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1. 发明申请

US20130328778A1 METHOD OF SIMULATING THE TOUCH SCREEN OPERATION BY MEANS OF A MOUSE 审中-公开
标题翻译：通过鼠标模拟触摸屏操作的方法
公开(公告)号：US20130328778A1
公开(公告)日：2013-12-12
申请号：US13567859
申请日：2012-08-06
申请人： Kuan-Ting CHEN , Shih-Ming Chang , Li-Chieh Wang
发明人： Kuan-Ting CHEN , Shih-Ming Chang , Li-Chieh Wang
IPC分类号： G06F3/033
CPC分类号： G06F3/038 , G06F3/03543 , G06F3/0488
摘要： A method of simulating the touch screen operation by means of a mouse is provided and particularly makes the mouse work in a computer operating system with a screen touch function. The mouse comprises at least one simulation touch trigger button and one touch signal converter unit. Press the simulation touch trigger button, and the mouse will work in the touch mode. The touch signal converter unit intercepts a pressed button signal of the mouse and converts it into a screen touch signal for executing single-finger or multi-finger slide and touch functions. The mouse is further provided with a fixed-point button, and when the fixed-point button is pressed, where the mouse is corresponding to the screen, a finger press is simulated. The pressed position is fixed and does not move, and another button of the mouse is pressed to operate for executing the screen zoom-in, zoom-out, and rotation.
摘要翻译：提供了通过鼠标模拟触摸屏操作的方法，并且特别地使鼠标在具有屏幕触摸功能的计算机操作系统中工作。鼠标包括至少一个模拟触摸触发按钮和一个触摸信号转换器单元。按模拟触摸触发按钮，鼠标将在触摸模式下工作。触摸信号转换器单元拦截鼠标的按下按钮信号，并将其转换成用于执行单指或多指幻灯片和触摸功能的屏幕触摸信号。鼠标进一步设置有定点按钮，当按住定点按钮时，鼠标对应于屏幕，则模拟手指按压。按下的位置是固定的，不移动，按下鼠标的另一个按钮来操作以执行屏幕放大，缩小和旋转。

2. 发明授权

US09627310B2 Semiconductor device with self-aligned interconnects 有权
公开(公告)号：US09627310B2
公开(公告)日：2017-04-18
申请号：US13444648
申请日：2012-04-11
申请人： Shih-Ming Chang , Ken-Hsien Hsieh , Tsong-Hua Ou , Ru-Gun Liu , Fang-Yu Fan , Yuan-Te Hou
发明人： Shih-Ming Chang , Ken-Hsien Hsieh , Tsong-Hua Ou , Ru-Gun Liu , Fang-Yu Fan , Yuan-Te Hou
IPC分类号： H01L23/528 , H01L23/522 , H01L21/768 , H01L21/311 , H01L23/532
CPC分类号： H01L23/522 , H01L21/31144 , H01L21/76816 , H01L23/528 , H01L23/5329 , H01L2924/0002 , H01L2924/00
摘要： A multilayer device and method for fabricating a multilayer device is disclosed. An exemplary multilayer device includes a substrate, a first interlayer dielectric (ILD) layer disposed over the substrate, and a first conductive layer including a first plurality of conductive lines formed in the first ILD layer. The device further includes a second ILD layer disposed over the first ILD layer, and a second conductive layer including a second plurality of conductive lines formed in the second ILD layer. At least one conductive line of the second plurality of conductive lines is formed adjacent to at least one conductive line of the first plurality of conductive lines. The at least one conductive line of the second plurality of conductive lines contacts the at least one conductive line of the first plurality of conductive lines at an interface.

3. 发明申请

US20130270704A1 Semiconductor Device with Self-Aligned Interconnects 有权
标题翻译：具有自对准互连的半导体器件
公开(公告)号：US20130270704A1
公开(公告)日：2013-10-17
申请号：US13444648
申请日：2012-04-11
申请人： Shih-Ming Chang , Ken-Hsien Hsieh , Tsong-Hua Ou , Ru-Gun Liu , Fang-Yu Fan , Yuan-Te Hou
发明人： Shih-Ming Chang , Ken-Hsien Hsieh , Tsong-Hua Ou , Ru-Gun Liu , Fang-Yu Fan , Yuan-Te Hou
IPC分类号： H01L23/482 , H01L21/768
CPC分类号： H01L23/522 , H01L21/31144 , H01L21/76816 , H01L23/528 , H01L23/5329 , H01L2924/0002 , H01L2924/00
摘要： A multilayer device and method for fabricating a multilayer device is disclosed. An exemplary multilayer device includes a substrate, a first interlayer dielectric (ILD) layer disposed over the substrate, and a first conductive layer including a first plurality of conductive lines formed in the first ILD layer. The device further includes a second ILD layer disposed over the first ILD layer, and a second conductive layer including a second plurality of conductive lines formed in the second ILD layer. At least one conductive line of the second plurality of conductive lines is formed adjacent to at least one conductive line of the first plurality of conductive lines. The at least one conductive line of the second plurality of conductive lines contacts the at least one conductive line of the first plurality of conductive lines at an interface.
摘要翻译：公开了一种用于制造多层器件的多层器件和方法。示例性的多层器件包括衬底，设置在衬底上的第一层间电介质层（ILD）层，以及包括形成在第一ILD层中的第一多个导电线的第一导电层。该装置还包括设置在第一ILD层上的第二ILD层和包括形成在第二ILD层中的第二多个导电线的第二导电层。所述第二多个导电线中的至少一个导电线邻近所述第一多个导线的至少一个导电线形成。第二多个导电线中的至少一个导线在接口处接触第一多个导线的至少一个导电线。

