专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US10760944B2 Hybrid flow metrology for improved chamber matching 有权
公开(公告)号：US10760944B2
公开(公告)日：2020-09-01
申请号：US16056980
申请日：2018-08-07
申请人： LAM RESEARCH CORPORATION
发明人： Evangelos T. Spyropoulos , Piyush Agarwal , James Leung , Seyed Hossein Hashemi Ghermezi , Iqbal Shareef
IPC分类号： G01F1/34 , G01F25/00
摘要： A gas flow metrology system for a substrate processing system includes N primary valves selectively flowing gas from N gas sources, respectively, where N is an integer. N mass flow controllers are connected to the N primary valves, respectively, to flow N gases from the N gas sources, respectively. N secondary valves selectively flow gas from the N mass flow controllers, respectively. A gas flow path connects the N secondary valves to a flow metrology system located remote from the N secondary valves, wherein the gas flow path includes a plurality of gas lines. A controller is configured to perform a hybrid flow metrology by selectively using a first flow metrology and a second flow metrology that is different from the first flow metrology to determine an actual flow rate for a selected gas at a desired flow rate from one of the N mass flow controllers.

2. 发明授权

US10128087B2 Configuration independent gas delivery system 有权
公开(公告)号：US10128087B2
公开(公告)日：2018-11-13
申请号：US14680244
申请日：2015-04-07
申请人： Lam Research Corporation
发明人： Mark Taskar , Iqbal Shareef
IPC分类号： H01J37/00 , H01J37/32 , B01F3/02 , B01F5/04
摘要： A gas delivery apparatus for supplying process gas to a processing chamber of a plasma processing apparatus includes a mixing manifold having a plurality of gas inlets on a surface thereof, the gas inlets being equally spaced from a center mixing point of the mixing manifold; and optionally a plurality of gas supplies in communication with the plurality of gas inlets on the surface of the mixing manifold. A method of supplying gas to a processing chamber of a plasma processing apparatus using such a gas delivery apparatus involves providing a plurality of gas supplies in communication with a plurality of gas inlets on a surface of a mixing manifold; flowing at least two different gases from the plurality of gas supplies to the mixing manifold to create a first mixed gas; and supplying the first mixed gas to a plasma processing chamber coupled downstream of the mixing manifold.

3. 发明授权

US09721763B2 Systems and methods for providing gases to a process chamber 有权
公开(公告)号：US09721763B2
公开(公告)日：2017-08-01
申请号：US14753738
申请日：2015-06-29
申请人： LAM RESEARCH CORPORATION
发明人： Iqbal Shareef , Mark Taskar , Evangelos Spyropoulos
IPC分类号： F16K11/16 , H01J37/32 , G05D11/13 , G05D7/06 , C23C16/455 , C23C16/513 , H01L21/67
CPC分类号： H01J37/32449 , C23C16/45561 , C23C16/513 , G05D7/06 , G05D7/0658 , G05D11/132 , H01J2237/332 , H01J2237/334 , H01L21/67069 , Y10T137/0324 , Y10T137/7722
摘要： A gas supply system for providing a plurality of process gases to a process chamber includes a plurality of mass flow controllers each arranged to receive a respective subset of the plurality of process gases. Each of the respective subsets includes more than one of the process gases, and at least one of the process gases is provided to more than one of the plurality of mass flow controllers. Respective valves are arranged upstream of each of the plurality of mass flow controllers to selectively provide the respective subsets to the mass flow controllers. A first quantity of the plurality of mass flow controllers is less than a total number of the plurality of process gases to be supplied to the process chamber. The first quantity is equal to a maximum number of the plurality of process gases to be used in the process chamber at any one time.

