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1. 发明授权

US07057676B2 Thin-film transistor liquid crystal display substrate 有权
标题翻译：薄膜晶体管液晶显示基板
公开(公告)号：US07057676B2
公开(公告)日：2006-06-06
申请号：US10800592
申请日：2004-03-15
申请人： Kuang-Chao Yeh , Kun-Hong Chen
发明人： Kuang-Chao Yeh , Kun-Hong Chen
IPC分类号： G02F1/136
CPC分类号： G02F1/136227 , H01L27/12 , H01L27/1244 , H01L27/1248
摘要： A thin-film transistor liquid crystal display (TFT-LCD) substrate mainly includes a substrate and a planarization layer thereon. The substrate is defined to form a thin-film transistor (TFT) and a contact plug thereon and the source/drain of the TFT is electrically coupled with the contact plug. The planarization layer is disposed on the substrate and the planarization layer has a via hole for penetrating the planarization layer to expose to the contact plug. The configuration of the cross-section of the via hole includes a straight edge so that the via hole is able to be formed with a less steep taper at a lateral view by reflow.
摘要翻译：薄膜晶体管液晶显示器（TFT-LCD）基板主要包括基板和平坦化层。衬底限定为在其上形成薄膜晶体管（TFT）和接触插头，并且TFT的源极/漏极与接触插塞电耦合。平坦化层设置在基板上，平坦化层具有用于穿透平坦化层以暴露于接触插塞的通孔。通孔的横截面的构造包括直边缘，使得通孔能够通过回流在侧视图中形成具有较不陡峭的锥度。

2. 发明申请

US20050036092A1 Thin-film transistor liquid crystal display substrate 有权
标题翻译：薄膜晶体管液晶显示基板
公开(公告)号：US20050036092A1
公开(公告)日：2005-02-17
申请号：US10800592
申请日：2004-03-15
申请人： Kuang-Chao Yeh , Kun-Hong Chen
发明人： Kuang-Chao Yeh , Kun-Hong Chen
IPC分类号： G02F1/1362 , H01L21/77 , H01L21/84 , H01L27/12 , G02F1/1343
CPC分类号： G02F1/136227 , H01L27/12 , H01L27/1244 , H01L27/1248
摘要： A thin-film transistor liquid crystal display (TFT-LCD) substrate mainly includes a substrate and a planarization layer thereon. The substrate is defined to form a thin-film transistor (TFT) and a contact plug thereon and the source/drain of the TFT is electrically coupled with the contact plug. The planarization layer is disposed on the substrate and the planarization layer has a via hole for penetrating the planarization layer to expose to the contact plug. The configuration of the cross-section of the via hole includes a straight edge so that the via hole is able to be formed with a less steep taper at a lateral view by reflow.
摘要翻译：薄膜晶体管液晶显示器（TFT-LCD）基板主要包括基板和平坦化层。衬底限定为在其上形成薄膜晶体管（TFT）和接触插头，并且TFT的源极/漏极与接触插塞电耦合。平坦化层设置在基板上，平坦化层具有用于穿透平坦化层以暴露于接触插塞的通孔。通孔的横截面的构造包括直边缘，使得通孔能够通过回流在侧视图中形成具有较不陡峭的锥度。

