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1. 发明授权

US07209019B2 Switch 有权
标题翻译：开关
公开(公告)号：US07209019B2
公开(公告)日：2007-04-24
申请号：US11201541
申请日：2005-08-11
申请人： Yoshito Nakanishi , Norisato Shimizu , Kunihiko Nakamura , Yasuyuki Naito
发明人： Yoshito Nakanishi , Norisato Shimizu , Kunihiko Nakamura , Yasuyuki Naito
IPC分类号： H01H51/22
CPC分类号： H01H59/0009 , H01G5/40 , H01H2001/0078 , H01H2059/0027
摘要： A switch comprises voltage applying means for providing direct current potentials to first to third beams arranged with a spacing slightly distant one from another, and electrodes for inputting/outputting signals to/from the beams. By controlling the direct current potential provided to the beam, an electrostatic force is caused to thereby change the beam positions and change a capacitance between the beams. By causing an electrostatic force between the first and second beams and moving the both beams, the first and second beams can be electrically coupled together at high speed. Also, an electrostatic force is caused on the third beam arranged facing to the first and second beams, to previously place it close to the first and second beams. When the electrostatic force is released from between the first and second beams, the second beam moves toward the third beam thereby releasing the first and second beams of an electric coupling.
摘要翻译：开关包括电压施加装置，用于向彼此稍微间隔的间隔布置的第一至第三波束提供直流电势，以及用于向/从波束输入/输出信号的电极。通过控制提供给光束的直流电势，引起静电力从而改变光束位置并改变光束之间的电容。通过在第一和第二光束之间引起静电力并移动两个光束，第一和第二光束可以高速电耦合在一起。此外，在面向第一和第二光束的第三光束上产生静电力，以预先将其靠近第一和第二光束。当静电力从第一和第二光束之间释放时，第二光束向第三光束移动，从而释放电耦合的第一和第二光束。

2. 发明授权

US06982616B2 Switch with current potential control 有权
标题翻译：切换电流电位控制
公开(公告)号：US06982616B2
公开(公告)日：2006-01-03
申请号：US10624381
申请日：2003-07-22
申请人： Yoshito Nakanishi , Norisato Shimizu , Kunihiko Nakamura , Yasuyuki Naito
发明人： Yoshito Nakanishi , Norisato Shimizu , Kunihiko Nakamura , Yasuyuki Naito
IPC分类号： H01H51/22
CPC分类号： H01H59/0009 , H01G5/40 , H01H2001/0078 , H01H2059/0027
摘要： A switch comprises voltage applying means for providing direct current potentials to first to third beams arranged with a spacing slightly distant one from another, and electrodes for inputting/outputting signals to/from the beams. By controlling the direct current potential provided to the beam, an electrostatic force is caused to thereby change the beam positions and change a capacitance between the beams. By causing an electrostatic force between the first and second beams and moving the both beams, the first and second beams can be electrically coupled together at high speed. Also, an electrostatic force is caused on the third beam arranged facing to the first and second beams, to previously place it close to the first and second beams. When the electrostatic force is released from between the first and second beams, the second beam moves toward the third beam thereby releasing the first and second beams of an electric coupling.
摘要翻译：开关包括电压施加装置，用于向彼此稍微间隔的间隔布置的第一至第三波束提供直流电势，以及用于向/从波束输入/输出信号的电极。通过控制提供给光束的直流电势，引起静电力从而改变光束位置并改变光束之间的电容。通过在第一和第二光束之间引起静电力并移动两个光束，第一和第二光束可以高速电耦合在一起。此外，在面向第一和第二光束的第三光束上产生静电力，以预先将其靠近第一和第二光束。当静电力从第一和第二光束之间释放时，第二光束向第三光束移动，从而释放电耦合的第一和第二光束。

