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1. 发明授权

US06869500B2 Method for processing a wafer and apparatus for performing the same 失效
标题翻译：晶圆加工方法及其制造方法
公开(公告)号：US06869500B2
公开(公告)日：2005-03-22
申请号：US10236939
申请日：2002-09-09
申请人： Kwang-Myung Lee , Mikio Takagi , Jae-Hyuk An , Seung-Ki Chae , Jea-Wook Kim
发明人： Kwang-Myung Lee , Mikio Takagi , Jae-Hyuk An , Seung-Ki Chae , Jea-Wook Kim
IPC分类号： H01L21/3065 , H01L21/00 , H01L21/304 , H01L21/306 , H01L21/311 , H05H1/00 , C23C16/00
CPC分类号： H01L21/02046 , H01L21/31116 , H01L21/67109
摘要： Disclosed are a method and an apparatus for processing a wafer in manufacturing a semiconductor device and a method and an apparatus for etching a material formed on the wafer, wherein first and second cooling parts adjust an ambient temperature near a plurality of wafers to a first temperature, the wafers are processed by introducing a reaction gas at the first temperature, then, a heating part rapidly raises the temperature of the atmosphere near the wafers from the first temperature to the second temperature to partially separate by-products produced during the processing, the second temperature is maintained to separate most of the by-products from the wafers, and the processing steps are implemented in-situ within the same space. Accordingly, a native oxide layer formed on several wafers can be etched and the reaction by-products can be removed in-situ in the same chamber so productivity is improved.
摘要翻译：公开了一种用于在制造半导体器件中处理晶片的方法和装置，以及用于蚀刻形成在晶片上的材料的方法和设备，其中第一和第二冷却部件将多个晶片附近的环境温度调节到第一温度，通过在第一温度下引入反应气体来处理晶片，然后，加热部分将晶片附近的气氛的温度从第一温度快速升高到第二温度，以部分地分离在处理期间产生的副产物，维持第二温度以将大部分副产物与晶片分离，并且处理步骤在同一空间内原位实施。因此，可以蚀刻形成在几个晶片上的自然氧化物层，并且可以在相同的室中原位除去反应副产物，从而提高生产率。

2. 发明申请

US20050130451A1 Method for processing a wafer and apparatus for performing the same 审中-公开
公开(公告)号：US20050130451A1
公开(公告)日：2005-06-16
申请号：US11050738
申请日：2005-02-07
申请人： Kwang-Myung Lee , Mikio Takagi , Jae-Hyuk An , Seung-Ki Chae , Jea-Wook Kim
发明人： Kwang-Myung Lee , Mikio Takagi , Jae-Hyuk An , Seung-Ki Chae , Jea-Wook Kim
IPC分类号： H01L21/3065 , H01L21/00 , H01L21/304 , H01L21/306 , H01L21/311 , H01L21/8242 , C23F1/00 , H01L21/26 , H01L21/324 , H01L21/42 , H01L21/477
CPC分类号： H01L21/02046 , H01L21/31116 , H01L21/67109
摘要： Disclosed are a method and an apparatus for processing a wafer in manufacturing a semiconductor device and a method and an apparatus for etching a material formed on the wafer, wherein first and second cooling parts adjust an ambient temperature near a plurality of wafers to a first temperature, the wafers are processed by introducing a reaction gas at the first temperature, then, a heating part rapidly raises the temperature of the atmosphere near the wafers from the first temperature to the second temperature to partially separate by-products produced during the processing, the second temperature is maintained to separate most of the by-products from the wafers, and the processing steps are implemented in-situ within the same space. Accordingly, a native oxide layer formed on several wafers can be etched and the reaction by-products can be removed in-situ in the same chamber so productivity is improved.