4. 发明申请

US20160111258A1 GAS SUPPLY DELIVERY ARRANGEMENT INCLUDING A GAS SPLITTER FOR TUNABLE GAS FLOW CONTROL 审中-公开
标题翻译：气体输送装置，包括用于气体流量控制的气体分离器
公开(公告)号：US20160111258A1
公开(公告)日：2016-04-21
申请号：US14886458
申请日：2015-10-19
申请人： Lam Research Corporation
发明人： Mark Taskar , Iqbal Shareef , Anthony Zemlock , Ryan Bise , Nathan Kugland
IPC分类号： H01J37/32 , H01L21/67 , C23C14/22 , C23C16/50 , C23C16/455
CPC分类号： H01J37/3244 , C23C14/22 , C23C16/45544 , C23C16/45561 , C23C16/45565 , C23C16/50 , C23C16/52 , H01J37/32009 , H01J37/32449 , H01L21/31116 , H01L21/67069
摘要： A gas supply delivery arrangement of a plasma processing system for processing a substrate with gases introduced through at least first, second, and third gas injection zones comprises process gas supply inlets and tuning gas inlets. A mixing manifold comprises gas sticks in fluid communication with a process gas supply and tuning gas sticks in fluid communication with a tuning gas supply. A first gas outlet delivers gas to the first gas injection zone, a second gas outlet delivers gas to the second gas injection zone, and a third gas outlet delivers gas to the third gas injection zone. A gas splitter is in fluid communication with the mixing manifold, and includes a first valve arrangement which splits mixed gas exiting the mixing manifold into a first mixed gas supplied to the first gas outlet and a second mixed gas supplied to the second, and/or third gas outlets.
摘要翻译：用于通过至少第一，第二和第三气体注入区域引入的气体处理衬底的等离子体处理系统的气体供应输送装置包括工艺气体供应入口和调节气体入口。混合歧管包括与工艺气体供应流体连通的气棒和与调节气体供应流体连通的调节气棒。第一气体出口将气体输送到第一气体注入区域，第二气体出口将气体输送到第二气体注入区域，而第三气体出口将气体输送到第三气体注入区域。气体分配器与混合歧管流体连通，并且包括第一阀装置，其将离开混合歧管的混合气体分解成供应到第一气体出口的第一混合气体和供应到第二气体出口的第二混合气体，和/或第三个出口。

5. 发明申请

US20150287572A1 MONOLITHIC CERAMIC COMPONENT OF GAS DELIVERY SYSTEM AND METHOD OF MAKING AND USE THEREOF 有权
标题翻译：气体输送系统的单晶陶瓷部件及其制造和使用方法
公开(公告)号：US20150287572A1
公开(公告)日：2015-10-08
申请号：US14676180
申请日：2015-04-01
申请人： Lam Research Corporation
发明人： John Daugherty , Iqbal Shareef , Mike Ingamells
IPC分类号： H01J37/32 , C04B35/64 , H01L21/306 , C23C16/513 , B28B1/00 , C04B35/66 , C23C16/455
CPC分类号： C04B35/622 , B28B1/001 , B32B18/00 , B33Y10/00 , B33Y30/00 , C04B35/00 , C04B35/01 , C04B35/111 , C04B35/14 , C04B35/46 , C04B35/486 , C04B35/50 , C04B35/515 , C04B35/563 , C04B35/565 , C04B35/581 , C04B35/584 , C04B35/64 , C04B35/66 , C23C16/45561 , C23C16/45563 , H01J37/3244
摘要： A method of making a monolithic ceramic component of a gas delivery system of a semiconductor substrate processing apparatus wherein the gas delivery system is configured to supply process gas to a gas distribution member disposed downstream thereof. The gas distribution member is configured to supply the process gas to a processing region of a vacuum chamber of the apparatus, wherein the processing region is disposed above an upper surface of a semiconductor substrate to be processed. The method comprises preparing a green compact of ceramic material. The green compact of ceramic material is formed into a form of a desired monolithic ceramic component of the gas delivery system. The formed green compact of ceramic material is fired to form the monolithic ceramic component of the gas delivery system.
摘要翻译：一种制造半导体基板处理装置的气体输送系统的整体式陶瓷部件的方法，其中所述气体输送系统构造成将处理气体供给到设置在其下游的气体分配部件。气体分配构件被配置为将处理气体供应到设备的真空室的处理区域，其中处理区域设置在待处理的半导体衬底的上表面上方。该方法包括制备陶瓷材料的压坯。陶瓷材料的生坯被形成为气体输送系统所需的整体式陶瓷部件的形式。将形成的陶瓷材料的压坯烧成以形成气体输送系统的整体式陶瓷部件。

