUCTOR MATERIAL 有权
公开(公告)号：US20210388492A1
公开(公告)日：2021-12-16
申请号：US17420557
申请日：2020-01-07
申请人： LPE S.P.A. , DENSO CORPORATION
发明人： Francesco Corea , Danilo Crippa , Maurilio Meschia , Yuichiro Tokuda
IPC分类号： C23C16/44
摘要： The reaction chamber (100) is designed for a reactor (100) for deposition of layers of semiconductor material on substrates; it comprises a tube (110) and an injector (20) and a holder (30); the tube (110) is made of quartz and has a cylindrical or prismatic shape and surrounds a reaction and deposition zone; the injector (20) is arranged to inject precursor gases into the reaction and deposition zone; the holder (30) is arranged to support a substrate in the reaction and deposition zone during deposition processes; graphite susceptor elements (10, 40, 50) are located inside the tube (110) for heating the reaction and deposition zone and components inside the reaction and deposition zone; an inductor system (60, 70) is located outside the tube (110) for providing energy to the susceptor elements (10, 40, 50) by electromagnetic induction; a rotating element (80) in the form of a cylindrical or prismatic tube is located inside the reaction and deposition zone and surrounds the injector (20).

2. 发明申请

US20220074046A1 REACTION CHAMBER FOR A DEPOSITION REACTOR WITH INTERSPACE AND LOWER CLOSING ELEMENT AND REACTOR 有权
公开(公告)号：US20220074046A1
公开(公告)日：2022-03-10
申请号：US17420540
申请日：2020-01-07
申请人： LPE S.P.A. , DENSO CORPORATION
发明人： Francesco Corea , Danilo Crippa , Maurilio Meschia , Silvio Preti , Yuichiro Tokuda
IPC分类号： C23C16/44
摘要： The reaction chamber (100) is used for a deposition reactor of layers of semiconductor material on substrates; it comprises a tube (110) made of quartz and having a cylindrical shape and adapted to be positioned in use so that its axis (111) is vertical; the tube (110) has a cylindrical inner interspace (112) which extends along the entire length of the tube (110) and which is adapted to accommodate a flowing liquid; the chamber (100) further comprises an annular closing element (120) made of quartz and fixed to a first lower end of the tube (110) so as to close the interspace (112) preventing the liquid from flowing out of the interspace at the bottom; at the top, the closing element (120) has an annular recess (122) facing the interspace (112) so that the flowing liquid can reach the recess (122) at the bottom; the chamber (100) further comprises a set of internal conduits (130) internal to the interspace (112), wherein said internal conduits (130) extend from the first lower region of the tube (110) till a second upper region of the tube (110) to facilitate circulation of the flowing liquid in the interspace (112).

3. 发明申请

US20220341058A1 TREATING ARRANGEMENT WITH LOADING/UNLOADING GROUP AND EPITAXIAL REACTOR 有权
公开(公告)号：US20220341058A1
公开(公告)日：2022-10-27
申请号：US17763915
申请日：2020-10-02
申请人： LPE S.p.A.
发明人： Silvio Preti , Francesco Corea
IPC分类号： C30B35/00 , C30B25/02 , C23C16/458 , B08B5/04 , H01L21/687
摘要： The treating arrangement (900) for an epitaxial reactor (1000) comprises: a reaction chamber (100) for treating substrates, a transfer chamber (200) adjacent to the reaction chamber (100), for transferring substrates placed over substrates support devices, a loading/unloading group (300) at least in part adjacent to the transfer chamber (200), arranged to contain a substrates support device with one or more substrates, a storage chamber (400) containing at least in part the loading/unloading group (300), having a first storage zone (410) for treated and/or untreated substrates and a second storage zone (420) for substrates support devices without any substrate, at least one external robot (500) for transferring treated substrates, untreated substrates and substrates support devices without any substrate between said storage chamber (400) and said loading/unloading group (300), at least one internal robot (600) for transferring substrates support devices with one or more substrates between said loading/unloading group (300) and said reaction chamber (100) via said transfer chamber (200); said loading/unloading group comprises a load-lock chamber (300A) and a preparation station (300B) associated with each other.

