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1. 发明授权

US5833770A High frequency soft magnetic alloy and plane magnetic element, antenna and wave absorber comprising the same 失效
标题翻译：高频软磁合金和平面磁性元件，天线和包括它的波吸收体
公开(公告)号：US5833770A
公开(公告)日：1998-11-10
申请号：US802040
申请日：1997-02-18
申请人： Kumiko Ominato , Naoya Hasegawa , Yasuo Hayakawa , Akihiro Makino
发明人： Kumiko Ominato , Naoya Hasegawa , Yasuo Hayakawa , Akihiro Makino
IPC分类号： C23C14/18 , H01F1/153 , H01Q7/08 , H01Q17/00 , H01F1/147
CPC分类号： H01Q7/08 , C23C14/185 , H01F1/15316 , H01Q17/00
摘要： A soft magnetic alloy used as a radio frequency magnetic material and having high resistivity and high magnetic permeability in a high frequency band, and an inductor, a wave absorber and antenna each comprising the soft magnetic alloy. The soft magnetic alloy has a crystal phase containing Co as a main component and at least one element T selected as a primary component from Fe, Ni, Pd, Mn and Al, and having a face-centered cubic structure, a body-centered cubic structure or a mixture thereof having an average crystal grain size of 30 nm or less; and a ferromagnetic amorphous phase surrounding the crystal phase and containing at least one element M selected from Ti, Zr, Hf, Nb, Ta, Mo, W, Y and rare earth elements, O, N, C, B, at least one oxide of element M, Fe and element T.
摘要翻译：用作射频磁性材料并在高频带中具有高电阻率和高磁导率的软磁合金，以及每个包含该软磁合金的电感器，波吸收器和天线。该软磁性合金具有含有Co作为主要成分和从Fe，Ni，Pd，Mn和Al中选择为主要成分的至少一种元素T的晶相，并且具有面心立方结构，体心立方体结构或其平均晶粒尺寸为30nm以下的混合物; 以及包含结晶相并含有选自Ti，Zr，Hf，Nb，Ta，Mo，W，Y和稀土元素，O，N，C，B中的至少一种元素M的铁磁非晶相，至少一种氧化物元素M，Fe和元素T.

2. 发明授权

US06351204B1 Thin magnetic element and transformer 失效
标题翻译：薄磁元件和变压器
公开(公告)号：US06351204B1
公开(公告)日：2002-02-26
申请号：US09565285
申请日：2000-05-02
申请人： Kiyohito Yamasawa , Yasuo Hayakawa , Takashi Hatanai , Akihiro Makino , Yutaka Naito , Naoya Hasegawa
发明人： Kiyohito Yamasawa , Yasuo Hayakawa , Takashi Hatanai , Akihiro Makino , Yutaka Naito , Naoya Hasegawa
IPC分类号： H01F500
CPC分类号： H01F10/187 , H01F17/0006 , H01F2017/0066
摘要： A thin magnetic element comprising a coil pattern formed on at least one side of a substrate and a thin magnetic film formed on the coil pattern, wherein, assuming that the thickness and width of a coil conductor constituting the coil pattern are t and a, respectively, an aspect ratio t/a of the coil conductor satisfies the relationship 0.035≦t/a≦0.35, and the thin magnetic film has a resistivity of 400 &mgr;&OHgr;cm or more.
摘要翻译：一种薄磁性元件，包括形成在衬底的至少一侧的线圈图案和形成在线圈图案上的薄磁膜，其中，假定构成线圈图案的线圈导体的厚度和宽度分别为t和a ，线圈导体的纵横比t / a满足关系0.035 <= t / a <= 0.35，薄磁膜的电阻率为400μΩEG·cm以上。

