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    • 5. 发明授权
    • Thin film transistor, thin film transistor panel, and method of manufacturing the same
    • 薄膜晶体管,薄膜晶体管面板及其制造方法
    • US07935578B2
    • 2011-05-03
    • US11375714
    • 2006-03-13
    • Joon-Hoo ChoiJoon-Chul GohBeohm-Rock Choi
    • Joon-Hoo ChoiJoon-Chul GohBeohm-Rock Choi
    • H01L21/00H01L21/84
    • H01L27/1296H01L29/04
    • The present invention relates to a TFT, a TFT array panel, and a method of manufacturing the TFT array panel. A method of manufacturing the TFT array panel includes the steps of forming a first electrode and a second electrode that are separated from each other on a substrate, forming a silicon layer including amorphous silicon and polycrystalline silicon on the substrate, forming a semiconductor by patterning the silicon layer, forming a gate insulating layer on the semiconductor, forming a third electrode that is opposite to the semiconductor on the gate insulating layer, forming a passivation layer on the third electrode, and forming a pixel electrode on the passivation layer. The TFT array panel has high mobility because the TFT include polycrystalline silicon at the channel region of the TFT.
    • 本发明涉及TFT,TFT阵列面板以及制造TFT阵列面板的方法。 制造TFT阵列面板的方法包括以下步骤:在衬底上形成彼此分离的第一电极和第二电极,在衬底上形成包括非晶硅和多晶硅的硅层,通过图案化形成半导体 在所述半导体上形成栅极绝缘层,形成与所述栅极绝缘层上的所述半导体相对的第三电极,在所述第三电极上形成钝化层,以及在所述钝化层上形成像素电极。 TFT阵列面板具有高迁移率,因为TFT在TFT的沟道区域包括多晶硅。
    • 9. 发明申请
    • Thin film transistor, thin film transistor panel, and method of manufacturing the same
    • 薄膜晶体管,薄膜晶体管面板及其制造方法
    • US20060202204A1
    • 2006-09-14
    • US11375714
    • 2006-03-13
    • Joon-Hoo ChoiJoon-Chul GohBeohm-Rock Choi
    • Joon-Hoo ChoiJoon-Chul GohBeohm-Rock Choi
    • H01L29/04H01L21/84
    • H01L27/1296H01L29/04
    • The present invention relates to a TFT, a TFT array panel, and a method of manufacturing the TFT array panel. A method of manufacturing the TFT array panel includes the steps of forming a first electrode and a second electrode that are separated from each other on a substrate, forming a silicon layer including amorphous silicon and polycrystalline silicon on the substrate, forming a semiconductor by patterning the silicon layer, forming a gate insulating layer on the semiconductor, forming a third electrode that is opposite to the semiconductor on the gate insulating layer, forming a passivation layer on the third electrode, and forming a pixel electrode on the passivation layer. The TFT array panel has high mobility because the TFT include polycrystalline silicon at the channel region of the TFT.
    • 本发明涉及TFT,TFT阵列面板以及制造TFT阵列面板的方法。 制造TFT阵列面板的方法包括以下步骤:在衬底上形成彼此分离的第一电极和第二电极,在衬底上形成包括非晶硅和多晶硅的硅层,通过图案化形成半导体 在所述半导体上形成栅极绝缘层,形成与所述栅极绝缘层上的所述半导体相对的第三电极,在所述第三电极上形成钝化层,以及在所述钝化层上形成像素电极。 TFT阵列面板具有高迁移率,因为TFT在TFT的沟道区域包括多晶硅。