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    • 5. 发明授权
    • Organic electro luminescence display and method of fabricating the same
    • 有机电致发光显示器及其制造方法
    • US07663310B2
    • 2010-02-16
    • US10992769
    • 2004-11-22
    • Hun-Jung LeeJae-Bon KooSang-Il Park
    • Hun-Jung LeeJae-Bon KooSang-Il Park
    • H05B33/22
    • H01L27/3244H01L27/3258
    • An organic electro luminescence (EL) display with low light transmittance material removed from an emission region. The organic EL display comprises a substrate having the emission region and a TFT region. A TFT is formed on the substrate in the TFT region and includes an active layer having source/drain regions, a gate electrode formed on a gate insulating layer, and source/drain electrodes electrically coupled to the source/drain regions. A passivation layer is formed in the TFT region only and it includes a via hole exposing one of the source/drain electrodes. An organic EL element is formed in the emission region and is electrically coupled to one of the source/drain electrodes exposed through the via hole.
    • 从发射区域去除低透光性材料的有机电致发光(EL)显示器。 有机EL显示器包括具有发射区域的基板和TFT区域。 TFT在TFT区域的基板上形成,并且包括具有源极/漏极区域的有源层,形成在栅极绝缘层上的栅极电极和电耦合到源极/漏极区域的源极/漏极电极。 钝化层仅形成在TFT区域中,并且其包括暴露源极/漏极之一的通孔。 有机EL元件形成在发射区域中,并且电耦合到通过通孔暴露的源/漏电极之一。
    • 7. 发明授权
    • Flat panel display and method of fabricating the same
    • 平板显示器及其制造方法
    • US07740515B2
    • 2010-06-22
    • US11850928
    • 2007-09-06
    • Sang-Il ParkJae-Bon KooHun-Jung Lee
    • Sang-Il ParkJae-Bon KooHun-Jung Lee
    • H01J9/24
    • H01L27/3244H01L51/5284H01L2251/5346
    • A light-emitting display device the same includes an insulating substrate having a thin film transistor formed thereon. The thin film transistor includes a source electrode and/or a drain electrode. A passivation layer is formed on the insulating substrate over at least a portion of the thin film transistor, and has a via hole formed therein, which electrically contacts either the source electrode or the drain electrode. A pixel electrode is formed in the via hole. A light-blocking layer is formed over an entire upper surface of the passivation layer except for an area corresponding to the pixel electrode. A planarization layer is formed on an upper surface of the light-blocking layer except for an area corresponding to the pixel electrode.
    • 其发光显示装置包括其上形成有薄膜晶体管的绝缘基板。 薄膜晶体管包括源电极和/或漏电极。 钝化层在薄膜晶体管的至少一部分上形成在绝缘基板上,并且在其中形成有与孔电极或漏电极电接触的通孔。 像素电极形成在通孔中。 除了对应于像素电极的区域之外,在钝化层的整个上表面上形成遮光层。 除了与像素电极对应的区域之外,在遮光层的上表面上形成平坦化层。
    • 8. 发明授权
    • Flat panel display having light blocking layer
    • 具有遮光层的平板显示器
    • US07282855B2
    • 2007-10-16
    • US10901096
    • 2004-07-29
    • Sang-Il ParkJae-Bon KooHun-Jung Lee
    • Sang-Il ParkJae-Bon KooHun-Jung Lee
    • H01J1/62H01J63/04
    • H01L27/3244H01L51/5284H01L2251/5346
    • A light-emitting display device the same includes an insulating substrate having a thin film transistor formed thereon. The thin film transistor includes a source electrode and/or a drain electrode. A passivation layer is formed on the insulating substrate over at least a portion of the thin film transistor, and has a via hole formed therein, which electrically contacts either the source electrode or the drain electrode. A pixel electrode is formed in the via hole. A light-blocking layer is formed over an entire upper surface of the passivation layer except for an area corresponding to the pixel electrode. A planarization layer is formed on an upper surface of the light-blocking layer except for an area corresponding to the pixel electrode.
    • 其发光显示装置包括其上形成有薄膜晶体管的绝缘基板。 薄膜晶体管包括源电极和/或漏电极。 钝化层在薄膜晶体管的至少一部分上形成在绝缘基板上,并且在其中形成有与孔电极或漏电极电接触的通孔。 像素电极形成在通孔中。 除了对应于像素电极的区域之外,在钝化层的整个上表面上形成遮光层。 除了与像素电极对应的区域之外,在遮光层的上表面上形成平坦化层。
    • 10. 发明授权
    • Organic TFT, method of manufacturing the same and flat panel display device having the same
    • 有机TFT,其制造方法和具有该有机TFT的平板显示装置
    • US07928429B2
    • 2011-04-19
    • US11435849
    • 2006-05-18
    • Hun-Jung LeeMin-Chul SuhJae-Bon Koo
    • Hun-Jung LeeMin-Chul SuhJae-Bon Koo
    • H01L51/10
    • H01L51/105H01L27/3274H01L51/0021H01L51/0541
    • An organic thin film transistor (TFT), a method of making and a display including the organic TFT. In the TFT, the disconnection of a channel region does not occur because a step difference between a substrate and source and drain electrodes is lessened or eliminated by forming the source and drain electrodes in grooves in a buffer film. The method of manufacturing the organic TFT includes forming a buffer film on a substrate, forming concave units separated by a distance from each other in the buffer film by etching the buffer film, forming an electrode layer on the buffer film, forming source and drain electrodes within the concave units by etching the electrode layer using a photolithography process, forming a semiconductor layer on the source and drain electrodes and on the buffer film, forming a gate insulating film on the semiconductor layer and forming a gate electrode on the gate insulating film.
    • 有机薄膜晶体管(TFT),制造方法和包括有机TFT的显示器。 在TFT中,通过在缓冲膜中的沟槽中形成源电极和漏电极来减小或消除衬底与源电极和漏电极之间的阶差,不会发生沟道区的断开。 制造有机TFT的方法包括在基板上形成缓冲膜,通过蚀刻缓冲膜形成在缓冲膜中彼此隔开一定距离的凹形单元,在缓冲膜上形成电极层,形成源极和漏极 在凹面单元内通过使用光刻工艺蚀刻电极层,在源极和漏极以及缓冲膜上形成半导体层,在半导体层上形成栅极绝缘膜,并在栅极绝缘膜上形成栅电极。