3. 发明授权

US6140902A Thin magnetic element and transformer 失效
标题翻译：薄磁元件和变压器
公开(公告)号：US6140902A
公开(公告)日：2000-10-31
申请号：US904058
申请日：1997-07-31
申请人： Kiyohito Yamasawa , Yasuo Hayakawa , Takashi Hatanai , Akihiro Makino , Yutaka Naito , Naoya Hasegawa
发明人： Kiyohito Yamasawa , Yasuo Hayakawa , Takashi Hatanai , Akihiro Makino , Yutaka Naito , Naoya Hasegawa
IPC分类号： H01F10/14 , H01F10/187 , H01F17/00 , H01F27/30
CPC分类号： H01F10/187 , H01F17/0006 , H01F2017/0066
摘要： A thin magnetic element which comprises a coil pattern formed on at least one side of a substrate and a thin magnetic film formed on the coil pattern, wherein:said thin magnetic film is for++med to a thickness of 0.5 .mu.m or greater but 8 .mu.m or smaller;and at least one of the following conditions, that is, assuming that the thickness and width of a coil conductor constituting the coil pattern are t and a, respectively, an aspect ratio t/a of the coil conductor satisfies the following relationship: 0.035.ltoreq.t/a.ltoreq.0.35;and assuming that the width of the conductor constituting the coil pattern is a and the distance between the mutually adjacent coil conductors in the coil pattern is b, the following relationship: 0.2.ltoreq.a/(a+b) is satisfied.
摘要翻译：一种薄磁性元件，其包括形成在基板的至少一侧的线圈图案和形成在线圈图案上的薄磁膜，其中：所述薄磁膜用于++ med至0.5μm或更大的厚度，但是 8亩以下; 以及以下条件中的至少一个，即构成线圈图案的线圈导体的厚度和宽度分别为t和a，线圈导体的纵横比t / a满足以下关系：0.035 < /=t/a

4. 发明授权

US06282069B1 Magnetoresistive element having a first antiferromagnetic layer contacting a pinned magnetic layer and a second antiferromagnetic layer contacting a free magnetic layer 失效
标题翻译：磁阻元件具有接触被钉扎的磁性层的第一反铁磁层和接触自由磁性层的第二反铁磁层
公开(公告)号：US06282069B1
公开(公告)日：2001-08-28
申请号：US09062027
申请日：1998-04-17
申请人： Yukie Nakazawa , Masamichi Saito , Naoya Hasegawa , Akihiro Makino
发明人： Yukie Nakazawa , Masamichi Saito , Naoya Hasegawa , Akihiro Makino
IPC分类号： G11B5127
CPC分类号： B82Y25/00 , B82Y10/00 , B82Y40/00 , G11B5/3903 , G11B2005/3996 , G11C11/1675 , H01F10/3268 , H01F41/304 , Y10T29/49032 , Y10T29/49034 , Y10T29/49043 , Y10T29/49044 , Y10T29/49055
摘要： A second antiferromagnetic layer formed on a free magnetic layer has a blocking temperature lower than that of a first antiferromagnetic layer. The exchange anisotropic magnetic field between the free magnetic layer and the second antiferromagnetic layer is smaller than the exchange anisotropic magnetic field between the first antiferromagnetic layer and the pinned magnetic layer. By applying an annealing treatment utilizing the blocking temperature difference between the first and second antiferromagnetic layers, the magnetization direction and the strength of the pinned magnetic layer and the free magnetic layer can be controlled appropriately.
摘要翻译：形成在自由磁性层上的第二反铁磁层的阻挡温度低于第一反铁磁性层的阻挡温度。自由磁性层与第二反铁磁性层之间的交换各向异性磁场小于第一反铁磁性层与被钉扎磁性层之间的交换各向异性磁场。通过利用第一和第二反铁磁层之间的阻挡温度差进行退火处理，可以适当地控制磁化方向和钉扎磁性层和自由磁性层的强度。

