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1. 发明授权

US06373369B2 High efficiency thin film inductor 有权
标题翻译：高效薄膜电感
公开(公告)号：US06373369B2
公开(公告)日：2002-04-16
申请号：US09839927
申请日：2001-04-23
申请人： Kuo-Ching Huang , Jin-Yuan Lee , Tse-Liang Ying
发明人： Kuo-Ching Huang , Jin-Yuan Lee , Tse-Liang Ying
IPC分类号： H01F500
CPC分类号： H01F5/003
摘要： An improved thin film inductor design is described. A spiral geometry is used to which has been added a core of high permeability material located at the center of the spiral. If the high permeability material is a conductor, care must be taken to avoid any contact between the core and the spiral. If a dielectric ferromagnetic material is used, this constraint is removed from the design. Several other embodiments are shown in which, in addition to the high permeability core, provide low reluctance paths for the structure. In one case this takes the form of a frame of ferromagnetic material surrounding the spiral while in a second case it has the form of a hollow square located directly above the spiral.
摘要翻译：描述了改进的薄膜电感器设计。使用螺旋几何形状，其中已经添加了位于螺旋中心的高磁导率材料的核心。如果高导磁率材料是导体，则必须注意避免芯和螺旋之间的任何接触。如果使用介电铁磁材料，则从设计中去除该约束。示出了其中除了高磁导率芯之外还提供用于结构的低磁阻路径的其它实施例。在一种情况下，这采取围绕螺旋的铁磁材料框架的形式，而在第二种情况下，其具有直接位于螺旋上方的中空正方形的形式。

2. 发明授权

US06433665B1 High efficiency thin film inductor 有权
公开(公告)号：US06433665B1
公开(公告)日：2002-08-13
申请号：US09839702
申请日：2001-04-23
申请人： Kuo-Ching Huang , Jin Yuan Lee , Tse-Liang Ying
发明人： Kuo-Ching Huang , Jin Yuan Lee , Tse-Liang Ying
IPC分类号： H01F500
摘要： An improved thin film inductor design is described. A spiral geometry is used to which has been added a core of high permeability material located at the center of the spiral. If the high permeability material is a conductor, care must be taken to avoid any contact between the core and the spiral. If a dielectric ferromagnetic material is used, this constraint is removed from the design. Several other embodiments are shown in which, in addition to the high permeability core, provide low reluctance paths for the structure. In one case this takes the form of a frame of ferromagnetic material surrounding the spiral while in a second case it has the form of a hollow square located directly above the spiral.

3. 发明授权

US06278352B1 High efficiency thin film inductor 有权
标题翻译：高效薄膜电感
公开(公告)号：US06278352B1
公开(公告)日：2001-08-21
申请号：US09359892
申请日：1999-07-26
申请人： Kuo-Ching Huang , Jin-Yuan Lee , Tse-Liang Ying
发明人： Kuo-Ching Huang , Jin-Yuan Lee , Tse-Liang Ying
IPC分类号： H01F500
CPC分类号： H01F5/003
摘要： An improved thin film inductor design is described. A spiral geometry is used to which has been added a core of high permeability material located at the center of the spiral. If the high permeability material is a conductor, care must be taken to avoid any contact between the core and the spiral. If a dielectric ferromagnetic material is used, this constraint is removed from the design. Several other embodiments are shown in which, in addition to the high permeability core, provide low reluctance paths for the structure. In one case this takes the form of a frame of ferromagnetic material surrounding the spiral while in a second case it has the form of a hollow square located directly above the spiral.
摘要翻译：描述了改进的薄膜电感器设计。使用螺旋几何形状，其中已经添加了位于螺旋中心的高磁导率材料的核心。如果高导磁率材料是导体，则必须注意避免芯和螺旋之间的任何接触。如果使用介电铁磁材料，则从设计中去除该约束。示出了其中除了高磁导率芯之外还提供用于结构的低磁阻路径的其它实施例。在一种情况下，这采取围绕螺旋的铁磁材料框架的形式，而在第二种情况下，其具有直接位于螺旋上方的中空正方形的形式。

