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1. 发明申请

US20110169040A1 LIGHT EMITTING DEVICE AND METHOD OF FABRICATING THE SAME 有权
标题翻译：发光装置及其制造方法
公开(公告)号：US20110169040A1
公开(公告)日：2011-07-14
申请号：US13073794
申请日：2011-03-28
申请人： Won Cheol SEO , Joon Hee LEE , Jong Kyun YOU , Chang Youn KIM , Jin Cheul SHIN , Hwa Mok KIM , Jang Woo LEE , Yeo Jin YOON , Jong Kyu KIM
发明人： Won Cheol SEO , Joon Hee LEE , Jong Kyun YOU , Chang Youn KIM , Jin Cheul SHIN , Hwa Mok KIM , Jang Woo LEE , Yeo Jin YOON , Jong Kyu KIM
IPC分类号： H01L33/60
CPC分类号： H01L33/60 , H01L25/0753 , H01L27/156 , H01L33/007 , H01L33/0079 , H01L33/06 , H01L33/22 , H01L33/32 , H01L33/46 , H01L33/62 , H01L2924/0002 , H01L2933/0058 , H01L2933/0066 , H01L2924/00
摘要： Disclosed are a light emitting device and a method of fabricating the same. The light emitting device comprises a substrate. A plurality of light emitting cells are disposed on top of the substrate to be spaced apart from one another. Each of the light emitting cells comprises a first upper semiconductor layer, an active layer, and a second lower semiconductor layer. Reflective metal layers are positioned between the substrate and the light emitting cells. The reflective metal layers are prevented from being exposed to the outside.
摘要翻译：公开了一种发光器件及其制造方法。发光器件包括衬底。多个发光单元设置在基板的顶部上以彼此间隔开。每个发光单元包括第一上半导体层，有源层和第二下半导体层。反射金属层位于基板和发光单元之间。防止反射金属层暴露于外部。

2. 发明申请

US20120007109A1 LIGHT EMITTING DEVICE AND METHOD OF FABRICATING THE SAME 有权
标题翻译：发光装置及其制造方法
公开(公告)号：US20120007109A1
公开(公告)日：2012-01-12
申请号：US13237778
申请日：2011-09-20
申请人： Won Cheol SEO , Joon Hee LEE , Jong Kyun YOU , Chang Youn KIM , Jin Cheul SHIN , Hwa Mok KIM , Jang Woo LEE , Yeo Jin YOON , Jong Kyu KIM
发明人： Won Cheol SEO , Joon Hee LEE , Jong Kyun YOU , Chang Youn KIM , Jin Cheul SHIN , Hwa Mok KIM , Jang Woo LEE , Yeo Jin YOON , Jong Kyu KIM
IPC分类号： H01L33/08 , H01L33/36
CPC分类号： H01L33/60 , H01L25/0753 , H01L27/156 , H01L33/007 , H01L33/0079 , H01L33/06 , H01L33/22 , H01L33/32 , H01L33/46 , H01L33/62 , H01L2924/0002 , H01L2933/0058 , H01L2933/0066 , H01L2924/00
摘要： Disclosed are a light emitting device and a method of fabricating the same. The light emitting device comprises a substrate. A plurality of light emitting cells are disposed on top of the substrate to be spaced apart from one another. Each of the light emitting cells comprises a first upper semiconductor layer, an active layer, and a second lower semiconductor layer. Reflective metal layers are positioned between the substrate and the light emitting cells. The reflective metal layers are prevented from being exposed to the outside.
摘要翻译：公开了一种发光器件及其制造方法。发光器件包括衬底。多个发光单元设置在基板的顶部上以彼此间隔开。每个发光单元包括第一上半导体层，有源层和第二下半导体层。反射金属层位于基板和发光单元之间。防止反射金属层暴露于外部。