6. 发明授权

US09090972B2 Gas supply systems for substrate processing chambers and methods therefor 有权
标题翻译：用于衬底处理室的气体供应系统及其方法
公开(公告)号：US09090972B2
公开(公告)日：2015-07-28
申请号：US13732054
申请日：2012-12-31
申请人： LAM RESEARCH CORPORATION
发明人： Iqbal Shareef , Mark Taskar , Evangelos Spyropoulos
IPC分类号： F16K11/16 , C23C16/455 , G05D11/13 , G05D7/06
CPC分类号： H01J37/32449 , C23C16/45561 , C23C16/513 , G05D7/06 , G05D7/0658 , G05D11/132 , H01J2237/332 , H01J2237/334 , H01L21/67069 , Y10T137/0324 , Y10T137/7722
摘要： A gas supply subsystem for providing a set of process gases to a substrate processing chamber, the set of process gases being a subset of a plurality of process gases available to the substrate processing chamber. The gas supply subsystem has fewer multi-gas mass flow controllers than the number of available process gases, wherein multiple process gases are multiplexed at the input of one or more of the multi-gas mass flow controllers. Pump-purge may be employed to improve gas switching speed for the multi-gas mass flow controllers.
摘要翻译：一种用于向衬底处理室提供一组工艺气体的气体供应子系统，该组工艺气体是可用于衬底处理室的多个工艺气体的子集。气体供应子系统具有比可用的工艺气体的数量少的多气体质量流量控制器，其中多个处理气体在多个气体质量流量控制器的一个或多个的输入处被多路复用。可以采用泵清洗来提高多气体质量流量控制器的气体切换速度。

7. 发明申请

US20140343875A1 METROLOGY METHOD FOR TRANSIENT GAS FLOW 有权
标题翻译：瞬态气体流量计方法
公开(公告)号：US20140343875A1
公开(公告)日：2014-11-20
申请号：US13896108
申请日：2013-05-16
申请人： Lam Research Corporation
发明人： Evangelos Spyropoulos , Iqbal Shareef
IPC分类号： G01F1/34
CPC分类号： G01F1/34 , B01J2219/00216 , G01F25/0007 , G01F25/0038 , G01F25/0092
摘要： A method of calculating a transient flow rate of a flowed process gas comprises flowing process gas through a mass flow controller into a chamber of known volume and measuring successive data sample points which include pressure data, temperature data, and a time value for each successive data sample point. Groups of successive data sample points are identified wherein each group shares one or more successive data sample points with another group, and ratio values are calculated for each of the successive data sample points wherein each ratio value is a ratio between the pressure data and a product of temperature and gas compressibility data for each respective time value. A line of best fit of the ratio values is determined within at least one group, and then the transient flow rate of the flowed process gas is calculated using a pressure rate of rise technique wherein the pressure rate of rise technique utilizes a ratio value determined from the line of best fit for at least one time value within the at least one group.
摘要翻译：一种计算流动工艺气体的瞬态流量的方法包括使工艺气体通过质量流量控制器流入已知体积的腔室并测量连续的数据采样点，其包括压力数据，温度数据和每个连续数据的时间值采样点。识别连续数据采样点的组，其中每个组与另一组共享一个或多个连续的数据采样点，并且为每个连续数据采样点计算每个连续数据采样点的比值，其中每个比值是压力数据和乘积之间的比率的每个时间值的温度和气体压缩性数据。在至少一组内确定比值的最佳拟合线，然后使用上升技术的压力比计算流动过程气体的瞬时流量，其中上升压力的技术利用从该线最适合至少一个组内的至少一个时间值。

