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1. 发明授权

US4579609A Growth of epitaxial films by chemical vapor deposition utilizing a surface cleaning step immediately before deposition 失效
标题翻译：通过化学气相沉积在沉积前立即利用表面清洁步骤生长外延膜
公开(公告)号：US4579609A
公开(公告)日：1986-04-01
申请号：US618592
申请日：1984-06-08
申请人： L. Rafael Reif , Thomas J. Donahue , Wayne R. Burger
发明人： L. Rafael Reif , Thomas J. Donahue , Wayne R. Burger
IPC分类号： H01L21/20 , H01L21/205 , H01L21/263 , H01L21/203 , H01L21/302
CPC分类号： H01L21/2633 , H01L21/02381 , H01L21/02532 , H01L21/0262 , Y10S148/017 , Y10S148/158 , Y10S438/974
摘要： A method and apparatus for low temperature deposition of epitaxial films using low pressure chemical vapor deposition (CVD) with and without plasma enhancement. More specifically, the process enables CVD of epitaxial silicon at temperatures below 800.degree. C. by use of an in situ argon plasma sputter cleaning treatment of the silicon substrate prior to deposition.
摘要翻译：一种使用具有和不具有等离子体增强的低压化学气相沉积（CVD）来低温沉积外延膜的方法和装置。更具体地，该方法通过使用在沉积之前的硅衬底的原位氩等离子体溅射清洗处理，能够在低于800℃的温度下对外延硅进行CVD。

2. 发明授权

US4957777A Very low pressure chemical vapor deposition process for deposition of titanium silicide films 失效
标题翻译：用于沉积硅化钛膜的极低压化学气相沉积工艺
公开(公告)号：US4957777A
公开(公告)日：1990-09-18
申请号：US423494
申请日：1989-10-12
申请人： Vida Ilderem , L. Rafael Reif , Prabha K. Tedrow
发明人： Vida Ilderem , L. Rafael Reif , Prabha K. Tedrow
IPC分类号： C23C16/04 , C23C16/42 , H01L21/768
CPC分类号： H01L21/76879 , C23C16/04 , C23C16/42
摘要： The selective or blanket deposition of titanium silicide using a Very Low Pressure Chemical Vapor Deposition process is described. Silane and titanium tetrachloride are used as the silicon and titanium sources, respectively. A thin polysilicon layer is deposited prior to the silicide deposition to promote the nucleation of titanium silicide. It is shown that selective deposition is possible by controlling the polysilicon and the titanium silicide deposition times. The resulting titanium silicide films have resistivities in the range of 15-25 micro-ohms-cm.
摘要翻译：描述了使用极低压化学气相沉积工艺的硅化钛的选择性或覆盖沉积。硅烷和四氯化钛分别用作硅和钛源。在硅化物沉积之前沉积薄多晶硅层以促进硅化钛的成核。显示通过控制多晶硅和硅化钛沉积时间来选择性沉积是可能的。所得到的硅化钛膜的电阻率在15-25微欧姆 - 厘米的范围内。