3. 发明申请

US20100078656A1 LIGHT EMITTING DEVICE AND METHOD OF FABRICATING THE SAME 有权
标题翻译：发光装置及其制造方法
公开(公告)号：US20100078656A1
公开(公告)日：2010-04-01
申请号：US12570456
申请日：2009-09-30
申请人： Won Cheol SEO , Joon Hee Lee , Jong Kyun You , Chang Youn Kim , Jin Cheul Shin , Hwa Mok Kim , Jang Woo Lee , Yeo Jin Yoon , Jong Kyu Kim
发明人： Won Cheol SEO , Joon Hee Lee , Jong Kyun You , Chang Youn Kim , Jin Cheul Shin , Hwa Mok Kim , Jang Woo Lee , Yeo Jin Yoon , Jong Kyu Kim
IPC分类号： H01L33/00
CPC分类号： H01L33/60 , H01L25/0753 , H01L27/156 , H01L33/007 , H01L33/0079 , H01L33/06 , H01L33/22 , H01L33/32 , H01L33/46 , H01L33/62 , H01L2924/0002 , H01L2933/0058 , H01L2933/0066 , H01L2924/00
摘要： Disclosed are a light emitting device and a method of fabricating the same. The light emitting device comprises a substrate. A plurality of light emitting cells are disposed on top of the substrate to be spaced apart from one another. Each of the light emitting cells comprises a first upper semiconductor layer, an active layer, and a second lower semiconductor layer. Reflective metal layers are positioned between the substrate and the light emitting cells. The reflective metal layers are prevented from being exposed to the outside.
摘要翻译：公开了一种发光器件及其制造方法。发光器件包括衬底。多个发光单元设置在基板的顶部上以彼此间隔开。每个发光单元包括第一上半导体层，有源层和第二下半导体层。反射金属层位于基板和发光单元之间。防止反射金属层暴露于外部。

4. 发明申请

US20120135551A1 LIGHT EMITTING DIODE AND METHOD OF FABRICATING THE SAME 有权
标题翻译：发光二极管及其制造方法
公开(公告)号：US20120135551A1
公开(公告)日：2012-05-31
申请号：US13368122
申请日：2012-02-07
申请人： Won Cheol SEO , Chang Youn KIM , Yeo Jin YOON
发明人： Won Cheol SEO , Chang Youn KIM , Yeo Jin YOON
IPC分类号： H01L33/62 , H01L33/60
CPC分类号： H01L33/0079 , H01L25/0753 , H01L27/153 , H01L33/46 , H01L33/641 , H01L2224/49107
摘要： Disclosed herein is a light emitting diode. The light emitting diode includes a support substrate, semiconductor layers formed on the support substrate, and a metal pattern located between the support substrate and the lower semiconductor layer. The semiconductor layers include an upper semiconductor layer of a first conductive type, an active layer, and a lower semiconductor layer of a second conductive type. The semiconductor layers are grown on a sacrificial substrate and the support substrate is homogeneous with the sacrificial substrate.
摘要翻译：这里公开了一种发光二极管。发光二极管包括支撑衬底，形成在支撑衬底上的半导体层以及位于支撑衬底和下半导体层之间的金属图案。半导体层包括第一导电类型的上半导体层，有源层和第二导电类型的下半导体层。半导体层在牺牲衬底上生长，并且支撑衬底与牺牲衬底是均匀的。

