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1. 发明申请

US20140042380A1 RESISTANCE SWITCHING MATERIAL ELEMENT AND DEVICE EMPLOYING THE SAME 有权
标题翻译：电阻切换材料元件和使用它的器件
公开(公告)号：US20140042380A1
公开(公告)日：2014-02-13
申请号：US13962470
申请日：2013-08-08
申请人： Kyung-min KIM , Young-bae KIM , Chang-jung KIM , Sung-ho KIM , Sae-jin KIM , Seung-ryul LEE , Man CHANG , Eun-ju CHO
发明人： Kyung-min KIM , Young-bae KIM , Chang-jung KIM , Sung-ho KIM , Sae-jin KIM , Seung-ryul LEE , Man CHANG , Eun-ju CHO
IPC分类号： H01L45/00
CPC分类号： H01L45/08 , H01L27/2409 , H01L27/2481 , H01L45/1233 , H01L45/145
摘要： According to example embodiments, a resistance switching material element includes a resistance switching material layer between a first electrode and a second electrode, and a self-rectifying layer provided between the resistance switching material layer and one of the first and second electrodes. The second electrode may be on the first electrode.
摘要翻译：根据示例实施例，电阻切换材料元件包括在第一电极和第二电极之间的电阻切换材料层，以及设置在电阻切换材料层和第一和第二电极中的一个之间的自整流层。第二电极可以在第一电极上。

2. 发明申请

US20130146829A1 RESISTIVE RANDOM ACCESS MEMORY DEVICES AND METHODS OF MANUFACTURING THE SAME 审中-公开
标题翻译：电阻随机访问存储器件及其制造方法
公开(公告)号：US20130146829A1
公开(公告)日：2013-06-13
申请号：US13570653
申请日：2012-08-09
申请人： Kyung-min KIM , Young-bae KIM , Chang-jung KIM , Seung-ryul LEE , Chang-bum LEE , Man CHANG
发明人： Kyung-min KIM , Young-bae KIM , Chang-jung KIM , Seung-ryul LEE , Chang-bum LEE , Man CHANG
IPC分类号： H01L47/00 , H01L21/02
CPC分类号： H01L45/08 , H01L27/2436 , H01L45/1233 , H01L45/146 , H01L45/165 , H01L45/1675
摘要： Resistive random access memory (RRAM) devices, and methods of manufacturing the same, include a RRAM device having a switching device, and a storage node connected to the switching device, wherein the storage node includes a first electrode, a metal oxide layer, and a second electrode sequentially stacked. The metal oxide layer contains a semiconductor material element affecting resistance of the storage node.
摘要翻译：电阻随机存取存储器（RRAM）器件及其制造方法包括具有开关器件的RRAM器件和连接到开关器件的存储节点，其中存储节点包括第一电极，金属氧化物层和依次堆叠的第二电极。金属氧化物层含有影响存储节点电阻的半导体材料元素。

3. 发明申请

US20130051125A1 METHOD OF OPERATING SEMICONDUCTOR DEVICE INCLUDING VARIABLE RESISTANCE DEVICE 有权
标题翻译：包括可变电阻器件的半导体器件的操作方法
公开(公告)号：US20130051125A1
公开(公告)日：2013-02-28
申请号：US13590978
申请日：2012-08-21
申请人： Man CHANG , Young-bae KIM , Chang-jung KIM , Myoung-jae LEE , Seong-jun PARK , Ji-hyun HUR , Dong-soo LEE , Chang-bum LEE , Seung-ryul LEE
发明人： Man CHANG , Young-bae KIM , Chang-jung KIM , Myoung-jae LEE , Seong-jun PARK , Ji-hyun HUR , Dong-soo LEE , Chang-bum LEE , Seung-ryul LEE
IPC分类号： G11C11/00
CPC分类号： G11C13/0007 , G11C11/5685 , G11C13/00 , G11C13/0064 , G11C13/0069 , G11C29/021 , G11C29/028 , G11C2013/0073 , G11C2013/0076 , G11C2213/56
摘要： According to an example embodiment, a method of operating a semiconductor device having a variable resistance device includes: applying a first voltage to the variable resistance device to change a resistance value of the variable resistance device from a first resistance value to a second resistance value that is different from the first resistance value; sensing a first current flowing through the variable resistance device to which the first voltage is applied; determining a second voltage used for changing the variable resistance device from the second resistance value to the first resistance value, based on a dispersion of the sensed first current; and applying the determined second voltage to the variable resistance device.
摘要翻译：根据示例性实施例，一种操作具有可变电阻器件的半导体器件的方法包括：向可变电阻器件施加第一电压以将可变电阻器件的电阻值从第一电阻值改变为第二电阻值，与第一电阻值不同; 感测流过施加有第一电压的可变电阻装置的第一电流; 基于感测到的第一电流的偏差，确定用于将可变电阻器件从第二电阻值改变为第一电阻值的第二电压; 以及将所确定的第二电压施加到所述可变电阻装置。

