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    • 1. 发明授权
    • eFuse resistance sensing scheme with improved accuracy
    • eFuse电阻传感方案具有提高的精度
    • US07501879B1
    • 2009-03-10
    • US11717836
    • 2007-03-13
    • Kwansuhk OhRaymond C. PangHsung Jai ImSunhom Paak
    • Kwansuhk OhRaymond C. PangHsung Jai ImSunhom Paak
    • G11C17/18H01H85/00
    • G11C17/16G11C17/18
    • An eFuse sensing circuit replaces the inverters used to provide the “read” output state of a conventional eFuse circuit. The sensing circuit includes a comparator with one input coupled to the eFuse circuitry, and a second input coupled to a reference voltage generator circuit. The reference voltage generator circuit includes an internal resistor. Transistors of the sense circuit are provided to mimic the transistors of the eFuse circuit, so that variations of transistors due to process, voltage and temperature will be substantially the same. The resistor of the sense circuit is then effectively compared with the resistance of the eFuse by the comparator irrespective of temperature and process variations.
    • eFuse感测电路取代了用于提供常规eFuse电路的“读取”输出状态的逆变器。 感测电路包括具有耦合到eFuse电路的一个输入和耦合到参考电压发生器电路的第二输入的比较器。 参考电压发生器电路包括内部电阻器。 提供感测电路的晶体管以模拟eFuse电路的晶体管,使得由于工艺,电压和温度而导致的晶体管的变化将基本相同。 然后将感测电路的电阻与比较器的eFuse的电阻进行有效的比较,而与温度和工艺变化无关。
    • 5. 发明授权
    • Scalable columnar boundary scan architecture for integrated circuits
    • 用于集成电路的可扩展柱状边界扫描架构
    • US07451369B1
    • 2008-11-11
    • US11498372
    • 2006-08-03
    • Kwansuhk OhRaymond C. Pang
    • Kwansuhk OhRaymond C. Pang
    • G01R31/28
    • G01R31/318552
    • An integrated circuit having a scalable boundary scan architecture. Logic elements, each including at least one data storage element, are arranged in rows and columns. A data distribution system couples the data storage elements together to form a boundary scan chain that traverses the columns in order, e.g., a first column, then a second column, and so forth, from top to bottom in each column. A clock distribution system is coupled to each of the data storage elements in the chain, and provides a clock signal to the first and second columns, again from top to bottom. The clock distribution system provides the clock signal to the top of the second column prior to providing it to the top of the first column. In some embodiments, an additional flip-flop is added to the boundary scan chain for each logic element, to increase the overall operating frequency of the scan chain.
    • 具有可扩展边界扫描架构的集成电路。 每个包括至少一个数据存储元件的逻辑元件以行和列排列。 数据分配系统将数据存储元件耦合在一起以形成跨越列的边界扫描链,从而从每个列的顶部到底部依次穿过列,例如第一列,然后是第二列等等。 时钟分配系统耦合到链中的每个数据存储元件,并且从顶部到底部再次向第一和第二列提供时钟信号。 时钟分配系统在将其提供到第一列的顶部之前将时钟信号提供给第二列的顶部。 在一些实施例中,为每个逻辑元件向边界扫描链增加了一个附加的触发器,以增加扫描链的总体工作频率。
    • 6. 发明授权
    • Delay line trim unit having consistent performance under varying process and temperature conditions
    • 延迟线修剪单元在不同的工艺和温度条件下具有一致的性能
    • US06664837B1
    • 2003-12-16
    • US10247241
    • 2002-09-18
    • Kwansuhk OhRaymond C. Pang
    • Kwansuhk OhRaymond C. Pang
    • H03H1126
    • H03L7/0814H03K5/133H03K2005/00065H03K2005/00221H03L7/0818
    • A delay circuit has a delay that is consistent under varying process and temperature conditions. The delay through a delay path is controlled by inserting resistors on the pull-up and pull-down paths of the delaying inverters. Each resistor has a resistance value that is determined by a varying a number of enabled similarly-sized transistors coupled in parallel across the resistor, rather than by varying the size of a single transistor. In one embodiment, a first transistor in each resistor is always enabled, while additional transistors are enabled using select signals. In one embodiment, the select signals are provided by configuration memory cells in a PLD. Other embodiments include additional delay paths and a multiplexer circuit that selects one of the delay paths. The described delay circuit is particularly useful in a DLL trim unit, where variations between resistors can cause jitter and locking problems in the DLL.
