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1. 发明授权

US06399552B1 Aqueous cleaning solution for removing contaminants surface of circuit substrate cleaning method using the same 失效
标题翻译：用于清除污染物表面的水性清洁溶液使用其清洗方法
公开(公告)号：US06399552B1
公开(公告)日：2002-06-04
申请号：US09451844
申请日：1999-12-01
申请人： Kwang-wook Lee , Kun-tack Lee , Yong-sun Ko , Chang-lyong Song
发明人： Kwang-wook Lee , Kun-tack Lee , Yong-sun Ko , Chang-lyong Song
IPC分类号： C11D708
CPC分类号： C11D11/0047 , C11D7/06 , C11D7/08 , C11D7/10 , C11D7/265
摘要： A cleaning solution for removing contaminants from the surface of an integrated circuit substrate includes a fluoride reducing agent, an organic acid containing a carboxyl group, an alkaline pH controller and water. The pH of the cleaning solution is 3.5-8.8. The cleaning solution is used at a low temperature, such as room temperature, which is lower than that for conventional cleaning solutions. Therefore, the cleaning solution does not evaporate. Furthermore, a cleaning method using the cleaning solution does not require a pre-ashing step to reinforce the cleaning agent, nor is an alcohol rinse step required. The cleaning solution is removed by rinsing with deionized water. Therefore, the cleaning method using the cleaning solution is quicker and less costly than conventional cleaning methods.
摘要翻译：用于从集成电路基板的表面除去污染物的清洗液包括氟化物还原剂，含有羧基的有机酸，碱性pH控制剂和水。清洗液的pH值为3.5-8.8。清洁溶液在比常规清洁溶液低的低温（例如室温）下使用。因此，清洗液不会蒸发。此外，使用清洁溶液的清洁方法不需要预灰化步骤来加强清洁剂，也不需要醇漂洗步骤。通过用去离子水冲洗除去清洁溶液。因此，使用清洁溶液的清洁方法比常规清洁方法更快，成本更低。

2. 发明授权

US06638855B1 Method of filling contact hole of semiconductor device 有权
标题翻译：填充半导体器件接触孔的方法
公开(公告)号：US06638855B1
公开(公告)日：2003-10-28
申请号：US09502200
申请日：2000-02-10
申请人： Kyu-hwan Chang , Yong-sun Ko , Chang-lyong Song , Seung-pil Chong
发明人： Kyu-hwan Chang , Yong-sun Ko , Chang-lyong Song , Seung-pil Chong
IPC分类号： H01L214763
CPC分类号： H01L21/02063 , H01L21/02046 , H01L21/31116 , H01L21/76814 , H01L21/76877
摘要： A method of filling a contact hole of a semiconductor device preceded by dry cleaning for removing a damaged layer resulting from dry etching is provided. The method includes selectively exposing an underlying material layer by a dry etch and dry cleaning including passing plasma excited from a source gas over the exposed underlying material layer to remove the damaged layer formed from the dry etch. Subsequently, an electrically conductive layer with which to fill the contact hole is formed. The formation of the electrically conductive layer is performed in a separate chamber connected sequentially to a chamber for performing the dry cleaning to prevent the exposed underlying material layer inside the dry cleaned contact hole from being exposed to a source of contamination.
摘要翻译：提供了一种在干法清洗之前填充半导体器件的接触孔的方法，用于去除由干蚀刻产生的损伤层。该方法包括通过干式蚀刻和干式清洗选择性地暴露下层材料层，包括使从源气体激发的等离子体流过暴露的下层材料层，以去除由干蚀刻形成的损伤层。随后，形成用于填充接触孔的导电层。导电层的形成在依次连接到用于执行干洗的室的单独的室中进行，以防止干式清洁的接触孔内的暴露的下层材料层暴露于污染源。

