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1. 发明申请

US20060131297A1 COOKING CHAMBER PARTITION MEMBER AND ELECTRIC OVEN HAVING THE SAME 失效
标题翻译：烹饪室分隔件和电烤箱
公开(公告)号：US20060131297A1
公开(公告)日：2006-06-22
申请号：US11135643
申请日：2005-05-24
申请人： Kyoung Kim , Cheol Kim , Sung Park , Kil Lee , Suk Yum , Sung Kang
发明人： Kyoung Kim , Cheol Kim , Sung Park , Kil Lee , Suk Yum , Sung Kang
IPC分类号： A21B1/22 , A21B1/00 , F27D11/00
CPC分类号： F24C15/325 , F24C15/16
摘要： An electric oven includes a partition member to partition a cooking chamber into two cooking regions. The partition member for use in the electric oven includes an insulating board interposed between upper and lower plates of the partition member, and a shock-absorbing unit to prevent damage to the insulating board. Using the electric oven configured as stated above, it is possible to intercept heat transfer between the partitioned respective cooking regions, thereby preventing heat loss between the respective cooking regions and damage to the interior of the partition member.
摘要翻译：电炉包括将烹饪室分隔成两个烹饪区域的分隔构件。用于电烤箱的分隔构件包括插入分隔构件的上板和下板之间的绝缘板，以及用于防止损坏绝缘板的减震单元。使用如上所述构造的电烤箱，可以截取分隔的各个烹饪区域之间的热传递，从而防止各个烹饪区域之间的热损失并损坏分隔构件的内部。

2. 发明申请

US20060137675A1 Heating apparatus and method for cooking 审中-公开
标题翻译：加热装置和烹饪方法
公开(公告)号：US20060137675A1
公开(公告)日：2006-06-29
申请号：US11167755
申请日：2005-06-28
申请人： Kyoung Kim , Cheol Kim , Yu Ha , Kil Lee , Suk Yum , Sung Park , Sung Kang
发明人： Kyoung Kim , Cheol Kim , Yu Ha , Kil Lee , Suk Yum , Sung Park , Sung Kang
IPC分类号： F24C15/32
CPC分类号： F24C15/325 , F24C15/001 , F24C15/006
摘要： A heating apparatus for cooking, which ventilates the insides of cooking chambers after the cooking of food in the cooking chambers is completed, to rapidly cook the insides of the cooking chambers, and selectively ventilates one out of the cooking chambers. The heating apparatus for cooking includes a main body including a plurality of cooking chambers, which are separable from each other; a plurality of heaters for respectively heating the cooking chambers; and a ventilating device for ventilating the cooking chambers by introducing external air, wherein the ventilating device includes an air blowing unit for blowing the external air to the insides of the cooking chambers, and a flow change unit for selectively supplying air blown by the air blowing unit to the cooking chambers. In addition, methods to achieve the above are disclosed.
摘要翻译：完成烹饪室内烹调食物后的烹饪室内部烹调的加热装置，以快速烹饪烹饪室的内部，并且将烹饪室中的一个选择性地通风。烹调用加热装置包括：主体，其包括可彼此分离的多个烹饪室; 多个用于分别加热烹饪室的加热器; 以及用于通过引入外部空气使烹饪室通风的通风装置，其中通风装置包括用于将外部空气吹送到烹饪室的内部的送风单元，以及用于选择性地供应通过吹送吹入的空气的换流单元单位到烹饪室。此外，公开了实现上述的方法。

