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1. 发明申请

US20080142898A1 Semiconductor integrated circuit 有权
标题翻译：半导体集成电路
公开(公告)号：US20080142898A1
公开(公告)日：2008-06-19
申请号：US11979669
申请日：2007-11-07
申请人： Shinji Watanabe , Daisaku Ikoma , Kyoji Yamashita , Katsuhiro Ootani
发明人： Shinji Watanabe , Daisaku Ikoma , Kyoji Yamashita , Katsuhiro Ootani
IPC分类号： H01L27/092
CPC分类号： H01L27/0207 , H01L21/82385 , H01L21/823892 , H01L27/0922
摘要： An integrated circuit includes: a first well of a first conductivity type; a second well of a second conductivity type coming into contact with the first well at a well boundary extending in a gate length direction; a first transistor having a first active region of the second conductivity type provided in the first well; and a second transistor which has a second active region of the second conductivity type provided in the first well and differing from the first active region in length in a gate width direction. The center location of the first active region in the gate width direction is aligned with the center location of the second active region in the gate width direction with reference to the well boundary.
摘要翻译：集成电路包括：第一导电类型的第一阱; 第二导电类型的第二阱在沿栅极长度方向延伸的阱边界处与第一阱接触; 第一晶体管，具有设置在第一阱中的第二导电类型的第一有源区; 以及第二晶体管，其具有设置在第一阱中的第二导电类型的第二有源区，并且与栅极宽度方向上的第一有源区的长度不同。第一有源区域在栅极宽度方向上的中心位置与第二有源区域相对于阱边界在栅极宽度方向上的中心位置对准。

2. 发明申请

US20080021689A1 Method for designing semiconductor integrated circuit and method of circuit simulation 审中-公开
标题翻译：半导体集成电路设计方法及电路仿真方法
公开(公告)号：US20080021689A1
公开(公告)日：2008-01-24
申请号：US11812705
申请日：2007-06-21
申请人： Kyoji Yamashita , Daisaku Ikoma , Yasuyuki Sahara , Katsuhiro Ootani , Shinji Watanabe
发明人： Kyoji Yamashita , Daisaku Ikoma , Yasuyuki Sahara , Katsuhiro Ootani , Shinji Watanabe
IPC分类号： G06F17/50
CPC分类号： G06F17/5063 , G06F17/5036
摘要： By using, as a model expression, an expression showing an inverse proportion between a change rate ΔIdsat/Idsat of saturated current value and a product of a gate protrusion length E1 and a gate width Wg of a transistor and a coefficient, modeling is executed for a transistor property that depends on the gate protrusion length. This provides a circuit simulation that takes into consideration the gate protrusion length of a gate electrode.
摘要翻译：通过使用作为模型表达式，表示在饱和电流值的变化率DeltaIdsat / Idsat与栅极突起长度E 1与晶体管的栅极宽度Wg的乘积与系数之间成反比的表达式，进行建模对于取决于栅极突起长度的晶体管性质。这提供了考虑栅电极的栅极突起长度的电路模拟。

3. 发明授权

US07476957B2 Semiconductor integrated circuit 有权
标题翻译：半导体集成电路
公开(公告)号：US07476957B2
公开(公告)日：2009-01-13
申请号：US11979669
申请日：2007-11-07
申请人： Shinji Watanabe , Daisaku Ikoma , Kyoji Yamashita , Katsuhiro Ootani
发明人： Shinji Watanabe , Daisaku Ikoma , Kyoji Yamashita , Katsuhiro Ootani
IPC分类号： H01L21/26
CPC分类号： H01L27/0207 , H01L21/82385 , H01L21/823892 , H01L27/0922
摘要： An integrated circuit includes: a first well of a first conductivity type; a second well of a second conductivity type coming into contact with the first well at a well boundary extending in a gate length direction; a first transistor having a first active region of the second conductivity type provided in the first well; and a second transistor which has a second active region of the second conductivity type provided in the first well and differing from the first active region in length in a gate width direction. The center location of the first active region in the gate width direction is aligned with the center location of the second active region in the gate width direction with reference to the well boundary.
摘要翻译：集成电路包括：第一导电类型的第一阱; 第二导电类型的第二阱在沿栅极长度方向延伸的阱边界处与第一阱接触; 第一晶体管，具有设置在第一阱中的第二导电类型的第一有源区; 以及第二晶体管，其具有设置在第一阱中的第二导电类型的第二有源区，并且与栅极宽度方向上的第一有源区的长度不同。第一有源区域在栅极宽度方向上的中心位置与第二有源区域相对于阱边界在栅极宽度方向上的中心位置对准。