3. 发明申请

US20050162244A1 Switch 审中-公开
公开(公告)号：US20050162244A1
公开(公告)日：2005-07-28
申请号：US11063282
申请日：2005-02-22
申请人： Yasuyuki Naito , Yoshito Nakanishi , Norisato Shimizu , Kunihiko Nakamura
发明人： Yasuyuki Naito , Yoshito Nakanishi , Norisato Shimizu , Kunihiko Nakamura
IPC分类号： B81B3/00 , H01H47/22 , H01H53/02 , H01H59/00 , H01P1/10 , H01P1/12 , H01H51/22
CPC分类号： H01P1/127 , H01H59/0009
摘要： A switch for switching over a propagation path of external signal by contacting or non-contacting a movable member to or from an electrode. The switch comprises an input port for inputting an external signal, a movable member connected to the input port, a first electrode for propagating the external signal, a first control power supply connected to the first electrode and for generating a control signal, a second electrode for blocking the external signal, and a second control power supply connected to the second electrode and for generating a control signal. The first control power supply provides a control signal to the first electrode. The movable member is displaced by a driving force generated based on a potential difference between the movable member and first electrode and a potential difference between the movable member and second electrode, thereby being contacted to the first or second electrode.

4. 发明授权

US06891454B1 Switch 失效
标题翻译：开关
公开(公告)号：US06891454B1
公开(公告)日：2005-05-10
申请号：US10625154
申请日：2003-07-23
申请人： Yasuyuki Naito , Yoshito Nakanishi , Norisato Shimizu , Kunihiko Nakamura
发明人： Yasuyuki Naito , Yoshito Nakanishi , Norisato Shimizu , Kunihiko Nakamura
IPC分类号： B81B3/00 , H01H47/22 , H01H53/02 , H01H59/00 , H01P1/10 , H01P1/12 , H01H51/22
CPC分类号： H01P1/127 , H01H59/0009
摘要： A switch for switching over a propagation path of external signal by contacting or non-contacting a movable member to or from an electrode. The switch comprises an input port for inputting an external signal, a movable member connected to the input port, a first electrode for propagating the external signal, a first control power supply connected to the first electrode and for generating a control signal, a second electrode for blocking the external signal, and a second control power supply connected to the second electrode and for generating a control signal. The first control power supply provides a control signal to the first electrode. The movable member is displaced by a driving force generated based on a potential difference between the movable member and first electrode and a potential difference between the movable member and second electrode, thereby being contacted to the first or second electrode.
摘要翻译：用于通过使可动构件接触或不接触电极来切换外部信号的传播路径的开关。开关包括用于输入外部信号的输入端口，连接到输入端口的可动件，用于传播外部信号的第一电极，连接到第一电极并用于产生控制信号的第一控制电源，用于产生控制信号的第二电极用于阻挡外部信号，以及连接到第二电极并用于产生控制信号的第二控制电源。第一控制电源向第一电极提供控制信号。通过基于可动构件和第一电极之间的电位差产生的驱动力和可动构件与第二电极之间的电位差而使可动构件位移，从而与第一或第二电极接触。

5. 发明授权

US06992551B2 Switch and method for manufacturing the same 失效
标题翻译：开关及其制造方法
公开(公告)号：US06992551B2
公开(公告)日：2006-01-31
申请号：US10628549
申请日：2003-07-28
申请人： Norisato Shimizu , Yoshito Nakanishi , Kunihiko Nakamura , Yasuyuki Naito
发明人： Norisato Shimizu , Yoshito Nakanishi , Kunihiko Nakamura , Yasuyuki Naito
IPC分类号： H01H51/22
CPC分类号： H01H59/0009
摘要： Disclosed is a switch having a movable electrode to be separately driven downward and upward to secure signal transmission efficiency and insulation capability and operate for signal connection and disconnect at a high speed. The switch comprises a movable electrode, a fixed electrode positioned beneath the movable electrode, and a movable electrode driving fixed electrode positioned on both sides of the movable electrode with respect to a length wise direction thereof. Inside surfaces of the movable electrode, concave and convex parts are formed to arrange on both sides fixed electrodes having the corresponding concave and convex parts with a space.
摘要翻译：公开了一种开关，其具有可分别向下并向上驱动的可动电极，以确保信号传输效率和绝缘能力，并且以高速度进行信号连接和断开操作。该开关包括可动电极，位于可动电极下方的固定电极以及位于可动电极的相对于其长度方向两侧的可动电极驱动固定电极。可动电极的内表面，凹凸部分形成为具有空间相对的具有相应凹凸部分的固定电极。