3. 发明申请

US20060278214A1 Oven 有权
标题翻译：烤箱
公开(公告)号：US20060278214A1
公开(公告)日：2006-12-14
申请号：US11297424
申请日：2005-12-09
申请人： Sung Park , Pung Cho , Cheol Kim , Kyoung Kim , Kil Lee , Sung Kim , Yu Ha , Yun Hwang , Sang Kang , Seok Hong , Tae Kim
发明人： Sung Park , Pung Cho , Cheol Kim , Kyoung Kim , Kil Lee , Sung Kim , Yu Ha , Yun Hwang , Sang Kang , Seok Hong , Tae Kim
IPC分类号： F24C15/32
CPC分类号： F24C15/04 , F24C15/006
摘要： Disclosed herein is an oven that is capable of discharging hot air generated when cooling a door and heat generated in a cooking chamber through the lower end of the door. The oven includes a door having at least two separated air channels. The air channels comprise at least one first air channel to discharge hot air generated when cooling the door through the lower end of the door, and at least one second air channel to introduce air through the lower end of the door such that the door is cooled. In the housing is mounted a circulating fan. Between the circulating fan and the air channels is connected a channel connecting unit. As the circulating fan is rotated, air flows along the second air channel to cool the door. Hot air generated when cooling the door is introduced into the first air channel through the channel connecting unit, and is then discharged out of the oven through the lower end of the door.
摘要翻译：本文公开了一种烤箱，其能够排出冷却门时产生的热空气和通过门的下端在烹饪室中产生的热量。烤箱包括具有至少两个分开的空气通道的门。空气通道包括至少一个第一空气通道，以排出当通过门的下端冷却门时产生的热空气，以及至少一个第二空气通道，以引导空气通过门的下端，使得门被冷却。在外壳中安装有循环风扇。在循环风扇和空气通道之间连接一个通道连接单元。当循环风扇旋转时，空气沿着第二空气通道流动以冷却门。冷却门时产生的热空气通过通道连接单元引入第一空气通道，然后通过门的下端排出烘箱。

4. 发明申请

US20060282982A1 Door damper and electronic appliances having the same 失效
标题翻译：门阻尼器和具有相同的电子设备
公开(公告)号：US20060282982A1
公开(公告)日：2006-12-21
申请号：US11272744
申请日：2005-11-15
申请人： Sung Kim , Yu Ha , Yun Hwang , Seok Hong , Pung Cho , Kyoung Kim , Kil Lee , Cheol Kim , Tae Kim , Sang Kang
发明人： Sung Kim , Yu Ha , Yun Hwang , Seok Hong , Pung Cho , Kyoung Kim , Kil Lee , Cheol Kim , Tae Kim , Sang Kang
IPC分类号： E05D7/00
CPC分类号： E05F3/14 , E05D7/081 , E05F3/20 , E05F5/02 , E05Y2201/21 , E05Y2201/254 , E05Y2201/266 , E05Y2201/416 , E05Y2900/308 , F24C15/023 , Y10T16/52
摘要： A door damper. The door damper includes a rotational shaft rotatably coupled to a door, a rotating resistance unit to generate rotating resistance to the rotational shaft, and a latching device latched to the rotational shaft and the door so as to allow the door and the rotational shaft to rotate together in a predetermined region. The latching device includes a free rotating section enabling free rotation of the door at an initial stage of opening the door, and a latching section enabling the latching device to be latched to the rotational shaft and the door at a final stage of opening the door so as to allow the door and the rotational shaft to rotate together. With the door damper, the door of electronic appliances can be smoothly opened without impact, and can be easily closed.
摘要翻译：门阻尼器门阻尼器包括可旋转地联接到门的旋转轴，用于产生对旋转轴的旋转阻力的旋转阻力单元和锁定到旋转轴和门的闩锁装置，以允许门和旋转轴旋转一起在预定区域。闩锁装置包括自由旋转部分，其能够在打开门的初始阶段使门能够自由旋转;以及闩锁部分，其能够在打开门的最后阶段将闩锁装置锁定到旋转轴和门以允许门和旋转轴一起旋转。使用门阻尼器，可以平稳地打开电子设备的门而不受冲击，并且可以容易地关闭。

