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1. 发明申请

US20060121816A1 Method of manufacturing organic light emitting device by using mirror shaped target sputtering apparatus 审中-公开
标题翻译：使用镜像靶溅射装置制造有机发光器件的方法
公开(公告)号：US20060121816A1
公开(公告)日：2006-06-08
申请号：US11171498
申请日：2005-07-01
申请人： Kyu-Sung Lee , Han-Ki Kim , Do-Geun Kim , Myung-Soo Huh , Seok-Heon Jeong
发明人： Kyu-Sung Lee , Han-Ki Kim , Do-Geun Kim , Myung-Soo Huh , Seok-Heon Jeong
IPC分类号： H01J9/24 , H01J9/00
CPC分类号： H01L51/5203 , C23C14/352 , H01L51/0008 , H01L51/0021
摘要： A method of manufacturing an organic light emitting device by using a facing target sputtering apparatus is provided. The method includes forming a first electrode on a substrate; forming an organic film on the first electrode; and forming a second electrode on the organic film by using a facing target sputtering apparatus. Accordingly, an electrode film is formed on the organic light emitting device at a low temperature without deterioration of the electrode film due to plasma, it is possible to improve light emitting efficiency and electro-optical characteristics of the organic light emitting device.
摘要翻译：提供了一种通过使用面对靶溅射装置制造有机发光器件的方法。该方法包括在基板上形成第一电极; 在第一电极上形成有机膜; 以及通过使用面对靶溅射装置在所述有机膜上形成第二电极。因此，在低温下在有机发光器件上形成电极膜，而不会由于等离子体而导致电极膜的劣化，可以提高有机发光器件的发光效率和电光特性。

2. 发明申请

US20050194475A1 Inductively coupled plasma chemical vapor deposition apparatus 审中-公开
标题翻译：电感耦合等离子体化学气相沉积装置
公开(公告)号：US20050194475A1
公开(公告)日：2005-09-08
申请号：US11070232
申请日：2005-03-03
申请人： Han-Ki Kim , Myung-Soo Huh , Myoung-Soo Kim , Kyu-Sung Lee , Seok-Heon Jeong
发明人： Han-Ki Kim , Myung-Soo Huh , Myoung-Soo Kim , Kyu-Sung Lee , Seok-Heon Jeong
IPC分类号： C23C16/507 , B05B5/025 , C23C16/455 , H01L21/285 , H01L21/31
CPC分类号： H01J37/3244 , C23C16/042 , C23C16/45563 , C23C16/507 , H01J37/321 , H01J37/3211
摘要： An inductively coupled plasma chemical vapor deposition apparatus comprises a reaction gas spray nozzle capable of evenly spraying reaction gas onto a rectangular substrate, a radio frequency (RF) antenna capable of uniformly forming a plasma source in a rectangular shape, and a rectangular mask maintained at a low temperature so as to uniformly form a thin film on the rectangular substrate used for a flat panel display device.
摘要翻译：电感耦合等离子体化学气相沉积装置包括能够将反应气体均匀地喷射到矩形基板上的反应气体喷嘴，能够均匀地形成矩形形状的等离子体源的射频（RF）天线和维持在低温，以便在用于平板显示装置的矩形基板上均匀地形成薄膜。

3. 发明申请

US20060130766A1 Deposition source and deposition apparatus including deposition source 审中-公开
标题翻译：沉积源和沉积设备包括沉积源
公开(公告)号：US20060130766A1
公开(公告)日：2006-06-22
申请号：US11289631
申请日：2005-11-30
申请人： Do-Geun Kim , Jae-Hong Ahn , Kwan-Seop Song , Myung-Soo Huh , Seok-Heon Jeong
发明人： Do-Geun Kim , Jae-Hong Ahn , Kwan-Seop Song , Myung-Soo Huh , Seok-Heon Jeong
IPC分类号： C23C16/00
CPC分类号： C23C14/12 , C23C14/24 , C23C14/243
摘要： A deposition source having a constant deposition rate and high reproducibility, and a deposition apparatus including the deposition source includes: a heating chamber having a linear opening portion; and a cover including a plurality of holes and attached to the linear opening portion of the heating chamber. The distances between the holes formed on the cover vary along a long side direction of the linear opening portion of the heating chamber. The number of holes formed on the cover along a long side direction of the linear opening portion of the heating chamber can also vary.
摘要翻译：具有恒定沉积速率和高再现性的沉积源，以及包括沉积源的沉积设备包括：加热室，其具有线性开口部分; 以及包括多个孔并且附接到加热室的线性开口部分的盖。形成在盖上的孔之间的距离沿着加热室的线性开口部分的长边方向变化。沿着加热室的线性开口部的长边方向形成在盖上的孔的数量也可以变化。