8. 发明授权

US10431431B2 Gas supply delivery arrangement including a gas splitter for tunable gas flow control 有权
公开(公告)号：US10431431B2
公开(公告)日：2019-10-01
申请号：US14886458
申请日：2015-10-19
申请人： Lam Research Corporation
发明人： Mark Taskar , Iqbal Shareef , Anthony Zemlock , Ryan Bise , Nathan Kugland
IPC分类号： H01J37/32 , C23C16/455 , C23C16/52 , C23C14/22 , H01L21/67 , C23C16/50 , H01L21/311
摘要： A gas supply delivery arrangement of a plasma processing system for processing a substrate with gases introduced through at least first, second, and third gas injection zones comprises process gas supply inlets and tuning gas inlets. A mixing manifold comprises gas sticks in fluid communication with a process gas supply and tuning gas sticks in fluid communication with a tuning gas supply. A first gas outlet delivers gas to the first gas injection zone, a second gas outlet delivers gas to the second gas injection zone, and a third gas outlet delivers gas to the third gas injection zone. A gas splitter is in fluid communication with the mixing manifold, and includes a first valve arrangement which splits mixed gas exiting the mixing manifold into a first mixed gas supplied to the first gas outlet and a second mixed gas supplied to the second, and/or third gas outlets.

9. 发明授权

US09704761B2 Corrosion sensor retainer assembly apparatus and method for detecting corrosion 有权
公开(公告)号：US09704761B2
公开(公告)日：2017-07-11
申请号：US14489148
申请日：2014-09-17
申请人： Lam Research Corporation
发明人： Mark Taskar , Iqbal Shareef , Anthony Zemlock
IPC分类号： G01N17/02 , H01L21/66 , H01L21/67
CPC分类号： H01L22/10 , H01L21/67017
摘要： A corrosion sensor retainer assembly and method for predicting and detecting corrosion within a gas delivery system of a semiconductor substrate processing apparatus. The corrosion sensor retainer assembly comprises a laminate that includes a first insulating layer with a first port and a second insulating layer with a second port, wherein the first port and the second port are configured to retain a seal. The corrosion sensor retainer assembly includes a conductor housed within the laminate. The conductor forms a path that extends around the first port and the second port. At least a portion of the conductor has an exposed surface with a property that changes in the presence of corrosive gas or acid.

10. 发明授权

US09335768B2 Cluster mass flow devices and multi-line mass flow devices incorporating the same 有权
标题翻译：集群质量流量装置和结合其的多线质量流量装置
公开(公告)号：US09335768B2
公开(公告)日：2016-05-10
申请号：US14025162
申请日：2013-09-12
申请人： Lam Research Corporation
发明人： Mark Taskar , Iqbal Shareef
IPC分类号： F16K27/00 , G05D7/06
CPC分类号： G05D7/0641 , F16K27/003 , G05D7/0652 , Y10T137/2499
摘要： A multi-line mass flow device configured for controlled delivery of two or more fluids into a process chamber. The multi-line mass flow device comprises a cluster mass flow control manifold and a multi-inlet manifold. The cluster mass flow control manifold comprises a controller, a gas manifold mounting block, and two or more gas flow control stations. The multi-inlet manifold comprises a multi-inlet mounting block, and two or more isolation valves mounted on the multi-inlet mounting block.
摘要翻译：多线质量流量装置，被配置为将两种或多种流体控制输送到处理室中。多线质量流量装置包括集束质量流量控制歧管和多入口歧管。集群质量流量控制歧管包括控制器，气体歧管安装块和两个或更多个气体流量控制站。多入口歧管包括多入口安装块和安装在多入口安装块上的两个或更多隔离阀。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式