5. 发明申请

US20060196495A1 Oven 有权
标题翻译：烤箱
公开(公告)号：US20060196495A1
公开(公告)日：2006-09-07
申请号：US11232862
申请日：2005-09-23
申请人： Kyuoung Kim , Yun Hwang , Seok Hong , Pung Cho , Yu Ha , Sung Park , Sung Kim , Kil Lee , Cheol Kim , Tae Kim , Sang Kang
发明人： Kyuoung Kim , Yun Hwang , Seok Hong , Pung Cho , Yu Ha , Sung Park , Sung Kim , Kil Lee , Cheol Kim , Tae Kim , Sang Kang
IPC分类号： F24C15/04
CPC分类号： F24C15/006 , F24C15/04 , F24C15/2007
摘要： An oven, effectively and rapidly cooling a door by passing a sufficient quantity of cooling air through the door, is disclosed. The oven includes an outer case, an inner case, a door opening and closing the inner case, and a blower chamber having a cooling fan and provided at the upper side of the inner case. The door includes an inner plate and a frame to form an opened lower end. The frame has holes formed in the upper side to flowing air discharged by the cooling fan between the inner plate and an outer plate. A vent hole communicating with the blower chamber is provided in the upper end of the cooking chamber to pass hot air of the cooking chamber through the vent hole. Around the vent hole, a partition member is provided for preventing the hot air from being mixed with air discharged by cooling fan.
摘要翻译：公开了一种通过将足够量的冷却空气通过门来有效且快速地冷却门的烤箱。烤箱包括外壳，内壳，门打开和关闭内壳，以及具有冷却风扇并设置在内壳的上侧的鼓风机室。门包括内板和框架以形成打开的下端。框架具有形成在上侧的孔，其中冷却风扇在内板和外板之间排出的流动空气。在烹饪室的上端设置有与鼓风机室连通的通气孔，以通过烹饪室的热空气通过通气孔。在通气孔周围设置有用于防止热空气与由冷却风扇排出的空气混合的分隔构件。

6. 发明授权

US09190407B2 Semiconductor device and method for fabricating the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US09190407B2
公开(公告)日：2015-11-17
申请号：US14569597
申请日：2014-12-12
申请人： Byoung-Ho Kwon , Cheol Kim , Ho-Young Kim , Se-Jung Park , Myeong-Cheol Kim , Bo-Kyeong Kang , Bo-Un Yoon , Jae-Kwang Choi , Si-Young Choi , Suk-Hoon Jeong , Geum-Jung Seong , Hee-Don Jeong , Yong-Joon Choi , Ji-Eun Han
发明人： Byoung-Ho Kwon , Cheol Kim , Ho-Young Kim , Se-Jung Park , Myeong-Cheol Kim , Bo-Kyeong Kang , Bo-Un Yoon , Jae-Kwang Choi , Si-Young Choi , Suk-Hoon Jeong , Geum-Jung Seong , Hee-Don Jeong , Yong-Joon Choi , Ji-Eun Han
IPC分类号： H01L27/088 , H01L29/78 , H01L29/66 , H01L21/8238 , H01L21/8234 , H01L29/49
CPC分类号： H01L29/7853 , H01L21/30604 , H01L21/3065 , H01L21/3085 , H01L21/823431 , H01L21/823437 , H01L21/823481 , H01L21/823807 , H01L21/823814 , H01L21/823821 , H01L21/845 , H01L27/0886 , H01L27/1211 , H01L29/0673 , H01L29/42364 , H01L29/4238 , H01L29/49 , H01L29/66545 , H01L29/6656 , H01L29/66795 , H01L29/78 , H01L29/785
摘要： Semiconductor devices may include a semiconductor substrate with a first semiconductor fin aligned end-to-end with a second semiconductor with a recess between facing ends of the first and second semiconductor fins. A first insulator pattern is formed adjacent sidewalls of the first and second semiconductor fins and a second insulator pattern is formed within the first recess. The second insulator pattern may have a top surface higher than a top surface of the first insulator pattern, such as to the height of the top surface of the fins (or higher or lower). First and second gates extend along sidewalls and a top surface of the first semiconductor fin. A dummy gate electrode may be formed on the top surface of the second insulator. Methods for manufacture of the same and modifications are also disclosed.
摘要翻译：半导体器件可以包括具有第一半导体鳍片的半导体衬底，第一半导体鳍片端对端与第二半导体对准，第二半导体在第一和第二半导体鳍片的相对端之间具有凹陷。第一绝缘体图案形成在第一和第二半导体鳍片的相邻侧壁附近，并且在第一凹部内形成第二绝缘体图案。第二绝缘体图案可以具有高于第一绝缘体图案的顶表面的顶表面，例如高于鳍片（或更高或更低）的顶表面的高度。第一和第二栅极沿第一半导体鳍片的侧壁和顶表面延伸。可以在第二绝缘体的顶表面上形成伪栅电极。还公开了其制造方法和修改方案。