6. 发明申请

US20050270128A1 Switch 有权
标题翻译：开关
公开(公告)号：US20050270128A1
公开(公告)日：2005-12-08
申请号：US11201541
申请日：2005-08-11
申请人： Yoshito Nakanishi , Norisato Shimizu , Kunihiko Nakamura , Yasuyuki Naito
发明人： Yoshito Nakanishi , Norisato Shimizu , Kunihiko Nakamura , Yasuyuki Naito
IPC分类号： B81B3/00 , H01H49/00 , H01H59/00 , H01H51/22
CPC分类号： H01H59/0009 , H01G5/40 , H01H2001/0078 , H01H2059/0027
摘要： A switch comprises voltage applying means for providing direct current potentials to first to third beams arranged with a spacing slightly distant one from another, and electrodes for inputting/outputting signals to/from the beams. By controlling the direct current potential provided to the beam, an electrostatic force is caused to thereby change the beam positions and change a capacitance between the beams. By causing an electrostatic force between the first and second beams and moving the both beams, the first and second beams can be electrically coupled together at high speed. Also, an electrostatic force is caused on the third beam arranged facing to the first and second beams, to previously place it close to the first and second beams. When the electrostatic force is released from between the first and second beams, the second beam moves toward the third beam thereby releasing the first and second beams of an electric coupling.
摘要翻译：开关包括电压施加装置，用于向彼此稍微间隔的间隔布置的第一至第三波束提供直流电势，以及用于向/从波束输入/输出信号的电极。通过控制提供给光束的直流电势，引起静电力从而改变光束位置并改变光束之间的电容。通过在第一和第二光束之间引起静电力并移动两个光束，第一和第二光束可以高速电耦合在一起。此外，在面向第一和第二光束的第三光束上产生静电力，以预先将其靠近第一和第二光束。当静电力从第一和第二光束之间释放时，第二光束向第三光束移动，从而释放电耦合的第一和第二光束。

7. 发明授权

US06813135B2 Variable capacitor and method for manufacturing same 失效
标题翻译：可变电容器及其制造方法
公开(公告)号：US06813135B2
公开(公告)日：2004-11-02
申请号：US10626963
申请日：2003-07-25
申请人： Kunihiko Nakamura , Yoshito Nakanishi , Norisato Shimizu , Yasuyuki Naito
发明人： Kunihiko Nakamura , Yoshito Nakanishi , Norisato Shimizu , Yasuyuki Naito
IPC分类号： H01G500
CPC分类号： H01G5/18 , Y10T29/435
摘要： A variable capacitor of the invention includes a beam having flexibility and an electrode provided close to the beam in order to form a capacitor with the beam. By applying a voltage to between the beam and the electrode to thereby deflect the beam by an electrostatic force, a capacitance between the both is changed. The deflected beam and the electrode are placed into contact through an insulation layer formed on a surface of at least one thereof, to change a contact area thereof, thereby changing the capacitance. Meanwhile, the electrode is divided in plurality. A recess is formed such that one electrode is lower than a height of another electrode surface. By applying a voltage to the beam and the electrode corresponding to the recess, the beam is pulled to an inside of the recess, thereby enabling to eliminate stiction.
摘要翻译：本发明的可变电容器包括具有柔性的光束和靠近光束设置的电极，以便与光束形成电容器。通过在光束和电极之间施加电压从而通过静电力使光束偏转，两者之间的电容发生变化。偏转的光束和电极通过形成在其至少一个的表面上的绝缘层而接触，以改变其接触面积，从而改变电容。同时，电极被分成多个。形成凹部，使得一个电极低于另一个电极表面的高度。通过对与凹部对应的光束和电极施加电压，将光束拉到凹部的内部，从而能够消除静电。

