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    • 1. 发明授权
    • Display and manufacturing method thereof
    • 其显示和制造方法
    • US07462865B2
    • 2008-12-09
    • US11524477
    • 2006-09-20
    • Kwang-Chul JungJoon-Hoo ChoiJoon-Chul Goh
    • Kwang-Chul JungJoon-Hoo ChoiJoon-Chul Goh
    • H01L29/04
    • H01L29/41733H01L27/124
    • A display includes a substrate, a control electrode formed on the substrate, input and output electrodes formed on the substrate having facing sides facing each other with respect to the control electrode, a semiconductor layer contacting the input and the output electrodes, and an insulating layer formed between the control electrode and the semiconductor layer. At least one of the facing sides of the input and output electrodes on the semiconductor layer has a plurality of protrusions. The channel between the input and output electrodes is formed with various shapes, the length of the channel is prevented from being extending by a skew phenomenon, and the width of the channel may be extended.
    • 显示器包括基板,形成在基板上的控制电极,形成在基板上的输入和输出电极,其具有相对于控制电极相对的相对侧,接触输入端和输出电极的半导体层,以及绝缘层 形成在控制电极和半导体层之间。 半导体层上的输入和输出电极的至少一个面对侧具有多个突起。 输入电极和输出电极之间的通道形成各种形状,防止通道的长度由于偏斜现象而延伸,并且可以延长通道的宽度。
    • 8. 发明授权
    • Thin film transistor, thin film transistor panel, and method of manufacturing the same
    • 薄膜晶体管,薄膜晶体管面板及其制造方法
    • US07935578B2
    • 2011-05-03
    • US11375714
    • 2006-03-13
    • Joon-Hoo ChoiJoon-Chul GohBeohm-Rock Choi
    • Joon-Hoo ChoiJoon-Chul GohBeohm-Rock Choi
    • H01L21/00H01L21/84
    • H01L27/1296H01L29/04
    • The present invention relates to a TFT, a TFT array panel, and a method of manufacturing the TFT array panel. A method of manufacturing the TFT array panel includes the steps of forming a first electrode and a second electrode that are separated from each other on a substrate, forming a silicon layer including amorphous silicon and polycrystalline silicon on the substrate, forming a semiconductor by patterning the silicon layer, forming a gate insulating layer on the semiconductor, forming a third electrode that is opposite to the semiconductor on the gate insulating layer, forming a passivation layer on the third electrode, and forming a pixel electrode on the passivation layer. The TFT array panel has high mobility because the TFT include polycrystalline silicon at the channel region of the TFT.
    • 本发明涉及TFT,TFT阵列面板以及制造TFT阵列面板的方法。 制造TFT阵列面板的方法包括以下步骤:在衬底上形成彼此分离的第一电极和第二电极,在衬底上形成包括非晶硅和多晶硅的硅层,通过图案化形成半导体 在所述半导体上形成栅极绝缘层,形成与所述栅极绝缘层上的所述半导体相对的第三电极,在所述第三电极上形成钝化层,以及在所述钝化层上形成像素电极。 TFT阵列面板具有高迁移率,因为TFT在TFT的沟道区域包括多晶硅。