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1. 发明授权

US08043887B2 Thin film transistor, flat panel display including the thin film transistor, and method for manufacturing the thin film transistor and the flat panel display 有权
标题翻译：薄膜晶体管，包括薄膜晶体管的平板显示器以及制造薄膜晶体管和平板显示器的方法
公开(公告)号：US08043887B2
公开(公告)日：2011-10-25
申请号：US12641277
申请日：2009-12-17
申请人： Nam-Choul Yang , Hye-Dong Kim , Min-Chul Suh , Jae-Bon Koo , Sang-Min Lee , Hun-Jung Lee
发明人： Nam-Choul Yang , Hye-Dong Kim , Min-Chul Suh , Jae-Bon Koo , Sang-Min Lee , Hun-Jung Lee
IPC分类号： H01L51/40
CPC分类号： H01L51/0015 , B82Y10/00 , B82Y30/00 , H01L51/0036 , H01L51/0052 , H01L51/0512
摘要： A thin film transistor having a transformed region that provides the same result as patterning a semiconductor layer, a flat panel display having the thin film transistor and a method for manufacturing the thin film transistor and the flat panel display are disclosed. The thin film structure includes a gate electrode, a source and a drain electrode, each insulated from the gate electrode and an organic semiconductor layer coupled to the source electrode and the drain electrode. The organic semiconductor layer includes the transformed region having a crystal structure distinguished from crystal structures of regions around the channel region.
摘要翻译：公开了具有提供与图案化半导体层相同结果的变换区域的薄膜晶体管，具有薄膜晶体管的平板显示器以及薄膜晶体管和平板显示器的制造方法。薄膜结构包括栅电极，源电极和漏电极，每个与栅电极绝缘，以及耦合到源电极和漏电极的有机半导体层。有机半导体层包括具有与通道区域周围的区域的晶体结构不同的晶体结构的变换区域。

2. 发明授权

US07855503B2 Flat panel display and method of manufacturing the same 有权
标题翻译：平板显示器及其制造方法
公开(公告)号：US07855503B2
公开(公告)日：2010-12-21
申请号：US11373802
申请日：2006-03-10
申请人： Min-Chul Suh , Hun-Jung Lee , Yeon-Gon Mo , Jae-Bon Koo
发明人： Min-Chul Suh , Hun-Jung Lee , Yeon-Gon Mo , Jae-Bon Koo
IPC分类号： H01L51/50
CPC分类号： H01L27/3248 , G02F1/136286 , G02F2001/136295 , G02F2201/50 , H01L27/3246 , H01L27/3262 , H01L27/3276 , H01L51/0004 , H01L51/0037 , H01L51/0038 , H01L51/0052 , H01L51/0059 , H01L51/0062 , H01L51/0078 , H01L51/0081 , H01L51/0541 , H01L51/0545
摘要： A flat panel display capable of preventing a pixel circuit from electrically short-circuiting, and a method of manufacturing the flat panel display are disclosed. In one embodiment, the flat panel display includes an insulating film having an aperture, a pixel electrode having a portion exposed by the aperture of the insulating film, a conductor formed on the insulating film, and a capping layer covering the conductor. According to embodiments of the present invention, the conductor is formed from a conductive paste and the rough surface of the conductive paste is passivated by a capping layer formed on the conductor, and thus, a short circuit between the conductor and an opposing pixel electrode can be prevented.
摘要翻译：公开了能够防止像素电路电气短路的平板显示器，以及制造平板显示器的方法。在一个实施例中，平板显示器包括具有孔的绝缘膜，具有由绝缘膜的孔露出的部分的像素电极，形成在绝缘膜上的导体和覆盖导体的覆盖层。根据本发明的实施例，导体由导电膏形成，并且导电浆料的粗糙表面被形成在导体上的覆盖层钝化，因此导体与相对的像素电极罐之间的短路被阻止