4. 发明申请

US20120161821A1 VARIABLE RESISTANCE DEVICE, SEMICONDUCTOR DEVICE INCLUDING THE VARIABLE RESISTANCE DEVICE, AND METHOD OF OPERATING THE SEMICONDUCTOR DEVICE 有权
标题翻译：可变电阻器件，包括可变电阻器件的半导体器件，以及操作半导体器件的方法
公开(公告)号：US20120161821A1
公开(公告)日：2012-06-28
申请号：US13313720
申请日：2011-12-07
申请人： Man CHANG , Young-bae KIM , Chang-jung KIM , Myoung-jae LEE , Ji-hyun HUR , Dong-soo LEE , Chang-bum LEE , Seung-ryul LEE
发明人： Man CHANG , Young-bae KIM , Chang-jung KIM , Myoung-jae LEE , Ji-hyun HUR , Dong-soo LEE , Chang-bum LEE , Seung-ryul LEE
IPC分类号： H03B1/00 , H01C7/10
CPC分类号： G11C13/0069 , G11C11/5685 , G11C13/0064 , G11C2013/0073
摘要： A method of operating a semiconductor device that includes a variable resistance device, the method including applying a first voltage to the variable resistance device so as to change a resistance value of the variable resistance device from a first resistance value to a second resistance value that is different from the first resistance value; sensing first current flowing through the variable resistance device to which the first voltage is applied; determining whether the first current falls within a predetermined range of current; and if the first current does not fall within the first range of current, applying an additional first voltage that is equal to the first voltage to the variable resistance device.
摘要翻译：一种操作包括可变电阻器件的半导体器件的方法，所述方法包括向可变电阻器件施加第一电压以便将可变电阻器件的电阻值从第一电阻值改变为第二电阻值，该第二电阻值是不同于第一个电阻值; 感测流过施加有第一电压的可变电阻装置的第一电流; 确定第一电流是否落在预定的电流范围内; 并且如果所述第一电流不在所述第一电流范围内，则向所述可变电阻装置施加等于所述第一电压的附加第一电压。

5. 发明申请

US20120327032A1 LIGHT-SENSING APPARATUSES, METHODS OF DRIVING THE LIGHT-SENSING APPARATUSES, AND OPTICAL TOUCH SCREEN APPARATUSES INCLUDING THE LIGHT-SENSING APPARATUSES 有权
标题翻译：感光装置，驱动感光装置的方法，以及包括感光装置的光触控屏幕装置
公开(公告)号：US20120327032A1
公开(公告)日：2012-12-27
申请号：US13435666
申请日：2012-03-30
申请人： Sang-hun JEON , I-hun SONG , Seung-eon AHN , Chang-jung KIM , Young KIM
发明人： Sang-hun JEON , I-hun SONG , Seung-eon AHN , Chang-jung KIM , Young KIM
IPC分类号： G06F3/042 , H01L31/113 , H01L31/0264
CPC分类号： H01L27/14609 , G06F3/042 , G06F2203/04103
摘要： Light-sensing apparatuses may include a light sensor transistor and a switching transistor in a light-sensing pixel, the transistors being oxide semiconductor transistors. In the light-sensing apparatus, the light sensor transistor and the switching transistor in the light-sensing pixel may be adjacently formed on one substrate, the switching transistor including a channel material that is relatively less light-sensitive than the light sensor transistor and is stable, and the light sensor transistor includes a channel material that is relatively light-sensitive. The light sensor transistor may include a transparent upper electrode on a surface of a channel, and a negative voltage may be applied to the transparent upper electrode, whereby a threshold voltage shift in a negative voltage direction may be prevented or reduced.
摘要翻译：光感测装置可以包括光感测像素中的光传感器晶体管和开关晶体管，该晶体管是氧化物半导体晶体管。在感光装置中，光感测像素中的光传感器晶体管和开关晶体管可以相邻地形成在一个衬底上，该开关晶体管包括与光传感器晶体管相比较不光敏的沟道材料，并且是并且光传感器晶体管包括相对光敏的通道材料。光传感器晶体管可以在通道的表面上包括透明上电极，并且可以向透明上电极施加负电压，由此可以防止或减小负电压方向上的阈值电压偏移。

