专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20130009145A1 Transistor, Electronic Device Including Transistor, And Manufacturing Methods Thereof 有权
标题翻译：晶体管，包括晶体管的电子器件及其制造方法
公开(公告)号：US20130009145A1
公开(公告)日：2013-01-10
申请号：US13404136
申请日：2012-02-24
申请人： Sang-hun JEON , I-hun SONG , Seung-eon AHN , Chang-jung KIM , Young KIM
发明人： Sang-hun JEON , I-hun SONG , Seung-eon AHN , Chang-jung KIM , Young KIM
IPC分类号： H01L29/12 , H01L21/336
CPC分类号： H01L27/14692 , H01L27/14612
摘要： A transistor may include an active layer having a plurality of oxide semiconductor layers and an insulating layer disposed therebetween. The insulating layer may include a material that has higher etch selectivity with respect to at least one of the plurality of oxide semiconductor layers. The electronic device may include a first transistor and a second transistor connected to the first transistor. The second transistor may include an active layer having a different structure from that of the active layer included in the first transistor. The active layer of the second transistor may have the same structure as one of the plurality of oxide semiconductor layers constituting the active layer of the first transistor.
摘要翻译：晶体管可以包括具有多个氧化物半导体层的有源层和设置在其间的绝缘层。绝缘层可以包括相对于多个氧化物半导体层中的至少一个具有较高蚀刻选择性的材料。电子设备可以包括连接到第一晶体管的第一晶体管和第二晶体管。第二晶体管可以包括具有与包括在第一晶体管中的有源层的结构不同的结构的有源层。第二晶体管的有源层可以具有与构成第一晶体管的有源层的多个氧化物半导体层中的一个相同的结构。

2. 发明申请

US20130208204A1 THIN FILM TRANSISTOR AND DISPLAY PANEL EMPLOYING THE SAME 有权
标题翻译：薄膜晶体管和使用其的显示面板
公开(公告)号：US20130208204A1
公开(公告)日：2013-08-15
申请号：US13616964
申请日：2012-09-14
申请人： Sang-hun JEON , I-hun SONG , Chang-jung KIM , Seung-eon AHN
发明人： Sang-hun JEON , I-hun SONG , Chang-jung KIM , Seung-eon AHN
IPC分类号： G02F1/1368 , H01L29/786
CPC分类号： H01L29/45 , G02F1/13338 , G02F1/1368 , G06F3/0421 , G06F2203/04103 , H01L29/4908 , H01L29/78606 , H01L29/7869
摘要： A thin film transistor is provided. The transistor includes a gate; a first passivation layer covering the gate; a channel layer disposed on the first passivation layer; a source and a drain that are disposed on the first passivation layer and contact two sides of the channel layer; a second passivation layer covering the channel layer, the source, and the drain; first and second transparent electrode layers that are disposed on the second passivation layer and spaced apart from each other; a first transparent conductive via that penetrates the second passivation layer and connects the source and the first transparent electrode layer; and a second transparent conductive via that penetrates the second passivation layer and connects the drain and the second transparent electrode layer. A cross-sectional area of the gate is larger than a cross-sectional area of the channel layer, the source, and the drain combined.
摘要翻译：提供薄膜晶体管。晶体管包括一个栅极; 覆盖所述栅极的第一钝化层; 设置在所述第一钝化层上的沟道层; 源极和漏极，其设置在所述第一钝化层上并接触所述沟道层的两侧; 覆盖沟道层，源极和漏极的第二钝化层; 第一和第二透明电极层，其设置在第二钝化层上并彼此间隔开; 第一透明导电通孔，其穿透所述第二钝化层并连接所述源极和所述第一透明电极层; 以及第二透明导电通孔，其穿透第二钝化层并连接漏极和第二透明电极层。栅极的横截面面积大于沟道层，源极和漏极组合的横截面面积。