8. 发明授权

US5472906A Method of forming isolation 失效
标题翻译：形成隔离的方法
公开(公告)号：US5472906A
公开(公告)日：1995-12-05
申请号：US291914
申请日：1994-08-18
申请人： Norisato Shimizu , Yasushi Naito , Yuichi Hirofuji
发明人： Norisato Shimizu , Yasushi Naito , Yuichi Hirofuji
IPC分类号： H01L21/32 , H01L21/762 , H01L21/76
CPC分类号： H01L21/32 , H01L21/76205
摘要： A first underlaid oxide layer, a polysilicon layer, and a first silicon nitride layer are formed on a silicon substrate in this order. Using a photoresist as a mask, a portion of the first silicon nitride layer, the polysilicon layer, the first underlaid oxide layer and the silicon substrate which is to be an isolation region is etched by a depth which regulates a length of bird's beak and a threshold voltage drop of a FET adequately. After forming a second underlaid oxide layer and a second silicon nitride layer, silicon nitride side walls of more than 25 nm in thickness are formed. An isolation oxide layer is formed by selective oxidation, using the silicon nitride layer as a mask. Favorable etched depth in the step of removing the silicon substrate is one third of the thickness of the isolation oxide layer. Favorable etched depth in case of a normal FET is 20-100 nm. Thus, bird's beak length is reduced, while adequately maintaining the threshold of the transistor at formation of the isolation of transistor. In a DRAM cell pattern, isolation of not exceeding 0.2 .mu.m width can be formed.
摘要翻译：在硅衬底上依次形成第一衬底氧化物层，多晶硅层和第一氮化硅层。使用光致抗蚀剂作为掩模，通过调节鸟喙长度的深度蚀刻作为隔离区域的第一氮化硅层，多晶硅层，第一底层氧化物层和硅衬底的一部分，足够的FET的阈值电压降。在形成第二底层氧化物层和第二氮化硅层之后，形成厚度大于25nm的氮化硅侧壁。通过使用氮化硅层作为掩模，通过选择性氧化形成隔离氧化物层。在去除硅衬底的步骤中有利的蚀刻深度是隔离氧化物层的厚度的三分之一。在正常FET的情况下，有利的蚀刻深度为20-100nm。因此，在形成晶体管的隔离的同时充分保持晶体管的阈值，鸟的喙长度被减小。在DRAM单元图案中，可以形成不超过0.2μm宽度的隔离。

9. 发明授权

US5436176A Method for fabricating a semiconductor device by high energy ion implantation while minimizing damage within the semiconductor substrate 失效
标题翻译：通过高能离子注入制造半导体器件的方法，同时使半导体衬底内的损伤最小化
公开(公告)号：US5436176A
公开(公告)日：1995-07-25
申请号：US821647
申请日：1992-01-16
申请人： Norisato Shimizu , Bunji Mizuno , Shuichi Kameyama
发明人： Norisato Shimizu , Bunji Mizuno , Shuichi Kameyama
IPC分类号： H01L21/265 , H01L21/322 , H01L21/74 , H01L21/8238 , H01L27/092 , H01L21/22
CPC分类号： H01L21/2652 , H01L21/74
摘要： A semiconductor device having superior electrical characteristics is fabricated. 50 nm of the surface of a CZ (100) silicon substrate is oxidized to form an oxidized film. Afterwards a first ion implantation of boron ions is conducted to this silicon substrate amounting to 7.times.10.sup.13 cm.sup.-2 with acceleration energy of 1.5 MeV. Next, a first annealing in nitrogen ambient at 1050.degree. C. for 40 minutes is conducted. Through this ion implantation process a damaged layer and a dopant layer are formed within the silicon substrate. Boron ions are implanted as a second ion implantation, with a dosage of 7.times.10.sup.13 cm.sup.-2, followed by a second implanted annealing in nitrogen ambient at 1050.degree. C. for 40 minutes. Further, as a third ion implantation, boron ions are implanted with a dosage of 6.times.10.sup.13 cm.sup.-2 followed by a third annealing in nitrogen ambient at 1050.degree. C. for 40 minutes. In the dopant layer thus formed, through a plurality of repeated high energy ion implantation and subsequent annealing, in order to obtain the desired dopant concentration, density of secondary defect occurrences may be lowered.
摘要翻译：制造具有优异电特性的半导体器件。 CZ（100）硅衬底的表面的50nm被氧化以形成氧化膜。此后，以1.5MeV的加速能量对该硅衬底进行第一离子注入，达到7×10 13 cm -2。接下来，进行在1050℃，氮气环境中进行40分钟的第一次退火。通过该离子注入工艺，在硅衬底内形成损伤层和掺杂剂层。硼离子作为第二离子注入植入，剂量为7×10 13 cm -2，随后在氮环境中在1050℃下进行第二次注入退火40分钟。此外，作为第三离子注入，硼离子以6×10 13 cm -2的剂量注入，然后在氮环境中在1050℃下进行第三次退火40分钟。在如此形成的掺杂剂层中，通过多次重复的高能离子注入和随后的退火，为了获得所需的掺杂剂浓度，二次缺陷发生的密度可能降低。

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