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    • 1. 发明申请
    • Inductively coupled plasma processing apparatus
    • 电感耦合等离子体处理装置
    • US20070017637A1
    • 2007-01-25
    • US11489656
    • 2006-07-18
    • Kyu LeeHan KimDo KimMyoung Kim
    • Kyu LeeHan KimDo KimMyoung Kim
    • C23F1/00C23C16/00
    • H01J37/321
    • An inductively coupled plasma processing apparatus is disclosed. The inductively coupled plasma processing apparatus includes a reaction chamber, a substrate holder for forming a plasma space in the reaction chamber and for supporting a processing substrate therein, a shield provided at the lateral side of the substrate holder, a plurality of openings formed below the substrate, and a linear antenna in the lower portion of the reaction chamber to which a high frequency power signal is applied. Thus, the inductively coupled plasma processing apparatus can uniformly distribute the density of the plasma so that a large-sized flat panel display can be implemented.
    • 公开了一种电感耦合等离子体处理装置。 电感耦合等离子体处理装置包括反应室,用于在反应室中形成等离子体空间并用于在其中支撑处理基板的基板保持件,设置在基板保持器的侧面的屏蔽件, 基板和在其上施加高频功率信号的反应室下部的线性天线。 因此,电感耦合等离子体处理装置可以均匀地分配等离子体的密度,从而可以实现大尺寸的平板显示器。
    • 2. 发明申请
    • Method for in-situ polycrystalline thin film growth
    • 原位多晶薄膜生长方法
    • US20060257569A1
    • 2006-11-16
    • US11433176
    • 2006-05-12
    • Han KimMyoung KimMyung HuhSeok JeongHee Kang
    • Han KimMyoung KimMyung HuhSeok JeongHee Kang
    • C23C16/00
    • C23C16/24C23C16/44
    • A method for in-situ polycrystalline thin film growth is provided. A catalyst enhanced chemical vapor deposition (CECVD) apparatus is used to grow the polycrystalline silicon thin film. No subsequent annealing or dehydrogenating process is needed. The method comprises exhausting a chamber to form a vacuum chamber, and then purging vacuum chamber and introducing a catalyst. A substrate is then placed in the vacuum chamber and reaction gas is injected into the chamber. The reaction gas reacts with the catalyst in the chamber to grow a polycrystalline thin film on the substrate. The inventive method reduces processing time and production cost and can be used to fabricate larger devices due to the elimination of bulky annealing equipment.
    • 提供了一种原位多晶薄膜生长的方法。 使用催化剂增强化学气相沉积(CECVD)装置来生长多晶硅薄膜。 不需要随后的退火或脱氢过程。 该方法包括排空室以形成真空室,然后净化真空室并引入催化剂。 然后将基板放置在真空室中,并将反应气体注入室中。 反应气体与室中的催化剂反应,以在衬底上生长多晶薄膜。 本发明的方法减少了处理时间和生产成本,并且由于消除了大型退火设备而可用于制造更大的装置。
    • 3. 发明申请
    • CVD apparatus for depositing polysilicon
    • 用于沉积多晶硅的CVD装置
    • US20070128861A1
    • 2007-06-07
    • US11405091
    • 2006-04-17
    • Myoung KimHan KimSeok Jeong
    • Myoung KimHan KimSeok Jeong
    • H01L21/84H01L21/44C23C16/00
    • C23C16/44C23C16/24H01L27/13H01L29/6675
    • Disclosed is a CVD apparatus for depositing polysilicon without a separate following annealing process, the CVD apparatus comprising: a chamber to form a thin film on a substrate; a showerhead placed in an upper part of the chamber to inject reaction gas onto the substrate; a distributor formed with distributing holes to uniformly distribute the reaction gas; a catalyst hot wire unit to heat and dissolve the reaction gas injected through the distributing holes of the distributor; a chuck on which the substrate is mounted; a discharging hole to discharge the reaction gas; and a shielding wall provided as a lateral wall of the chamber and formed with a heater to suppress particle generation. With this configuration, the particle generation is minimized and thus the yield is enhanced. Also, the thin film has good crystallinity, and decreased hydrogen content.
    • 公开了一种用于在没有单独的跟随退火工艺的情况下沉积多晶硅的CVD装置,该CVD装置包括:在衬底上形成薄膜的腔室; 放置在所述室的上部的喷头,以将反应气体注入到所述基板上; 形成有分布孔以均匀分布反应气体的分配器; 用于加热和溶解通过分配器的分配孔注入的反应气体的催化剂热丝单元; 安装有基板的卡盘; 用于排出反应气体的排出孔; 以及作为室的侧壁设置的屏蔽壁,并且形成有用于抑制颗粒产生的加热器。 利用这种构造,使颗粒生成最小化,从而提高了产率。 此外,薄膜具有良好的结晶度,并降低了氢含量。
    • 10. 发明授权
    • Electromagnetic bandgap structure and circuit board
    • 电磁带隙结构和电路板
    • US08289099B2
    • 2012-10-16
    • US12568362
    • 2009-09-28
    • Han KimJa-Bu KooDae-Hyun Park
    • Han KimJa-Bu KooDae-Hyun Park
    • H03H7/00
    • H01P1/2005H01P1/203H05K1/0236H05K2201/09309H05K2201/09627H05K2201/09681
    • An electromagnetic bandgap structure includes: first conductive plates, placed on a first planar surface, in which the first conductive plates are lined up in a first direction; second conductive plates, placed on a second planar surface and arranged at an area corresponding to an area in which the first conductive plates are disposed, in which the second conductive plates are lined up in the first direction; a first stitching via, electrically connecting any two adjacent conductive portions with each other and in which the two adjacent conductive portions are lined up in a direction that is different from the first direction on the first planar surface; and a second stitching via, electrically connecting any two adjacent conductive portions with each other and in which the two adjacent conductive portions are lined up in a direction that is different from the first direction on the second planar surface.
    • 电磁带隙结构包括:第一导电板,放置在第一平面上,第一导电板沿第一方向排列; 第二导电板,放置在第二平坦表面上并且布置在与设置有第一导电板的区域相对应的区域中,其中第二导电板沿第一方向排列; 第一缝合通孔,将任何两个相邻的导电部分彼此电连接,并且其中两个相邻的导电部分沿与第一平坦表面上的第一方向不同的方向排列; 以及第二缝合通孔,将任何两个相邻的导电部彼此电连接,并且其中两个相邻的导电部分在与第二平面上的第一方向不同的方向上排列。