3. 发明申请

US20090061570A1 SEMICONDUCTOR DEVICE AND LTPS-TFT WITHIN AND METHOD OF MAKING THE SAME 有权
标题翻译：半导体器件和LTPS-TFT及其制造方法
公开(公告)号：US20090061570A1
公开(公告)日：2009-03-05
申请号：US12261816
申请日：2008-10-30
申请人： Kuang-Chao Yeh , Wen-Bin Hsu
发明人： Kuang-Chao Yeh , Wen-Bin Hsu
IPC分类号： H01L21/336
CPC分类号： H01L29/66757 , H01L29/4908
摘要： A thin film transistor (TFT) formed on a substrate includes a polycrystalline film, a gate insulator, a hydrogen-supplying film and a gate electrode. The polycrystalline film is formed on the substrate. Two sides of the polycrystalline film serve as the source and the drain of the semiconductor device, and the central region of the polycrystalline layer serves as the channel. The gate insulator is formed on the polycrystalline film, then the polycrystalline film is ions implanted, and the hydrogen-supplying film is formed on the gate insulator. The gate electrode is formed on the hydrogen-supplying film above the channel. The hydrogen-supplying film supplies hydrogen to the polycrystalline film, especially to the channel, so as to transform the unsaturated bonds into hydrogen bonds in the channel for avoiding the unsaturated bonds to degrade the charge carrier efficiency of the channel.
摘要翻译：形成在基板上的薄膜晶体管（TFT）包括多晶膜，栅极绝缘体，供氢膜和栅电极。在基板上形成多晶膜。多晶膜的两侧用作半导体器件的源极和漏极，并且多晶层的中心区域用作沟道。栅极绝缘体形成在多晶膜上，然后多晶膜被注入离子，并且在栅极绝缘体上形成供氢膜。栅电极形成在通道上方的供氢膜上。氢供应膜向多晶膜，特别是通道提供氢，以将不饱和键转化为通道中的氢键，以避免不饱和键降低通道的载流子效率。

4. 发明授权

US08153495B2 Semiconductor device and LTPS-TFT within and method of making the same 有权
标题翻译：半导体器件和LTPS-TFT以及其制造方法
公开(公告)号：US08153495B2
公开(公告)日：2012-04-10
申请号：US12261816
申请日：2008-10-30
申请人： Kuang-Chao Yeh , Wen-Bin Hsu
发明人： Kuang-Chao Yeh , Wen-Bin Hsu
IPC分类号： H01L21/331
CPC分类号： H01L29/66757 , H01L29/4908
摘要： A thin film transistor (TFT) formed on a substrate includes a polycrystalline film, a gate insulator, a hydrogen-supplying film and a gate electrode. The polycrystalline film is formed on the substrate. Two sides of the polycrystalline film serve as the source and the drain of the semiconductor device, and the central region of the polycrystalline layer serves as the channel. The gate insulator is formed on the polycrystalline film, then the polycrystalline film is ions implanted, and the hydrogen-supplying film is formed on the gate insulator. The gate electrode is formed on the hydrogen-supplying film above the channel. The hydrogen-supplying film supplies hydrogen to the polycrystalline film, especially to the channel, so as to transform the unsaturated bonds into hydrogen bonds in the channel for avoiding the unsaturated bonds to degrade the charge carrier efficiency of the channel.
摘要翻译：形成在基板上的薄膜晶体管（TFT）包括多晶膜，栅极绝缘体，供氢膜和栅电极。在基板上形成多晶膜。多晶膜的两侧用作半导体器件的源极和漏极，并且多晶层的中心区域用作沟道。栅极绝缘体形成在多晶膜上，然后多晶膜被注入离子，并且在栅极绝缘体上形成供氢膜。栅电极形成在通道上方的供氢膜上。氢供应膜向多晶膜，特别是通道提供氢，以将不饱和键转化为通道中的氢键，以避免不饱和键降低通道的载流子效率。

5. 发明申请

US20100073943A1 Outdoor Light-Emitting Diode Light Fixture and Lamp Casing Device Thereof 审中-公开
标题翻译：户外发光二极管灯具及灯具套管装置
公开(公告)号：US20100073943A1
公开(公告)日：2010-03-25
申请号：US12234645
申请日：2008-09-20
申请人： Kuang-Chao Yeh , Cheng-Chieh Huang
发明人： Kuang-Chao Yeh , Cheng-Chieh Huang
IPC分类号： F21V29/00
CPC分类号： F21V29/506 , F21S8/086 , F21V15/01 , F21V29/15 , F21V29/74 , F21W2131/10 , F21Y2105/10 , F21Y2115/10
摘要： A lamp housing device for an outdoor light-emitting diode light fixture having high heat dissipation capability, which includes an upper casing, a cover body and a sunshade, wherein the cover body has light transmittance, and forms a holding chamber able to retain a light-emitting diode lamp set by pairing with the upper casing. The sunshade is located atop the outer surface of upper casing, and includes a plate and a plurality of fixing members. The fixing members are connected between the plate and the upper casing, thereby providing a spacing distance between the plate and the upper casing. Accordingly, the sunshade is able to reduce the ambient temperature of the light-emitting diodes during the daytime, and increase the rate of heat dissipation of light-emitting diodes when used at night.
摘要翻译：一种具有高散热能力的室外发光二极管灯具的灯壳体装置，其包括上壳体，盖体和遮阳罩，其中盖体具有透光性，并且形成能够保持光的保持室 - 通过与上壳体配对来设置二极管灯。遮阳板位于上壳体的外表面的顶部，并且包括板和多个固定构件。固定构件连接在板和上壳体之间，从而在板和上壳体之间提供间隔距离。因此，遮阳能够在白天降低发光二极管的环境温度，并且在夜间使用时增加发光二极管的散热率。

