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    • 7. 发明申请
    • SEMICONDUCTOR ELEMENT AND METHOD FOR MANUFACTURING THE SAME
    • 半导体元件及其制造方法
    • US20110101354A1
    • 2011-05-05
    • US12864461
    • 2009-01-08
    • Yuichi SaitoMasao MoriguchiAkihiro Kohno
    • Yuichi SaitoMasao MoriguchiAkihiro Kohno
    • H01L33/16H01L21/336
    • H01L29/78669H01L29/66765H01L29/78609H01L29/78618H01L29/78678
    • A semiconductor device 101 includes: a substrate 1; an active layer 4 provided on the substrate 1, the active layer 4 including a channel region 4c and a first region 4a and a second region 4b that are respectively located on opposite sides of the channel region 4c; a first contact layer 6a and a second contact layer 6b which are respectively in contact with the first region 4a and the second region 4b of the active layer 4; a first electrode 7 electrically coupled to the first region 4a via the first contact layer 6a; a second electrode 8 electrically coupled to the second region 4b via the second contact layer 6b; and a gate electrode 2 which is provided such that a gate insulating layer 3 is interposed between the gate electrode 2 and the active layer 4, the gate electrode 2 being configured to control a conductivity of the channel region 4c. The active layer 4 contains silicon. The semiconductor device further includes an oxygen-containing silicon layer 5 between the active layer 4 and the first and second contact layers 6a, 6b. The oxygen-containing silicon layer 5 contains oxygen at a concentration higher than the active layer 4 and the first and second contact layers 6a, 6b.
    • 半导体器件101包括:衬底1; 设置在基板1上的有源层4,有源层4包括分别位于沟道区域4c的相对侧上的沟道区域4c和第一区域4a和第二区域4b; 分别与有源层4的第一区域4a和第二区域4b接触的第一接触层6a和第二接触层6b; 经由第一接触层6a电耦合到第一区域4a的第一电极7; 经由第二接触层6b电耦合到第二区域4b的第二电极8; 栅极电极2被设置为使得栅极绝缘层3插入在栅极电极2和有源层4之间,栅电极2被配置为控制沟道区域4c的导电性。 有源层4含有硅。 半导体器件还包括有源层4和第一和第二接触层6a,6b之间的含氧硅层5。 含氧硅层5含有浓度高于有源层4和第一和第二接触层6a,6b的氧。