5. 发明授权

US06191577B1 Magnetic sensor exhibiting large change in resistance at low external magnetic field 失效
标题翻译：磁传感器在低外部磁场下表现出较大的电阻变化
公开(公告)号：US06191577B1
公开(公告)日：2001-02-20
申请号：US09036606
申请日：1998-03-06
申请人： Yoshito Sasaki , Naoya Hasegawa , Akihiro Makino , Ichiro Tokunaga , Seiji Kikuchi
发明人： Yoshito Sasaki , Naoya Hasegawa , Akihiro Makino , Ichiro Tokunaga , Seiji Kikuchi
IPC分类号： G01R3309
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B2005/3996 , H01F10/3268
摘要： A magnetoresistive sensor includes a plurality of multilayered magnetoresistive films arranged in parallel. Each multilayered magnetoresistive film includes at least one pinned ferromagnetic layer and at least one free magnetic layer. Reversion of magnetization of the pinned ferromagnetic layer is pinned, whereas the vector of magnetization of the free ferromagnetic layer freely reverses in response to an external magnetic field. The vectors of magnetization of the pinned ferromagnetic layers in two adjacent multilayered magnetoresistive films are substantially antiparallel to each other.
摘要翻译：磁阻传感器包括并列布置的多个多层磁阻膜。每个多层磁阻膜包括至少一个钉扎铁磁层和至少一个自由磁性层。固定的铁磁层的磁化反转被固定，而自由铁磁层的磁化矢量响应于外部磁场自由地反转。两个相邻的多层磁阻膜中的钉扎铁磁层的磁化向量基本上是反平行的。

6. 发明授权

US06496338B2 Spin-valve magnetoresistive sensor including a first antiferromagnetic layer for increasing a coercive force and a second antiferromagnetic layer for imposing a longitudinal bias 失效
标题翻译：旋转阀磁阻传感器包括用于增加矫顽力的第一反铁磁层和用于施加纵向偏压的第二反铁磁层
公开(公告)号：US06496338B2
公开(公告)日：2002-12-17
申请号：US09891327
申请日：2001-06-25
申请人： Naoya Hasegawa , Masamichi Saito , Akihiro Makino
发明人： Naoya Hasegawa , Masamichi Saito , Akihiro Makino
IPC分类号： G11B539
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/012 , G11B5/3163 , G11B5/3903 , G11B5/3929 , G11B5/3967 , G11B2005/3996 , H01F10/3268 , H01L43/10 , H01L43/12
摘要： The present invention provides a spin-valve magnetoresistive sensor comprising at least two ferromagnetic layers including a first and a second ferromagnetic layers. A first antiferromagnetic layer is layered adjacent to the first ferromagnetic layer for increasing the coercive force of the first ferromagnetic layer to pin the magnetization direction of the first ferromagnetic layer. A pair of second antiferromagnetic layers are respectively positioned adjacent to the longitudinal ends of the second ferromagnetic layer. Further, a pair of third ferromagnetic layers are respectively layered adjacent to said pair of second antiferromagnetic layers for inducing magnetic anisotropy to pin the magnetization direction of each third ferromagnetic layer in a direction perpendicular to the pinned magnetization direction of the first ferromagnetic layer, thereby imposing a longitudinal bias on the second ferromagnetic layer to stabilize magnetic domains therein in order to suppress Barkhausen noise. The magnetization direction of the second ferromagnetic layer remains free to rotate in accordance with the direction of an external magnetic field, thereby changing the electrical resistance of the sensor.
摘要翻译：本发明提供一种自旋阀磁阻传感器，其包括至少两个包含第一和第二铁磁层的铁磁层。第一反铁磁性层与第一铁磁层相邻地层叠，以增加第一铁磁性层的矫顽力来固定第一铁磁性层的磁化方向。一对第二反铁磁层分别邻近第二铁磁层的纵向端部定位。此外，一对第三铁磁层分别与所述一对第二反铁磁层相邻地层叠，用于引起磁各向异性以在垂直于第一铁磁层的钉扎磁化方向的方向上引导每个第三铁磁层的磁化方向，由此施加为了抑制巴克豪森噪声，第二铁磁层上的纵向偏压使其中的磁畴稳定。第二铁磁层的磁化方向根据外部磁场的方向保持自由旋转，从而改变传感器的电阻。