4. 发明申请

US20130014897A1 Apparatus And Method For Controlling Relative Particle Concentrations In A Plasma 有权
标题翻译：用于控制等离子体中相对粒子浓度的装置和方法
公开(公告)号：US20130014897A1
公开(公告)日：2013-01-17
申请号：US13624678
申请日：2012-09-21
申请人： Shih-Ming Chang , Chi-Lun Lu
发明人： Shih-Ming Chang , Chi-Lun Lu
IPC分类号： H01L21/3065
CPC分类号： H01J37/32697 , H01J37/32623
摘要： An apparatus for controlling a plasma etching process includes plasma control structure that can vary a size of a plasma flow passage, vary a speed of plasma flowing through the plasma flow passage, vary plasma concentration flowing through the plasma flow passage, or a combination thereof.
摘要翻译：用于控制等离子体蚀刻工艺的装置包括等离子体控制结构，其可以改变等离子体流动通道的尺寸，改变等离子体流过等离子体流动通道的速度，改变流过等离子体流动通道的等离子体浓度，或其组合。

5. 发明授权

US07717063B2 Spreading device for feedstuff 有权
标题翻译：饲料扩散装置
公开(公告)号：US07717063B2
公开(公告)日：2010-05-18
申请号：US12040928
申请日：2008-03-03
申请人： Shih-Ming Chang , Jin-Jun Cao
发明人： Shih-Ming Chang , Jin-Jun Cao
IPC分类号： A01K5/00
CPC分类号： A01K5/0225 , A01K39/012 , A01K39/014
摘要： A tank of the spreading device is rotated by a driving device. The tank contains a number of side boards, each of which is composed of a static plate and a door plate hinged to the static plate. The hinge joining the door and static plates has an elastic element preventing the door plate from being opened outward. When the tank is rotated at a high speed, a centrifugal force on the feedstuff inside the tank is strong enough to push the door plates open and the feedstuff is thereby automatically cast out. By varying the speed of the tank's rotation, the feedstuff could be cast for various distances, thereby achieving efficient and effective distribution of the feedstuff.
摘要翻译：扩散装置的罐由驱动装置旋转。该箱包含多个侧板，每个侧板由静止板和铰接到静态板的门板组成。连接门和静电板的铰链具有防止门板向外打开的弹性元件。当油箱高速旋转时，罐内的进料上的离心力足够强，可以将门板打开，从而自动抛出饲料。通过改变罐的旋转速度，饲料可以铸造各种距离，从而实现饲料的有效和有效的分配。

6. 发明申请

US20070250805A1 System and method for examining mask pattern fidelity 有权
标题翻译：用于检查掩模图案保真度的系统和方法
公开(公告)号：US20070250805A1
公开(公告)日：2007-10-25
申请号：US11786978
申请日：2007-04-13
申请人： Wen-Chuan Wang , Shih-Ming Chang , Chih-Cheng Chin , Chi-Lun Lu , Sheng-Chi Chin , Hung-Chang Hsieh
发明人： Wen-Chuan Wang , Shih-Ming Chang , Chih-Cheng Chin , Chi-Lun Lu , Sheng-Chi Chin , Hung-Chang Hsieh
IPC分类号： G06F17/50
CPC分类号： G03F1/36 , G03F1/84
摘要： A method and system is disclosed for examining mask pattern fidelity. A mask picture is generated from a first mask with a first OPC model applied to a mask design. The mask picture is converted into a mask based simulation file. A first simulation is conducted under a first set of predetermined lithography processing conditions using the converted simulation file to generate one or more files of a first set representing wafer photo resist profile thereof. The first OPC model is applied to the mask design in the database mask file. A second simulation is conducted under the first set of predetermined lithography processing conditions using the OPCed mask design to generate one or more files of a second set representing wafer photo resist profile thereof. The first and second sets of files are evaluated for inspecting mask fidelity.
摘要翻译：公开了一种用于检查掩模图案保真度的方法和系统。从第一个掩模生成一个掩模图片，第一个OPC模型应用于掩模设计。掩模图片被转换为基于掩码的模拟文件。使用转换的仿真文件在第一组预定光刻处理条件下进行第一模拟，以生成表示其晶片抗蚀剂轮廓的第一组的一个或多个文件。第一个OPC模型应用于数据库掩码文件中的掩码设计。在第一组预定的光刻处理条件下，使用OPCed掩模设计来进行第二次仿真以产生表示其晶片抗蚀剂轮廓的第二组的一个或多个文件。评估第一组和第二组文件以检查屏幕保真度。