5. 发明申请

US20110062459A1 AC LIGHT EMITTING DIODE HAVING FULL-WAVE LIGHT EMITTING CELL AND HALF-WAVE LIGHT EMITTING CELL 有权
标题翻译：具有全波发光单元和半波发光单元的交流发光二极管
公开(公告)号：US20110062459A1
公开(公告)日：2011-03-17
申请号：US12882406
申请日：2010-09-15
申请人： Dae Sung KAL , Won Cheol SEO , Jang Woo LEE , Jin Cheol SHIN , Jong Kyu KIM , Sang Ki JIN , So Ra LEE
发明人： Dae Sung KAL , Won Cheol SEO , Jang Woo LEE , Jin Cheol SHIN , Jong Kyu KIM , Sang Ki JIN , So Ra LEE
IPC分类号： H01L33/08
CPC分类号： H01L27/156 , H01L33/62 , H01L2924/0002 , H01L2924/00
摘要： The present invention discloses an alternating current (AC) light emitting diode (LED) having half-wave light emitting cells and full-wave light emitting cells. The AC LED has a plurality of light emitting cells electrically connected between bonding pads on a single substrate. The AC LED includes a first row of half-wave light emitting cells each having an anode terminal and a cathode terminal, a second row of full-wave light emitting cells each having an anode terminal and a cathode terminal, and a third row of half-wave light emitting cells each having an anode terminal and a cathode terminal. In the AC LED, the second row is arranged between the first row and the third row, and the third row includes a pair of light emitting cells that share a cathode terminal with each other. The cathode terminal shared by the pair of light emitting cells in the third row is electrically connected to the anode terminal of a corresponding light emitting cell of the half-wave light emitting cells in the first row through a conductor that is electrically insulated from the full-wave light emitting cells in the second row.
摘要翻译：本发明公开了一种具有半波发光单元和全波发光单元的交流（AC）发光二极管（LED）。 AC LED具有电连接在单个基板上的焊盘之间的多个发光单元。 AC LED包括具有阳极端子和阴极端子的第一排半波发光单元，具有阳极端子和阴极端子的第二排全波发光单元，以及第三排半波发光单元每个具有阳极端子和阴极端子的发光单元。在AC LED中，第二行布置在第一行和第三行之间，第三行包括彼此共享阴极端子的一对发光单元。由第三行中的一对发光单元共享的阴极端子通过与整体电绝缘的导体电连接到第一行中的半波发光单元的对应的发光单元的阳极端子 - 第二排发光单元。

6. 发明申请

US20130009197A1 LIGHT EMITTING DIODE HAVING ELECTRODE PADS 有权
标题翻译：具有电极垫的发光二极管
公开(公告)号：US20130009197A1
公开(公告)日：2013-01-10
申请号：US13617810
申请日：2012-09-14
申请人： Won Cheol SEO , Dae Sung KAL , Kyung Hee YE , Kyoung Wan KIM , Yeo Jin YOON
发明人： Won Cheol SEO , Dae Sung KAL , Kyung Hee YE , Kyoung Wan KIM , Yeo Jin YOON
IPC分类号： H01L33/36
CPC分类号： H01L33/387 , H01L33/08 , H01L33/20 , H01L33/32 , H01L33/38 , H01L33/385 , H01L33/42 , H01L33/44 , H01L33/62 , H01L2924/0002 , H01L2933/0016 , H01L2924/00
摘要： Exemplary embodiments of the present invention relate to a including a substrate, a first conductive type semiconductor layer arranged on the substrate, a second conductive type semiconductor layer arranged on the first conductive type semiconductor layer, an active layer disposed between the first conductive type semiconductor layer and the second conductive type semiconductor layer, a first electrode pad electrically connected to the first conductive type semiconductor layer, a second electrode pad arranged on the second conductive type semiconductor layer, an insulation layer disposed between the second conductive type semiconductor layer and the second electrode pad, and at least one upper extension electrically connected to the second electrode pad, the at least one upper extension being electrically connected to the second conductive type semiconductor layer.
摘要翻译：本发明的示例性实施例涉及包括基板，布置在基板上的第一导电类型半导体层，布置在第一导电类型半导体层上的第二导电类型半导体层，设置在第一导电类型半导体层之间的有源层和第二导电型半导体层，电连接到第一导电类型半导体层的第一电极焊盘，布置在第二导电类型半导体层上的第二电极焊盘，设置在第二导电类型半导体层和第二电极之间的绝缘层垫，以及电连接到第二电极焊盘的至少一个上延伸部，所述至少一个上延伸部电连接到第二导电型半导体层。

