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    • 1. 发明授权
    • Method and apparatus for recognizing characters
    • 用于识别字符的方法和装置
    • US08836959B2
    • 2014-09-16
    • US12708272
    • 2010-02-18
    • Kyung-Ho ParkDong-Hyun LeeJae-Myung Baek
    • Kyung-Ho ParkDong-Hyun LeeJae-Myung Baek
    • G06K9/00G06K9/22H04N1/107
    • H04N1/107G06K9/228G06K2209/01H04N1/1071
    • A method and apparatus are provided for recognizing characters in a portable terminal with a scan module. Scanned image data is generated by the scan module by scanning a scan target through a scanning-light input/output panel provided on an external surface of the portable terminal as the portable terminal moves across the scan target. Part of the scanned image data is deleted when a current moving speed of the portable terminal is less than a lower limit of an optimal scan speed range, and character recognition is performed on remaining scanned image data. Image data most similar to the scanned image data is detected from a previously stored correction image database when the current moving speed is greater than an upper limit of the optimal scan speed range, and characters corresponding to the detected image data are output as character recognition results.
    • 提供了一种利用扫描模块识别便携式终端中的字符的方法和装置。 扫描图像数据由扫描模块通过扫描目标通过便携式终端在扫描目标上移动而设置在便携式终端的外部表面上的扫描光输入/输出面板产生。 当便携式终端的当前移动速度小于最佳扫描速度范围的下限时,扫描图像数据的一部分被删除,并且对剩余的扫描图像数据执行字符识别。 当当前移动速度大于最佳扫描速度范围的上限时,从先前存储的校正图像数据库中检测到与扫描图像数据最相似的图像数据,并且输出与检测到的图像数据相对应的字符作为字符识别结果 。
    • 10. 发明授权
    • Method for a semiconductor device having reduced contact resistance and leakage
    • 具有降低的接触电阻和泄漏的半导体器件的方法
    • US06214710B1
    • 2001-04-10
    • US09207088
    • 1998-12-07
    • Kyung-Ho ParkChih-Chen ChoMing Jang Hwang
    • Kyung-Ho ParkChih-Chen ChoMing Jang Hwang
    • H01L213205
    • H01L29/665H01L21/28052H01L21/28518
    • A method of forming a semiconductor device includes separating a semiconductor gate body from the outer surface of the substrate by a gate insulator layer, forming a conductive drain region in the outer surface of the substrate and spaced apart from the gate conductor body, and forming a conductive source region in the outer surface of the substrate and spaced apart from the gate conductor body opposite the conductive drain region to define a channel region in the substrate disposed inwardly from the gate body and the gate insulator layer. The method also includes depositing a metal buffer layer over the conductive source region and conductive drain region, depositing a metal layer over the metal buffer layer, and reacting the metal layer and metal buffer layer with the conductive source region and conductive drain region to form respective first and second silicide regions.
    • 形成半导体器件的方法包括:通过栅极绝缘体层将半导体栅极本体与衬底的外表面分离,在衬底的外表面中形成导电漏区,并与栅极导体本体间隔开,形成 导电源区域,并且与栅极导体本体相对的导电漏极区域隔开,以限定衬底中的沟道区,该沟道区域从栅极本体和栅极绝缘体层向内设置。 该方法还包括在导电源区和导电漏极区上沉积金属缓冲层,在金属缓冲层上沉积金属层,并使金属层和金属缓冲层与导电源区和导电漏区反应形成相应的 第一和第二硅化物区域。