7. 发明授权

US08916460B1 Semiconductor device and method for fabricating the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08916460B1
公开(公告)日：2014-12-23
申请号：US14270315
申请日：2014-05-05
申请人： Byoung-Ho Kwon , Cheol Kim , Ho-Young Kim , Se-Jung Park , Myeong-Cheol Kim , Bo-Kyeong Kang , Bo-Un Yoon , Jae-Kwang Choi , Si-Young Choi , Suk-Hoon Jeong , Geum-Jung Seong , Hee-Don Jeong , Yong-Joon Choi , Ji-Eun Han
发明人： Byoung-Ho Kwon , Cheol Kim , Ho-Young Kim , Se-Jung Park , Myeong-Cheol Kim , Bo-Kyeong Kang , Bo-Un Yoon , Jae-Kwang Choi , Si-Young Choi , Suk-Hoon Jeong , Geum-Jung Seong , Hee-Don Jeong , Yong-Joon Choi , Ji-Eun Han
IPC分类号： H01L29/49 , H01L29/78 , H01L21/336 , H01L29/66 , H01L21/8238
CPC分类号： H01L29/7853 , H01L21/30604 , H01L21/3065 , H01L21/3085 , H01L21/823431 , H01L21/823437 , H01L21/823481 , H01L21/823807 , H01L21/823814 , H01L21/823821 , H01L21/845 , H01L27/0886 , H01L27/1211 , H01L29/0673 , H01L29/42364 , H01L29/4238 , H01L29/49 , H01L29/66545 , H01L29/6656 , H01L29/66795 , H01L29/78 , H01L29/785
摘要： Semiconductor devices may include a semiconductor substrate with a first semiconductor fin aligned end-to-end with a second semiconductor with a recess between facing ends of the first and second semiconductor fins. A first insulator pattern is formed adjacent sidewalls of the first and second semiconductor fins and a second insulator pattern is formed within the first recess. The second insulator pattern may have a top surface higher than a top surface of the first insulator pattern, such as to the height of the top surface of the fins (or higher or lower). First and second gates extend along sidewalls and a top surface of the first semiconductor fin. A dummy gate electrode may be formed on the top surface of the second insulator. Methods for manufacture of the same and modifications are also disclosed.
摘要翻译：半导体器件可以包括具有第一半导体鳍片的半导体衬底，第一半导体鳍片端对端与第二半导体对准，第二半导体在第一和第二半导体鳍片的相对端之间具有凹陷。第一绝缘体图案形成在第一和第二半导体鳍片的相邻侧壁附近，并且在第一凹部内形成第二绝缘体图案。第二绝缘体图案可以具有高于第一绝缘体图案的顶表面的顶表面，例如高于鳍片（或更高或更低）的顶表面的高度。第一和第二栅极沿第一半导体鳍片的侧壁和顶表面延伸。可以在第二绝缘体的顶表面上形成伪栅电极。还公开了其制造方法和修改方案。