3. 发明申请

US20100184297A1 METHOD FOR PROTECTING SEMICONDUCTOR WAFER AND PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE 审中-公开
标题翻译：用于保护半导体晶体管的方法和用于生产半导体器件的方法
公开(公告)号：US20100184297A1
公开(公告)日：2010-07-22
申请号：US12665529
申请日：2008-06-20
申请人： Mikio Takagi , Seiichi Takahashi
发明人： Mikio Takagi , Seiichi Takahashi
IPC分类号： H01L21/306
CPC分类号： H01L21/02063 , H01J37/3244 , H01J37/32449 , H01L21/67069
摘要： [Task] In a proposed protection method, re-oxidation of a semiconductor wafer is prevented. The method is appropriate for fine patterned semiconductor device. A wafer is dry etched and is subjected to a next step of forming an electrode material film. The dry-etched wafer is maintained not re-oxidized until the next step. The dry etching reaction products are appropriately removed.[Means for Solution] A wafer, on which the dry etching reaction products remain, is protected by the reaction products. The wafer is held in an inert gas protective atmosphere having a pressure of 50 Pa or more and an atmospheric pressure or less, or is held in air equivalent to the air of a clean room or in a gas-mixture atmosphere of said air and an inert gas. The reaction products are decomposed and removed by heating immediately before the formation of an electrode-material film.
摘要翻译： [任务]在所提出的保护方法中，防止了半导体晶片的再氧化。该方法适用于精细图案化半导体器件。将晶片干蚀刻，并进行形成电极材料膜的下一步骤。干蚀刻的晶片保持不再氧化直到下一步骤。适当地除去干蚀刻反应产物。 [解决方案]残留有干蚀刻反应产物的晶片被反应产物保护。将晶片保持在压力为50Pa以上且大气压以下的惰性气体保护气氛中，或者保持在与洁净室的空气或空气的气体混合气氛相当的空气中，惰性气体。反应产物在形成电极材料膜之前立即加热分解和除去。

4. 发明申请

US20090117747A1 Method for Surface Treating Semiconductor 有权
标题翻译：表面处理半导体的方法
公开(公告)号：US20090117747A1
公开(公告)日：2009-05-07
申请号：US11990440
申请日：2006-08-15
申请人： Mikio Takagi , Seiichi Takahashi , Hiroaki Inoue , Masayuki Satou , Yutaka Miura
发明人： Mikio Takagi , Seiichi Takahashi , Hiroaki Inoue , Masayuki Satou , Yutaka Miura
IPC分类号： H01L21/3065
CPC分类号： H01L21/67109 , H01L21/02046 , H01L21/306 , H01L21/67017 , H01L21/67757
摘要： [Task] Native oxide film on a semiconductor silicon wafer(s) is dry etched at a temperature of 50° C. or less. Hydrogen treatment is then carried out a temperature of 100° C. or more to bond the dangling bonds with hydrogen. A jig 9 that has been used is again used for loading new semiconductor silicon wafer(s) 10. The wafer(s) on the jig 9 is subjected to removal of a native oxide film and then hydrogen bonding. The resultant heat remains in jig and makes it difficult to maintain the wafers to temperature appropriate to removal of a native oxide film.[Means for Solution] After treatment of hydrogen bonding, inert gas having temperature of from 0 to −30° C. is injected into reaction vessel 5 and/or treatment preparing vessel 21, in which a native oxide film has been removed.
摘要翻译： [任务]半导体硅晶片上的天然氧化物膜在50℃以下的温度下进行干法蚀刻。然后进行氢气处理，其温度为100℃以上，以使悬挂键与氢键合。已经使用的夹具9再次用于装载新的半导体硅晶片10.将夹具9上的晶片除去自然氧化膜，然后氢键合。所得到的热量保留在夹具中，并且使得难以将晶片保持适于去除天然氧化物膜的温度。 [解决方案]在氢键合处理之后，将温度为0〜-30℃的惰性气体注入已除去自然氧化膜的反应容器5和/或处理制备容器21中。