6. 发明申请

US20130208204A1 THIN FILM TRANSISTOR AND DISPLAY PANEL EMPLOYING THE SAME 有权
标题翻译：薄膜晶体管和使用其的显示面板
公开(公告)号：US20130208204A1
公开(公告)日：2013-08-15
申请号：US13616964
申请日：2012-09-14
申请人： Sang-hun JEON , I-hun SONG , Chang-jung KIM , Seung-eon AHN
发明人： Sang-hun JEON , I-hun SONG , Chang-jung KIM , Seung-eon AHN
IPC分类号： G02F1/1368 , H01L29/786
CPC分类号： H01L29/45 , G02F1/13338 , G02F1/1368 , G06F3/0421 , G06F2203/04103 , H01L29/4908 , H01L29/78606 , H01L29/7869
摘要： A thin film transistor is provided. The transistor includes a gate; a first passivation layer covering the gate; a channel layer disposed on the first passivation layer; a source and a drain that are disposed on the first passivation layer and contact two sides of the channel layer; a second passivation layer covering the channel layer, the source, and the drain; first and second transparent electrode layers that are disposed on the second passivation layer and spaced apart from each other; a first transparent conductive via that penetrates the second passivation layer and connects the source and the first transparent electrode layer; and a second transparent conductive via that penetrates the second passivation layer and connects the drain and the second transparent electrode layer. A cross-sectional area of the gate is larger than a cross-sectional area of the channel layer, the source, and the drain combined.
摘要翻译：提供薄膜晶体管。晶体管包括一个栅极; 覆盖所述栅极的第一钝化层; 设置在所述第一钝化层上的沟道层; 源极和漏极，其设置在所述第一钝化层上并接触所述沟道层的两侧; 覆盖沟道层，源极和漏极的第二钝化层; 第一和第二透明电极层，其设置在第二钝化层上并彼此间隔开; 第一透明导电通孔，其穿透所述第二钝化层并连接所述源极和所述第一透明电极层; 以及第二透明导电通孔，其穿透第二钝化层并连接漏极和第二透明电极层。栅极的横截面面积大于沟道层，源极和漏极组合的横截面面积。

7. 发明申请

US20120295399A1 OXIDE-BASED THIN FILM TRANSISTOR, METHOD OF FABRICATING THE SAME, ZINC OXIDE ETCHANT, AND A METHOD OF FORMING THE SAME 审中-公开
标题翻译：基于氧化物的薄膜晶体管，其制造方法，氧化锌蚀刻剂及其形成方法
公开(公告)号：US20120295399A1
公开(公告)日：2012-11-22
申请号：US13559959
申请日：2012-07-27
申请人： Chang-jung KIM , Young-soo Park , Eun-ha Lee , Jae-chul Park
发明人： Chang-jung KIM , Young-soo Park , Eun-ha Lee , Jae-chul Park
IPC分类号： H01L21/336 , C09K13/06 , C09K13/08 , H01L21/36
CPC分类号： C09K13/06 , H01L21/467 , H01L29/7869
摘要： Provided is a zinc (Zn) oxide-based thin film transistor that may include a gate, a gate insulating layer on the gate, a channel including zinc oxide and may be on a portion of the gate insulating layer, and a source and drain contacting respective sides of the channel. The zinc (Zn) oxide-based thin film transistor may further include a recession in the channel between the source and the drain, and a zinc oxide-based etchant may be used to form the recession.
摘要翻译：提供一种锌（Zn）氧化物基薄膜晶体管，其可以包括栅极，栅极上的栅极绝缘层，包含氧化锌的沟道，并且可以在栅极绝缘层的一部分上，以及源极和漏极接触渠道的各边。锌（Zn）氧化物基薄膜晶体管还可以包括在源极和漏极之间的沟道中的凹陷，并且可以使用氧化锌基蚀刻剂来形成凹陷。

