会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 3. 发明申请
    • Low-noise image sensor and transistor for image sensor
    • 低噪声图像传感器和图像传感器晶体管
    • US20070158710A1
    • 2007-07-12
    • US11633887
    • 2006-12-05
    • Bong MheenMi KimYoung Song
    • Bong MheenMi KimYoung Song
    • H01L31/113H01L31/062
    • H01L27/14614H01L27/14601H01L27/14603
    • Provided are a low-noise image sensor capable of improving the efficiency of charge transfer from a photodiode to a diffusion node region and effectively suppressing the generation of dark current, and a transistor for the image sensor. The image sensor includes: a photosensitive pixel having a transfer transistor formed in a structure which causes hole accumulation in a part or all regions of a gate oxide; and a sensing control part applying a negative offset potential to the gate during a part or whole of a turn-off period of the transfer transistor. When the transfer transistor is off, the image sensor may form a sufficient barrier and accumulate electrons in the photodiode, and when the transistor is on, the sensor sufficiently lowers a barrier, fully depletes the photodiode before the transfer transistor reaches a threshold voltage, and inactivates a trap in a predetermined region for a certain time, and thus the dark current can be reduced.
    • 提供了能够提高从光电二极管到扩散节点区域的电荷转移效率并有效抑制暗电流的产生的低噪声图像传感器,以及用于图像传感器的晶体管。 图像传感器包括:具有转移晶体管的感光像素,该转移晶体管形成为在栅极氧化物的一部分或全部区域中引起空穴积累的结构; 以及在转移晶体管的关断周期的一部分或全部期间向栅极施加负偏移电位的感测控制部分。 当转移晶体管截止时,图像传感器可能形成足够的势垒并在光电二极管中积聚电子,并且当晶体管导通时,传感器充分降低势垒,在转移晶体管达到阈值电压之前完全耗尽光电二极管, 使预定区域中的陷阱钝化一定时间,从而可以减小暗电流。
    • 4. 发明申请
    • Injection-molding method and apparatus
    • 注射成型方法和装置
    • US20070145645A1
    • 2007-06-28
    • US11351146
    • 2006-02-08
    • Young Song
    • Young Song
    • B29C45/00
    • B29C45/2673B29C45/076B29L2031/3437B29L2031/466
    • Injection-molding method and apparatus. The mold device is composed of a plurality of unit mold devices each of which comprises cassette type molds configured to allow their cores defining a molding space between them to be changed. The unit mold devices are arranged at regular intervals to be opened and closed in a horizontal direction to thereby allow the molded product to freely fall. The unit mold devices sequentially and respectively conduct a mold clamping process, an injection process, a cooling process and an ejection process under the control of control means. Injection means is moved above the unit mold devices in accordance with a preset cycle and time and raised and lowered to be brought into contact with the cores of the unit mold device having conducted the mold clamping process to then inject melted resin and finally obtain a molded product.
    • 注射成型方法和装置。 模具装置由多个单元模具装置组成,每个单元模具装置包括盒型模具,其构造成允许其芯限定它们之间的模制空间。 单元模具装置以规则的间隔布置以在水平方向上打开和关闭,从而允许模制品自由下落。 单元模具装置在控制装置的控制下依次分别进行模具夹紧过程,注射过程,冷却过程和喷射过程。 注射装置按照预设的循环和时间移动到单元模具装置上方,并升高和降低以与进行模具夹紧过程的单元模具装置的芯部接触,然后注入熔融树脂,最后获得模制 产品。
    • 10. 发明申请
    • LOW-VOLTAGE IMAGE SENSOR AND METHOD OF DRIVING TRANSFER TRANSISTOR THEREOF
    • 低电压图像传感器及其驱动转换晶体管的方法
    • US20080099807A1
    • 2008-05-01
    • US11875513
    • 2007-10-19
    • Mi KimBong MheenYoung SongSeong Park
    • Mi KimBong MheenYoung SongSeong Park
    • H01L27/146H04N5/335
    • H01L27/14603H01L27/14609H04N5/361H04N5/365H04N5/3745
    • Provided are a low-voltage image sensor and a method of driving a transfer transistor thereof, which are obtained by changing the structure and driving method of a typical transfer transistor of a 4-transistor CMOS transistor, and can eliminate the influence of a voltage or physical structure of a diffusion node on a reset or transfer operation of a photodiode. The image sensor includes a light receiving device for detecting light and a signal conversion unit for reading photocharge generated by the light receiving device to an external circuit. The signal conversion unit includes a transfer transistor including at least two gate electrodes. When the photocharge is transferred to a channel of a transfer gate electrode disposed closest to a photodiode, a transfer gate electrode disposed adjacent to a diffusion node remains turned off.
    • 提供了通过改变4晶体管CMOS晶体管的典型转移晶体管的结构和驱动方法获得的低压图像传感器和驱动其传输晶体管的方法,并且可以消除电压或 在光电二极管复位或传输操作时扩散节点的物理结构。 图像传感器包括用于检测光的光接收装置和用于将由光接收装置产生的光电荷读取到外部电路的信号转换单元。 信号转换单元包括至少两个栅电极的转移晶体管。 当光电荷转移到最靠近光电二极管设置的传输栅电极的沟道时,与扩散节点相邻设置的传输栅电极保持关闭。