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1. 发明申请

US20050260924A1 Pad break-in method for chemical mechanical polishing tool which polishes with ceria-based slurry 有权
标题翻译：用二氧化铈浆料抛光的化学机械抛光工具的垫片插入方法
公开(公告)号：US20050260924A1
公开(公告)日：2005-11-24
申请号：US10851549
申请日：2004-05-21
申请人： Kuo-Chun Wu , Wee-chen Gan , Karen Wong
发明人： Kuo-Chun Wu , Wee-chen Gan , Karen Wong
IPC分类号： B24B37/04 , B24B53/007 , B24B49/00
CPC分类号： B24B53/017 , B24B37/042
摘要： A chemical mechanical polishing (CMP) method is disclosed in which a new polishing pad is broken-in and conditioned into a steady operating state while using a silica (SiO2) based CMP slurry and where the broken-in and conditioned pad is afterwards used for polishing patterned workpieces (e.g., semiconductor wafers) with a ceria (CeO2) based CMP slurry. The approach shortens break-in time and appears to eliminate a first wafer effect usually seen following break-in with ceria-based CMP slurries.
摘要翻译：公开了一种化学机械抛光（CMP）方法，其中在使用基于二氧化硅（SiO 2/2））的CMP浆料的同时，将新的抛光垫破碎并调节至稳定的运行状态，然后将调节垫用于用基于二氧化铈（CeO 2 N 2）的CMP浆料抛光图案化工件（例如，半导体晶片）。该方法缩短了插入时间，并且似乎消除了通过二氧化铈基CMP浆料破裂后通常看到的第一晶片效应。

2. 发明申请

US20050260922A1 Torque-based end point detection methods for chemical mechanical polishing tool which uses ceria-based CMP slurry to polish to protective pad layer 有权
标题翻译：用于化学机械抛光工具的基于扭矩的终点检测方法，其使用二氧化铈基CMP浆料抛光至保护垫层
公开(公告)号：US20050260922A1
公开(公告)日：2005-11-24
申请号：US10851378
申请日：2004-05-21
申请人： Wee-chen Gan , Karen Wong , Kuo-Chun Wu
发明人： Wee-chen Gan , Karen Wong , Kuo-Chun Wu
IPC分类号： B24B37/04 , B24B49/00 , B24B49/16
CPC分类号： B24B37/013 , B24B49/16
摘要： A chemical mechanical polishing (CMP) method is disclosed in which a torque-based end-point algorithm is used to determine when polishing should be stopped. The end-point algorithm is applicable to situations where a ceria (CeO2) based CMP slurry is used for further polishing, pre-patterned and pre-polished workpieces (e.g., semiconductor wafers) which have a high friction over-layer (e.g., HDP-oxide) and a comparatively, lower friction and underlying layer of sacrificial pads (e.g., silicon nitride pads). A mass production wise, reliable and consistent signature point in the friction versus time waveform of a torque-representing signal is found and used to trigger an empirically specified duration of overpolish. A database may be used to define the overpolish time as a function of one or more relevant parameters.
摘要翻译：公开了一种化学机械抛光（CMP）方法，其中使用基于扭矩的端点算法来确定何时停止抛光。端点算法适用于将基于二氧化铈（CeO 2/2）的CMP浆料用于进一步抛光，预图案化和预抛光工件（例如，半导体晶片）的情况，其具有高的摩擦过度层（例如，HDP氧化物）和相对较低的摩擦和下层的牺牲垫（例如，氮化硅垫）。发现在扭矩表示信号的摩擦时间波形中的大规模生产明智，可靠和一致的签名点，并用于触发经验规定的过度推测的持续时间。可以使用数据库来定义作为一个或多个相关参数的函数的过时时间。

