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    • 1. 发明授权
    • Residue removing liquid composition and method for cleaning semiconductor element using same
    • 残渣除去液组合物及使用其的半导体元件的清洗方法
    • US08623587B2
    • 2014-01-07
    • US13057338
    • 2009-07-07
    • Kyoko KamataKeiichi TanakaHiroshi Matsunaga
    • Kyoko KamataKeiichi TanakaHiroshi Matsunaga
    • G03F7/26
    • H01L21/02071C11D7/10C11D7/244C11D7/261C11D7/34C11D7/5004C11D7/5013C11D7/5022C11D11/0047H01L21/02063
    • Provided are a residue removing liquid composition capable of completely removing a resist residue and a titanium (Ti)-derived residue that remains after dry etching and ashing in via hole formation in a production process for a semiconductor substrate having metal wiring of aluminum (Al) or an Al alloy, at a low temperature in a short time, not corroding parts of an interlayer insulating material, a wiring material and others, and a cleaning method for semiconductor devices using it.The residue removing liquid composition contains (A) ammonium fluoride, (B) methanesulfonic acid, (C) a carbon-carbon triple bond-having compound, (D) a water-soluble organic solvent, and (E) water, wherein the content of (A), (C), (D) and (E) in the residue removing liquid composition is from 0.005 to 2% by mass, from 0.1 to 10% by mass, from 60 to 75% by mass and from 5 to 38% by mass, respectively, and (B) is contained in an amount of from 0.9 to 1.5 times (by mol) the amount of (A).
    • 本发明提供一种残留物除去液体组合物,其能够在具有铝(Al)金属配线的半导体基板的制造工序中完全除去抗蚀剂残渣和残留在通孔形成中的干法蚀刻和灰化之后残留的钛(Ti) 或Al合金,在短时间内的低温下,不会腐蚀层间绝缘材料的部分,布线材料等,以及使用它的半导体器件的清洁方法。 除去残渣的液体组合物含有(A)氟化铵,(B)甲磺酸,(C)具有碳 - 碳三键的化合物,(D)水溶性有机溶剂和(E)水, 残渣除去液组合物中的(A),(C),(D)和(E)为0.005〜2质量%,0.1〜10质量%,60〜75质量% 38质量%,(B)的含量为(A)的量的0.9〜1.5倍(摩尔)。
    • 2. 发明申请
    • RESIDUE REMOVING LIQUID COMPOSITION AND METHOD FOR CLEANING SEMICONDUCTOR ELEMENT USING SAME
    • 残留液体组合物的清除方法及使用其清洗半导体元件的方法
    • US20110256483A1
    • 2011-10-20
    • US13057338
    • 2009-07-07
    • Kyoko KamataKeiichi TanakaHiroshi Matsunaga
    • Kyoko KamataKeiichi TanakaHiroshi Matsunaga
    • G03F7/20C11D7/60
    • H01L21/02071C11D7/10C11D7/244C11D7/261C11D7/34C11D7/5004C11D7/5013C11D7/5022C11D11/0047H01L21/02063
    • Provided are a residue removing liquid composition capable of completely removing a resist residue and a titanium (Ti)-derived residue that remains after dry etching and ashing in via hole formation in a production process for a semiconductor substrate having metal wiring of aluminium (Al) or an Al alloy, at a low temperature in a short time, not corroding parts of an interlayer insulating material, a wiring material and others, and a cleaning method for semiconductor devices using it.The residue removing liquid composition contains (A) ammonium fluoride, (B) methanesulfonic acid, (C) a carbon-carbon triple bond-having compound, (D) a water-soluble organic solvent, and (E) water, wherein the content of (A), (C), (D) and (E) in the residue removing liquid composition is from 0.005 to 2% by mass, from 0.1 to 10% by mass, from 60 to 75% by mass and from 5 to 38% by mass, respectively, and (B) is contained in an amount of from 0.9 to 1.5 times (by mol) the amount of (A).
    • 本发明提供一种残留物除去液体组合物,其能够在具有铝(Al)金属配线的半导体基板的制造工序中完全除去抗蚀剂残渣和残留在通孔形成中的干法蚀刻和灰化之后残留的钛(Ti) 或Al合金,在短时间内的低温下,不会腐蚀层间绝缘材料的部分,布线材料等,以及使用它的半导体器件的清洁方法。 除去残渣的液体组合物含有(A)氟化铵,(B)甲磺酸,(C)具有碳 - 碳三键的化合物,(D)水溶性有机溶剂和(E)水, 残渣除去液组合物中的(A),(C),(D)和(E)为0.005〜2质量%,0.1〜10质量%,60〜75质量% 38质量%,(B)的含量为(A)的量的0.9〜1.5倍(摩尔)。
    • 4. 发明授权
    • Copper wiring surface protective liquid and method for manufacturing semiconductor circuit
    • 铜布线表面保护液及制造半导体电路的方法
    • US08420529B2
    • 2013-04-16
    • US13119539
    • 2009-09-02
    • Kenji YamadaKenji ShimadaHiroshi Matsunaga
    • Kenji YamadaKenji ShimadaHiroshi Matsunaga
    • H01L21/28
    • H01L21/321H01L21/02063H01L21/02074
    • A copper wiring material surface protective liquid for production of a semiconductor device is provided, containing an oxyalkylene adduct of an acetylenediol containing an acetylenediol having an oxyalkylene having 2 or 3 carbon atoms added thereto. A method for producing a semiconductor circuit device is provided, containing: forming an insulating film and/or a diffusion preventing film on a silicon substrate; then forming a copper film by a sputtering method; then forming a copper wiring containing 80% by mass or more of copper thereon by a plating method; and flattening the wiring by a chemical mechanical polishing (CMP) method, thereby providing a semiconductor substrate containing a copper wiring, the semiconductor substrate having an exposed surface of a copper wiring material being treated by making in contact with the copper wiring material surface protective liquid.
