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    • 4. 发明授权
    • Semiconductor laser device and a method for fabricating the same
    • 半导体激光器件及其制造方法
    • US4025939A
    • 1977-05-24
    • US606053
    • 1975-08-20
    • Kunio AikiHitachi, Ltd.Michiharu NakamuraJun-Ichi Umeda
    • Kunio AikiHitachi, Ltd.Michiharu NakamuraJun-Ichi Umeda
    • H01S5/00H01S5/12H01L33/00H01L29/161
    • H01S5/12H01S5/1215
    • A semiconductor laser device comprises an n-type GaAs layer, an n-type GaAlAs layer disposed on the n-type GaAs layer, an optical confinement region comprising a laser active region consisting of GaAs disposed on the n-type GaAlAs layer, a first p-type GaAlAs region whose aluminum content is less than that of the n-type GaAlAs layer, disposed on said laser active region and a second p-type GaAlAs region whose aluminum content is less than that of the first p-type GaAlAs region, the surface of which opposite that disposed on said first p-type GaAlAs region is a periodically corrugated surface, a p-type GaAlAs layer whose aluminum content is more than that of said first p-type GaAlAs region, disposed on the periodically corrugated surface of the second p-type GaAlAs region, a p-type GaAs layer disposed on said p-type GaAlAs layer, and electrodes disposed on the n-type and p-type GaAs layers, respectively, and which has a very low threshold value for laser oscillation and which is fabricated with a very high yield rate.
    • 一种半导体激光器件包括:n型GaAs层,n型GaAlAs层,设置在n型GaAs层上;光限制区,包括由设置在n型GaAlAs层上的GaAs构成的激光有源区;第一 其铝含量小于位于所述激光有源区上的n型GaAlAs层的p型GaAlAs区域和铝含量小于第一p型GaAlAs区域的第二p型GaAlAs区域, 其表面设置在所述第一p型GaAlAs区域上的表面是周期性波纹状表面,其铝含量大于所述第一p型GaAlAs区域的铝含量的p型GaAlAs层,其设置在 第二p型GaAlAs区域,设置在所述p型GaAlAs层上的p型GaAs层和分别设置在n型和p型GaAs层上的电极,并且具有非常低的激光阈值 振荡,是织物 以非常高的产量率。
    • 7. 发明授权
    • Semiconductor laser device
    • 半导体激光器件
    • US4432091A
    • 1984-02-14
    • US342357
    • 1982-01-25
    • Takao KurodaTakashi KajimuraYasutoshi KashiwadaNaoki ChinoneKunio AikiJun-ichi Umeda
    • Takao KurodaTakashi KajimuraYasutoshi KashiwadaNaoki ChinoneKunio AikiJun-ichi Umeda
    • H01L21/208H01S5/00H01S5/10H01S3/19
    • H01S5/10
    • In a semiconductor laser device having at least a first semiconductor layer, second and third semiconductor layers which are formed in a manner to sandwich the first semiconductor layer and which have a wider band gap and a lower refractive index than those of the first semiconductor layer, an optical resonator and carrier injection means; a semiconductor laser device characterized in that at least said first semiconductor layer has an angle of inclination (.theta.) relative to an axis which is perpendicular to optically flat faces constituting said optical resonator. The inclination angle .theta. (rad) should most preferably lie in a range of: ##EQU1## where .theta..sub.z denotes a reflection angle, .theta..sub.c a critical angle, W 1/2 of a thickness of a waveguide, and l a cavity length. The laser device is effective for preventing laser facets from breaking down, and can produce high power.
    • 在具有至少第一半导体层的半导体激光器件中,以夹着第一半导体层的方式形成并且具有比第一半导体层的折射率更宽的带隙和更低折射率的第二和第三半导体层, 光学谐振器和载体注入装置; 一种半导体激光器件,其特征在于,至少所述第一半导体层相对于垂直于构成所述光谐振器的光学平面的轴线具有倾斜角(θ)。 倾斜角度θ(rad)应最优选在以下范围内:θz表示反射角,θc临界角,波导厚度的W 1/2,以及l腔长度。 激光装置有效防止激光刻面破碎,并能产生高功率。