7. 发明授权

US06326092B1 Magnetoresistance device and production method thereof 失效
标题翻译：磁阻装置及其制造方法
公开(公告)号：US06326092B1
公开(公告)日：2001-12-04
申请号：US09593120
申请日：2000-06-13
申请人： Kazuaki Ikarashi , Naoya Hasegawa , Akihiro Makino
发明人： Kazuaki Ikarashi , Naoya Hasegawa , Akihiro Makino
IPC分类号： G11B566
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/3903 , G11B2005/3996 , H01F10/3268 , H01L43/12 , Y10S428/90 , Y10T428/1107 , Y10T428/1121 , Y10T428/12986
摘要： A magnetoresistance device comprising at least two ferromagnetic layers separated by a non-magnetic layer, the coercive force of one of the ferromagnetic layers being enhanced by a coercive force enhancement layer of an antiferromagnetic material disposed adjacent to the one of the ferromagnetic layer thereby pinning magnetization inversion in the one of the ferromagnetic layer, the other ferromagnetic layer serving as a free ferromagnetic layer in which magnetization inversion is allowed, wherein the spin orientation in the coercive force enhancement layer is aligned in a multilayer fashion into a direction substantially parallel to the plane of the coercive force enhancement layer. A method of producing such a device is also disclosed.
摘要翻译：磁阻器件包括由非磁性层分开的至少两个铁磁层，其中一个铁磁层的矫顽力由靠近该铁磁层之一设置的反铁磁材料的矫顽力增强层增强，由此固定磁化强度在铁磁层中的一个反转，另一个铁磁层用作其中允许磁化反转的自由铁磁层，其中矫顽力增强层中的自旋取向以多层方式对准到基本上平行于该平面的方向的矫顽力增强层。还公开了一种制造这种装置的方法。

8. 发明授权

US06210810B1 Magnetoresistance device 失效
标题翻译：磁阻装置
公开(公告)号：US06210810B1
公开(公告)日：2001-04-03
申请号：US08928765
申请日：1997-09-12
申请人： Kazuaki Ikarashi , Naoya Hasegawa , Akihiro Makino
发明人： Kazuaki Ikarashi , Naoya Hasegawa , Akihiro Makino
IPC分类号： B32B1518
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/3903 , G11B2005/3996 , H01F10/3268 , H01L43/12 , Y10S428/90 , Y10T428/1107 , Y10T428/1121 , Y10T428/12986
摘要： A magnetoresistance device comprising at least two ferromagnetic layers separated by a non-magnetic layer, the coercive force of one of the ferromagnetic layers being enhanced by a coercive force enhancement layer of an antiferromagnetic material disposed adjacent to the one of the ferromagnetic layer thereby pinning magnetization inversion in the one of the ferromagnetic layer, the other ferromagnetic layer serving as a free ferromagnetic layer in which magnetization inversion is allowed, wherein the spin orientation in the coercive force enhancement layer is aligned in a multilayer fashion into a direction substantially parallel to the plane of the coercive force enhancement layer. A method of producing such a device is also disclosed.
摘要翻译：磁阻器件包括由非磁性层分开的至少两个铁磁层，其中一个铁磁层的矫顽力由靠近该铁磁层之一设置的反铁磁材料的矫顽力增强层增强，由此固定磁化强度在铁磁层中的一个反转，另一个铁磁层用作其中允许磁化反转的自由铁磁层，其中矫顽力增强层中的自旋取向以多层方式对准到基本上平行于该平面的方向的矫顽力增强层。还公开了一种制造这种装置的方法。