6. 发明授权

US07112820B2 Stacked capacitor having parallel interdigitized structure for use in thin film transistor liquid crystal display 有权
标题翻译：具有平行叉指结构的叠层电容器用于薄膜晶体管液晶显示器
公开(公告)号：US07112820B2
公开(公告)日：2006-09-26
申请号：US10605015
申请日：2003-09-01
申请人： Chih-Chin Chang , Kuang-Chao Yeh
发明人： Chih-Chin Chang , Kuang-Chao Yeh
IPC分类号： G02F1/136
CPC分类号： G02F1/136213 , H01L27/12
摘要： A capacitor structure includes a first conductive layer, a first insulating layer disposed on a substrate in sequence, a second conductive layer disposed on portions of the first insulating layer, a second insulating layer disposed on the second conductive layer and the first insulating layer, a third conductive layer disposed on portions of the second insulating layer, a third insulating layer disposed on the third conductive layer and the second insulating layer, and a fourth conductive layer disposed on the third insulating layer. The third conductive layer and the fourth conductive layer are electrically connected to the first conductive layer and the second conductive layer through at least one first contact hole adjacent to the second conductive layer and at least one second contact hole, respectively.
摘要翻译：电容器结构包括第一导电层，依次设置在基板上的第一绝缘层，设置在第一绝缘层的部分上的第二导电层，设置在第二导电层和第一绝缘层上的第二绝缘层，设置在第二绝缘层的部分上的第三导电层，设置在第三导电层和第二绝缘层上的第三绝缘层，以及设置在第三绝缘层上的第四导电层。第三导电层和第四导电层通过分别与第二导电层相邻的至少一个第一接触孔和至少一个第二接触孔电连接到第一导电层和第二导电层。

7. 发明申请

US20060006387A1 Semiconductor device and LTPS-TFT within and method of making the same 审中-公开
标题翻译：半导体器件和LTPS-TFT以及其制造方法
公开(公告)号：US20060006387A1
公开(公告)日：2006-01-12
申请号：US11120966
申请日：2005-05-04
申请人： Kuang-Chao Yeh , Wen-Bin Hsu
发明人： Kuang-Chao Yeh , Wen-Bin Hsu
IPC分类号： H01L29/10
CPC分类号： H01L29/66757 , H01L29/4908
摘要： A thin film transistor (TFT) formed on a substrate includes a polycrystalline film, a gate insulator, a hydrogen-supplying film and a gate electrode. The polycrystalline film is formed on the substrate. Two sides of the polycrystalline film serve as the source and the drain of the semiconductor device, and the central region of the polycrystalline layer serves as the channel. The gate insulator is formed on the polycrystalline film, and the hydrogen-supplying film is formed on the gate insulator. The gate electrode is formed on the hydrogen-supplying film above the channel. The hydrogen-supplying film supplies hydrogen to the polycrystalline film, especially to the channel, so as to transform the unsaturated bonds into hydrogen bonds in the channel for avoiding the unsaturated bonds to degrade the charge carrier efficiency of the channel.
摘要翻译：形成在基板上的薄膜晶体管（TFT）包括多晶膜，栅极绝缘体，供氢膜和栅电极。在基板上形成多晶膜。多晶膜的两侧用作半导体器件的源极和漏极，并且多晶层的中心区域用作沟道。栅极绝缘体形成在多晶膜上，并且在栅极绝缘体上形成供氢膜。栅电极形成在通道上方的供氢膜上。氢供应膜向多晶膜，特别是通道提供氢，以将不饱和键转化为通道中的氢键，以避免不饱和键降低通道的载流子效率。

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