    • 提供一种用于制造半导体器件的铜布线材料表面保护液,其含有含有具有2或3个碳原子的氧化烯的乙炔二醇的乙炔二醇的氧化烯加成物。 提供一种制造半导体电路器件的方法,包括:在硅衬底上形成绝缘膜和/或防扩散膜; 然后通过溅射法形成铜膜; 然后通过电镀法形成含有80质量%以上的铜的铜布线; 并通过化学机械抛光(CMP)方法使布线变平,从而提供含有铜布线的半导体基板,该半导体基板具有通过与铜布线材料表面保护液体接触来处理铜布线材料的暴露表面 。
    • 5. 发明授权
    • Cleaning composition and process for producing semiconductor device
    • 清洁组合物和半导体器件制造工艺
    • US07977292B2
    • 2011-07-12
    • US12530766
    • 2008-03-06
    • Hiroshi MatsunagaMasaru OhtoHideo KashiwagiHiroshi Yoshida
    • Hiroshi MatsunagaMasaru OhtoHideo KashiwagiHiroshi Yoshida
    • C11D7/18
    • H01L21/31133C11D3/3947C11D7/06C11D7/36C11D11/0047G03F7/423G03F7/425H01L21/02063
    • A cleaning composition of a semiconductor device for laminating an organosiloxane-based thin film and a photoresist layer in this order on a substrate having a low dielectric interlayer insulation film and a copper wiring or a copper alloy wiring, then applying selective exposure and development treatments to the subject photoresist layer to form a photoresist pattern, subsequently applying a dry etching treatment to the organosiloxane-based thin film and the low dielectric interlayer insulation film while using this resist pattern as a mask and then removing the organosiloxane-based thin film, a residue generated by the dry etching treatment, a modified photoresist having been modified by the dry etching treatment and an unmodified photoresist layer located in a lower layer than the modified photoresist, the cleaning composition containing from 15 to 20% by mass of hydrogen peroxide, from 0.0001 to 0.003% by mass of an amino polymethylene phosphonic acid, from 0.02 to 0.5% by mass of potassium hydroxide and water and having a pH of from 7.5 to 8.5, is provided. Also, a method for manufacturing a semiconductor device using the subject cleaning composition is provided.
    • 一种用于在具有低介电层间绝缘膜和铜布线或铜合金布线的基板上依次层叠有机硅氧烷类薄膜和光致抗蚀剂层的半导体装置的清洗组合物,然后对其进行选择性曝光和显影处理 该主体光致抗蚀剂层形成光致抗蚀剂图案,随后在使用该抗蚀剂图案作为掩模的同时对有机硅氧烷类薄膜和低介电层间绝缘膜进行干蚀刻处理,然后除去有机硅氧烷类薄膜,残留物 通过干蚀刻处理产生的改性光致抗蚀剂,通过干蚀刻处理改性的改性光致抗蚀剂和位于比改性光致抗蚀剂低的层中的未改性光致抗蚀剂层,清洗组合物含有15〜20质量%的过氧化氢,0.0001 至0.003质量%的氨基聚亚甲基膦酸,为0.02〜0.5质量% 氢氧化钾和水,pH为7.5至8.5。 另外,提供了使用该被检体组合物的半导体装置的制造方法。
    • 8. 发明申请
    • MECHANICAL VALVE
    • 机械阀门
    • US20090159823A1
    • 2009-06-25
    • US12334326
    • 2008-12-12
    • Hiroshi MatsunagaAtsushi Saito
    • Hiroshi MatsunagaAtsushi Saito
    • F16K31/02
    • F16K11/07F16K31/082
    • A mechanical valve has a main body having a cylinder hole formed therein, a movable element that is inserted into the cylinder hole and that moves forwardly and rearwardly, and a drive section that drives the movable element. A plurality of openings through which air passes are formed in an internal peripheral surface of the cylinder hole, and the openings are opened and closed as a result of forward and rearward movements of the movable element. A movable magnet is fastened to each of both ends of the movable element. Electromagnets opposing the respective movable magnets are provided in a drive section. The movable element is actuated by utilization of magnetic force of the electromagnets.
    • 机械阀具有形成在其中的气缸孔的主体,插入到气缸孔中并且向前和向后移动的可动元件和驱动可动元件的驱动部。 空气通过的多个开口形成在气缸孔的内周表面中,并且由于可动元件的向前和向后运动,开口被打开和关闭。 可移动磁体被固定到可动元件的两端中的每一端。 与各可动磁铁相对的电磁铁设置在驱动部中。 通过利用电磁铁的磁力来致动可动元件。