9. 发明授权

US6074707A Method of producing magnetoresistive element 失效
标题翻译：制造磁阻元件的方法
公开(公告)号：US6074707A
公开(公告)日：2000-06-13
申请号：US18919
申请日：1998-02-05
申请人： Yukie Nakazawa , Masamichi Saito , Naoya Hasegawa , Akihiro Makino
发明人： Yukie Nakazawa , Masamichi Saito , Naoya Hasegawa , Akihiro Makino
IPC分类号： G01R33/09 , G11B5/39 , H01F10/00 , H01F10/08 , H01F10/32 , H01F41/32 , H01L43/12 , H01F1/00
CPC分类号： B82Y25/00 , H01F10/3268 , H01F41/32 , H01L43/12
摘要： The present invention provides a method of producing a magnetoresistive element in which a laminate including a free ferromagnetic layer in which at least magnetization is freely rotated according to an external magnetic field, a non-magnetic layer, and a pinned ferromagnetic layer in which reversal of magnetization is pinned is formed, and is heat-treated for setting different directions of the easy axis of magnetization of the free ferromagnetic layer and the pinned ferromagnetic layer under different conditions. In the heat treatment, first annealing is performed at the predetermined temperature in a magnetic field applied in a first direction, and second annealing is performed in a magnetic field applied in a second direction substantially perpendicular to the first direction so that the easy axis of magnetization of the free ferromagnetic layer is substantially perpendicular to that of the pinned ferromagnetic layer.
摘要翻译：本发明提供了一种制造磁阻元件的方法，其中包括自由铁磁层的层压体，其中至少磁化根据外部磁场自由旋转，非磁性层和固定的铁磁层，其中反转形成磁化，并对不同条件下的自由铁磁层和被固定铁磁层的易磁化轴的不同方向进行热处理。在热处理中，在施加于第一方向的磁场中，在规定温度下进行第一退火，在与第一方向大致正交的第二方向施加的磁场中进行第二退火，使得易磁化轴的自由铁磁层基本上垂直于被钉扎的铁磁层。

10. 发明授权

US5910344A Method of manufacturing a magnetoresistive sensor 失效
标题翻译：制造磁阻传感器的方法
公开(公告)号：US5910344A
公开(公告)日：1999-06-08
申请号：US175593
申请日：1998-10-20
申请人： Naoya Hasegawa , Masamichi Saito , Akihiro Makino
发明人： Naoya Hasegawa , Masamichi Saito , Akihiro Makino
IPC分类号： G01R33/09 , G11B5/012 , G11B5/31 , G11B5/39 , H01F10/32 , H01L43/08 , H01L43/10 , H01L43/12 , B29C35/08
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/3903 , H01F10/3268 , H01L43/10 , H01L43/12 , G11B2005/3996 , G11B5/012 , G11B5/3163 , G11B5/3929 , G11B5/3967
摘要： The present invention provides a magnetoresistive sensor having at least two ferromagnetic layers provided with a non-magnetic layer therebetween; a coercive force increasing layer consisting of an antiferromagnetic material and provided adjacent to one of the ferromagnetic layers, for increasing the coercive force thereof to pin magnetization reversal, the other ferromagnetic layer having free magnetization reversal; and an antiferromagnetic layer provided to adjacent to the other ferromagnetic layer having free magnetization reversal, for applying a longitudinal bias to the other ferromagnetic layer to induce magnetic anisotropy therein due to an unidirectional exchange bias magnetic field to stabilize a magnetic domain.
摘要翻译：本发明提供一种磁阻传感器，其具有至少两个在其间设置有非磁性层的铁磁层; 由反铁磁性材料构成的矫顽力增加层，并且与铁磁层之一相邻设置，用于增加其矫顽力以引起磁化反转，另一个铁磁层具有自由磁化反转; 以及反铁磁层，其设置成与具有自由磁化反转的另一个铁磁层相邻，用于由于单向交换偏置磁场而使另一个铁磁层施加纵向偏置以引起其各向异性以稳定磁畴。

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