3. 发明申请

US20120327032A1 LIGHT-SENSING APPARATUSES, METHODS OF DRIVING THE LIGHT-SENSING APPARATUSES, AND OPTICAL TOUCH SCREEN APPARATUSES INCLUDING THE LIGHT-SENSING APPARATUSES 有权
标题翻译：感光装置，驱动感光装置的方法，以及包括感光装置的光触控屏幕装置
公开(公告)号：US20120327032A1
公开(公告)日：2012-12-27
申请号：US13435666
申请日：2012-03-30
申请人： Sang-hun JEON , I-hun SONG , Seung-eon AHN , Chang-jung KIM , Young KIM
发明人： Sang-hun JEON , I-hun SONG , Seung-eon AHN , Chang-jung KIM , Young KIM
IPC分类号： G06F3/042 , H01L31/113 , H01L31/0264
CPC分类号： H01L27/14609 , G06F3/042 , G06F2203/04103
摘要： Light-sensing apparatuses may include a light sensor transistor and a switching transistor in a light-sensing pixel, the transistors being oxide semiconductor transistors. In the light-sensing apparatus, the light sensor transistor and the switching transistor in the light-sensing pixel may be adjacently formed on one substrate, the switching transistor including a channel material that is relatively less light-sensitive than the light sensor transistor and is stable, and the light sensor transistor includes a channel material that is relatively light-sensitive. The light sensor transistor may include a transparent upper electrode on a surface of a channel, and a negative voltage may be applied to the transparent upper electrode, whereby a threshold voltage shift in a negative voltage direction may be prevented or reduced.
摘要翻译：光感测装置可以包括光感测像素中的光传感器晶体管和开关晶体管，该晶体管是氧化物半导体晶体管。在感光装置中，光感测像素中的光传感器晶体管和开关晶体管可以相邻地形成在一个衬底上，该开关晶体管包括与光传感器晶体管相比较不光敏的沟道材料，并且是并且光传感器晶体管包括相对光敏的通道材料。光传感器晶体管可以在通道的表面上包括透明上电极，并且可以向透明上电极施加负电压，由此可以防止或减小负电压方向上的阈值电压偏移。

4. 发明申请

US20120267513A1 Light-Sensing Apparatus And Method Of Driving The Same 有权
标题翻译：感光装置及其驱动方法
公开(公告)号：US20120267513A1
公开(公告)日：2012-10-25
申请号：US13358862
申请日：2012-01-26
申请人： Sang-hun JEON , I-hun SONG , Seung-eon AHN , Chang-jung KIM , Young KIM
发明人： Sang-hun JEON , I-hun SONG , Seung-eon AHN , Chang-jung KIM , Young KIM
IPC分类号： H01L27/144 , H01L31/00
CPC分类号： H01L27/14632 , H01L27/1446 , H01L27/14603 , H01L27/14623
摘要： According to an example embodiment, a light-sensing apparatus may include an array of light-sensing pixels, a first gate driver, and a signal output unit. Each of the light-sensing pixels may include a light sensor transistor configured to sense light, a switch transistor configured to output a light-sensing signal from the light sensor transistor, and a conductive light-shielding film on a light-incident surface of the switch transistor. The light sensor transistor and the switch transistor may have the same oxide semiconductor transistor structure. The first gate driver may be configured to provide a gate voltage and a negative bias voltage to each of the light-sensing pixels. The signal output unit may be configured to receive the light-sensing signal from each of the light-sensing pixels and output a data signal.
摘要翻译：根据示例实施例，光感测装置可以包括光感测像素阵列，第一栅极驱动器和信号输出单元。每个感光像素可以包括被配置为感测光的光传感器晶体管，被配置为从光传感器晶体管输出光感测信号的开关晶体管，以及在所述光传感器晶体管的光入射表面上的导电屏蔽膜开关晶体管。光传感器晶体管和开关晶体管可以具有相同的氧化物半导体晶体管结构。第一栅极驱动器可以被配置为向每个感光像素提供栅极电压和负的偏置电压。信号输出单元可以被配置为从每个感光像素接收光感测信号并输出数据信号。

5. 发明申请

US20130241881A1 PHOTOSENSING TRANSISTORS, METHODS OF MANUFACTURING THE SAME, AND DISPLAY PANELS EMPLOYING A PHOTOSENSING TRANSISTOR 有权
标题翻译：照相晶体管，其制造方法以及使用摄影晶体管的显示面板
公开(公告)号：US20130241881A1
公开(公告)日：2013-09-19
申请号：US13607019
申请日：2012-09-07
申请人： Sang-hun JEON , I-hun SONG , Seung-eon AHN
发明人： Sang-hun JEON , I-hun SONG , Seung-eon AHN
IPC分类号： G06F3/042 , H01L31/0224 , H01L29/786
CPC分类号： H01L31/1136 , G01J1/42 , G01J2001/4473 , G06F3/0421 , G06F2203/04103 , H01L31/032
摘要： Photosensing transistors, display panels employing a photosensing transistor, and methods of manufacturing the same, include a gate layer, a gate insulation layer on the gate layer, a channel layer on the gate insulation layer, an etch stop layer on a partial area of the channel layer, a source and a drain on the channel layer and separated from each other with the etch stop layer being interposed between the source and the drain, and a passivation layer covering the source, the drain, and the etch stop layer, wherein the source is separated from the etch stop layer.
摘要翻译：采用光敏晶体管的感光晶体管，显示面板及其制造方法包括栅极层，栅极层上的栅极绝缘层，栅极绝缘层上的沟道层，位于栅极绝缘层的局部区域上的蚀刻停止层沟道层，沟道层上的源极和漏极，并且彼此分离，其中蚀刻停止层插入在源极和漏极之间，以及钝化层，覆盖源极，漏极和蚀刻停止层，其中，源与蚀刻停止层分离。