3. 发明申请

US20060270122A1 Organic TFT, method of manufacturing the same and flat panel display device having the same 有权
标题翻译：有机TFT，其制造方法和具有该有机TFT的平板显示装置
公开(公告)号：US20060270122A1
公开(公告)日：2006-11-30
申请号：US11435849
申请日：2006-05-18
申请人： Hun-Jung Lee , Min-Chul Suh , Jae-Bon Koo
发明人： Hun-Jung Lee , Min-Chul Suh , Jae-Bon Koo
IPC分类号： H01L21/84 , H01L21/00
CPC分类号： H01L51/105 , H01L27/3274 , H01L51/0021 , H01L51/0541
摘要： An organic thin film transistor (TFT), a method of making and a display including the organic TFT. In the TFT, the disconnection of a channel region does not occur because a step difference between a substrate and source and drain electrodes is lessened or eliminated by forming the source and drain electrodes in grooves in a buffer film. The method of manufacturing the organic TFT includes forming a buffer film on a substrate, forming concave units separated by a distance from each other in the buffer film by etching the buffer film, forming an electrode layer on the buffer film, forming source and drain electrodes within the concave units by etching the electrode layer using a photolithography process, forming a semiconductor layer on the source and drain electrodes and on the buffer film, forming a gate insulating film on the semiconductor layer and forming a gate electrode on the gate insulating film.
摘要翻译：有机薄膜晶体管（TFT），制造方法和包括有机TFT的显示器。在TFT中，通过在缓冲膜中的沟槽中形成源电极和漏电极来减小或消除衬底与源电极和漏电极之间的阶差，不会发生沟道区的断开。制造有机TFT的方法包括在基板上形成缓冲膜，通过蚀刻缓冲膜形成在缓冲膜中彼此隔开一定距离的凹形单元，在缓冲膜上形成电极层，形成源极和漏极在凹面单元内通过使用光刻工艺蚀刻电极层，在源极和漏极以及缓冲膜上形成半导体层，在半导体层上形成栅极绝缘膜，并在栅极绝缘膜上形成栅电极。

4. 发明申请

US20060138405A1 Thin film transistor, flat panel display including the thin film transistor, and method for manufacturing the thin film transistor and the flat panel display 审中-公开
标题翻译：薄膜晶体管，包括薄膜晶体管的平板显示器以及制造薄膜晶体管和平板显示器的方法
公开(公告)号：US20060138405A1
公开(公告)日：2006-06-29
申请号：US11298211
申请日：2005-12-09
申请人： Nam-Choul Yang , Hye-Dong Kim , Min-Chul Suh , Jae-Bon Koo , Sang-Min Lee , Hun-Jung Lee
发明人： Nam-Choul Yang , Hye-Dong Kim , Min-Chul Suh , Jae-Bon Koo , Sang-Min Lee , Hun-Jung Lee
IPC分类号： H01L29/08
CPC分类号： H01L51/0015 , B82Y10/00 , B82Y30/00 , H01L51/0036 , H01L51/0052 , H01L51/0512
摘要： A thin film transistor having a transformed region that provides the same result as patterning a semiconductor layer, a flat panel display having the thin film transistor and a method for manufacturing the thin film transistor and the flat panel display are disclosed. The thin film structure includes a gate electrode, a source and a drain electrode, each insulated from the gate electrode and an organic semiconductor layer coupled to the source electrode and the drain electrode. The organic semiconductor layer includes the transformed region having a crystal structure distinguished from crystal structures of regions around the channel region.
摘要翻译：公开了具有提供与图案化半导体层相同结果的变换区域的薄膜晶体管，具有薄膜晶体管的平板显示器以及薄膜晶体管和平板显示器的制造方法。薄膜结构包括栅电极，源电极和漏电极，每个与栅电极绝缘，以及耦合到源电极和漏电极的有机半导体层。有机半导体层包括具有与通道区域周围的区域的晶体结构不同的晶体结构的变换区域。