4. 发明申请

US20220333271A1 TREATING ARRANGEMENT WITH TRANSFER CHAMBER AND EPITAXIAL REACTOR 有权
公开(公告)号：US20220333271A1
公开(公告)日：2022-10-20
申请号：US17763890
申请日：2020-10-02
申请人： LPE S.p.A.
发明人： Silvio Preti , Francesco Corea
IPC分类号： C30B35/00 , H01L21/687 , H01L21/68 , H01L21/677 , C30B25/10
摘要： The treating arrangement (900) for an epitaxial reactor (1000) comprises: a reaction chamber (100) for treating substrates, a transfer chamber (200) adjacent to the reaction chamber (100), for transferring substrates placed over substrates support devices, a loading/unloading group (300) at least in part adjacent to the transfer chamber (200), arranged to contain a substrates support device with one or more substrates, a storage chamber (400) at least in part adjacent to the load-lock chamber (300), having a first storage zone (410) for treated and/or untreated substrates and a second storage zone (420) for substrates support devices without any substrate, at least one external robot (500) for transferring treated substrates, untreated substrates and substrates support devices without any substrate between said storage chamber (400) and said loading/unloading group (300), at least one internal robot (600) for transferring substrates support devices with one or more substrates between said loading/unloading group (300) and said reaction chamber (100) via said transfer chamber (200).

5. 发明申请

US20220074048A1 REACTION CHAMBER FOR AN EPITAXIAL REACTOR OF SEMICONDUCTOR MATERIAL WITH NON-UNIFORM LONGITUDINAL SECTION AND REACTOR 有权
公开(公告)号：US20220074048A1
公开(公告)日：2022-03-10
申请号：US17414763
申请日：2019-10-17
申请人： LPE S.P.A.
发明人： Silvio Preti , Francesco Corea , Maurilio Meschia
IPC分类号： C23C16/458
摘要： The reaction chamber (100A) is used for a reactor for the deposition of semiconductor material on a substrate (62); it extends in a longitudinal direction and comprises a reaction and deposition zone (10) which extends in the longitudinal direction; this zone (10) is defined by susceptor elements (21A, 21B, 21C, 22A, 22B, 31, 32) adapted to be heated by electromagnetic induction; a first susceptor element (21A, 21B, 21C, 22A, 22B) is opposite to a substrate support element (61) of the chamber and has a hole (20) which extends in the longitudinal direction along its whole length; the first susceptor element (21A, 21B, 21C, 22A, 22B) has a non-uniform cross section that depends on its longitudinal position.

6. 发明公开

US20240271319A1 REACTION CHAMBER WITH COVERING SYSTEM AND EPITAXIAL REACTOR 审中-公开
公开(公告)号：US20240271319A1
公开(公告)日：2024-08-15
申请号：US18567983
申请日：2022-06-07
申请人： LPE S.P.A.
发明人： Srinivas Yarlagadda , Silvio Preti , Francesco Corea , Stefano Polli
IPC分类号： C30B25/08 , C23C16/44 , C23C16/458 , C23C16/46 , C30B25/10 , C30B25/12
CPC分类号： C30B25/08 , C23C16/4401 , C23C16/4584 , C23C16/46 , C30B25/10 , C30B25/12
摘要： The reaction chamber (100) comprises a covering system (90) that is located within its cavity (101) and comprises at least one lower covering element (120) resting on a lower wall of the cavity, and an upper covering element (130) resting on the lower covering element (120); the lower covering element (120) and the upper covering element (130) define an insulated inner space to accommodate at least one substrate, and make four walls surrounding this inner space and are spaced apart from the cavity walls; the walls of the chamber (100) are typically made of quartz and the covering system (90) is typically made of quartz.

7. 发明申请

US20220333272A1 TREATING ARRANGEMENT WITH STORAGE CHAMBER AND EPITAXIAL REACTOR 有权
公开(公告)号：US20220333272A1
公开(公告)日：2022-10-20
申请号：US17763933
申请日：2020-10-02
申请人： LPE S.p.A.
发明人： Silvio Preti , Francesco Corea
IPC分类号： C30B35/00 , H01L21/687 , H01L21/68 , H01L21/677 , C30B25/16
摘要： The treating arrangement (900) for an epitaxial reactor (1000) comprises: a reaction chamber (100) for treating substrates, a transfer chamber (200) adjacent to the reaction chamber (100), for transferring substrates placed over substrates support devices, a loading/unloading group (300) at least in part adjacent to the transfer chamber (200), arranged to contain a substrates support device with one or more substrates, a loading/unloading chamber (400) at least in part adjacent to the loading/unloading group (300), having a first storage zone (410) for treated and/or untreated substrates and a second storage zone (420) for substrates support devices without any substrate, at least one external robot (500) for transferring treated substrates, untreated substrates and substrates support devices without any substrate between said loading/unloading chamber (400) and said loading/unloading group (300), at least one internal robot (600) for transferring substrates support devices with one or more substrates between said loading/unloading group (300) and said reaction chamber (100) via said transfer chamber (200); wherein said external robot (500) comprises an articulated arm (510) arranged to handle both treated substrates and untreated substrates as well as substrates support devices.