    • 延迟电路具有在变化的工艺和温度条件下是一致的延迟。 通过延迟路径的延迟通过在延迟逆变器的上拉和下拉路径上插入电阻来控制。 每个电阻器具有由在电阻器上并联耦合的使能相似尺寸的晶体管的数量的变化确定的电阻值,而不是通过改变单个晶体管的尺寸来确定。 在一个实施例中,每个电阻器中的第一晶体管总是使能,而使用选择信号启用附加晶体管。 在一个实施例中,选择信号由PLD中的配置存储器单元提供。 其他实施例包括额外的延迟路径和选择延迟路径之一的多路复用器电路。 所描述的延迟电路在DLL修剪单元中特别有用,其中电阻之间的变化可能导致DLL中的抖动和锁定问题。
    • 9. 发明授权
    • Trim unit having less jitter
    • 修剪单元具有较少的抖动
    • US07190202B1
    • 2007-03-13
    • US11099908
    • 2005-04-05
    • Kwansuhk OhRaymond C. Pang
    • Kwansuhk OhRaymond C. Pang
    • H03L7/00
    • H03L7/0814H03L7/0818
    • A trim unit includes a delay line and one or more individually selectable load elements. The delay line has a first end to receive an input clock signal, and has a second end to generate an output clock signal. Each load element includes a select transistor and a load capacitor coupled in series between the delay line and ground potential, and includes a filter circuit having an input to receive a select signal and having an output coupled to a gate of the select transistor. Upon assertion of each select signal, the filter circuit gradually charges the gate of the select transistor, which in turn causes the load element to gradually increase the phase-delay between the input and output clock signals.
    • 修剪单元包括延迟线和一个或多个可单独选择的负载元件。 延迟线具有接收输入时钟信号的第一端,并具有产生输出时钟信号的第二端。 每个负载元件包括在延迟线和接地电位之间串联耦合的选择晶体管和负载电容器,并且包括具有输入以接收选择信号并具有耦合到选择晶体管的栅极的输出的滤波器电路。 在确定每个选择信号时,滤波器电路逐渐对选择晶体管的栅极充电,这又导致负载元件逐渐增加输入和输出时钟信号之间的相位延迟。
    • 10. 发明授权
    • Interleaved memory cell with single-event-upset tolerance
    • 具有单事件不正常容限的交错记忆单元
    • US07515452B1
    • 2009-04-07
    • US11649447
    • 2007-01-03
    • Jan L. de JongSusan Xuan NguyenRaymond C. Pang
    • Jan L. de JongSusan Xuan NguyenRaymond C. Pang
    • G11C11/00
    • G11C8/04H03K19/00392H03K19/1776H03K19/17764H03K19/1778
    • A memory array has a first memory cell with a plurality of transistors connected so as to restore a data value to a node of the memory cell to an initial value following an event upsetting the initial value. A first portion of the plurality of transistors is in a first cell portion and a second portion of the plurality of transistors is in a second cell portion. A second memory cell has a third cell portion and a fourth cell portion. The third cell portion is between the first cell portion and the second cell portion and adjacent to each of the first cell portion and the second cell portion. In a particular embodiment, the memory cell is a single-event-upset (“SEU”) tolerant memory cell and the first and second cell portions are each a half cell of a sixteen transistor memory cell.
    • 存储器阵列具有连接有多个晶体管的第一存储器单元,以便在事件颠倒初始值之后将数据值恢复到存储器单元的节点到初始值。 多个晶体管的第一部分在第一单元部分中,并且多个晶体管的第二部分在第二单元部分中。 第二存储单元具有第三单元部分和第四单元部分。 第三单元部分在第一单元部分和第二单元部分之间并且与第一单元部分和第二单元部分中的每一个相邻。 在特定实施例中,存储器单元是单事件不正常(“SEU”)容限存储器单元,并且第一和第二单元部分各自是十六晶体管存储单元的半单元。