5. 发明授权

US06248672B1 Method of producing a semiconductor device in a heating furnace having a reaction tube with a temperature-equalizing zone 失效
标题翻译：在具有温度均衡区的反应管的加热炉中制造半导体器件的方法
公开(公告)号：US06248672B1
公开(公告)日：2001-06-19
申请号：US09310760
申请日：1999-05-13
申请人： Mikio Takagi
发明人： Mikio Takagi
IPC分类号： C23C16455
CPC分类号： C23C16/45521 , C23C16/4401 , C23C16/4412 , C23C16/455 , C23C16/45591 , C23C16/4584 , H01L21/67017 , H01L21/67109 , H01L21/67115
摘要： In a method for producing a semiconductor device using a dual tube reactor, inert gas is fed into the vertical reaction-tube, a reaction gas is introduced into the vertical reaction-tube, the inert gas is exhausted through the annular channel formed between the inner tube and the outer tube at a bottom portion of the vertical reaction-tube; and, a wafer is heat treated in the vertical reaction-tube by means of a heating furnace. In order to decrease the number and size of the particles, the wafer is displaced upward and then positioned at a level substantially the same as or above the top end of the inner tube, and the reaction gas is introduced into the vertical reaction-tube at or above the position of the wafer. Furthermore, the inert gas is caused to flow from a bottom portion of the inner tube toward the wafer positioned as above. As a result, inflow of the reaction gas into the inner tube is impeded, and the generation of particles there can be lessened.
摘要翻译：在使用双管反应器的半导体器件的制造方法中，将惰性气体供给到垂直反应管中，将反应气体引入到垂直反应管中，惰性气体通过内部形成的环状通路排出管和外管在垂直反应管的底部; 并且通过加热炉在垂直反应管中对晶片进行热处理。为了减小颗粒的数量和尺寸，将晶片向上移位，然后定位在与内管的顶端基本相同或高于内管的水平上，并将反应气体引入垂直反应管中或高于晶片的位置。此外，使惰性气体从内管的底部朝向如上定位的晶片流动。结果，阻止反应气体进入内管，并且可以减少颗粒的产生。

6. 发明授权

US06204194B1 Method and apparatus for producing a semiconductor device 失效
标题翻译：用于制造半导体器件的方法和装置
公开(公告)号：US06204194B1
公开(公告)日：2001-03-20
申请号：US09231821
申请日：1999-01-15
申请人： Mikio Takagi
发明人： Mikio Takagi
IPC分类号： H01L2131
CPC分类号： C23C16/45504 , C23C16/4412 , C23C16/455 , C23C16/45521 , C23C16/45578 , C23C16/45591 , C23C16/4584 , H01L21/02164 , H01L21/02271 , H01L21/31612
摘要： The film growth speed of a conventional vertical heating method, such as SiO2 film, polycrystalline Si film or the like of a semiconductor device, is enhanced by means of discharging and sucking the reaction gas onto and from the Si wafers placed horizontally in the vertical furnace. The wafers are rotated and the wafer-distance is set at 5 mm or more.
摘要翻译：通过将反应气体排放到水平放置在立式炉中的Si晶片上并从其中吸出反应气体来提高常规垂直加热方法的膜生长速度，例如半导体器件的SiO 2膜，多晶Si膜等。晶片旋转，晶片间距设定在5mm以上。

7. 发明授权

US5445676A Method and apparatus for manufacturing semiconductor devices 失效
标题翻译：用于制造半导体器件的方法和装置
公开(公告)号：US5445676A
公开(公告)日：1995-08-29
申请号：US321745
申请日：1994-10-12
申请人： Mikio Takagi
发明人： Mikio Takagi
IPC分类号： C23C16/46 , C23C16/54 , C30B31/12 , F27B17/00 , F27D3/00 , H01L21/00 , C23C16/00
CPC分类号： H01L21/67115 , C23C16/46 , C23C16/54 , C30B31/12 , F27B17/0025 , F27D2003/0075 , Y10T29/41
摘要： A wafer(s) for producing semiconductor devices is subjected to heat treatment in a vertical thermal reactor, which is provided with an electric heating means setting a first temperature and another electric heating means setting a second temperature higher than the first temperature. The wafer(s) is moved upwards and is subjected to a treatment in the second region of the vertical thermal reactor; and, is reverted to the first region. Rapid thermal processing of 6 or 8 inch wafer(s) is possible without causing slip lines.
摘要翻译：用于制造半导体器件的晶片在垂直热反应器中进行热处理，所述立式热反应器设置有设定第一温度的电加热装置和设置高于第一温度的第二温度的另一电加热装置。将晶片向上移动并在垂直热反应器的第二区域中进行处理; 并被恢复到第一个地区。 6或8英寸晶圆的快速热处理是可能的，而不会导致滑移线。