4. 发明申请

US20060172537A1 Method of forming thin film and method of fabricating OLED 审中-公开
标题翻译：形成薄膜的方法和制造OLED的方法
公开(公告)号：US20060172537A1
公开(公告)日：2006-08-03
申请号：US11171459
申请日：2005-07-01
申请人： Do-Geun Kim , Han-Ki Kim , Myung-Soo Huh
发明人： Do-Geun Kim , Han-Ki Kim , Myung-Soo Huh
IPC分类号： H01L21/44
CPC分类号： H01L51/0021 , C23C14/14 , C23C14/243 , H01L51/0003 , H01L51/5221
摘要： A method of forming a thin film and a method of fabricating an organic light emitting display device are provided. The method includes depositing a film formation material mixed with a deposition material and an additive material to form the thin film, and the additive material has a eutectic melting point with the deposition material. Accordingly, it is possible to form the thin film at a quite lower temperature compared to a conventional case of forming the thin film using only a deposition material.
摘要翻译：提供一种形成薄膜的方法和制造有机发光显示装置的方法。该方法包括沉积与沉积材料和添加剂材料混合的成膜材料以形成薄膜，并且添加剂材料与沉积材料具有共晶熔点。因此，与仅使用沉积材料形成薄膜的常规情况相比，可以在相当低的温度下形成薄膜。

5. 发明申请

US20060269671A1 Catalytic enhanced chemical vapor deposition apparatus having efficient filament arrangement structure 有权
标题翻译：催化增强化学气相沉积装置具有有效的灯丝排列结构
公开(公告)号：US20060269671A1
公开(公告)日：2006-11-30
申请号：US11439350
申请日：2006-05-24
申请人： Han-Ki Kim , Myung-Soo Huh , Myoung-Soo Kim , Kyu-Sung Lee
发明人： Han-Ki Kim , Myung-Soo Huh , Myoung-Soo Kim , Kyu-Sung Lee
IPC分类号： C23C16/00
CPC分类号： C23C16/45565 , C23C16/44
摘要： The present invention provides a catalytic enhanced chemical vapor deposition (CVD) apparatus capable of maximizing efficiency of gas use to 80% or more, and obtaining a uniform thin film by efficiently arranging filaments mounted on a shower head of the catalytic enhanced CVD apparatus, thereby uniformly decomposing a deposition source gas. The present invention also provides a method for fabricating an organic electroluminescent device with an inorganic film formed through the catalytic enhanced CVD apparatus.
摘要翻译：本发明提供一种催化增强化学气相沉积（CVD）装置，其能够将气体使用效率最大化到80％以上，并且通过有效地布置安装在催化增强CVD装置的喷头上的细丝，获得均匀的薄膜，由此均匀分解沉积源气体。本发明还提供一种通过催化增强CVD装置形成无机膜的有机电致发光器件的制造方法。

6. 发明授权

US08383208B2 Method of fabricating organic light emitting device 有权
标题翻译：制造有机发光装置的方法
公开(公告)号：US08383208B2
公开(公告)日：2013-02-26
申请号：US11400474
申请日：2006-04-06
申请人： Han-Ki Kim , Myung-Soo Huh , Myoung-Soo Kim , Kyu-Sung Lee
发明人： Han-Ki Kim , Myung-Soo Huh , Myoung-Soo Kim , Kyu-Sung Lee
IPC分类号： H05H1/24 , C23C16/00 , H05B3/00
CPC分类号： C23C16/45565 , C23C16/45574 , C23C16/5096 , H01L51/5253
摘要： Methods of fabricating an organic light emitting device using plasma and/or thermal decomposition are provided. An insulating layer is formed by reacting first and second radicals. The first radical is formed by passing a first gas through a plasma generating region and a heating body, and the second radical is formed by passing a second gas through the heating body. The methods improve the characteristics of the resulting insulating layer and increase the use efficiency of the source gas by substantially decomposing the source gas. The insulating layer can be a passivation layer formed on an organic light emitting device. The methods use plasma apparatuses such as an inductively coupled plasma chemical vapor deposition (ICP-CVD) apparatuses or plasma enhanced chemical vapor deposition (PECVD) apparatuses.
摘要翻译：提供了使用等离子体和/或热分解制造有机发光器件的方法。通过使第一和第二自由基反应形成绝缘层。通过使第一气体通过等离子体生成区域和加热体而形成第一基团，通过使第二气体通过加热体而形成第二自由基。该方法通过基本分解源气体来改善所得绝缘层的特性并提高源气体的使用效率。绝缘层可以是形成在有机发光器件上的钝化层。该方法使用诸如感应耦合等离子体化学气相沉积（ICP-CVD）装置或等离子体增强化学气相沉积（PECVD）装置之类的等离子体装置。