4. 发明授权

US06174802B1 Method for fabricating a self aligned contact which eliminates the key hole problem using a two step contact deposition 有权
标题翻译：用于制造自对准接触的方法，其消除使用两步接触沉积的键孔问题
公开(公告)号：US06174802B1
公开(公告)日：2001-01-16
申请号：US09342042
申请日：1999-06-28
申请人： Kuo-Ching Huang , Tse-Liang Ying , Wen-Chuan Chiang , Min-Hsiung Chiang
发明人： Kuo-Ching Huang , Tse-Liang Ying , Wen-Chuan Chiang , Min-Hsiung Chiang
IPC分类号： H01L214763
CPC分类号： H01L21/76897
摘要： A method for forming a self aligned contact without key holes using a two step contact deposition. The process begins by providing a semiconductor structure having conductive structures (such as bit lines) thereover with sidewalls and having a contact area adjacent to the conductive structures. The conductive structures comprise at least one conductive layer with a hard mask thereover. A spacer layer is formed over the hard mask and the substrate structure and anisotropically etched to form sidewall spacers on the sidewalls of the conductive structure. A second dielectric (IPO) layer is formed over the sidewall spacers, the hard mask, and the substrate structure, whereby the second dielectric layer has a keyhole. A contact opening is formed in the second dielectric layer over the contact area. A first contact layer having poor step coverage is formed in the contact openings and over the second dielectric layer, thereby plugging the keyhole without filling it. A second contact layer is formed over the first contact layer.
摘要翻译：使用两步接触沉积形成无键孔的自对准接触的方法。该过程开始于提供具有导电结构（例如位线）的半导体结构，其具有侧壁并且具有与导电结构相邻的接触区域。导电结构包括至少一个具有硬掩模的导电层。在硬掩模和衬底结构之上形成间隔层，并且各向异性蚀刻以在导电结构的侧壁上形成侧壁间隔物。在侧壁间隔物，硬掩模和基板结构上方形成第二电介质层（IPO），由此第二介电层具有锁孔。在接触区域上的第二电介质层中形成接触开口。在接触开口和第二电介质层上形成具有差的台阶覆盖率的第一接触层，从而在不填充锁孔的情况下封闭钥匙孔。在第一接触层上形成第二接触层。

5. 发明授权

US06214715B1 Method for fabricating a self aligned contact which eliminates the key hole problem using a two step spacer deposition 有权
标题翻译：用于制造自对准接触的方法，其消除使用两步间隔物沉积的键孔问题
公开(公告)号：US06214715B1
公开(公告)日：2001-04-10
申请号：US09349841
申请日：1999-07-08
申请人： Kuo-Ching Huang , Tse-Liang Ying , Wen-Chuan Chiang
发明人： Kuo-Ching Huang , Tse-Liang Ying , Wen-Chuan Chiang
IPC分类号： H01L2144
CPC分类号： H01L27/10855 , H01L21/76897 , H01L27/10885 , H01L28/91 , H01L28/92
摘要： This invention provides a method for forming a self aligned contact without key holes using a two step sidewall spacer deposition. The process begins by providing a semiconductor structure having a device layer, a first inter poly oxide layer (IPO-1), and a conductive structure (such as a bit line) thereover, and having a contact area on the device layer adjacent to the conductive structure. The semiconductor structure can further include an optional etch stop layer overlying the first inter poly oxide layer. The conductive structure comprises at least one conductive layer with a hard mask thereover. A first spacer layer is formed over the hard mask and the IPO-1 layer and anisotropically etched to form first sidewall spacers on the sidewalls of the conductive structure up to a level above the bottom of the hard mask and below the level of the top of the hard mask such that the profile of the first sidewall spacers are not concave at any point. A second spacer layer is formed over the first sidewall spacers and anisotropically etched to form second sidewall spacers, having a profile that is not concave at any point. A second inter poly oxide layer is formed over the second sidewall spacers, the hard mask, and the IPO-1 layer, whereby the second inter poly oxide layer is free from key holes. A contact opening is formed in the second inter poly oxide layer and the first inter poly oxide layer over the contact area. A contact plug is formed in the contact openings.
摘要翻译：本发明提供一种用于使用两步侧壁间隔物沉积形成无键孔的自对准接触的方法。该过程开始于提供具有器件层，第一多晶硅氧化物层（IPO-1）和导电结构（例如位线）的半导体结构，并且在与其相邻的器件层上具有接触区域导电结构。半导体结构还可以包括覆盖在第一多晶硅氧化物层上的任选的蚀刻停止层。导电结构包括至少一个具有硬掩模的导电层。在硬掩模和IPO-1层上形成第一间隔层，并且各向异性蚀刻以在导电结构的侧壁上形成直到硬掩模的底部以上的水平并且低于硬掩模，使得第一侧壁隔片的轮廓在任何点都不是凹的。第二间隔层形成在第一侧壁间隔物上并且各向异性蚀刻以形成第二侧壁间隔物，其具有在任何点处不凹的轮廓。在第二侧壁间隔物，硬掩模和IPO-1层上形成第二多晶硅氧化物层，由此第二多晶氧化物层没有键孔。在接触区域上的第二多晶氧化物层和第一多晶氧化物层中形成接触开口。在接触开口中形成接触塞。