3. 发明授权

US07070484B2 Pad break-in method for chemical mechanical polishing tool which polishes with ceria-based slurry 有权
标题翻译：用二氧化铈浆料抛光的化学机械抛光工具的垫片插入方法
公开(公告)号：US07070484B2
公开(公告)日：2006-07-04
申请号：US10851549
申请日：2004-05-21
申请人： Kuo-Chun Wu , Wee-chen Richard Gan , Karen Wong
发明人： Kuo-Chun Wu , Wee-chen Richard Gan , Karen Wong
IPC分类号： B24B1/00
CPC分类号： B24B53/017 , B24B37/042
摘要： A chemical mechanical polishing (CMP) method is disclosed in which a new polishing pad is broken-in and conditioned into a steady operating state while using a silica (SiO2) based CMP slurry and where the broken-in and conditioned pad is afterwards used for polishing patterned workpieces (e.g., semiconductor wafers) with a ceria (CeO2) based CMP slurry. The approach shortens break-in time and appears to eliminate a first wafer effect usually seen following break-in with ceria-based CMP slurries.
摘要翻译：公开了一种化学机械抛光（CMP）方法，其中在使用基于二氧化硅（SiO 2/2））的CMP浆料的同时，将新的抛光垫破碎并调节至稳定的运行状态，然后将调节垫用于用基于二氧化铈（CeO 2 N 2）的CMP浆料抛光图案化工件（例如，半导体晶片）。该方法缩短了插入时间，并且似乎消除了通过二氧化铈基CMP浆料破裂后通常看到的第一晶片效应。

4. 发明授权

US07040958B2 Torque-based end point detection methods for chemical mechanical polishing tool which uses ceria-based CMP slurry to polish to protective pad layer 有权
标题翻译：用于化学机械抛光工具的基于扭矩的终点检测方法，其使用二氧化铈基CMP浆料抛光至保护垫层
公开(公告)号：US07040958B2
公开(公告)日：2006-05-09
申请号：US10851378
申请日：2004-05-21
申请人： Wee-chen Richard Gan , Karen Wong , Kuo-Chun Wu
发明人： Wee-chen Richard Gan , Karen Wong , Kuo-Chun Wu
IPC分类号： B24B49/00
CPC分类号： B24B37/013 , B24B49/16
摘要： A chemical mechanical polishing (CMP) method is disclosed in which a torque-based end-point algorithm is used to determine when polishing should be stopped. The end-point algorithm is applicable to situations where a ceria (CeO2) based CMP slurry is used for further polishing, pre-patterned and pre-polished workpieces (e.g., semiconductor wafers) which have a high friction over-layer (e.g., HDP-oxide) and a comparatively, lower friction and underlying layer of sacrificial pads (e.g., silicon nitride pads). A mass production wise, reliable and consistent signature point in the friction versus time waveform of a torque-representing signal is found and used to trigger an empirically specified duration of overpolish. A database may be used to define the overpolish time as a function of one or more relevant parameters.
摘要翻译：公开了一种化学机械抛光（CMP）方法，其中使用基于扭矩的端点算法来确定何时停止抛光。端点算法适用于将基于二氧化铈（CeO 2/2）的CMP浆料用于进一步抛光，预图案化和预抛光工件（例如，半导体晶片）的情况，其具有高的摩擦过度层（例如，HDP氧化物）和相对较低的摩擦和下层的牺牲垫（例如，氮化硅垫）。发现在扭矩表示信号的摩擦时间波形中的大规模生产明智，可靠和一致的签名点，并用于触发经验规定的过度推测的持续时间。可以使用数据库来定义作为一个或多个相关参数的函数的过时时间。

5. 发明授权

US06997788B2 Multi-tool, multi-slurry chemical mechanical polishing 失效
标题翻译：多工具，多浆料化学机械抛光
公开(公告)号：US06997788B2
公开(公告)日：2006-02-14
申请号：US10677785
申请日：2003-10-01
申请人： Kuo-Chun Wu , Richard Gan , Karen Wong
发明人： Kuo-Chun Wu , Richard Gan , Karen Wong
IPC分类号： B24B1/00
CPC分类号： B24B37/042
摘要： A chemical mechanical polishing method is disclosed in which a batch of wafers is first supplied to a low-selectivity, first CMP tool for partly polishing the batch with one or more relatively non-selective CMP slurries (e.g., silica (SiO2) based); and in which the batch of partly-polished wafers is subsequently transferred to a higher-selectivity, second CMP tool which uses one or more comparatively more-selective CMP slurries (e.g., ceria (CeO2) based) to further the polishing of the batch of partly-polished wafers and/or to complete the polishing of the partly-polished wafers.
摘要翻译：公开了一种化学机械抛光方法，其中首先将一批晶片供应到低选择性的第一CMP工具，以用一种或多种相对非选择性CMP浆料部分抛光批料（例如，二氧化硅（SiO 2）））并且其中批次的部分抛光的晶片随后转移到使用一种或多种相对较多选择性CMP浆料（例如，基于二氧化铈（CeO 2 2））的更高选择性的第二CMP工具，以进一步抛光批次的部分抛光的晶片和/或完成部分抛光的晶片的抛光。

