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1. 发明申请

US20060228827A1 Method of fabricating organic light emitting device 有权
公开(公告)号：US20060228827A1
公开(公告)日：2006-10-12
申请号：US11400474
申请日：2006-04-06
申请人： Han-Ki Kim , Myung-Soo Huh , Myoung-Soo Kim , Kyu-Sung Lee
发明人： Han-Ki Kim , Myung-Soo Huh , Myoung-Soo Kim , Kyu-Sung Lee
IPC分类号： H01L21/00 , H01L51/40
CPC分类号： C23C16/45565 , C23C16/45574 , C23C16/5096 , H01L51/5253
摘要： Methods of fabricating an organic light emitting device using plasma and/or thermal decomposition are provided. An insulating layer is formed by reacting first and second radicals. The first radical is formed by passing a first gas through a plasma generating region and a heating body, and the second radical is formed by passing a second gas through the heating body. The methods improve the characteristics of the resulting insulating layer and increase the use efficiency of the source gas by substantially decomposing the source gas. The insulating layer can be a passivation layer formed on an organic light emitting device. The methods use plasma apparatuses such as an inductively coupled plasma chemical vapor deposition (ICP-CVD) apparatuses or plasma enhanced chemical vapor deposition (PECVD) apparatuses.

2. 发明申请

US20060269671A1 Catalytic enhanced chemical vapor deposition apparatus having efficient filament arrangement structure 有权
标题翻译：催化增强化学气相沉积装置具有有效的灯丝排列结构
公开(公告)号：US20060269671A1
公开(公告)日：2006-11-30
申请号：US11439350
申请日：2006-05-24
申请人： Han-Ki Kim , Myung-Soo Huh , Myoung-Soo Kim , Kyu-Sung Lee
发明人： Han-Ki Kim , Myung-Soo Huh , Myoung-Soo Kim , Kyu-Sung Lee
IPC分类号： C23C16/00
CPC分类号： C23C16/45565 , C23C16/44
摘要： The present invention provides a catalytic enhanced chemical vapor deposition (CVD) apparatus capable of maximizing efficiency of gas use to 80% or more, and obtaining a uniform thin film by efficiently arranging filaments mounted on a shower head of the catalytic enhanced CVD apparatus, thereby uniformly decomposing a deposition source gas. The present invention also provides a method for fabricating an organic electroluminescent device with an inorganic film formed through the catalytic enhanced CVD apparatus.
摘要翻译：本发明提供一种催化增强化学气相沉积（CVD）装置，其能够将气体使用效率最大化到80％以上，并且通过有效地布置安装在催化增强CVD装置的喷头上的细丝，获得均匀的薄膜，由此均匀分解沉积源气体。本发明还提供一种通过催化增强CVD装置形成无机膜的有机电致发光器件的制造方法。

3. 发明申请

US20050194475A1 Inductively coupled plasma chemical vapor deposition apparatus 审中-公开
标题翻译：电感耦合等离子体化学气相沉积装置
公开(公告)号：US20050194475A1
公开(公告)日：2005-09-08
申请号：US11070232
申请日：2005-03-03
申请人： Han-Ki Kim , Myung-Soo Huh , Myoung-Soo Kim , Kyu-Sung Lee , Seok-Heon Jeong
发明人： Han-Ki Kim , Myung-Soo Huh , Myoung-Soo Kim , Kyu-Sung Lee , Seok-Heon Jeong
IPC分类号： C23C16/507 , B05B5/025 , C23C16/455 , H01L21/285 , H01L21/31
CPC分类号： H01J37/3244 , C23C16/042 , C23C16/45563 , C23C16/507 , H01J37/321 , H01J37/3211
摘要： An inductively coupled plasma chemical vapor deposition apparatus comprises a reaction gas spray nozzle capable of evenly spraying reaction gas onto a rectangular substrate, a radio frequency (RF) antenna capable of uniformly forming a plasma source in a rectangular shape, and a rectangular mask maintained at a low temperature so as to uniformly form a thin film on the rectangular substrate used for a flat panel display device.
摘要翻译：电感耦合等离子体化学气相沉积装置包括能够将反应气体均匀地喷射到矩形基板上的反应气体喷嘴，能够均匀地形成矩形形状的等离子体源的射频（RF）天线和维持在低温，以便在用于平板显示装置的矩形基板上均匀地形成薄膜。