8. 发明授权

US10697087B2 Susceptor with supporting element 有权
公开(公告)号：US10697087B2
公开(公告)日：2020-06-30
申请号：US15080121
申请日：2016-03-24
申请人： LPE S.P.A.
发明人： Francesco Corea , Danilo Crippa , Laura Gobbo , Marco Mauceri , Vincenzo Ogliari , Franco Preti , Marco Puglisi , Carmelo Vecchio
IPC分类号： C30B25/12 , C23C16/458 , H01L21/687
摘要： The present invention mainly relates to a susceptor for a reactor for epitaxial growth, comprising: a disc-shaped body (90) having a first face and a second face, wherein the first face comprises at least one zone (99) adapted to receive a substrate (2000) to be subjected to epitaxial growth and at least one supporting element (91+97) for the substrate (2000), located at the zone (99); the supporting element (91+97) comprises a circular disc (91) with an edge (97) which is raised with respect to the disc; the zone (99) may be a bottom of a recess (99) or a top of a relief of the disc-shaped body (90); the disc-shaped body (90) is solid at least at the recess (99) or relief; the edge is accessible from a side of the susceptor for handling the supporting element.

9. 发明授权

US10392723B2 Reaction chamber for epitaxial growth with a loading/unloading device and reactor 有权
公开(公告)号：US10392723B2
公开(公告)日：2019-08-27
申请号：US15104482
申请日：2014-12-17
申请人： LPE S.P.A.
发明人： Francesco Corea , Danilo Crippa , Laura Gobbo , Marco Mauceri , Vincenzo Ogliari , Franco Preti , Marco Puglisi , Carmelo Vecchio
IPC分类号： H01L21/687 , C23C16/458 , H01L21/677 , C30B25/12 , C30B25/08 , C30B29/36
摘要： A reaction chamber of a reactor for epitaxial growth includes a wall (1) with a recess and a susceptor (7) comprising a body and a relief. The body is placed in said recess in a rotational manner with respect to said wall (1). The chamber includes a discoid supporting element (8), having a shape adapted to be laid stably on said relief, having a size such to protrude radially from said relief and adapted to support one or more substrates to be subjected to epitaxial growth. The chamber also includes a flat covering (91, 92) located over said wall (1) and a hole (10) at said discoid supporting element (8). The shape of said hole (10) corresponds to the shape of said discoid supporting element (8). The covering (92) has at least one hollow guide (11, 12) for the passage of a device (16) for loading/unloading said discoid supporting element (8), wherein said hollow guide (11, 12) extends from an edge of said covering (92) to said hole (10).

10. 发明授权

US10211085B2 Tool for manipulating substrates, manipulation method and epitaxial reactor 有权
公开(公告)号：US10211085B2
公开(公告)日：2019-02-19
申请号：US15385473
申请日：2016-12-20
申请人： LPE S.P.A.
发明人： Vincenzo Ogliari , Francesco Corea , Franco Preti
IPC分类号： H01L21/683 , B25J15/06 , C23C16/458 , C30B25/12
摘要： The tool (1) for manipulating substrates in an epitaxial reactor comprises an arm (2), a gripping disc (3) and a ball joint (4); said gripping disc (3) has a seat (5) on a lower face thereof for receiving a substrate (6) to be manipulated; said gripping disc (3) is mounted on the arm (2) through said ball joint (4) placed centrally with respect to said gripping disc (3); said gripping disc (3) is shaped so as to come into contact only with the upper edge of said substrate (6) to be manipulated; said gripping disc (3) has two degrees of freedom of rotational movement with respect to said arm (1) to allow adapting to the position of a substrate in a pocket of a susceptor of an epitaxial reactor.

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