6. 发明申请

US20050075056A1 Multi-tool, multi-slurry chemical mechanical polishing 失效
标题翻译：多工具，多浆料化学机械抛光
公开(公告)号：US20050075056A1
公开(公告)日：2005-04-07
申请号：US10677785
申请日：2003-10-01
申请人： Kuo-Chun Wu , Richard Gan , Karen Wong
发明人： Kuo-Chun Wu , Richard Gan , Karen Wong
IPC分类号： B24B37/04 , B24B1/00
CPC分类号： B24B37/042
摘要： A chemical mechanical polishing method is disclosed in which a batch of wafers is first supplied to a low-selectivity, first CMP tool for partly polishing the batch with one or more relatively non-selective CMP slurries (e.g., silica (SiO2) based); and in which the batch of partly-polished wafers is subsequently transferred to a higher-selectivity, second CMP tool which uses one or more comparatively more-selective CMP slurries (e.g., ceria (CeO2) based) to further the polishing of the batch of partly-polished wafers and/or to complete the polishing of the partly-polished wafers.
摘要翻译：公开了一种化学机械抛光方法，其中首先将一批晶片供应到低选择性的第一CMP工具，以用一种或多种相对非选择性CMP浆料（例如基于二氧化硅（SiO 2））部分抛光批料; 并且其中一批部分抛光的晶片随后转移到使用一种或多种相对较多选择性CMP浆料（例如，基于二氧化铈（CeO 2））的更高选择性的第二CMP工具，以进一步抛光该批次部分抛光的晶片和/或完成部分抛光的晶片的抛光。

7. 发明申请

US20070112832A1 Smart copy/paste of graphical nodes 有权
标题翻译：智能复制/粘贴图形节点
公开(公告)号：US20070112832A1
公开(公告)日：2007-05-17
申请号：US11281076
申请日：2005-11-17
申请人： Karen Wong , Andrew Howe , Brent Gilbert , Crystal Hoyer , Matthew Kotler , Mikko Mannisto
发明人： Karen Wong , Andrew Howe , Brent Gilbert , Crystal Hoyer , Matthew Kotler , Mikko Mannisto
IPC分类号： G06F7/00
CPC分类号： G06F3/0481 , G06F17/2241
摘要： When using graphical diagrams, cutting and pasting operations may take advantage of predefined relationships to intelligently insert and remove items from the diagram. A text data model may be interpreted sequentially or hierarchically to construct various diagrams. Pasting operations will bring new data into the diagram and data model while conforming the new data to the diagram definition. Cutting operations may cause the data model and diagram to be healed to conform to the diagram definition.
摘要翻译：当使用图形图表时，切割和粘贴操作可以利用预定义的关系来智能地从图中插入和移除项目。可以顺序地或分层地解释文本数据模型以构建各种图。粘贴操作会将新数据带入图表和数据模型，同时将新数据符合图表定义。切割操作可能导致数据模型和图形被修复以符合图定义。

