会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 4. 发明申请
    • LIGHT EMITTING DIODE
    • 发光二极管
    • US20110316026A1
    • 2011-12-29
    • US13099127
    • 2011-05-02
    • Chang Youn KIMJoon Hee LEEJong Kyun YOUHong Chol LIMHwa Mok KIM
    • Chang Youn KIMJoon Hee LEEJong Kyun YOUHong Chol LIMHwa Mok KIM
    • H01L33/10
    • H01L33/10H01L33/025H01L2933/0091
    • An exemplary embodiment of the present invention relates to a light emitting diode (LED) including a substrate, a first nitride semiconductor layer arranged on the substrate, an active layer arranged on the first nitride semiconductor layer, a second nitride semiconductor layer arranged on the active layer, a third nitride semiconductor layer disposed between the first nitride semiconductor layer or between the second nitride semiconductor layer and the active layer, the third nitride semiconductor layer comprising a plurality of scatter elements within the third nitride semiconductor layer, and a distributed Bragg reflector (DBR) comprising a multi-layered structure, the substrate being arranged between the DBR and the third nitride semiconductor layer.
    • 本发明的示例性实施例涉及一种发光二极管(LED),其包括衬底,布置在衬底上的第一氮化物半导体层,布置在第一氮化物半导体层上的有源层,布置在有源层上的第二氮化物半导体层 层,设置在第一氮化物半导体层之间或第二氮化物半导体层和有源层之间的第三氮化物半导体层,在第三氮化物半导体层内包括多个散射元件的第三氮化物半导体层和分布式布拉格反射器 DBR),所述基板布置在所述DBR和所述第三氮化物半导体层之间。
    • 5. 发明申请
    • HIGH EFFICIENCY LIGHT EMITTING DIODE
    • 高效发光二极管
    • US20110227109A1
    • 2011-09-22
    • US12986774
    • 2011-01-07
    • Chang Youn KIMJoon Hee LEEJong Kyun YOUHong Chol LIM
    • Chang Youn KIMJoon Hee LEEJong Kyun YOUHong Chol LIM
    • H01L33/46H01L33/38
    • H01L33/22H01L33/20H01L33/382
    • Provided is a high-efficiency light emitting diode (LED) that includes: a support substrate; a semiconductor stack positioned on the support substrate, the semiconductor stack including a p-type compound semiconductor layer, an active layer, and an n-type compound semiconductor layer; a first electrode positioned between the support substrate and the semiconductor stack and in ohmic contact with the semiconductor stack; a first bonding pad positioned on a portion of the first electrode that is exposed outside of the semiconductor stack; and a second electrode positioned on the semiconductor stack. Protrusions are formed on exposed surfaces of the semiconductor stack. In addition, the second electrode may be positioned between the first electrode and the support substrate and contacted with the n-type compound semiconductor layer through openings of the semiconductor stack.
    • 提供了一种高效率发光二极管(LED),其包括:支撑基板; 位于所述支撑基板上的半导体堆叠,所述半导体堆叠包括p型化合物半导体层,有源层和n型化合物半导体层; 位于所述支撑衬底和所述半导体堆叠之间并与所述半导体堆叠欧姆接触的第一电极; 位于所述第一电极的暴露于所述半导体叠层外部的部分上的第一焊盘; 以及位于半导体堆叠上的第二电极。 突起形成在半导体堆叠的暴露表面上。 此外,第二电极可以位于第一电极和支撑衬底之间,并且通过半导体叠层的开口与n型化合物半导体层接触。
    • 9. 发明申请
    • HIGH EFFICIENCY LIGHT EMITTING DIODE AND METHOD OF FABRICATING THE SAME
    • 高效发光二极管及其制造方法
    • US20120119243A1
    • 2012-05-17
    • US13109669
    • 2011-05-17
    • Chang Yeon KIMDa Hye KIMHong Chul LIMJoon Hee LEEJong Kyun YOU
    • Chang Yeon KIMDa Hye KIMHong Chul LIMJoon Hee LEEJong Kyun YOU
    • H01L33/22
    • H01L33/382H01L33/007H01L33/0079H01L33/20H01L33/22H01L33/32H01L33/38H01L33/40H01L33/405H01L33/46H01L2224/48463H01L2224/73265
    • Exemplary embodiments of the present invention relate to a high-efficiency light emitting diode (LED). The LED according to an exemplary embodiment includes a substrate, a semiconductor stack arranged on the substrate, wherein the semiconductor stack has a p-type semiconductor layer, an active layer and an n-type semiconductor layer, a first metal layer interposed between the substrate and the semiconductor stack, the first metal layer ohmic-contacted with the semiconductor stack, a first electrode pad arranged on the semiconductor stack, an electrode extension extending from the first electrode pad, wherein the electrode extension has a contact region contacting the n-type semiconductor layer, a first insulating layer interposed between the substrate and the semiconductor stack, wherein the first insulating layer covers a surface region of the p-type semiconductor layer under the contact region of the electrode extension, and a second insulating layer interposed between the first electrode pad and the semiconductor stack.
    • 本发明的示例性实施例涉及一种高效率发光二极管(LED)。 根据示例性实施例的LED包括衬底,布置在衬底上的半导体堆叠,其中半导体堆叠具有p型半导体层,有源层和n型半导体层,插入在衬底之间的第一金属层 半导体堆叠,与半导体堆叠欧姆接触的第一金属层,布置在半导体堆叠上的第一电极焊盘,从第一电极焊盘延伸的电极延伸部,其中电极延伸部具有接触n型 半导体层,插入在所述基板和所述半导体堆叠之间的第一绝缘层,其中所述第一绝缘层覆盖所述电极延伸部的接触区域下方的所述p型半导体层的表面区域,以及插入在所述第一绝缘层之间的第二绝缘层 电极焊盘和半导体堆叠。