4. 发明授权

US08383208B2 Method of fabricating organic light emitting device 有权
标题翻译：制造有机发光装置的方法
公开(公告)号：US08383208B2
公开(公告)日：2013-02-26
申请号：US11400474
申请日：2006-04-06
申请人： Han-Ki Kim , Myung-Soo Huh , Myoung-Soo Kim , Kyu-Sung Lee
发明人： Han-Ki Kim , Myung-Soo Huh , Myoung-Soo Kim , Kyu-Sung Lee
IPC分类号： H05H1/24 , C23C16/00 , H05B3/00
CPC分类号： C23C16/45565 , C23C16/45574 , C23C16/5096 , H01L51/5253
摘要： Methods of fabricating an organic light emitting device using plasma and/or thermal decomposition are provided. An insulating layer is formed by reacting first and second radicals. The first radical is formed by passing a first gas through a plasma generating region and a heating body, and the second radical is formed by passing a second gas through the heating body. The methods improve the characteristics of the resulting insulating layer and increase the use efficiency of the source gas by substantially decomposing the source gas. The insulating layer can be a passivation layer formed on an organic light emitting device. The methods use plasma apparatuses such as an inductively coupled plasma chemical vapor deposition (ICP-CVD) apparatuses or plasma enhanced chemical vapor deposition (PECVD) apparatuses.
摘要翻译：提供了使用等离子体和/或热分解制造有机发光器件的方法。通过使第一和第二自由基反应形成绝缘层。通过使第一气体通过等离子体生成区域和加热体而形成第一基团，通过使第二气体通过加热体而形成第二自由基。该方法通过基本分解源气体来改善所得绝缘层的特性并提高源气体的使用效率。绝缘层可以是形成在有机发光器件上的钝化层。该方法使用诸如感应耦合等离子体化学气相沉积（ICP-CVD）装置或等离子体增强化学气相沉积（PECVD）装置之类的等离子体装置。

5. 发明授权

US08006639B2 Catalytic enhanced chemical vapor deposition apparatus having efficient filament arrangement structure 有权
标题翻译：催化增强化学气相沉积装置具有有效的灯丝排列结构
公开(公告)号：US08006639B2
公开(公告)日：2011-08-30
申请号：US11439350
申请日：2006-05-24
申请人： Han-Ki Kim , Myung-Soo Huh , Myoung-Soo Kim , Kyu-Sung Lee
发明人： Han-Ki Kim , Myung-Soo Huh , Myoung-Soo Kim , Kyu-Sung Lee
IPC分类号： C23C16/00
CPC分类号： C23C16/45565 , C23C16/44
摘要： The present invention provides a catalytic enhanced chemical vapor deposition (CVD) apparatus capable of maximizing efficiency of gas use to 80% or more, and obtaining a uniform thin film by efficiently arranging filaments mounted on a shower head of the catalytic enhanced CVD apparatus, thereby uniformly decomposing a deposition source gas. The present invention also provides a method for fabricating an organic electroluminescent device with an inorganic film formed through the catalytic enhanced CVD apparatus.
摘要翻译：本发明提供一种催化增强化学气相沉积（CVD）装置，其能够将气体使用效率最大化到80％以上，并且通过有效地布置安装在催化增强CVD装置的喷头上的细丝，获得均匀的薄膜，由此均匀分解沉积源气体。本发明还提供一种通过催化增强CVD装置形成无机膜的有机电致发光器件的制造方法。