8. 发明申请

US20060212801A1 Method and computer-readable medium for fitting text to shapes within a graphic 有权
标题翻译：用于将文本拟合到图形内的形状的方法和计算机可读介质
公开(公告)号：US20060212801A1
公开(公告)日：2006-09-21
申请号：US11081324
申请日：2005-03-15
申请人： Ilan Berker , Jason Costa , Keywon Chung , Matthew Kotler , Janet Schorr , Scott Sherman , Karen Wong
发明人： Ilan Berker , Jason Costa , Keywon Chung , Matthew Kotler , Janet Schorr , Scott Sherman , Karen Wong
IPC分类号： G06F17/24 , G06F17/21
CPC分类号： G06F17/211
摘要： A method and computer-readable medium are provided for fitting text to shapes within a graphic. According to the method, initial constraints are defined that comprise initial values describing how a shape and text within the shape should be laid out. Constraint rules are also defined for use in modifying the initial constraints when application of the initial constraints to the text in a shape results in the text overflowing the boundaries of the shape. A change may be detected to the graphic that would affect the size or position of one or more of the shapes or the text within one of the shapes. If such a change causes text to overflow when laid out using the initial constraints, the constraint rules are applied sequentially to modify the constraints. The modified constraints are then reapplied to the shapes to create a new layout for the graphic.
摘要翻译：提供了一种方法和计算机可读介质，用于将文本拟合到图形内的形状。根据该方法，定义初始约束，其包括描述如何布置形状内的形状和文本的初始值。约束规则也被定义为用于修改初始约束时，将初始约束应用于形状中的文本导致文本溢出形状的边界。可能会检测到影响图形中的一种或多种形状或其中一种形状内的文本的大小或位置的变化。如果这样的变化导致文本在使用初始约束布局时溢出，则约束规则被顺序应用以修改约束。然后将修改的约束重新应用于形状以创建图形的新布局。

9. 发明申请

US20060209084A1 System and method for providing 1D and 2D connectors in a connected diagram 有权
标题翻译：在连接图中提供1D和2D连接器的系统和方法
公开(公告)号：US20060209084A1
公开(公告)日：2006-09-21
申请号：US11081211
申请日：2005-03-15
申请人： Karen Wong , David Gerton , Ilan Berker , Ramona Pousti , Matthew Kotler
发明人： Karen Wong , David Gerton , Ilan Berker , Ramona Pousti , Matthew Kotler
IPC分类号： G09G5/00
CPC分类号： G06T11/206
摘要： System and methods for providing 1D and 2D connectors in a connected diagram. Routing and layout of connectors is accomplished through a pre-defined set of behaviors and properties on a connector that enable an aesthetic layout. Routing behaviors and visual look of the connectors within a diagram may be included in an XML definition file or controlled by a user. The user may switch between 1D and 2D connectors regardless of a shape of the connector. Padding and offset features are assigned to connectors for aesthetically pleasing presentation of object relations. Text box shapes and placements on or near connectors are aligned with connector type, size, and placement. Images and non-predefined shapes may be used as connectors with behaviors assigned similar to predefined shapes.
摘要翻译：在连接图中提供1D和2D连接器的系统和方法。连接器的路由和布局是通过连接器上的预定义的行为和属性来实现的，从而能够实现美观的布局。图中连接器的路由行为和视觉外观可能会包含在XML定义文件中或由用户控制。无论连接器的形状如何，用户都可以在1D和2D连接器之间切换。填充和偏移特征被分配给连接器，用于美观地呈现对象关系。连接器上或附近的文本框形状和布置与连接器类型，尺寸和位置对齐。可以将图像和非预定义形状用作具有类似于预定义形状的行为的连接器。

10. 发明申请

US20070208776A1 Assignment of metadata 审中-公开
标题翻译：元数据分配
公开(公告)号：US20070208776A1
公开(公告)日：2007-09-06
申请号：US11368969
申请日：2006-03-06
申请人： Benjamin Perry , David Parlin , Eric Wright , Jae Park , Karen Wong , Scott Dart
发明人： Benjamin Perry , David Parlin , Eric Wright , Jae Park , Karen Wong , Scott Dart
IPC分类号： G06F7/00
CPC分类号： G06F16/58
摘要： A system, a user interface and computer-readable media for associating metadata with digital media. Tags are associated with single-action user inputs. Entry of one of the single-action user inputs is detected. The tag associated with the detected input is stored as metadata associated with a selected item of digital media.
摘要翻译：用于将元数据与数字媒体相关联的系统，用户界面和计算机可读介质。标签与单动作用户输入相关联。检测单动作用户输入之一的输入。与检测到的输入相关联的标签被存储为与所选择的数字媒体项相关联的元数据。

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