8. 发明授权

US4532022A Process of producing a semiconductor device 失效
标题翻译：制造半导体器件的工艺
公开(公告)号：US4532022A
公开(公告)日：1985-07-30
申请号：US499477
申请日：1983-05-31
申请人： Kanetake Takasaki , Mikio Takagi , Kenji Koyama
发明人： Kanetake Takasaki , Mikio Takagi , Kenji Koyama
IPC分类号： H01L21/318 , C23C16/30 , G11C16/02 , G11C17/00 , H01L21/314 , H01L21/56 , H01L21/8247 , H01L23/29 , H01L23/31 , H01L29/51 , H01L29/788 , H01L29/792 , C23C15/00
CPC分类号： H01L29/518 , C23C16/308 , H01L21/3144 , H01L21/3145 , H01L21/56 , H01L23/291 , H01L23/3171 , H01L29/7881 , H01L2924/0002 , Y10S148/043 , Y10S148/081 , Y10S148/114 , Y10S438/958 , Y10S438/972
摘要： A silicon nitride film containing from 20 to 70% oxygen, for use as a surface passivation film, has enhanced ultraviolet ray transmissivity while exhibiting the desirable moisture proofness quality of a silicon nitride film.
摘要翻译：含有20〜70％氧的用作表面钝化膜的氮化硅膜具有增强的紫外线透射率，同时表现出氮化硅膜所需的防潮性。

9. 发明授权

US4263087A Process for producing epitaxial layers 失效
标题翻译：生产外延层的方法
公开(公告)号：US4263087A
公开(公告)日：1981-04-21
申请号：US120094
申请日：1980-02-11
申请人： Kaoru Tanabe , Yoshifumi Nomura , Mamoru Maeda , Mikio Takagi
发明人： Kaoru Tanabe , Yoshifumi Nomura , Mamoru Maeda , Mikio Takagi
IPC分类号： C30B25/02 , C30B25/10 , C30B25/12 , H01L21/205 , H01L21/31 , C23C13/00
CPC分类号： C30B29/06 , C30B25/10 , C30B25/12 , H01L21/02381 , H01L21/02532 , H01L21/0262
摘要： Epitaxial layers are formed by introducing a reaction gas mixture into a reaction vessel in which semiconductor substrates are located, under a pressure of not higher than 1333 Pa (10 Torr), and heating said semiconductor substrates by high frequency induction power so that layers grow epitaxially on said semiconductor substrates. The frequency f of high frequency power is not higher than 50 kHz, and the pressure P in said reaction vessel is maintained in the following range ##STR1## wherein, P is the pressure in units of Pa or Torr in the reaction vessel and f is the frequency in kHz of said high frequency power.
摘要翻译：通过在不高于1333Pa（10Torr）的压力下将反应气体混合物引入到其中位于半导体衬底的反应容器中并通过高频感应功率加热所述半导体衬底以使得层外延生长来形成外延层在所述半导体衬底上。高频功率的频率f不高于50kHz，并且所述反应容器中的压力P保持在以下范围内：其中P是反应容器中的Pa或Torr单位的压力 f是所述高频功率的kHz的频率。

10. 发明授权

US3940288A Method of making a semiconductor device 失效
标题翻译：制造半导体器件的方法
公开(公告)号：US3940288A
公开(公告)日：1976-02-24
申请号：US468876
申请日：1974-05-10
申请人： Mikio Takagi , Hajime Kamioka , Kazufumi Nakayama , Haruo Shimoda
发明人： Mikio Takagi , Hajime Kamioka , Kazufumi Nakayama , Haruo Shimoda
IPC分类号： H01L21/00 , H01L21/033 , H01L21/225 , H01L23/485 , H01L29/00 , H01L21/265
CPC分类号： H01L23/485 , H01L21/00 , H01L21/033 , H01L21/2257 , H01L29/00 , H01L2924/0002 , H01L2924/3011 , Y10S148/111 , Y10S148/124 , Y10S148/141 , Y10S148/143 , Y10S148/145
摘要： A method of making a semiconductor device capable of high-speed operation is disclosed in which when the current gain-bandwidth is increased by the formation of a shallow base region. A side etching process is used to decrease the base spreading resistance and to allow ease in the formation of an emitter region of fine pattern. When the emitter region is formed by using polycrystalline silicon as a source of impurity diffusion, that area of an insulating film on a semiconductor substrate which adjoins the polycrystalline silicon is removed before the impurity diffusion so as to prevent an abnormal diffusion phenomenon.BACKGROUND OF THE INVENTION
摘要翻译：公开了一种制造能够高速运行的半导体器件的方法，其中当通过形成浅的基极区域增加电流增益带宽时。使用侧蚀刻工艺来降低基极扩散电阻并且容易形成精细图案的发射极区域。当通过使用多晶硅作为杂质扩散源形成发射极区域时，在杂质扩散之前去除邻接多晶硅的半导体衬底上的绝缘膜的面积，以防止异常扩散现象。

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