3. 发明授权

US4659401A Growth of epitaxial films by plasma enchanced chemical vapor deposition (PE-CVD) 失效
标题翻译：通过等离子体化学气相沉积（PE-CVD）生长外延膜
公开(公告)号：US4659401A
公开(公告)日：1987-04-21
申请号：US742930
申请日：1985-06-10
申请人： L. Rafael Reif , Clifton G. Fonstad, Jr.
发明人： L. Rafael Reif , Clifton G. Fonstad, Jr.
IPC分类号： C30B25/02 , H01L21/205 , H01L21/203 , H01L21/26
CPC分类号： H01L21/02463 , C30B25/02 , C30B29/40 , H01L21/02381 , H01L21/02392 , H01L21/02395 , H01L21/02502 , H01L21/02543 , H01L21/02546 , H01L21/02576 , H01L21/02579 , H01L21/0262 , Y10S148/158 , Y10S148/169 , Y10S438/925 , Y10S438/935
摘要： A method and apparatus for forming epitaxial thin film layers on substrates having abrupt transitions between layers of different composition or layers of different or like composition with different degrees of doping included therein. Gaseous reactants containing the desired elements to be included in the first film layer are injected into a CVD reaction chamber containing a substrate. The substrate is heated to a temperature high enough to obtain an epitaxial deposit, but low enough so as not to cause decomposition of the reactants. Once the gaseous reactant flows reach steady-state, an electric discharge or plasma is created in the gases to initiate the decomposition reaction and obtain a deposit. In this way, no transient effects are present. Once the deposit has attained sufficient thickness, the electric discharge is turned off to abruptly terminate deposition. A new gas-phase composition is then established for the next film to be deposited before again generating plasma in the gas reactants to deposit an epitaxial film of different composition or different degree of doping on top of the previous one.
摘要翻译：一种用于在衬底上形成外延薄膜层的方法和装置，其中不同或类似组成的不同组成或不同组成的层之间具有不同掺杂程度的层之间的突变。将含有要包含在第一膜层中的所需元素的气态反应物注入含有基材的CVD反应室中。将衬底加热到足够高的温度以获得外延沉积物，但是足够低以使反应物不会分解。一旦气态反应物流动达到稳态，就会在气体中产生放电或等离子体，以引发分解反应并获得沉积物。以这种方式，不存在瞬时效应。一旦沉积物达到足够的厚度，则放电被关闭以突然终止沉积。然后为下一次沉积的膜建立新的气相组合物，然后再次在气体反应物中产生等离子体，以在前一个的顶部沉积不同组成或不同掺杂程度的外延膜。

4. 发明授权

US4668530A Low pressure chemical vapor deposition of refractory metal silicides 失效
$Low pressure chemical vapor deposition of refractory metal silicides$
标题翻译：难熔金属硅化物的低压化学气相沉积
公开(公告)号：US4668530A
公开(公告)日：1987-05-26
申请号：US758146
申请日：1985-07-23
申请人： L. Rafael Reif , Prabha K. Tedrow , Vida Ilderem
发明人： L. Rafael Reif , Prabha K. Tedrow , Vida Ilderem
IPC分类号： C23C16/02 , C23C16/42 , C23C16/44 , H01L21/28 , B05D3/06
CPC分类号： C23C16/4401 , C23C16/0209 , C23C16/42 , H01L21/28097
摘要： This invention relates to a process and apparatus for the Low Pressure Chemical Vapor Deposition (LPCVD) of polycrystalline refractory metal silicides, such as TiSi.sub.2, in a reactor. An oxidized Si wafer is loaded in the reactor. The reactor is pumped down to a pressure of about 10.sup.-7 Torr, or less. The Si substrate is heated to the predetermined deposition temperature of about 630.degree. C. while avoiding heating of the reactor walls. The reactor is then purged with an inert gas, such as nitrogen. Next, polysilicon is deposited on the wafer by introducing SiH.sub.4 into the reactor at a pressure in the order of 0.2 Torr. A layer of polycrystalline titanium silicide is then formed on the polysilicon layer by introducing reactants, such as TiCl.sub.4 and SiH.sub.4, into the reactor at depositon temperatures between about 650.degree. to 700.degree. C. and pressures of between about 50 to 460 m Torr.
摘要翻译：本发明涉及一种用于反应器中的多晶难熔金属硅化物如TiSi 2的低压化学气相沉积（LPCVD）的方法和装置。将氧化的Si晶片装载在反应器中。将反应器泵送至约10-7乇或更低的压力。将Si衬底加热至约630℃的预定沉积温度，同时避免反应器壁的加热。然后用惰性气体如氮气吹扫反应器。接下来，通过将SiH 4以0.2托数量级的压力引入反应器中，将多晶硅沉积在晶片上。然后通过将反应物（例如TiCl 4和SiH 4）引入反应器中，在约650℃至700℃之间的沉积温度和约50至460mTorr的压力之间，在多晶硅层上形成多晶硅化钛层。