6. 发明申请

US20120170794A1 SLIM-TYPE SPEAKER AND METHOD OF ASSEMBLING THE SAME 有权
标题翻译： SLIM型扬声器及其组装方法
公开(公告)号：US20120170794A1
公开(公告)日：2012-07-05
申请号：US13343342
申请日：2012-01-04
申请人： Min KIM , Hag-do KIM , Sang-hun JEON
发明人： Min KIM , Hag-do KIM , Sang-hun JEON
IPC分类号： H04R1/00 , H04R31/00
CPC分类号： H04R9/043 , Y10T29/49005
摘要： A speaker includes a frame, a diaphragm disposed in a top end of the frame of the speaker and a bobbin disposed below the diaphragm A voice coil is wound around a bottom end of the bobbin and a magnetic member having a groove in which the bottom end of the bobbin around which the voice coil is wound, is inserted and reciprocated in a straight line upward and downward A central pillar is fixed to the magnetic member at a center of the bobbin and extends parallel to the movement of the bobbin. A damper supports an inner circumferential surface of the bobbin from the central pillar. The damper additionally supports an outer circumferential surface of the bobbin, from the frame, so as to allow the bobbin to reciprocate in a straight line. Support of the bobbin by the damper in both lengthwise and width directions results in minimization of wobble and distortion, so that accurate sound is generated by the speaker.
摘要翻译：扬声器包括框架，设置在扬声器的框架的顶端的隔膜和设置在隔膜下方的绕线筒。线圈缠绕在线轴的底端，磁性构件具有槽，底部端部卷绕绕线圈的线轴以上下方向的直线被插入并往复运动中心支柱固定在线轴的中心处的磁性部件上，与线轴的运动平行地延伸。阻尼器从中心支柱支撑线轴的内圆周表面。阻尼器另外从框架支撑筒管的外圆周表面，以便使筒管以直线往复运动。通过阻尼器在长度方向和宽度方向上支撑线轴导致摆动和失真的最小化，从而使扬声器产生准确的声音。

7. 发明申请

US20080217677A1 Non-volatile semiconductor memory device with alternative metal gate material 审中-公开
公开(公告)号：US20080217677A1
公开(公告)日：2008-09-11
申请号：US12153148
申请日：2008-05-14
申请人： Sang-hun JEON , Jeong-hee HAN , Chung-woo KIM
发明人： Sang-hun JEON , Jeong-hee HAN , Chung-woo KIM
IPC分类号： H01L29/788
CPC分类号： H01L29/513 , G11C16/0416 , G11C16/0466 , H01L29/40114 , H01L29/40117 , H01L29/7881 , H01L29/792
摘要： A non-volatile semiconductor memory device comprises a substrate including a source region, a drain region and a channel region provided between the source region and the drain region with a gate stack located above the channel region with a metal gate located above the gate stack. The metal gate is comprised of a metal having a specific metal work function relative to a composition of a layer of the gate stack that causes electrons to travel through the entire thickness of the blocking layer via direct tunneling. The gate stack preferably comprises a multiple layer stack selected from a group of multiple layer stacks consisting of: ONO, ONH, OHH, OHO, HHH, or HNH, where O is an oxide material, N is SiN, and H is a high κ material.

8. 发明申请

US20080261366A1 NON-VOLATILE MEMORY DEVICE HAVING IMPROVED ERASE EFFICIENCY AND METHOD OF MANUFACTURING THE SAME 审中-公开
标题翻译：具有改善的消除效率的非易失性存储器件及其制造方法
公开(公告)号：US20080261366A1
公开(公告)日：2008-10-23
申请号：US12125280
申请日：2008-05-22
申请人： Sang-hun JEON , Chung-woo Kim
发明人： Sang-hun JEON , Chung-woo Kim
IPC分类号： H01L21/336
CPC分类号： H01L29/66825 , H01L29/40114 , H01L29/40117 , H01L29/42324 , H01L29/66833 , H01L29/7881 , H01L29/792
摘要： A non-volatile memory device having an improved erase efficiency and a method of manufacturing the same are provided. The method includes: forming a stack structure of a tunnel dielectric layer, a charge trapping layer, a charge blocking layer and a gate on a semiconductor substrate; and performing a post treatment of the gate using an oxygen or CF4 plasma or ion implantation to increase a work function of an element forming the gate. Since the work function of the metal layer forming the gate can be further increased, an electron back tunneling can be suppressed during an erase operation.
摘要翻译：提供了具有改进的擦除效率的非易失性存储器件及其制造方法。该方法包括：在半导体衬底上形成隧道介电层，电荷俘获层，电荷阻挡层和栅极的堆叠结构; 以及使用氧或CF 4等离子体或离子注入来执行栅极的后处理以增加形成栅极的元件的功函数。由于可以进一步增加形成栅极的金属层的功函数，所以可以在擦除操作期间抑制电子反向隧穿。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式