7. 发明授权

US08006639B2 Catalytic enhanced chemical vapor deposition apparatus having efficient filament arrangement structure 有权
标题翻译：催化增强化学气相沉积装置具有有效的灯丝排列结构
公开(公告)号：US08006639B2
公开(公告)日：2011-08-30
申请号：US11439350
申请日：2006-05-24
申请人： Han-Ki Kim , Myung-Soo Huh , Myoung-Soo Kim , Kyu-Sung Lee
发明人： Han-Ki Kim , Myung-Soo Huh , Myoung-Soo Kim , Kyu-Sung Lee
IPC分类号： C23C16/00
CPC分类号： C23C16/45565 , C23C16/44
摘要： The present invention provides a catalytic enhanced chemical vapor deposition (CVD) apparatus capable of maximizing efficiency of gas use to 80% or more, and obtaining a uniform thin film by efficiently arranging filaments mounted on a shower head of the catalytic enhanced CVD apparatus, thereby uniformly decomposing a deposition source gas. The present invention also provides a method for fabricating an organic electroluminescent device with an inorganic film formed through the catalytic enhanced CVD apparatus.
摘要翻译：本发明提供一种催化增强化学气相沉积（CVD）装置，其能够将气体使用效率最大化到80％以上，并且通过有效地布置安装在催化增强CVD装置的喷头上的细丝，获得均匀的薄膜，由此均匀分解沉积源气体。本发明还提供一种通过催化增强CVD装置形成无机膜的有机电致发光器件的制造方法。

8. 发明申请

US20060228827A1 Method of fabricating organic light emitting device 有权
公开(公告)号：US20060228827A1
公开(公告)日：2006-10-12
申请号：US11400474
申请日：2006-04-06
申请人： Han-Ki Kim , Myung-Soo Huh , Myoung-Soo Kim , Kyu-Sung Lee
发明人： Han-Ki Kim , Myung-Soo Huh , Myoung-Soo Kim , Kyu-Sung Lee
IPC分类号： H01L21/00 , H01L51/40
CPC分类号： C23C16/45565 , C23C16/45574 , C23C16/5096 , H01L51/5253
摘要： Methods of fabricating an organic light emitting device using plasma and/or thermal decomposition are provided. An insulating layer is formed by reacting first and second radicals. The first radical is formed by passing a first gas through a plasma generating region and a heating body, and the second radical is formed by passing a second gas through the heating body. The methods improve the characteristics of the resulting insulating layer and increase the use efficiency of the source gas by substantially decomposing the source gas. The insulating layer can be a passivation layer formed on an organic light emitting device. The methods use plasma apparatuses such as an inductively coupled plasma chemical vapor deposition (ICP-CVD) apparatuses or plasma enhanced chemical vapor deposition (PECVD) apparatuses.

9. 发明申请

US20130037406A1 Sputtering apparatus 审中-公开
标题翻译：溅射装置
公开(公告)号：US20130037406A1
公开(公告)日：2013-02-14
申请号：US13506235
申请日：2012-04-04
申请人： Myung-Soo Huh
发明人： Myung-Soo Huh
IPC分类号： C23C14/34 , C23C14/08 , C23C14/35
CPC分类号： C23C14/0042 , C23C14/086 , C23C14/35
摘要： A sputtering device for depositing a deposition material from a deposition source to a deposition target, wherein a sputtering pressure between the deposition source and the deposition target is from about 6.70×10−2 Pa to about 1.34×10−1 Pa.
摘要翻译：一种用于将沉积材料从沉积源沉积到沉积靶的溅射装置，其中沉积源和沉积靶之间的溅射压力为约6.70×10 -2 Pa至约1.34×10 -1 Pa。

10. 发明授权

US09390841B2 Vapor deposition apparatus, method of forming thin film using the same and method of manufacturing organic light-emitting display apparatus 有权
标题翻译：蒸镀装置，使用该薄膜的薄膜的制造方法以及制造有机发光显示装置的方法
公开(公告)号：US09390841B2
公开(公告)日：2016-07-12
申请号：US13795399
申请日：2013-03-12
申请人： Jin-Kwang Kim , Seung-Yong Song , Myung-Soo Huh , Suk-Won Jung , Choel-Min Jang , Jae-Hyun Kim , Sung-Chul Kim
发明人： Jin-Kwang Kim , Seung-Yong Song , Myung-Soo Huh , Suk-Won Jung , Choel-Min Jang , Jae-Hyun Kim , Sung-Chul Kim
IPC分类号： C23C16/00 , H01B13/30 , C23C14/24 , C23C14/56 , C23C16/44 , C23C16/455
CPC分类号： H01L51/0021 , C23C14/24 , C23C14/564 , C23C16/4401 , C23C16/4412 , C23C16/45536 , C23C16/45544 , C23C16/45551 , C23C16/50 , H01B13/30 , H01L27/3244 , H01L51/5206 , H01L51/5221 , H01L51/5253 , H01L51/56 , H01L2227/323
摘要： A vapor deposition apparatus in which a deposition process is performed by moving a substrate, the vapor deposition apparatus including a supply unit that injects at least one raw material gas towards the substrate, and a blocking gas flow generation unit that is disposed corresponding to the supply unit and generates a gas-flow that blocks a flow of the raw material gas.
摘要翻译：一种气相沉积装置，其中通过移动基板进行沉积工艺，所述气相沉积设备包括向基板注入至少一种原料气体的供应单元和对应于供应设置的阻塞气体流产生单元并且产生阻挡原料气体流动的气流。

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