5. 发明授权

US4773355A Growth of epitaxial films by chemical vapor deposition 失效
标题翻译：通过化学气相沉积生长外延膜
公开(公告)号：US4773355A
公开(公告)日：1988-09-27
申请号：US939533
申请日：1986-12-09
申请人： L. Rafael Reif , Clifton G. Fonstad, Jr.
发明人： L. Rafael Reif , Clifton G. Fonstad, Jr.
IPC分类号： C30B25/02 , H01L21/205 , C23C16/50
CPC分类号： H01L21/02532 , C30B25/02 , C30B29/40 , H01L21/02381 , H01L21/02395 , H01L21/02543 , H01L21/02546 , H01L21/02576 , H01L21/02579 , H01L21/0262
摘要： A method and apparatus for forming epitaxial thin film layers on substrates having abrupt transitions between layers of different composition or layers of different or like composition with different degrees of doping included therein. Gaseous reactants containing the desired elements to be included in the first film layer are injected into a CVD reaction chamber containing a substrate. The substrate is heated to a temperature high enough to obtain an epitaxial deposit, but low enough so as not to cause decomposition of the reactants. Once the gaseous reactant flows reach steady-state, an electric discharge or plasma is created in the gases to initiate the decomposition reaction and obtain a deposit. In this way, no transient effects are present. Once the deposit has attained sufficient thickness, the electric discharge is turned off to abruptly terminate deposition. phase composition is then established for the next film to be deposited before again generating plasma in the gas reactants to deposit an epitaxial film of different composition or different degree of doping on top of the previous one.
摘要翻译：一种用于在衬底上形成外延薄膜层的方法和装置，其中不同或类似组成的不同组成或不同组成的层之间具有不同掺杂程度的层之间的突变。将含有要包含在第一膜层中的所需元素的气态反应物注入含有基材的CVD反应室中。将衬底加热到足够高的温度以获得外延沉积物，但是足够低以使反应物不会分解。一旦气态反应物流动达到稳态，就会在气体中产生放电或等离子体，以引发分解反应并获得沉积物。以这种方式，不存在瞬时效应。一旦沉积物达到足够的厚度，则放电被关闭以突然终止沉积。然后为下一次沉积的膜建立相组成，然后再次在气体反应物中产生等离子体，以在前一个的顶部沉积不同组成或不同掺杂程度的外延膜。

6. 发明授权

US5028977A Merged bipolar and insulated gate transistors 失效
标题翻译：合并双极和绝缘栅晶体管
公开(公告)号：US5028977A
公开(公告)日：1991-07-02
申请号：US367387
申请日：1989-06-16
申请人： K. O. Kenneth , Hae-Seung Lee , L. Rafael Reif
发明人： K. O. Kenneth , Hae-Seung Lee , L. Rafael Reif
IPC分类号： H01L27/07
CPC分类号： H01L27/0716
摘要： A vertical bipolar transistor is formed along with an IGFET transistor in a process in which the bipolar transistor collector, base and emitter structure is formed in the body of a semiconductor mesa-like structure while the IGFET transistor is formed in and along one of the sidewalls of the structure. Source and drain regions are formed in the structure by ion-implantation using a polysilicon gate electrode formed over a gate insulator on the sidewall as a self-aligning mask.
摘要翻译：在双极晶体管集电极，基极和发射极结构形成在半导体台面状结构体中的过程中，与IGFET晶体管一起形成垂直双极晶体管，同时IGFET晶体管沿着侧壁的结构。通过使用在侧壁上的栅绝缘体上形成的多晶硅栅极作为自对准掩模，通过离子注入在该结构中形成源区和漏区。

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