7. 发明申请

US20110114990A1 LIGHT EMITTING DIODE HAVING ELECTRODE EXTENSIONS FOR CURRENT SPREADING 有权
标题翻译：具有电极扩展的发光二极管进行电流扩展
公开(公告)号：US20110114990A1
公开(公告)日：2011-05-19
申请号：US12941536
申请日：2010-11-08
申请人： Kyoung Wan KIM , Soo Young MOON , Kyu Ho LEE , Yeo Jin YOON , Jeong Hee YANG , Won Cheol SEO
发明人： Kyoung Wan KIM , Soo Young MOON , Kyu Ho LEE , Yeo Jin YOON , Jeong Hee YANG , Won Cheol SEO
IPC分类号： H01L33/62
CPC分类号： H01L33/38 , H01L33/20
摘要： An exemplary embodiment of the present invention discloses a light emitting diode including a substrate having a first edge and a second edge opposite to each other, a light emitting structure disposed on the substrate, the light emitting structure including a first semiconductor layer and a second semiconductor layer, a plurality of first electrode pads arranged on an upper surface of the first semiconductor layer, the first electrode pads arranged in a vicinity of the first edge, a plurality of second electrode pads arranged on the second semiconductor layer, the second electrode pads arranged in a vicinity of the second edge, a plurality of first extensions, each first extension extending from a first electrode pad, and a plurality of second extensions, each second extension extending from a second electrode pad. The first extensions include intrusion parts extending in a direction from the first edge to the second edge, wherein the intrusion parts are spaced apart from each other and not connecting with the second electrode pads. Further, the second extensions include intrusion parts extending in a direction from the second edge to the first edge, wherein the first extension intrusion parts each extend into a region between two of the second extension intrusion parts.
摘要翻译：本发明的一个示例性实施例公开了一种发光二极管，其包括具有彼此相对的第一边缘和第二边缘的基板，设置在基板上的发光结构，所述发光结构包括第一半导体层和第二半导体布置在第一半导体层的上表面上的多个第一电极焊盘，布置在第一边缘附近的第一电极焊盘，布置在第二半导体层上的多个第二电极焊盘，布置在第二半导体层上的第二电极焊盘在第二边缘附近，多个第一延伸部，每个第一延伸部从第一电极焊盘延伸，以及多个第二延伸部，每个第二延伸部从第二电极焊盘延伸。第一延伸部包括在从第一边缘到第二边缘的方向上延伸的侵入部分，其中入侵部分彼此间隔开并且不与第二电极焊盘连接。此外，第二延伸部包括在从第二边缘到第一边缘的方向上延伸的侵入部分，其中第一延伸入侵部分各自延伸到两个第二延伸入侵部分之间的区域中。

8. 发明申请

US20110163346A1 LIGHT EMITTING DIODE HAVING ELECTRODE PADS 有权
标题翻译：具有电极垫的发光二极管
公开(公告)号：US20110163346A1
公开(公告)日：2011-07-07
申请号：US12974917
申请日：2010-12-21
申请人： Won Cheol SEO , Dae Sung KAL , Kyung Hee YE , Kyoung Wan KIM , Yeo Jin YOON
发明人： Won Cheol SEO , Dae Sung KAL , Kyung Hee YE , Kyoung Wan KIM , Yeo Jin YOON
IPC分类号： H01L33/42 , H01L33/36
CPC分类号： H01L33/387 , H01L33/08 , H01L33/20 , H01L33/32 , H01L33/38 , H01L33/385 , H01L33/42 , H01L33/44 , H01L33/62 , H01L2924/0002 , H01L2933/0016 , H01L2924/00
摘要： Exemplary embodiments of the present invention relate to a including a substrate, a first conductive type semiconductor layer arranged on the substrate, a second conductive type semiconductor layer arranged on the first conductive type semiconductor layer, an active layer disposed between the first conductive type semiconductor layer and the second conductive type semiconductor layer, a first electrode pad electrically connected to the first conductive type semiconductor layer, a second electrode pad arranged on the second conductive type semiconductor layer, an insulation layer disposed between the second conductive type semiconductor layer and the second electrode pad, and at least one upper extension electrically connected to the second electrode pad, the at least one upper extension being electrically connected to the second conductive type semiconductor layer.
摘要翻译：本发明的示例性实施例涉及包括基板，布置在基板上的第一导电类型半导体层，布置在第一导电类型半导体层上的第二导电类型半导体层，设置在第一导电类型半导体层之间的有源层和第二导电型半导体层，电连接到第一导电类型半导体层的第一电极焊盘，布置在第二导电类型半导体层上的第二电极焊盘，设置在第二导电类型半导体层和第二电极之间的绝缘层垫，以及电连接到第二电极焊盘的至少一个上延伸部，所述至少一个上延伸部电连接到第二导电型半导体层。