4. 发明申请

US20080072199A1 Method for designing semiconductor integrated circuit 审中-公开
标题翻译：半导体集成电路设计方法
公开(公告)号：US20080072199A1
公开(公告)日：2008-03-20
申请号：US11709749
申请日：2007-02-23
申请人： Kyoji Yamashita , Daisaku Ikoma , Shinji Watanabe , Katsuhiro Ootani
发明人： Kyoji Yamashita , Daisaku Ikoma , Shinji Watanabe , Katsuhiro Ootani
IPC分类号： G06F17/50
CPC分类号： G06F17/5036
摘要： The effective distance Deff_i between a well boundary and an active region of a transistor is used as a parameter for expressing a well proximity effect. For example, a delay library is created using the rising time Tslew of a signal input to the gate, load capacitance Cload at the output side and Deff_i. The use of the effective distance Deff_i between the well boundary and the transistor allows very simple modeling to be accurately performed, so that a gate-level simulation considering a well proximity effect at an LSI level is enabled.
摘要翻译：使用晶体管的阱边界和有源区之间的有效距离Deff_i作为用于表示良好邻近效应的参数。例如，使用输入到门的信号的上升时间Tslew，输出侧的负载电容Cload和Deff_i来创建延迟库。在井边界和晶体管之间使用有效距离Deff_i允许精确地执行非常简单的建模，使得考虑到在LSI级别的良好邻近效应的栅极级仿真是可以实现的。

5. 发明申请

US20070111405A1 Design method for semiconductor integrated circuit 审中-公开
标题翻译：半导体集成电路设计方法
公开(公告)号：US20070111405A1
公开(公告)日：2007-05-17
申请号：US11518199
申请日：2006-09-11
申请人： Shinji Watanabe , Kyoji Yamashita , Katsuhiro Ootani
发明人： Shinji Watanabe , Kyoji Yamashita , Katsuhiro Ootani
IPC分类号： H01L21/8232 , H01L21/335
CPC分类号： H01L27/0207 , H01L27/11807
摘要： In a standard cell in which an active area and a gate conductor are provided, the active area has a largest length in a gate width direction at an end thereof in a gate length direction.
摘要翻译：在设置有源区和栅极导体的标准单元中，有源区在栅极长度方向的端部具有栅极宽度方向上的最大长度。

6. 发明申请

US20150162594A1 INJECTION METHOD FOR INJECTING ELECTROLYTE AND INJECTION APPARATUS THEREFOR 有权
标题翻译：注射电解质和注射装置的注射方法
公开(公告)号：US20150162594A1
公开(公告)日：2015-06-11
申请号：US14412365
申请日：2012-07-05
申请人： Shinji Watanabe
发明人： Shinji Watanabe
IPC分类号： H01M2/36
CPC分类号： H01M2/361 , H01M2/362
摘要： [Object] It is an object to provide an injection method for injecting an electrolyte and an electrolyte injection apparatus which allow the electrolyte to be injected and filled into an electrode assembly within an outer can with favorable permeation, thereby easily manufacturing an electrolyte secondary battery having favorable cycle characteristics at good yield.[Solution] A solution injection nozzle 10 is inserted into a solution injection hole 101 of an outer can 100 in which an electrode assembly 110 is stored, and the solution injection hole 101 is hermetically sealed by a pressure reducing pad 11 provided so as to surround a periphery of the solution injection nozzle 10. An inside of the outer can 100 is made into a negative pressure through the pressure reducing pad 11, and an electrolyte L is supplied from the solution injection nozzle 10 into the outer can 100. The outer can 100 is rotated with the solution injection nozzle 10 as a rotation center.
摘要翻译：本发明的目的是提供一种用于注入电解质的注入方法和电解质注入装置，该电解质和电解质注入装置允许将电解液注入并填充到具有良好渗透性的外罐内的电极组件中，从而容易地制造具有良好的循环特性。 [解决方案]将溶液注入喷嘴10插入其中存储电极组件110的外罐100的溶液注入孔101中，并且溶液注入孔101被设置为围绕的减压垫11气密密封溶液注射喷嘴10的周边。外罐100的内部通过减压垫11制成负压，并且电解液L从溶液喷嘴10供应到外罐100中。外罐 100以溶液注入喷嘴10为旋转中心旋转。

