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1. 发明授权

US06528445B1 Dielectric ceramic composition and method for manufacturing the same 失效
标题翻译：介电陶瓷组合物及其制造方法
公开(公告)号：US06528445B1
公开(公告)日：2003-03-04
申请号：US09765577
申请日：2001-01-22
申请人： Kug Sun Hong , Jung-Kun Lee , Dong-Wan Kim , Hyun-Woo Jung , Jeong-Ryeol Kim , Sang-Gu Kang , Do-Kyun Kwon
发明人： Kug Sun Hong , Jung-Kun Lee , Dong-Wan Kim , Hyun-Woo Jung , Jeong-Ryeol Kim , Sang-Gu Kang , Do-Kyun Kwon
IPC分类号： C04B35495
CPC分类号： C04B35/495 , C04B35/62695 , C04B35/6303 , C04B2235/3206 , C04B2235/3213 , C04B2235/3215 , C04B2235/3232 , C04B2235/3239 , C04B2235/3244 , C04B2235/3251 , C04B2235/3279 , C04B2235/3281 , C04B2235/3284 , C04B2235/3291 , C04B2235/3293 , C04B2235/3294 , C04B2235/3298 , C04B2235/3409 , C04B2235/3418 , C04B2235/656 , C04B2235/77 , H01G4/1254
摘要： Disclosed is a dielectric ceramic composition suitable for use in planar or multilayer type electronic parts containing inner conductors, for the fabrication of which simultaneously sintering base materials and conductors is required. This ceramic composition is composed of (1−x)Ba3Ti4Nb4O21−(x)Ba(or Sr)Nb2O6(0
摘要翻译：公开了一种适用于含有内部导体的平面或多层型电子部件的电介质陶瓷组合物，用于制造同时烧结基底材料和导体。该陶瓷组合物由（1-x）Ba3Ti4Nb4O21-（x）Ba（或Sr）Nb2O6（0

2. 发明授权

US06579518B2 Ceramic deodorizer 失效
公开(公告)号：US06579518B2
公开(公告)日：2003-06-17
申请号：US09765576
申请日：2001-01-22
申请人： Kug Sun Hong , Dong-Wan Kim , Sang-Gu Kang , Hyun-Seung Ryu , Su-Jin Kim , Dong-Ho Lee
发明人： Kug Sun Hong , Dong-Wan Kim , Sang-Gu Kang , Hyun-Seung Ryu , Su-Jin Kim , Dong-Ho Lee
IPC分类号： A61L1100
CPC分类号： A61L9/01 , B01D53/02 , Y10T442/2033
摘要： Disclosed is a deodorizer composition comprising magnesium and calcium phosphate compounds, capable of effectively removing various malodorous components from the atmosphere.

3. 发明授权

US07746719B2 Multi-chip package reducing power-up peak current 有权
标题翻译：多芯片封装降低上电峰值电流
公开(公告)号：US07746719B2
公开(公告)日：2010-06-29
申请号：US12177323
申请日：2008-07-22
申请人： Sang-Gu Kang
发明人： Sang-Gu Kang
IPC分类号： G11C17/18
CPC分类号： G11C7/20 , G11C5/147
摘要： Disclosed is a multi-chip package having a plurality of memory chips. Each memory chip includes a memory cell array storing e-fuse data, a read-out control circuit reading e-fuse data in response to a read signal, a first internal pad receiving a first control signal, a read-out controller generating the read signal to define a read period, and to generate a second control signal following the read period, and a second internal pad receiving the second control signal, wherein the plurality of memory chips is connected series and each respective read-out control circuit and read-out controller in each one of the plurality of memory chips cooperate to implement a sequential read of e-fuse data across the plurality of memory chips.
摘要翻译：公开了具有多个存储器芯片的多芯片封装。每个存储器芯片包括存储电子熔丝数据的存储单元阵列，响应于读取信号读取电子熔丝数据的读出控制电路，接收第一控制信号的第一内部焊盘，产生读取的读出控制器的读出控制器信号以定义读周期，并产生跟随读周期的第二控制信号，以及第二内部焊盘接收第二控制信号，其中多个存储器芯片连接串联，每个相应的读出控制电路和读 - 多个存储器芯片中的每一个的输出控制器协作以实现跨多个存储器芯片的电子熔丝数据的顺序读取。