8. 发明授权

US08617991B2 Method of manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US08617991B2
公开(公告)日：2013-12-31
申请号：US13526960
申请日：2012-06-19
申请人： Jung-Chan Lee , Yoo-Jung Lee , Ki-Hyung Ko , Dae-Young Kwak , Seung-Jae Lee , Jae-Sung Hur , Sang-Bom Kang , Cheol Kim , Bo-Un Yoon
发明人： Jung-Chan Lee , Yoo-Jung Lee , Ki-Hyung Ko , Dae-Young Kwak , Seung-Jae Lee , Jae-Sung Hur , Sang-Bom Kang , Cheol Kim , Bo-Un Yoon
IPC分类号： H01L21/44
CPC分类号： H01L29/4983 , H01L21/76895 , H01L21/82345 , H01L29/49 , H01L29/66545 , H01L29/78
摘要： A method of manufacturing a semiconductor device includes forming an interlayer dielectric film that has first and second trenches on first and second regions of a substrate, respectively, forming a first metal layer along a sidewall and a bottom surface of the first trench and along a top surface of the interlayer dielectric film in the first region, forming a second metal layer along a sidewall and a bottom surface of the second trench and along a top surface of the interlayer dielectric film in the second region, forming a first sacrificial layer pattern on the first metal layer such that the first sacrificial layer fills a portion of the first trench, forming a first electrode layer by etching the first metal layer and the second metal layer using the first sacrificial layer pattern, and removing the first sacrificial layer pattern.
摘要翻译：一种制造半导体器件的方法包括：在衬底的第一和第二区域上分别形成具有第一和第二沟槽的层间电介质膜，沿着第一沟槽的侧壁和底表面沿顶部形成第一金属层在所述第一区域中的所述层间电介质膜的表面，沿着所述第二沟槽的侧壁和底表面沿着所述第二区域中的所述层间电介质膜的顶表面形成第二金属层，在所述第二区域中形成第一牺牲层图案第一金属层，使得第一牺牲层填充第一沟槽的一部分，通过使用第一牺牲层图案蚀刻第一金属层和第二金属层形成第一电极层，以及去除第一牺牲层图案。

9. 发明申请

US20130182522A1 MEMORY DEVICE, METHOD OF OPERATING THE SAME, AND APPARATUS INCLUDING THE SAME 有权
标题翻译：存储器件，其操作方法和包括其的装置
公开(公告)号：US20130182522A1
公开(公告)日：2013-07-18
申请号：US13613492
申请日：2012-09-13
申请人： Young-Il LIM , Cheol Kim , Jung Sik Kim , Yun Sang Lee
发明人： Young-Il LIM , Cheol Kim , Jung Sik Kim , Yun Sang Lee
IPC分类号： G11C11/402
CPC分类号： G11C11/406 , G11C5/04 , G11C8/12 , G11C11/40618
摘要： A method of operating a memory device includes masking at least one bank among a plurality of banks in response to a mode register writing command; and performing a refresh operation on a plurality of rows in one of unmasked banks in response to a first per-bank refresh command.
摘要翻译：操作存储器件的方法包括响应于模式寄存器写入命令来屏蔽多个存储体中的至少一个存储体; 以及响应于第一个每个银行刷新命令，对未屏蔽的银行之一中的多个行执行刷新操作。

10. 发明授权

US08379477B2 Sub-word-line driving circuit, semiconductor memory device having the same, and method of controlling the same 有权
标题翻译：子字线驱动电路，具有其的半导体存储器件及其控制方法
公开(公告)号：US08379477B2
公开(公告)日：2013-02-19
申请号：US13019858
申请日：2011-02-02
申请人： Cheol Kim , Sang-Kyun Park , Jung-Bae Lee , Jun-Phyo Lee
发明人： Cheol Kim , Sang-Kyun Park , Jung-Bae Lee , Jun-Phyo Lee
IPC分类号： G11C8/10
CPC分类号： G11C8/14 , G11C8/08
摘要： Provided is a semiconductor memory device including a sub-word-line driving circuit capable of reducing an amount of leakage current due to coupling. The semiconductor memory device includes a word-line enable signal generating circuit and a sub-word-line driving circuit. The sub-word-line driving circuit provides a pull-down current path between a selected word line and ground for a pulse type period of time in a precharge mode following an active mode for the selected word line, generates a word line driving signal on the basis of a main word line driving signal, a first sub-word-line control signal, and a second sub-word-line control signal, and provides the word line driving signal to a memory cell array. The semiconductor memory device may reduce an amount of leakage current flowing to a ground through the sub-word-line driving circuit.
摘要翻译：提供了一种半导体存储器件，其包括能够减少由耦合引起的漏电流量的子字线驱动电路。半导体存储器件包括字线使能信号发生电路和子字线驱动电路。子字线驱动电路在所选字线的有效模式之后的预充电模式中的脉冲类型时段期间，在所选字线和地之间提供下拉电流路径，生成字线驱动信号主字线驱动信号的基础，第一子字线控制信号和第二子字线控制信号，并将字线驱动信号提供给存储单元阵列。半导体存储器件可以减少通过子字线驱动电路流向地的漏电流量。

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