7. 发明授权

US08870710B2 Vehicle drive control system 有权
标题翻译：车辆驱动控制系统
公开(公告)号：US08870710B2
公开(公告)日：2014-10-28
申请号：US13232537
申请日：2011-09-14
申请人： Shinji Watanabe , Nozomu Kamioka , Kensuke Hayashi
发明人： Shinji Watanabe , Nozomu Kamioka , Kensuke Hayashi
IPC分类号： B60W10/08 , B60W30/18 , B60W10/30 , B60W10/06 , F02N11/08 , F02N11/04
CPC分类号： B60W10/06 , B60W10/30 , B60W30/18018 , B60W30/18063 , B60W2510/0604 , B60W2510/0638 , B60W2510/0676 , B60W2510/0685 , B60W2510/105 , B60W2540/10 , B60W2540/12 , B60W2710/0644 , F02N11/04 , F02N11/0814 , F02N11/0822 , F02N2011/0896 , F02N2200/022 , F02N2300/104 , F02N2300/2004 , Y02T10/48 , Y02T10/7258 , Y10T477/24
摘要： A vehicle drive control system includes a motor coupled with the driving shaft of an internal combustion engine so that torque can be transmitted to the drive wheels when fuel supply to the engine is cut off. The vehicle travels in a creeping mode in this state while motoring of the engine is performed through driving force of the motor. When accelerator depression is detected, fuel injection into a cylinder waiting for the intake stroke of the engine is begun and the engine is started. The crank angle position at a time when fuel injection is started is utilized as a reference position. When the crankshaft of the engine rotates from the reference crank angle position to a predetermined crank angle position, driving by the motor is stopped and the vehicle is then driven by the engine.
摘要翻译：车辆驱动控制系统包括与内燃机的驱动轴结合的马达，使得在向发动机供油的燃料被切断时扭矩可以传递到驱动轮。在该状态下，车辆以爬行模式行驶，同时通过马达的驱动力来进行发动机的驱动。当检测到加速器下压时，开始向等待发动机的进气冲程的气缸中的燃料喷射，并且发动机起动。燃料喷射开始时的曲柄角位置用作基准位置。当发动机的曲轴从基准曲柄角位置旋转到预定的曲柄角位置时，停止通过马达的驱动，然后由发动机驱动车辆。

8. 发明授权

US08731316B2 Information processing apparatus and method, image providing system and image providing method, and program for reducing quality deterioration of an image 有权
标题翻译：信息处理装置和方法，图像提供系统和图像提供方法以及用于降低图像质量劣化的程序
公开(公告)号：US08731316B2
公开(公告)日：2014-05-20
申请号：US13423655
申请日：2012-03-19
申请人： Shinji Watanabe , Tsuneo Hayashi , Masahito Yamane , Takeshi Uemori
发明人： Shinji Watanabe , Tsuneo Hayashi , Masahito Yamane , Takeshi Uemori
IPC分类号： G06K9/36 , G06K9/46
CPC分类号： H04N13/161 , H04N13/194 , H04N21/816
摘要： An information processing apparatus includes a two-dimensional orthogonal transform coding data acquisition unit for sequentially acquiring two-dimensional orthogonal transform coding data acquired by transforming three-dimensional orthogonal transform coding data generated from a plurality of images, a two-dimensional orthogonal transform coefficient data generation unit for generating a plurality of pieces of two-dimensional orthogonal transform coefficient data using the plurality of pieces of acquired two-dimensional orthogonal transform coding data, and a three-dimensional transformation unit for encoding three-dimensional orthogonal transform coefficient data acquired by transforming the plurality of pieces of generated two-dimensional orthogonal transform coefficient data.
摘要翻译：一种信息处理装置，包括：二维正交变换编码数据取得部，其将通过变换从多个图像生成的三维正交变换编码数据变换得到的二维正交变换编码数据，二维正交变换系数数据生成单元，用于使用所述多个获取的二维正交变换编码数据生成多个二维正交变换系数数据;以及三维变换单元，用于对通过变换获取的三维正交变换系数数据进行编码多个生成的二维正交变换系数数据。