4. 发明授权

US07701235B2 Substrate test probing equipment having forcing part for test head and force-receiving pattern for probe card and methods of using the same 有权
标题翻译：具有强制部分用于探针卡的测试头和受力图案的基板测试探测设备及其使用方法
公开(公告)号：US07701235B2
公开(公告)日：2010-04-20
申请号：US12098778
申请日：2008-04-07
申请人： Chang-Hyun Cho , Joon-Yeon Kim , Sang-Gu Kang , Sung-Mo Kang , Sang-Kyu Yoo
发明人： Chang-Hyun Cho , Joon-Yeon Kim , Sang-Gu Kang , Sung-Mo Kang , Sang-Kyu Yoo
IPC分类号： G01R31/02
CPC分类号： G01R31/2889 , G01R31/2891
摘要： Substrate test probing equipment having a force-receiving pattern for a probe card and a forcing part for a test head, and methods of using the same, in which with the force-receiving pattern for the probe card and the forcing part for the test head, thermal expansion and contraction of the probe card can be suppressed when the semiconductor substrate is being tested at high and low temperatures. To this end, to substrate test probing equipment having a substrate mover, a probe card, and a test head is prepared, in which the test head has a forcing part and the probe card has a force-receiving plate. A semiconductor substrate is placed on the substrate mover to be electrically connected with the probe card. The semiconductor substrate is electrically tested by the probe card and the test head. When the semiconductor substrate is being tested, the forcing part of the test head is brought into contact with the force-receiving pattern of the probe card.
摘要翻译：具有用于探针卡的力接收图案和用于测试头的强制部件的基板测试探测设备及其使用方法，其中用于探针卡的受力图案和用于测试头的强制部件当在高温和低温下测试半导体衬底时，可以抑制探针卡的热膨胀和收缩。为此，制备具有基板移动器，探针卡和测试头的基板测试探测设备，其中测试头具有强制部分，探针卡具有受力板。将半导体衬底放置在衬底移动器上以与探针卡电连接。半导体衬底由探针卡和测试头电测试。当半导体衬底被测试时，测试头的强制部分与探针卡的受力图案接触。

5. 发明授权

US07561467B2 Flash memory device using program data cache and programming method thereof 有权
标题翻译：闪存设备使用程序数据缓存及其编程方法
公开(公告)号：US07561467B2
公开(公告)日：2009-07-14
申请号：US11657697
申请日：2007-01-25
申请人： Dong-Ku Kang , Young-Ho Lim , Sang-Gu Kang
发明人： Dong-Ku Kang , Young-Ho Lim , Sang-Gu Kang
IPC分类号： G11C11/34
CPC分类号： G11C16/3454 , G11C11/5628 , G11C2211/5621 , G11C2211/5642 , G11C2211/5643
摘要： A method is for programming a flash memory device which includes a plurality of memory cells storing multi-bit data representing one of a plurality of states. The method includes programming the multi-bit data into selected memory cells of the plurality of memory cells, the programming including a first verify-reading operation performed by a first verifying voltage, determining whether to execute a reprogramming operation for each of the selected memory cells, and reprogramming the selected memory cells in accordance with the determination. The reprogramming of the selected memory cells includes a second verify-reading operation performed by a second verifying voltage, the second verifying voltage being higher than the first verifying voltage.
摘要翻译：一种用于对闪速存储器件进行编程的方法，该闪存器件包括存储表示多种状态之一的多位数据的多个存储器单元。该方法包括将多位数据编程到多个存储单元的选定存储单元中，该程序包括由第一验证电压执行的第一验证读取操作，确定是否对所选存储单元中的每一个执行重编程操作，并且根据该确定重新编程所选择的存储单元。所选择的存储单元的重新编程包括由第二验证电压执行的第二验证读取操作，第二验证电压高于第一验证电压。

6. 发明申请

US20080068883A1 Flash memory devices and programming methods for the same 有权
标题翻译：闪存设备和编程方法相同
公开(公告)号：US20080068883A1
公开(公告)日：2008-03-20
申请号：US11651521
申请日：2007-01-10
申请人： Sang-Gu Kang , Young-Ho Lim
发明人： Sang-Gu Kang , Young-Ho Lim
IPC分类号： G11C16/04
CPC分类号： G11C11/5628
摘要： Flash memory devices and methods of programming the same are provided. The flash memory devices include a plurality of memory cells storing multi-bit data representing at least one of first through fourth states and including most significant bits and least significant bits. The method includes programming the plural memory cells into a provisional state according to the least significant bit, and programming the plurality of memory cells into the second through fourth states from the first and provisional states according to the most significant bit. Programming the plurality of memory cells into the second through fourth states includes simultaneously programming the plurality of memory cells at least partially into at least two states during one programming operation period.
摘要翻译：提供闪存设备及其编程方法。闪速存储器件包括存储多位数据的多个存储单元，该多位数据表示第一至第四状态中的至少一个，并且包括最高有效位和最低有效位。该方法包括根据最低有效位将多个存储器单元编程为临时状态，并根据最高有效位将第一至暂态状态的多个存储单元编程为第二至第四状态。将多个存储器单元编程为第二至第四状态包括在一个编程操作周期期间至少部分地将多个存储器单元编程为至少两个状态。