6. 发明申请

US20060254513A1 Catalyst enhanced chemical vapor deposition apparatus and deposition method using the same 有权
标题翻译：催化剂增强化学气相沉积装置及其沉积方法
公开(公告)号：US20060254513A1
公开(公告)日：2006-11-16
申请号：US11405552
申请日：2006-04-18
申请人： Hee-Cheol Kang , Kazuo Furuno , Han-Ki Kim , Myoung-Soo Kim
发明人： Hee-Cheol Kang , Kazuo Furuno , Han-Ki Kim , Myoung-Soo Kim
IPC分类号： C23C16/00
CPC分类号： C23C16/44 , C23C16/46
摘要： A catalyst-enhanced chemical vapor deposition (CECVD) apparatus and a deposition method, in which tension is applied to a catalyst wire in order to prevent the catalyst wire from sagging due to thermal deformation, and additional gas is used to prevent foreign material from being generated. The CECVD apparatus may be constructed with a process chamber, a showerhead to introduce process gas into process chamber, a tensile catalyst wire structure provided in the process chamber to decompose the gas introduced from the showerhead, and a substrate on which the gas decomposed by the catalyst wire structure is deposited, so that the tension is applied to a catalyst wire in order to prevent the catalyst wire from sagging due to thermal deformation, and additional gas is used to prevent foreign material from being generated, thereby eliminating occurrences of non-uniform temperatures of a substrate and non-uniform film growth, and concomitantly enhancing the durability of the catalyst wire.
摘要翻译：催化剂增强化学气相沉积（CECVD）装置和沉积方法，其中向催化剂丝施加张力以防止催化剂丝由于热变形而下垂，并且使用另外的气体来防止异物生成。 CECVD装置可以构造有处理室，将工艺气体引入处理室的喷头，设置在处理室中的分解从喷头引入的气体的拉伸催化剂丝线结构以及由其分解的气体催化剂丝线结构被沉积，使得张力被施加到催化剂丝上，以防止催化剂丝由于热变形而下垂，并且使用额外的气体来防止产生异物，从而消除不均匀的发生底物的温度和不均匀的膜生长，并且伴随地提高催化剂丝的耐久性。

7. 发明授权

US08052795B2 Catalyst enhanced chemical vapor deposition apparatus and deposition method using the same 有权
标题翻译：催化剂增强化学气相沉积装置及其沉积方法
公开(公告)号：US08052795B2
公开(公告)日：2011-11-08
申请号：US11405552
申请日：2006-04-18
申请人： Hee-Cheol Kang , Kazuo Furuno , Han-Ki Kim , Myoung-Soo Kim
发明人： Hee-Cheol Kang , Kazuo Furuno , Han-Ki Kim , Myoung-Soo Kim
IPC分类号： C23C16/00
CPC分类号： C23C16/44 , C23C16/46
摘要： A catalyst-enhanced chemical vapor deposition (CECVD) apparatus and a deposition method, in which tension is applied to a catalyst wire in order to prevent the catalyst wire from sagging due to thermal deformation, and additional gas is used to prevent foreign material from being generated. The CECVD apparatus may be constructed with a process chamber, a showerhead to introduce process gas into process chamber, a tensile catalyst wire structure provided in the process chamber to decompose the gas introduced from the showerhead, and a substrate on which the gas decomposed by the catalyst wire structure is deposited, so that the tension is applied to a catalyst wire in order to prevent the catalyst wire from sagging due to thermal deformation, and additional gas is used to prevent foreign material from being generated, thereby eliminating occurrences of non-uniform temperatures of a substrate and non-uniform film growth, and concomitantly enhancing the durability of the catalyst wire.
摘要翻译：催化剂增强化学气相沉积（CECVD）装置和沉积方法，其中向催化剂丝施加张力以防止催化剂丝由于热变形而下垂，并且使用另外的气体来防止异物生成。 CECVD装置可以构造有处理室，将工艺气体引入处理室的喷头，设置在处理室中的分解从喷头引入的气体的拉伸催化剂丝线结构以及由其分解的气体催化剂丝线结构被沉积，使得张力被施加到催化剂丝上，以防止催化剂丝由于热变形而下垂，并且使用额外的气体来防止产生异物，从而消除不均匀的发生底物的温度和不均匀的膜生长，并且伴随地提高催化剂丝的耐久性。