5. 发明申请

US20060091395A1 Organic electroluminescent display device having OTFT and method of fabricating the same 有权
标题翻译：具有OTFT的有机电致发光显示装置及其制造方法
公开(公告)号：US20060091395A1
公开(公告)日：2006-05-04
申请号：US11253198
申请日：2005-10-18
申请人： Hun-Jung Lee , Min-Chul Suh , Jae-Bon Koo
发明人： Hun-Jung Lee , Min-Chul Suh , Jae-Bon Koo
IPC分类号： H01L29/786
CPC分类号： H01L51/10 , H01L21/31604 , H01L21/31637 , H01L21/31691 , H01L28/40 , H01L51/0529 , H01L51/0545
摘要： An organic electroluminescent display device having an organic thin film transistor (OTFT) and a method of fabricating the same is disclosed. The display device can maintain an insulation property of a TFT and concurrently, ensure a sufficient capacitance by using an organic insulating layer for a gate insulating layer and using an inorganic insulating layer for a capacitor dielectric. In one embodiment, the organic electroluminescent display device includes a substrate having a capacitor region and a transistor region, a TFT formed in the transistor region of the substrate, and having a gate electrode, an organic semiconductor layer, a source electrode, and a drain electrode, a capacitor formed in the capacitor region of the substrate, and having a lower electrode and an upper electrode, and a display element connected to one of source/drain electrodes of the TFT. In one embodiment, a gate insulating layer formed below or on the gate electrode of the TFT includes at least an organic insulating layer, and a capacitor dielectric formed between the upper and lower electrodes of the capacitor includes an inorganic insulating layer.
摘要翻译：公开了具有有机薄膜晶体管（OTFT）的有机电致发光显示装置及其制造方法。显示装置可以保持TFT的绝缘性能，同时通过使用用于栅极绝缘层的有机绝缘层和使用用于电容器电介质的无机绝缘层来确保足够的电容。在一个实施例中，有机电致发光显示装置包括具有电容器区域和晶体管区域的基板，形成在基板的晶体管区域中的TFT，并且具有栅电极，有机半导体层，源电极和漏极电极，形成在基板的电容器区域中的电容器，并且具有下电极和上电极，以及连接到TFT的源极/漏极之一的显示元件。在一个实施例中，形成在TFT的栅极电极下面或栅极绝缘层上的至少一个有机绝缘层，形成在电容器的上部和下部电极之间的电容器电介质包括无机绝缘层。

6. 发明授权

US07928429B2 Organic TFT, method of manufacturing the same and flat panel display device having the same 有权
标题翻译：有机TFT，其制造方法和具有该有机TFT的平板显示装置
公开(公告)号：US07928429B2
公开(公告)日：2011-04-19
申请号：US11435849
申请日：2006-05-18
申请人： Hun-Jung Lee , Min-Chul Suh , Jae-Bon Koo
发明人： Hun-Jung Lee , Min-Chul Suh , Jae-Bon Koo
IPC分类号： H01L51/10
CPC分类号： H01L51/105 , H01L27/3274 , H01L51/0021 , H01L51/0541
摘要： An organic thin film transistor (TFT), a method of making and a display including the organic TFT. In the TFT, the disconnection of a channel region does not occur because a step difference between a substrate and source and drain electrodes is lessened or eliminated by forming the source and drain electrodes in grooves in a buffer film. The method of manufacturing the organic TFT includes forming a buffer film on a substrate, forming concave units separated by a distance from each other in the buffer film by etching the buffer film, forming an electrode layer on the buffer film, forming source and drain electrodes within the concave units by etching the electrode layer using a photolithography process, forming a semiconductor layer on the source and drain electrodes and on the buffer film, forming a gate insulating film on the semiconductor layer and forming a gate electrode on the gate insulating film.
摘要翻译：有机薄膜晶体管（TFT），制造方法和包括有机TFT的显示器。在TFT中，通过在缓冲膜中的沟槽中形成源电极和漏电极来减小或消除衬底与源电极和漏电极之间的阶差，不会发生沟道区的断开。制造有机TFT的方法包括在基板上形成缓冲膜，通过蚀刻缓冲膜形成在缓冲膜中彼此隔开一定距离的凹形单元，在缓冲膜上形成电极层，形成源极和漏极在凹面单元内通过使用光刻工艺蚀刻电极层，在源极和漏极以及缓冲膜上形成半导体层，在半导体层上形成栅极绝缘膜，并在栅极绝缘膜上形成栅电极。