9. 发明申请

US20110156070A1 LIGHT EMITTING DIODE 有权
标题翻译：发光二极管
公开(公告)号：US20110156070A1
公开(公告)日：2011-06-30
申请号：US12974605
申请日：2010-12-21
申请人： Yeo Jin YOON , Won Cheol SEO
发明人： Yeo Jin YOON , Won Cheol SEO
IPC分类号： H01L33/00
CPC分类号： H01L33/46 , H01L33/385 , H01L33/405 , H01L33/42
摘要： The present invention provides a light emitting diode including a lower semiconductor layer formed on a substrate; an upper semiconductor layer disposed above the lower semiconductor layer, exposing an edge region of the lower semiconductor layer; a first electrode formed on the upper semiconductor layer; an insulation layer interposed between the first electrode and the upper semiconductor layer, to supply electric current to the lower semiconductor layer; a second electrode formed on another region of the upper semiconductor layer, to supply electric current to the upper semiconductor layer. The first electrode includes an electrode pad disposed on the upper semiconductor layer and an extension extending from the electrode pad to the exposed lower semiconductor layer. The insulation layer may have a distributed Bragg reflector structure.
摘要翻译：本发明提供了一种发光二极管，其包括形成在基板上的下半导体层; 上半导体层，设置在所述下半导体层上方，暴露所述下半导体层的边缘区域; 形成在上半导体层上的第一电极; 介于所述第一电极和所述上半导体层之间的绝缘层，以向所述下半导体层提供电流; 形成在上半导体层的另一区域上的第二电极，以向上半导体层提供电流。第一电极包括设置在上半导体层上的电极焊盘和从电极焊盘延伸到暴露的下半导体层的延伸部。绝缘层可以具有分布式布拉格反射器结构。

10. 发明申请

US20110175131A1 LIGHT EMITTING DEVICE AND METHOD FOR FABRICATING THE SAME 有权
标题翻译：发光装置及其制造方法
公开(公告)号：US20110175131A1
公开(公告)日：2011-07-21
申请号：US13076330
申请日：2011-03-30
申请人： Won Cheol SEO , Yun Goo KIM , Chang Youn KIM
发明人： Won Cheol SEO , Yun Goo KIM , Chang Youn KIM
IPC分类号： H01L33/00
CPC分类号： H01L33/0079 , H01L33/387 , H01L33/46 , H01L33/60 , H01L33/62 , H01L2924/0002 , H01L2924/00
摘要： There is provided a light emitting device, which comprises compound semiconductor layers including a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer; a metal reflection layer formed on a region of the second conductive semiconductor layer; an insulating structure formed at least in a boundary region of the second conductive semiconductor layer; a metal material structure formed to cover the second conductive semiconductor layer having the metal reflection layer and the insulating structure formed; and a substrate bonded to the metal material structure, wherein the boundary region of the second conductive semiconductor layer includes an outer region of the second conductive semiconductor layer along an outer circumference of the second conductive semiconductor layer.
摘要翻译：提供一种发光器件，其包括包括第一导电半导体层，有源层和第二导电半导体层的化合物半导体层; 形成在所述第二导电半导体层的区域上的金属反射层; 至少形成在所述第二导电半导体层的边界区域中的绝缘结构; 形成为覆盖形成有金属反射层和绝缘结构的第二导电半导体层的金属材料结构体; 以及与所述金属材料结构接合的基板，其中所述第二导电半导体层的边界区域沿着所述第二导电半导体层的外周包括所述第二导电半导体层的外部区域。

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