专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US4957777A Very low pressure chemical vapor deposition process for deposition of titanium silicide films 失效
标题翻译：用于沉积硅化钛膜的极低压化学气相沉积工艺
公开(公告)号：US4957777A
公开(公告)日：1990-09-18
申请号：US423494
申请日：1989-10-12
申请人： Vida Ilderem , L. Rafael Reif , Prabha K. Tedrow
发明人： Vida Ilderem , L. Rafael Reif , Prabha K. Tedrow
IPC分类号： C23C16/04 , C23C16/42 , H01L21/768
CPC分类号： H01L21/76879 , C23C16/04 , C23C16/42
摘要： The selective or blanket deposition of titanium silicide using a Very Low Pressure Chemical Vapor Deposition process is described. Silane and titanium tetrachloride are used as the silicon and titanium sources, respectively. A thin polysilicon layer is deposited prior to the silicide deposition to promote the nucleation of titanium silicide. It is shown that selective deposition is possible by controlling the polysilicon and the titanium silicide deposition times. The resulting titanium silicide films have resistivities in the range of 15-25 micro-ohms-cm.
摘要翻译：描述了使用极低压化学气相沉积工艺的硅化钛的选择性或覆盖沉积。硅烷和四氯化钛分别用作硅和钛源。在硅化物沉积之前沉积薄多晶硅层以促进硅化钛的成核。显示通过控制多晶硅和硅化钛沉积时间来选择性沉积是可能的。所得到的硅化钛膜的电阻率在15-25微欧姆 - 厘米的范围内。

2. 发明授权

US4668530A Low pressure chemical vapor deposition of refractory metal silicides 失效
$Low pressure chemical vapor deposition of refractory metal silicides$
标题翻译：难熔金属硅化物的低压化学气相沉积
公开(公告)号：US4668530A
公开(公告)日：1987-05-26
申请号：US758146
申请日：1985-07-23
申请人： L. Rafael Reif , Prabha K. Tedrow , Vida Ilderem
发明人： L. Rafael Reif , Prabha K. Tedrow , Vida Ilderem
IPC分类号： C23C16/02 , C23C16/42 , C23C16/44 , H01L21/28 , B05D3/06
CPC分类号： C23C16/4401 , C23C16/0209 , C23C16/42 , H01L21/28097
摘要： This invention relates to a process and apparatus for the Low Pressure Chemical Vapor Deposition (LPCVD) of polycrystalline refractory metal silicides, such as TiSi.sub.2, in a reactor. An oxidized Si wafer is loaded in the reactor. The reactor is pumped down to a pressure of about 10.sup.-7 Torr, or less. The Si substrate is heated to the predetermined deposition temperature of about 630.degree. C. while avoiding heating of the reactor walls. The reactor is then purged with an inert gas, such as nitrogen. Next, polysilicon is deposited on the wafer by introducing SiH.sub.4 into the reactor at a pressure in the order of 0.2 Torr. A layer of polycrystalline titanium silicide is then formed on the polysilicon layer by introducing reactants, such as TiCl.sub.4 and SiH.sub.4, into the reactor at depositon temperatures between about 650.degree. to 700.degree. C. and pressures of between about 50 to 460 m Torr.
摘要翻译：本发明涉及一种用于反应器中的多晶难熔金属硅化物如TiSi 2的低压化学气相沉积（LPCVD）的方法和装置。将氧化的Si晶片装载在反应器中。将反应器泵送至约10-7乇或更低的压力。将Si衬底加热至约630℃的预定沉积温度，同时避免反应器壁的加热。然后用惰性气体如氮气吹扫反应器。接下来，通过将SiH 4以0.2托数量级的压力引入反应器中，将多晶硅沉积在晶片上。然后通过将反应物（例如TiCl 4和SiH 4）引入反应器中，在约650℃至700℃之间的沉积温度和约50至460mTorr的压力之间，在多晶硅层上形成多晶硅化钛层。

3. 发明授权

US6002132A Thermionic thermal detector and detector array 失效
标题翻译：热离子检测器和检测器阵列
公开(公告)号：US6002132A
公开(公告)日：1999-12-14
申请号：US958243
申请日：1997-10-27
申请人： Jonathan M. Mooney , James E. Murguia , Prabha K. Tedrow
发明人： Jonathan M. Mooney , James E. Murguia , Prabha K. Tedrow
IPC分类号： G01J5/20 , G01N25/72 , H01L31/0328 , H01L31/09
CPC分类号： G01J5/20 , G01N25/72
摘要： A new kind of thermal detector and thermal imager for infrared radiation. A thermal detector/imager is a device for detecting/imaging in the infrared portion of the electromagnetic spectrum. This produces a video image, where the video brightness is a function of the incident power. The new thermal imager consists of a thermionic thermal detector having: a substrate having a thermal insulating gap; and a reverse biased CoSi.sub.2 diode suspended over the thermal insulating gap of the substrate and which senses temperature of thermionic emission by producing an output signal with a current that changes exponentially with temperature changes. The substrate is a silicon on insulator (SOI) wafer which has said thermal insulating gap on its top surface; an oxide insulator layer that covers the top surface of the thick silicon support layer, including the thermal insulating gap; and support legs placed on the top surface of the oxide insulator layer. The support legs support the reverse biased CoSi.sub.2 diode in place.
摘要翻译：一种用于红外辐射的新型热探测器和热像仪。热检测器/成像器是用于在电磁光谱的红外部分中检测/成像的装置。这产生视频图像，其中视频亮度是入射功率的函数。新的热成像仪由热离子热检测器组成，其具有：具有隔热间隙的基板; 以及悬浮在衬底的绝热间隙上的反向偏置CoSi2二极管，并通过产生具有随温度变化呈指数变化的电流的输出信号来感测热离子发射的温度。衬底是绝缘体上硅（SOI）晶片，其上表面具有绝热间隙; 覆盖厚硅支撑层的顶表面的氧化物绝缘体层，包括绝热间隙; 以及放置在氧化物绝缘体层的顶表面上的支撑腿。支撑腿支撑反向偏置的CoSi2二极管就位。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式