7. 发明申请

US20100099215A1 THIN FILM TRANSISTOR, FLAT PANEL DISPLAY INCLUDING THE THIN FILM TRANSISTOR, AND METHOD FOR MANUFACTURING THE THIN FILM TRANSISTOR AND THE FLAT PANEL DISPLAY 有权
标题翻译：薄膜晶体管，包括薄膜晶体管的平面板显示器，以及制造薄膜晶体管和平板显示器的方法
公开(公告)号：US20100099215A1
公开(公告)日：2010-04-22
申请号：US12641277
申请日：2009-12-17
申请人： Nam-Choul Yang , Hye-Dong Kim , Min-Chul Suh , Jae-Bon Koo , Sang-Min Lee , Hun-Jung Lee
发明人： Nam-Choul Yang , Hye-Dong Kim , Min-Chul Suh , Jae-Bon Koo , Sang-Min Lee , Hun-Jung Lee
IPC分类号： H01L51/40 , H01L51/56
CPC分类号： H01L51/0015 , B82Y10/00 , B82Y30/00 , H01L51/0036 , H01L51/0052 , H01L51/0512
摘要： A thin film transistor having a transformed region that provides the same result as patterning a semiconductor layer, a flat panel display having the thin film transistor and a method for manufacturing the thin film transistor and the flat panel display are disclosed. The thin film structure includes a gate electrode, a source and a drain electrode, each insulated from the gate electrode and an organic semiconductor layer coupled to the source electrode and the drain electrode. The organic semiconductor layer includes the transformed region having a crystal structure distinguished from crystal structures of regions around the channel region.
摘要翻译：公开了具有提供与图案化半导体层相同结果的变换区域的薄膜晶体管，具有薄膜晶体管的平板显示器以及薄膜晶体管和平板显示器的制造方法。薄膜结构包括栅电极，源电极和漏电极，每个与栅电极绝缘，以及耦合到源电极和漏电极的有机半导体层。有机半导体层包括具有与通道区域周围的区域的晶体结构不同的晶体结构的变换区域。

8. 发明授权

US07655943B2 Organic electroluminescent display device having OTFT and method of fabricating the same 有权
标题翻译：具有OTFT的有机电致发光显示装置及其制造方法
公开(公告)号：US07655943B2
公开(公告)日：2010-02-02
申请号：US11253198
申请日：2005-10-18
申请人： Hun-Jung Lee , Min-Chul Suh , Jae-Bon Koo
发明人： Hun-Jung Lee , Min-Chul Suh , Jae-Bon Koo
IPC分类号： H01L29/08
CPC分类号： H01L51/10 , H01L21/31604 , H01L21/31637 , H01L21/31691 , H01L28/40 , H01L51/0529 , H01L51/0545
摘要： An organic electroluminescent display device having an organic thin film transistor (OTFT) and a method of fabricating the same is disclosed. The display device can maintain an insulation property of a TFT and concurrently, ensure a sufficient capacitance by using an organic insulating layer for a gate insulating layer and using an inorganic insulating layer for a capacitor dielectric. In one embodiment, the organic electroluminescent display device includes a substrate having a capacitor region and a transistor region, a TFT formed in the transistor region of the substrate, and having a gate electrode, an organic semiconductor layer, a source electrode, and a drain electrode, a capacitor formed in the capacitor region of the substrate, and having a lower electrode and an upper electrode, and a display element connected to one of source/drain electrodes of the TFT. In one embodiment, a gate insulating layer formed below or on the gate electrode of the TFT includes at least an organic insulating layer, and a capacitor dielectric formed between the upper and lower electrodes of the capacitor includes an inorganic insulating layer.
摘要翻译：公开了具有有机薄膜晶体管（OTFT）的有机电致发光显示装置及其制造方法。显示装置可以保持TFT的绝缘性能，同时通过使用用于栅极绝缘层的有机绝缘层和使用用于电容器电介质的无机绝缘层来确保足够的电容。在一个实施例中，有机电致发光显示装置包括具有电容器区域和晶体管区域的基板，形成在基板的晶体管区域中的TFT，并且具有栅电极，有机半导体层，源电极和漏极电极，形成在基板的电容器区域中的电容器，并且具有下电极和上电极，以及连接到TFT的源极/漏极之一的显示元件。在一个实施例中，形成在TFT的栅极电极下面或栅极绝缘层上的至少一个有机绝缘层，形成在电容器的上部和下部电极之间的电容器电介质包括无机绝缘层。

