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    • 1. 发明授权
    • Junction isolation for magnetic read sensor
    • 磁读取传感器的结隔离
    • US08530988B2
    • 2013-09-10
    • US12976748
    • 2010-12-22
    • Liubo HongGuangli Liu
    • Liubo HongGuangli Liu
    • H01L29/82
    • H01L43/12B82Y25/00G01R33/093G11B5/3912G11B5/3932G11B5/398
    • Embodiments generally relate to a magnetic read sensor and a method for its manufacture. A multi-layer insulating material may be used to cover both the first shield layer and also the sidewalls of the sensor structure in the magnetic read sensor. The first insulating layer of the multi-layer insulating material may be deposited by an ion beam sputtering process in a chamber that does not have any oxygen gas flowing into it so that oxygen diffusion into the sensor structure is reduced or eliminated. Then, a second insulating layer of the multi-layer insulating material may be deposited by atomic layer deposition such that the second insulating layer has a greater quality than the first insulating layer. The higher quality increases the breakdown voltage for the magnetic read sensor. Thus, the magnetic read sensor of the present invention has an effective insulating portion that increases the breakdown voltage without sensor damage.
    • 实施例通常涉及磁读取传感器及其制造方法。 多层绝缘材料可用于覆盖磁读取传感器中的第一屏蔽层以及传感器结构的侧壁。 多层绝缘材料的第一绝缘层可以通过离子束溅射工艺沉积在不具有任何氧气流入其中的腔室中,从而减少或消除了扩散到传感器结构中的氧气。 然后,可以通过原子层沉积来沉积多层绝缘材料的第二绝缘层,使得第二绝缘层具有比第一绝缘层更大的质量。 更高的质量增加了磁读取传感器的击穿电压。 因此,本发明的磁读取传感器具有有效的绝缘部分,其在没有传感器损坏的情况下增加击穿电压。
    • 2. 发明申请
    • JUNCTION ISOLATION FOR MAGNETIC READ SENSOR
    • 磁性读取传感器的连接隔离
    • US20120161264A1
    • 2012-06-28
    • US12976748
    • 2010-12-22
    • LIUBO HONGGuangli Liu
    • LIUBO HONGGuangli Liu
    • H01L29/82H01L21/02
    • H01L43/12B82Y25/00G01R33/093G11B5/3912G11B5/3932G11B5/398
    • Embodiments generally relate to a magnetic read sensor and a method for its manufacture. A multi-layer insulating material may be used to cover both the first shield layer and also the sidewalls of the sensor structure in the magnetic read sensor. The first insulating layer of the multi-layer insulating material may be deposited by an ion beam sputtering process in a chamber that does not have any oxygen gas flowing into it so that oxygen diffusion into the sensor structure is reduced or eliminated. Then, a second insulating layer of the multi-layer insulating material may be deposited by atomic layer deposition such that the second insulating layer has a greater quality than the first insulating layer. The higher quality increases the breakdown voltage for the magnetic read sensor. Thus, the magnetic read sensor of the present invention has an effective insulating portion that increases the breakdown voltage without sensor damage.
    • 实施例通常涉及磁读取传感器及其制造方法。 多层绝缘材料可用于覆盖磁读取传感器中的第一屏蔽层以及传感器结构的侧壁。 多层绝缘材料的第一绝缘层可以通过离子束溅射工艺沉积在不具有任何氧气流入其中的腔室中,从而减少或消除了扩散到传感器结构中的氧气。 然后,可以通过原子层沉积来沉积多层绝缘材料的第二绝缘层,使得第二绝缘层具有比第一绝缘层更大的质量。 更高的质量增加了磁读取传感器的击穿电压。 因此,本发明的磁读取传感器具有有效的绝缘部分,其在没有传感器损坏的情况下增加击穿电压。
    • 4. 发明授权
    • Magnetic bias structure for magnetoresistive sensor having a scissor structure
    • 具有剪刀结构的磁阻传感器的磁偏置结构
    • US08907666B2
    • 2014-12-09
    • US13251100
    • 2011-09-30
    • Quang LeSimon H. LiaoShuxia WangGuangli LiuYongchul Ahn
    • Quang LeSimon H. LiaoShuxia WangGuangli LiuYongchul Ahn
    • G01R33/02G01R33/00G01R33/09
    • G01R33/0011G01R33/0017G01R33/093
    • A scissor style magnetic sensor having a novel hard bias structure for improved magnetic biasing robustness. The sensor includes a sensor stack that includes first and second magnetic layers separated by a non-magnetic layer such as an electrically insulating barrier layer or an electrically conductive spacer layer. The first and second magnetic layers have magnetizations that are antiparallel coupled, but that are canted in a direction that is neither parallel with nor perpendicular to the air bearing surface by a magnetic bias structure. The magnetic bias structure includes a neck portion extending from the back edge of the sensor stack and having first and second sides that are aligned with first and second sides of the sensor stack. The bias structure also includes a tapered or wedged portion extending backward from the neck portion.
    • 具有改进的磁偏置鲁棒性的新型硬偏置结构的剪刀式磁传感器。 该传感器包括传感器堆叠,该传感器堆叠包括由诸如电绝缘阻挡层或导电隔离层之类的非磁性层分开的第一和第二磁性层。 第一和第二磁性层具有反平行耦合的磁化,但是通过磁偏置结构在不与空气轴承表面平行或垂直的方向上倾斜。 磁偏置结构包括从传感器堆叠的后边缘延伸的颈部,并且具有与传感器堆叠的第一和第二侧对准的第一和第二侧。 偏置结构还包括从颈部部分向后延伸的锥形或楔形部分。
    • 5. 发明申请
    • MAGNETIC BIAS STRUCTURE FOR MAGNETORESISTIVE SENSOR HAVING A SCISSOR STRUCTURE
    • 具有扫描结构的磁传感器的磁偏置结构
    • US20130082696A1
    • 2013-04-04
    • US13251100
    • 2011-09-30
    • Quang LeSimon H. LiaoShuxia WangGuangli LiuYongchul Ahn
    • Quang LeSimon H. LiaoShuxia WangGuangli LiuYongchul Ahn
    • G01R33/02C23F1/04
    • G01R33/0011G01R33/0017G01R33/093
    • A scissor style magnetic sensor having a novel hard bias structure for improved magnetic biasing robustness. The sensor includes a sensor stack that includes first and second magnetic layers separated by a non-magnetic layer such as an electrically insulating barrier layer or an electrically conductive spacer layer. The first and second magnetic layers have magnetizations that are antiparallel coupled, but that are canted in a direction that is neither parallel with nor perpendicular to the air bearing surface by a magnetic bias stricture. The magnetic bias structure includes a neck portion extending from the back edge of the sensor stack and having first and second sides that are aligned with first and second sides of the sensor stack. The bias structure also includes a tapered or wedged portion extending backward from the neck portion.
    • 具有改进的磁偏置鲁棒性的新型硬偏置结构的剪刀式磁传感器。 该传感器包括传感器堆叠,该传感器堆叠包括由诸如电绝缘阻挡层或导电隔离层之类的非磁性层分开的第一和第二磁性层。 第一和第二磁性层具有反平行耦合的磁化,但是通过磁偏置狭窄不能平行于或垂直于空气轴承表面的方向倾斜。 磁偏置结构包括从传感器堆叠的后边缘延伸的颈部,并且具有与传感器堆叠的第一和第二侧对准的第一和第二侧。 偏置结构还包括从颈部部分向后延伸的锥形或楔形部分。