7. 发明授权

US08154929B2 Flash memory device controlling common source line voltage, program-verify method, and memory system 有权
标题翻译：控制公共源极线电压的闪存器件，程序验证方法和存储器系统
公开(公告)号：US08154929B2
公开(公告)日：2012-04-10
申请号：US12481630
申请日：2009-06-10
申请人： Sang-Gu Kang
发明人： Sang-Gu Kang
IPC分类号： G11C11/34
CPC分类号： G11C7/02 , G11C11/5628 , G11C16/0483 , G11C2211/5621 , G11C2211/5642
摘要： Disclosed is a flash memory device and a program-verify method. The flash memory device includes; a plurality of memory cells connected between a bit line and a common source line, and a data input/output circuit connected to the bit line and configured to store program data for a selected one of the plurality memory cells. The data input/output circuit maintains the program data during a program-verify operation and controls a voltage level on the bit line in accordance with the program data.
摘要翻译：公开了一种闪存装置和程序验证方法。闪存装置包括：连接在位线和公共源极线之间的多个存储单元，以及数据输入/输出电路，连接到所述位线并且被配置为存储所述多个存储单元中所选择的一个的程序数据。数据输入/输出电路在程序验证操作期间保持程序数据，并根据程序数据控制位线上的电压电平。

8. 发明申请

US20100220535A1 NON-VOLATILE MEMORY DEVICE 失效
标题翻译：非易失性存储器件
公开(公告)号：US20100220535A1
公开(公告)日：2010-09-02
申请号：US12713219
申请日：2010-02-26
申请人： Sang-Gu Kang , Hee-Won Lee , Ju-Seok Lee , Jung-Ho Song
发明人： Sang-Gu Kang , Hee-Won Lee , Ju-Seok Lee , Jung-Ho Song
IPC分类号： G11C5/14 , G11C7/00
CPC分类号： G11C7/12 , G11C5/147 , G11C16/24 , G11C2207/005
摘要： A non-volatile memory device includes a feedback circuit and a precharge switching transistor. The feedback circuit generates a feedback signal based on a voltage level of a bitline during a precharge operation. The precharge switching transistor, in response to the feedback signal, controls a precharge current for precharging the bitline. The speed of the precharge operation may be increased and/or mismatch of the bias signals in precharging a plurality of bitlines may be reduced.
摘要翻译：非易失性存储器件包括反馈电路和预充电开关晶体管。反馈电路在预充电操作期间基于位线的电压电平产生反馈信号。响应于反馈信号，预充电开关晶体管控制用于预充电位线的预充电电流。可以增加预充电操作的速度和/或可以减少对多个位线进行预充电的偏置信号的失配。

9. 发明申请

US20090180317A1 FLASH MEMORY DEVICE INCLUDING A DUMMY CELL 有权
标题翻译：包含DUMMY细胞的闪存存储器件
公开(公告)号：US20090180317A1
公开(公告)日：2009-07-16
申请号：US12416477
申请日：2009-04-01
申请人： Hee-Soo Kang , Dong-Uk Choi , Choong-Ho Lee , Sang-Gu Kang
发明人： Hee-Soo Kang , Dong-Uk Choi , Choong-Ho Lee , Sang-Gu Kang
IPC分类号： G11C16/06
CPC分类号： G11C11/5628 , G11C16/0483
摘要： A non-volatile memory device includes a selection transistor coupled to a bit line. The device also includes a plurality of memory cells serially coupled to the selection transistor and at least one dummy cell located between the plurality of memory cells. The dummy cell is turned off during a programming operation of a memory cell located between the dummy cell and the selection transistor.
摘要翻译：非挥发性存储器件包括耦合到位线的选择晶体管。该装置还包括串联耦合到选择晶体管的多个存储单元和位于多个存储单元之间的至少一个虚拟单元。在位于虚设单元和选择晶体管之间的存储单元的编程操作期间，虚设单元关闭。

10. 发明授权

US08243530B2 Non-volatile memory device 失效
标题翻译：非易失性存储器件
公开(公告)号：US08243530B2
公开(公告)日：2012-08-14
申请号：US12713219
申请日：2010-02-26
申请人： Sang-Gu Kang , Hee-Won Lee , Ju-Seok Lee , Jung-Ho Song
发明人： Sang-Gu Kang , Hee-Won Lee , Ju-Seok Lee , Jung-Ho Song
IPC分类号： G11C5/14 , G11C7/00
CPC分类号： G11C7/12 , G11C5/147 , G11C16/24 , G11C2207/005
摘要： A non-volatile memory device includes a feedback circuit and a precharge switching transistor. The feedback circuit generates a feedback signal based on a voltage level of a bitline during a precharge operation. The precharge switching transistor, in response to the feedback signal, controls a precharge current for precharging the bitline. The speed of the precharge operation may be increased and/or mismatch of the bias signals in precharging a plurality of bitlines may be reduced.
摘要翻译：非易失性存储器件包括反馈电路和预充电开关晶体管。反馈电路在预充电操作期间基于位线的电压电平产生反馈信号。响应于反馈信号，预充电开关晶体管控制用于预充电位线的预充电电流。可以增加预充电操作的速度和/或可以减少对多个位线进行预充电的偏置信号的失配。

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