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    • 1. 发明授权
    • Working liquids and methods for modifying structured wafers suited for semiconductor fabrication
    • 用于修改适用于半导体制造的结构晶片的工作液体和方法
    • US06238592B1
    • 2001-05-29
    • US09266208
    • 1999-03-10
    • L. Charles HardyJennifer L. Trice
    • L. Charles HardyJennifer L. Trice
    • C09K1300
    • C09K3/1463C09G1/02H01L21/3212
    • A family of working liquids useful in modifying exposed surfaces of wafers for semiconductor fabrication are provided along with methods of modifying exposed surfaces of wafers for semiconductor fabrication utilizing such a family of working liquids, and semiconductor wafers made according the foregoing process. The working liquid of the invention is a solution of initial components, the components comprising: an oxidizing agent; an ionic buffer; a passivating agent; a chelating agent selected from iminodiacetic acid and salts thereof; and water. The method of the invention comprises the steps of: a) providing a wafer comprising a first material having a surface etched to form a pattern and a second material deployed over the surface of the first material; b) contacting the second material of the wafer with abrasive in the presence of the working liquid; and c) relatively moving the wafer while the second material is in contact with the abrasive until an exposed surface of the wafer is planar and comprises at least one area of exposed first material and one area of exposed second material.
    • 提供了可用于修改用于半导体制造的晶片的暴露表面的一系列工作液体,以及利用这样的工作液体族和根据前述方法制造的半导体晶片修改用于半导体制造的晶片的暴露表面的方法。 本发明的工作液是初始组分的溶液,其组分包括:氧化剂; 离子缓冲液 钝化剂; 选自亚氨基二乙酸及其盐的螯合剂; 和水。 本发明的方法包括以下步骤:a)提供包括第一材料的晶片,所述第一材料具有被蚀刻以形成图案的表面和在第一材料的表面上展开的第二材料; b)在工作液体的存在下使晶片的第二材料与研磨剂接触; 以及c)当所述第二材料与所述研磨剂接触时相对移动所述晶片,直到所述晶片的暴露表面是平面的并且包括暴露的第一材料和暴露的第二材料的一个区域的至少一个区域。
    • 5. 发明授权
    • Method of planarizing the upper surface of a semiconductor wafer
    • 平面化半导体晶片的上表面的方法
    • US06194317B1
    • 2001-02-27
    • US09091932
    • 1998-06-24
    • David A. KaisakiHeather K. KranzThomas E. WoodL. Charles Hardy
    • David A. KaisakiHeather K. KranzThomas E. WoodL. Charles Hardy
    • H01L21302
    • B24B21/04B24B7/228H01L21/3212
    • This invention pertains to a method of modifying or refining a surface of a wafer suited for semiconductor fabrication. This method may be used to modify a wafer having an unmodified, exposed surface comprised of a layer of a second material deployed over at least one discrete feature of a first material attached to the wafer. A first step of this method comprises contacting and relatively moving the exposed surface of the wafer with respect to an abrasive article, wherein the abrasive article comprises an exposed surface of a plurality of three-dimensional abrasive composites comprising a plurality of abrasive particles fixed and dispersed in a binder and maintaining contact to effect removal of the second material. In a second step, the contact and relative motion are continued until an exposed surface of the wafer has at least one area of exposed first material and at least one area of exposed second material.
    • 本发明涉及一种修改或精制适合半导体制造的晶片表面的方法。 该方法可以用于修改具有未修饰的暴露表面的晶片,该表面包括由连接到晶片的第一材料的至少一个离散特征部分的第二材料层。 该方法的第一步包括相对于磨料制品接触和相对移动晶片的暴露表面,其中磨料制品包括多个固定和分散的多个磨料颗粒的多个三维磨料复合材料的暴露表面 在粘合剂中并保持接触以实现第二材料的去除。 在第二步骤中,接触和相对运动继续进行,直到晶片的暴露表面具有暴露的第一材料的至少一个区域和暴露的第二材料的至少一个区域。