9. 发明授权

US08726819B2 Burner 有权
标题翻译：刻录机
公开(公告)号：US08726819B2
公开(公告)日：2014-05-20
申请号：US13057762
申请日：2009-03-27
申请人： Masato Tamura , Shinji Watanabe
发明人： Masato Tamura , Shinji Watanabe
IPC分类号： F23C1/10
CPC分类号： F23C7/004 , F23C7/008 , F23D1/02 , F23D2201/10 , F23D2900/00003 , F23D2900/01001
摘要： A burner is arranged axially of a burner throat on a furnace wall and includes a nozzle body housed in a wind box and with a secondary air adjuster on a leading end of the nozzle body. The adjuster includes an end plate for defining together with a near-furnace side surface of the wind box a cylindrical space opened in an outer circumference thereof, a slide damper axially slidable for surrounding the cylindrical space, air vanes arranged at predetermined intervals and circumferentially of the cylindrical space for swirling a secondary air and drive means and for slide movement of the slide damper.
摘要翻译：燃烧器轴向设置在炉壁上的燃烧器喉部，并且包括容纳在风箱中的喷嘴主体和在喷嘴体的前端上的二次空气调节器。调节器包括端板，用于与风箱的近炉侧表面一起限定在其外圆周上开口的圆柱形空间，可滑动地围绕圆柱形空间的滑动阻尼器，以预定间隔布置的空气叶片，用于旋转二次空气和驱动装置的圆柱形空间以及用于滑动阻尼器的滑动运动。

10. 发明授权

US08625296B2 Mount board and electronic device 有权
公开(公告)号：US08625296B2
公开(公告)日：2014-01-07
申请号：US13158037
申请日：2011-06-10
申请人： Shinji Watanabe , Nobuhiro Mikami , Junya Sato , Kenichiro Fujii , Katsumi Abe , Atsumasa Sawada
发明人： Shinji Watanabe , Nobuhiro Mikami , Junya Sato , Kenichiro Fujii , Katsumi Abe , Atsumasa Sawada
IPC分类号： H05K7/00
CPC分类号： H05K1/18 , H01L24/18 , H01L24/24 , H01L24/82 , H01L2224/16225 , H01L2224/16227 , H01L2224/18 , H01L2224/24051 , H01L2224/24226 , H01L2224/24998 , H01L2224/32225 , H01L2224/73267 , H01L2224/76155 , H01L2224/82102 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01019 , H01L2924/01029 , H01L2924/01033 , H01L2924/01078 , H01L2924/01082 , H01L2924/014 , H01L2924/12042 , H01L2924/1515 , H01L2924/15151 , H01L2924/19041 , H01L2924/19043 , H01L2924/19103 , H01L2924/19104 , H01L2924/19105 , H01L2924/3011 , H01L2924/3511 , H05K1/023 , H05K1/0271 , H05K1/0284 , H05K1/185 , H05K1/189 , H05K3/0014 , H05K3/32 , H05K3/4644 , H05K2201/0187 , H05K2201/0191 , H05K2201/0195 , H05K2201/09018 , H05K2201/09036 , H05K2201/09045 , H05K2201/09118 , H05K2201/09436 , H05K2201/10477 , H05K2201/10515 , H05K2201/1053 , H05K2201/10636 , H05K2201/10734 , H05K2203/1469 , H05K2203/302 , Y02P70/611 , H01L2924/00
摘要： An object of the present invention is to allow stress that may be applied to a semiconductor package to be suppressed, when the semiconductor package is mounted on a curved board. In a mount board 1, a semiconductor package 20 is mounted on a curved board 10 including a curved surface on at least a portion thereof. The curved board 10 includes a pedestal portion 13a disposed on a region of the curved surface portion where the semiconductor package 20 is mounted and having an upper surface thereof formed flat, and a plurality of pad portions 15a disposed on the flat surface of the pedestal portion 13a. The pedestal portion 13a is formed of an insulating material. The semiconductor package 20 is mounted on the pad portions 15a.

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