6. 发明授权

US06194234B1 Method to evaluate hemisperical grain (HSG) polysilicon surface 有权
标题翻译：评估半晶粒（HSG）多晶硅表面的方法
公开(公告)号：US06194234B1
公开(公告)日：2001-02-27
申请号：US09324925
申请日：1999-06-04
申请人： Kuo-Ching Huang , Tse-Liang Ying , Wen-Chuan Chiang , Yu-Hua Lee
发明人： Kuo-Ching Huang , Tse-Liang Ying , Wen-Chuan Chiang , Yu-Hua Lee
IPC分类号： G01R3126
CPC分类号： H01L22/12
摘要： A new method based on measuring the weight of a wafer (on which the layer of HSG has been deposited) before (W1) and after (W2) the surface of the HSG layer is coated with a layer of either photoresist or SOG. The difference delta W=W2−W1 provides an indicator of the roughness or smoothness of the surface of the deposited layer of HSG. This new method can also be based on measuring the weight W of rejected or dropped PR or SOG after the surface of the HSG layer has been coated with a layer of either photoresist or SOG. The weight of the rejected or dropped PR or SOG also provides an indicator of the roughness or smoothness of the surface of the deposited layer of HSG.
摘要翻译：基于测量在HSG层的表面之前（W1）和之后（W2）的晶片（其上沉积了HSG的层）的重量的新方法涂覆有光致抗蚀剂或SOG层。差值ΔW= W2-W1提供HSG沉积层的表面的粗糙度或平滑度的指标。这种新方法也可以基于测量在HSG层的表面已经涂覆有光致抗蚀剂或SOG层之后的被拒绝或掉落的PR或SOG的重量W。拒收或掉落的PR或SOG的重量也提供HSG沉积层的表面的粗糙度或平滑度的指标。

7. 发明申请

US20080318454A1 System and Method for Coupling an Integrated Circuit to a Circuit Board 有权
标题翻译：将集成电路耦合到电路板的系统和方法
公开(公告)号：US20080318454A1
公开(公告)日：2008-12-25
申请号：US11766204
申请日：2007-06-21
申请人： Chen-Fa Wu , Chih-Nan Lin , Kuo-Ching Huang , Chin-An Huang
发明人： Chen-Fa Wu , Chih-Nan Lin , Kuo-Ching Huang , Chin-An Huang
IPC分类号： H01R12/16
CPC分类号： H05K1/0271 , H05K2201/044 , H05K2201/09063 , H05K2201/10409 , H05K2201/10734
摘要： An information handling system circuit board has an opening formed through it proximate a coupling point of an integrated circuit to the circuit board. The opening manages stress at the coupling point of the integrated circuit to the circuit board to reduce the risk of damage to the coupling point during deformation of the circuit board, such as when the circuit board is coupled to a chassis or when a component is pressed into the circuit board. In one embodiment, rectangular openings are formed at diagonally opposed corners of a BSA integrated circuit. In alternative embodiments, openings of varying shape, such as slots or curved slots, are formed at selected corners of the integrated circuit.
摘要翻译：信息处理系统电路板具有通过其形成的开口，其靠近集成电路到电路板的耦合点。开口处理集成电路到电路板的耦合点处的应力，以减少在电路板变形期间对耦合点的损坏的风险，例如当电路板耦合到底盘或当部件被按压时进入电路板。在一个实施例中，在BSA集成电路的对角相对的角上形成矩形开口。在替代实施例中，在集成电路的选定角处形成变化形状的开口，例如槽或弯曲槽。