8. 发明申请

US20130175590A1 SEMICONDUCTOR DEVICE, SEMICONDUCTOR SYSTEM, AND METHOD OF FABRICATING THE SEMICONDUCTOR DEVICE 审中-公开
标题翻译：半导体器件，半导体系统和半导体器件的制造方法
公开(公告)号：US20130175590A1
公开(公告)日：2013-07-11
申请号：US13614918
申请日：2012-09-13
申请人： Myoung-Soo Kim
发明人： Myoung-Soo Kim
IPC分类号： H01L29/94
CPC分类号： H01L21/76224 , H01L23/60 , H01L27/0629 , H01L27/0676 , H01L27/0805 , H01L29/861 , H01L29/94 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device includes: an element isolation region formed in a substrate that defines an active region, a conductive layer formed on the active region, a first insulating film formed between the active region and the conductive layer and having a first thickness, and a second insulating film formed between the active region and the conductive layer and spans at least part of a boundary between the active region and the element isolation region and having a second thickness which is greater than the first thickness.
摘要翻译：半导体器件包括：形成在限定有源区的衬底中的元件隔离区，在有源区上形成的导电层，形成在有源区和导电层之间并具有第一厚度的第一绝缘膜，第二绝缘膜形成在有源区和导电层之间的绝缘膜，并跨越有源区和元件隔离区之间的边界的至少一部分，并且具有大于第一厚度的第二厚度。

9. 发明申请

US20060278951A1 Metal oxide semiconductor (MOS) field effect transistor having trench isolation region and method of fabricating the same 审中-公开
公开(公告)号：US20060278951A1
公开(公告)日：2006-12-14
申请号：US11416736
申请日：2006-05-03
申请人： Myoung-Soo Kim
发明人： Myoung-Soo Kim
IPC分类号： H01L21/76
CPC分类号： H01L21/823481 , H01L29/78
摘要： A leakage current occurring on a boundary of a trench isolation region and an active region can be prevented in a Metal Oxide Semiconductor (MOS) Field Effect transistor, and a fabricating method thereof is provided. The transistor includes the trench isolation region disposed in a predetermined portion of a semiconductor substrate to define the active region. A source region and a drain region are spaced apart from each other within the active region with a channel region disposed between the source region and the drain region. A gate electrode crosses over the channel region between the source region and the drain region, and a gate insulating layer is disposed between the gate electrode and the channel region. An edge insulating layer thicker than the gate insulating layer is disposed on a lower surface of the gate electrode around the boundary of the trench isolation region and the active region.

10. 发明授权

US07084452B2 Semiconductor device having one-time programmable ROM and method of fabricating the same 失效
标题翻译：具有一次可编程ROM的半导体器件及其制造方法
公开(公告)号：US07084452B2
公开(公告)日：2006-08-01
申请号：US10722935
申请日：2003-11-26
申请人： Myoung-Soo Kim
发明人： Myoung-Soo Kim
IPC分类号： H01L29/76 , H01L29/788
CPC分类号： H01L27/11526 , H01L27/11531 , H01L29/66825
摘要： A semiconductor device with a one-time programmable (OTP) ROM disposed over a semiconductor substrate including a memory cell area and a peripheral circuit area includes a MOS transistor and an OTP ROM capacitor. The MOS transistor has a floating gate electrode and is disposed at the memory cell area. The OTP ROM capacitor has a lower electrode, an upper intermetal dielectric, and an upper electrode which are stacked in the order named. The OTP ROM capacitor is disposed on the MOS transistor, and the floating gate electrode and the lower electrode are connected by a floating gate plug to constitute an electrically insulated conductive structure. The upper intermetal dielectric is made of at least one selected from the group consisting of silicon oxide, silicon nitride, and silicon oxynitride and may be disposed on an entire surface of the semiconductor substrate. A capacitor formed together with the OTP ROM is disposed at the peripheral circuit region.
摘要翻译：具有设置在包括存储单元区域和外围电路区域的半导体衬底上的一次可编程（OTP）ROM的半导体器件包括MOS晶体管和OTP ROM电容器。 MOS晶体管具有浮置栅电极，并且设置在存储单元区域。 OTP ROM电容器具有按所述顺序堆叠的下电极，上金属间电介质和上电极。 OTP ROM电容器设置在MOS晶体管上，浮栅电极和下电极通过浮栅连接，构成绝缘导电结构。上部金属间电介质由选自氧化硅，氮化硅和氮氧化硅中的至少一种制成，并且可以设置在半导体衬底的整个表面上。与OTP ROM一起形成的电容器设置在外围电路区域。

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