3. 发明授权

US5234864A Method for interconnecting layers in a semiconductor device using two etching gases 失效
标题翻译：使用两种蚀刻气体在半导体器件中互连层的方法
公开(公告)号：US5234864A
公开(公告)日：1993-08-10
申请号：US803448
申请日：1991-12-06
申请人： Jin-hong Kim , Chang-lyong Song
发明人： Jin-hong Kim , Chang-lyong Song
IPC分类号： H01L21/302 , H01L21/3065 , H01L21/311 , H01L21/3213 , H01L21/768 , H01L23/522
CPC分类号： H01L21/32136 , H01L21/31116 , H01L21/76804 , H01L23/5226 , H01L2924/0002 , Y10S148/131
摘要： A method for interconnecting layers in a semiconductor device is disclosed. The device includes a lower conductive layer formed by capping a second conductive layer on a first conductive layer, a contact window formed in an inter-insulating layer on the lower conductive layer, and an upper conductive layer connected to the lower conductive layer through the contact window. The contact window is formed by removing a portion of the inter-insulating layer where the contact will be formed using a first etching gas, and removing a portion of the second conductive layer where the contact will be formed using a second etching gas. The contact resistance becomes uniform by preventing the formation of a non-volatile mixture in the contact window, and the reliability of the device is improved by planarizing the surface of the lower conductive layer.
摘要翻译：公开了一种在半导体器件中互连层的方法。该器件包括通过在第一导电层上覆盖第二导电层而形成的下导电层，形成在下导电层上的绝缘层中的接触窗和通过接触连接到下导电层的上导电层窗口。通过使用第一蚀刻气体去除将形成接触的绝缘层的一部分并且使用第二蚀刻气体去除将形成接触的第二导电层的一部分来形成接触窗口。通过防止在接触窗中形成非挥发性混合物，接触电阻变得均匀，并且通过平坦化下导电层的表面来提高器件的可靠性。

4. 发明授权

US06406967B1 Method for manufacturing cylindrical storage electrode of semiconductor device 失效
标题翻译：半导体器件的圆柱形存储电极的制造方法
公开(公告)号：US06406967B1
公开(公告)日：2002-06-18
申请号：US09632583
申请日：2000-08-07
申请人： Dae-hyuk Chung , Chang-lyong Song
发明人： Dae-hyuk Chung , Chang-lyong Song
IPC分类号： H01L2120
CPC分类号： H01L27/10855 , H01L28/91
摘要： A method for manufacturing a cylindrical storage electrode of a semiconductor device includes forming a contact pad to be connected to an active region of a semiconductor substrate in an interlayer insulator film on the semiconductor substrate. Then, a silicon nitride layer as an etching stop layer is formed on the contact pad. Next, an insulating layer is formed on the silicon nitride layer. A portion of the surface of the silicon nitride layer is exposed by partially removing the insulating layer. Then, the exposed portion of the silicon nitride layer is removed using a wet etching process using a predetermined etchant to expose the surface of the contact pad. A conductive layer for a storage electrode is formed on the insulating layer and the surface of the exposed contact pad. Finally, a cylindrical storage electrode is completed by removing the upper portion of the conductive layer for a storage electrode, the insulating layer and the silicon nitride layer.
摘要翻译：一种用于制造半导体器件的圆柱形存储电极的方法包括在半导体衬底上的层间绝缘膜中形成要连接到半导体衬底的有源区的接触焊盘。然后，在接触焊盘上形成作为蚀刻停止层的氮化硅层。接下来，在氮化硅层上形成绝缘层。通过部分去除绝缘层来暴露氮化硅层表面的一部分。然后，使用预定的蚀刻剂使用湿式蚀刻工艺去除氮化硅层的暴露部分，以暴露接触焊盘的表面。在绝缘层和暴露的接触垫的表面上形成用于存储电极的导电层。最后，通过去除用于存储电极，绝缘层和氮化硅层的导电层的上部来完成圆柱形存储电极。

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