8. 发明申请

US20130175431A1 DETECTOR HAVING LARGE AREA AND METHOD OF MANUFACTURING THE SAME 审中-公开
标题翻译：具有大面积检测器及其制造方法
公开(公告)号：US20130175431A1
公开(公告)日：2013-07-11
申请号：US13568593
申请日：2012-08-07
申请人： Dae-kun YOON , Young KIM , Jae-chul PARK , Sang-wook HAN , Sun-il KIM , Chang-jung KIM , Jun-su LEE
发明人： Dae-kun YOON , Young KIM , Jae-chul PARK , Sang-wook HAN , Sun-il KIM , Chang-jung KIM , Jun-su LEE
IPC分类号： H01L27/146 , H01L31/18
CPC分类号： H01L27/14603
摘要： A detector includes a substrate; two first regions, each first region having a linear shape, and the two first regions being separated from each other on the substrate and arranged in parallel; and a pixel region provided between the two first regions and including a plurality of pixels, the pixel region including a plurality of second regions perpendicular to the two first regions, each of the two first regions including a peripheral circuit portion, each of the plurality of second regions including a driver line, and a width of each of the plurality of second regions being equal to or less than a width of a single pixel.
摘要翻译：检测器包括基板; 两个第一区域，每个第一区域具有直线形状，并且两个第一区域在基板上彼此分离并且平行排列; 以及设置在所述两个第一区域之间并且包括多个像素的像素区域，所述像素区域包括垂直于所述两个第一区域的多个第二区域，所述两个第一区域中的每一个包括外围电路部分，第二区域包括驱动器线，并且所述多个第二区域中的每一个的宽度等于或小于单个像素的宽度。

9. 发明申请

US20120267513A1 Light-Sensing Apparatus And Method Of Driving The Same 有权
标题翻译：感光装置及其驱动方法
公开(公告)号：US20120267513A1
公开(公告)日：2012-10-25
申请号：US13358862
申请日：2012-01-26
申请人： Sang-hun JEON , I-hun SONG , Seung-eon AHN , Chang-jung KIM , Young KIM
发明人： Sang-hun JEON , I-hun SONG , Seung-eon AHN , Chang-jung KIM , Young KIM
IPC分类号： H01L27/144 , H01L31/00
CPC分类号： H01L27/14632 , H01L27/1446 , H01L27/14603 , H01L27/14623
摘要： According to an example embodiment, a light-sensing apparatus may include an array of light-sensing pixels, a first gate driver, and a signal output unit. Each of the light-sensing pixels may include a light sensor transistor configured to sense light, a switch transistor configured to output a light-sensing signal from the light sensor transistor, and a conductive light-shielding film on a light-incident surface of the switch transistor. The light sensor transistor and the switch transistor may have the same oxide semiconductor transistor structure. The first gate driver may be configured to provide a gate voltage and a negative bias voltage to each of the light-sensing pixels. The signal output unit may be configured to receive the light-sensing signal from each of the light-sensing pixels and output a data signal.
摘要翻译：根据示例实施例，光感测装置可以包括光感测像素阵列，第一栅极驱动器和信号输出单元。每个感光像素可以包括被配置为感测光的光传感器晶体管，被配置为从光传感器晶体管输出光感测信号的开关晶体管，以及在所述光传感器晶体管的光入射表面上的导电屏蔽膜开关晶体管。光传感器晶体管和开关晶体管可以具有相同的氧化物半导体晶体管结构。第一栅极驱动器可以被配置为向每个感光像素提供栅极电压和负的偏置电压。信号输出单元可以被配置为从每个感光像素接收光感测信号并输出数据信号。

10. 发明申请

US20130075608A1 IMAGE SENSOR AND X-RAY IMAGE SENSING MODULE INCLUDING THE SAME 有权
标题翻译：图像传感器和X射线图像感应模块，包括它们
公开(公告)号：US20130075608A1
公开(公告)日：2013-03-28
申请号：US13597726
申请日：2012-08-29
申请人： Sang-wook HAN , Hyun-sik KIM , Gyu-Hyeong CHO , Chang-jung KIM , Jae-chul PARK , Young-hun SUNG , Young KIM , Jun-hyeok YANG
发明人： Sang-wook HAN , Hyun-sik KIM , Gyu-Hyeong CHO , Chang-jung KIM , Jae-chul PARK , Young-hun SUNG , Young KIM , Jun-hyeok YANG
IPC分类号： G01T1/16 , H03F3/45 , H03F1/34
CPC分类号： G01T1/247 , G01T1/17 , H04N5/374 , H04N5/378
摘要： According to example embodiments, an image sensor includes a charge sensing amplifier configured to amplify charges sensed by a sensing unit. The charge sensing amplifier includes an input terminal, an amplification terminal, an output terminal, a first capacitor connected between the input terminal and the amplification terminal, a first switch connected between the input terminal and the amplification terminal, a second capacitor connected between the amplification terminal and the output terminal, and a second switch connected between the output terminal and a reference voltage terminal.
摘要翻译：根据示例实施例，图像传感器包括被配置为放大由感测单元感测的电荷的电荷感测放大器。电荷感测放大器包括输入端子，放大端子，输出端子，连接在输入端子和放大端子之间的第一电容器，连接在输入端子和放大端子之间的第一开关，连接在放大器之间的第二电容器端子和输出端子，以及连接在输出端子和参考电压端子之间的第二开关。

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