8. 发明申请

US20060061837A1 CLAMP FOR FIXING A PHOTOGRAPHIC SLIDE OR NEGATIVE 审中-公开
标题翻译：用于固定摄影幻灯片或负片的夹具
公开(公告)号：US20060061837A1
公开(公告)日：2006-03-23
申请号：US10904740
申请日：2004-11-24
申请人： Kuo-Ching Huang , Yu-Cheng Chang
发明人： Kuo-Ching Huang , Yu-Cheng Chang
IPC分类号： H04N1/23
CPC分类号： H04N1/1013 , H04N2201/0406 , H04N2201/0408 , H04N2201/0422
摘要： A clamp for fixing a photographic slide and/or a photographic negative includes a carrier and a cover for fixing the slide or negative onto the carrier. The carrier includes a first guide for holding the negative, and a second guide extended from the first guide for holding the photographic slide.
摘要翻译：用于固定照相底片和/或照相底片的夹具包括用于将滑块或阴极固定到载体上的载体和盖。载体包括用于保持负片的第一引导件和从第一引导件延伸以保持照相载玻片的第二引导件。

9. 发明授权

US07619166B2 Bus structure 有权
标题翻译：总线结构
公开(公告)号：US07619166B2
公开(公告)日：2009-11-17
申请号：US11136558
申请日：2005-05-25
申请人： Kuo-Ching Huang , Yu-Cheng Chang
发明人： Kuo-Ching Huang , Yu-Cheng Chang
IPC分类号： H01B7/08
CPC分类号： H05K1/147 , H04N1/00519 , H04N1/1017 , H04N1/193 , H04N2201/0081 , H05K1/144 , H05K2201/09109
摘要： A bus structure may include two or more soft buses and one or more soft separation layers. The two or more soft buses may be stacked side by side with respect to each other. The one or more soft separation layers may be sandwiched between two adjacent soft buses of the two or more soft buses.
摘要翻译：总线结构可以包括两个或更多个软总线和一个或多个软分离层。两个以上的软总线可以相对于彼此并排堆叠。一个或多个软分离层可以夹在两个或多个软总线的两个相邻的软总线之间。

10. 发明申请

US20070129189A1 Belt tension adjustment mechanism 审中-公开
标题翻译：皮带张力调节机制
公开(公告)号：US20070129189A1
公开(公告)日：2007-06-07
申请号：US11332340
申请日：2006-01-17
申请人： Kuo-Ching Huang , Yu-Cheng Chang
发明人： Kuo-Ching Huang , Yu-Cheng Chang
IPC分类号： F16H7/18 , F16H7/08
CPC分类号： F16H7/08 , F16H2007/0806 , F16H2007/0812
摘要： A belt tension adjustment mechanism for use in an optical module of a scanning apparatus includes a sliding member, a fixture member, a supporting member and a resilient member. The sliding member is arranged on a surface of the optical module and movable on the surface of the optical module. The fixture member is used to fix the belt. The supporting member supports the belt. By means of the resilient member, a tension is applied onto the belt.
摘要翻译：用于扫描装置的光学模块中的皮带张力调节机构包括滑动构件，固定构件，支撑构件和弹性构件。滑动构件布置在光学模块的表面上并且可在光学模块的表面上移动。固定件用于固定皮带。支撑构件支撑带。通过弹性构件，张力被施加到带上。

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