9. 发明申请

US20060220542A1 Flat panel display and method of manufacturing the same 有权
标题翻译：平板显示器及其制造方法
公开(公告)号：US20060220542A1
公开(公告)日：2006-10-05
申请号：US11373802
申请日：2006-03-10
申请人： Min-Chul Suh , Hun-Jung Lee , Yeon-Gon Mo , Jae-Bon Koo
发明人： Min-Chul Suh , Hun-Jung Lee , Yeon-Gon Mo , Jae-Bon Koo
IPC分类号： H01J1/62 , H01J63/04
CPC分类号： H01L27/3248 , G02F1/136286 , G02F2001/136295 , G02F2201/50 , H01L27/3246 , H01L27/3262 , H01L27/3276 , H01L51/0004 , H01L51/0037 , H01L51/0038 , H01L51/0052 , H01L51/0059 , H01L51/0062 , H01L51/0078 , H01L51/0081 , H01L51/0541 , H01L51/0545
摘要： A flat panel display capable of preventing a pixel circuit from electrically short-circuiting, and a method of manufacturing the flat panel display are disclosed. In one embodiment, the flat panel display includes an insulating film having an aperture, a pixel electrode having a portion exposed by the aperture of the insulating film, a conductor formed on the insulating film, and a capping layer covering the conductor. According to embodiments of the present invention, the conductor is formed from a conductive paste and the rough surface of the conductive paste is passivated by a capping layer formed on the conductor, and thus, a short circuit between the conductor and an opposing pixel electrode can be prevented.
摘要翻译：公开了能够防止像素电路电气短路的平板显示器，以及制造平板显示器的方法。在一个实施例中，平板显示器包括具有孔的绝缘膜，具有由绝缘膜的孔露出的部分的像素电极，形成在绝缘膜上的导体和覆盖导体的覆盖层。根据本发明的实施例，导体由导电膏形成，并且导电浆料的粗糙表面被形成在导体上的覆盖层钝化，因此导体与相对的像素电极罐之间的短路被阻止

10. 发明授权

US07714321B2 Organic thin film transistor, flat display device including the same, and method of manufacturing the organic thin film transistor 有权
标题翻译：有机薄膜晶体管，包括该薄膜晶体管的平面显示装置以及有机薄膜晶体管的制造方法
公开(公告)号：US07714321B2
公开(公告)日：2010-05-11
申请号：US11378011
申请日：2006-03-17
申请人： Sung-Jin Kim , Jae-Bon Koo , Min-Chul Suh
发明人： Sung-Jin Kim , Jae-Bon Koo , Min-Chul Suh
IPC分类号： H01L35/24 , H01L51/00
CPC分类号： H01L51/0003 , H01L51/0545
摘要： An organic thin film transistor, a flat display device including the same, and a method of manufacturing the organic thin film transistor are disclosed. In one embodiment, the organic thin film transistor includes: i) a substrate, ii) a gate electrode disposed on the substrate, iii) a gate insulation film disposed on the gate electrode, iv) a source electrode and a drain electrode spaced from each other and disposed on the gate insulation film, v) an organic semiconductor layer contacting the source electrode and the drain electrode and having an edge to be distinguished from an adjacent organic thin film transistor, and vi) a cantilever layer disposed to cover the organic semiconductor layer, contacting a portion of a layer which is disposed in or under the organic semiconductor layer, and is exposed to the outside of the edge of the organic semiconductor layer. According to one embodiment, a patterning effect of an organic semiconductor layer is easily obtained and characteristics such as an on/off ratio are improved.
摘要翻译：公开了一种有机薄膜晶体管，包括该有机薄膜晶体管的平面显示装置和制造该有机薄膜晶体管的方法。在一个实施例中，有机薄膜晶体管包括：i）衬底，ii）设置在衬底上的栅电极，iii）设置在栅电极上的栅极绝缘膜，iv）与每个间隔开的源电极和漏电极 v）与源电极和漏极接触的有机半导体层，并且具有与相邻的有机薄膜晶体管不同的边缘，以及vi）设置成覆盖有机半导体的悬臂层接触设置在有机半导体层中或其下方的层的一部分，并且暴露于有机半导体层的边缘的外侧。根据一个实施例，容易获得有机半导体层的图案化效果，并且提高诸如开/关比的特性。

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