7. 发明申请

US20050031966A1 Method to improve photomask critical dimension uniformity and photomask fabrication process 失效
标题翻译：提高光掩模临界尺寸均匀性和光掩模制造工艺的方法
公开(公告)号：US20050031966A1
公开(公告)日：2005-02-10
申请号：US10637347
申请日：2003-08-08
申请人： Wen-Chuan Wang , Shih-Ming Chang , Chih-Chen Chin , Chi-Lun Lu , Sheng-Chi Chin , Hung-Chang Hsieh
发明人： Wen-Chuan Wang , Shih-Ming Chang , Chih-Chen Chin , Chi-Lun Lu , Sheng-Chi Chin , Hung-Chang Hsieh
IPC分类号： G03C5/00 , G03F1/14 , G03F7/00 , G03F9/00
CPC分类号： G03F1/76 , G03F7/0035
摘要： A method of fabricating a photomask having improved critical dimension (CD) uniformity that meets or exceeds 90 nanometer technology requirements. The method includes the steps of: providing a transparent substrate covered with a layer of opaque material and a layer of photoresist; patterning the layer of photoresist to expose an area of the layer of opaque material that has a shape that follows a contour of a main pattern area to be defined by the layer of opaque material; removing the exposed area to define the layer of opaque material into the main pattern area and an area that surrounds the main pattern area; removing the patterned layer of photoresist; and removing the surrounding area of the layer of opaque material.
摘要翻译：制造具有满足或超过90纳米技术要求的改进的临界尺寸（CD）均匀性的光掩模的方法。该方法包括以下步骤：提供用不透明材料层和光致抗蚀剂层覆盖的透明基板; 图案化光致抗蚀剂层以暴露不透明材料层的区域，其具有跟随由不透明材料层限定的主图案区域的轮廓的形状; 去除暴露区域以将不透明材料层定义到主图案区域中并且围绕主图案区域的区域; 去除图案化的光刻胶层; 并去除不透明材料层的周围区域。

8. 发明授权

US06245656B1 Method for producing multi-level contacts 有权
标题翻译：多级触点的制作方法
公开(公告)号：US06245656B1
公开(公告)日：2001-06-12
申请号：US09435512
申请日：1999-11-08
申请人： Bi-Ling Chen , Erik S. Jeng , Shih-Ming Chang
发明人： Bi-Ling Chen , Erik S. Jeng , Shih-Ming Chang
IPC分类号： H01L214763
CPC分类号： H01L21/76816 , H01L21/31116 , H01L21/31138 , H01L21/31144 , Y10S438/952
摘要： The present invention relates to a method for overcming problems of amplified exposure light interference from shrinked devices and difficulties of photolithographic and etching process control due to multi-level contacts. The present invention combines reflective lights from multiple levels into one single light and reduces interference of reflective lights by introducing a reflective coating and an anti-reflective coating of SiON/Ti or SiON/TiN/Ti which further serve as an etching hard mask for avoiding overetching. The process windows are expanded. Semiconductor devices can be further shrunk and production yields an be improved.
摘要翻译：本发明涉及一种用于过滤来自收缩装置的放大的曝光光干涉的问题的方法以及由于多层接触导致的光刻和蚀刻工艺控制的困难。本发明将来自多层的反射光组合成一个单一的光，并通过引入SiON / Ti或SiON / TiN / Ti的反射涂层和抗反射涂层来减少反射光的干扰，SiON / Ti或SiON / TiN / Ti进一步用作蚀刻硬掩模以避免过蚀刻进程窗口展开。半导体器件可以进一步收缩并且产量得到改善。

9. 发明申请

US20130292836A1 VIA-FREE INTERCONNECT STRUCTURE WITH SELF-ALIGNED METAL LINE INTERCONNECTIONS 有权
标题翻译：具有自对准金属线互连的无障碍互连结构
公开(公告)号：US20130292836A1
公开(公告)日：2013-11-07
申请号：US13461224
申请日：2012-05-01
申请人： Yu-Po Tang , Shih-Ming Chang , Ken-Hsien Hsieh , Ru-Gun Liu
发明人： Yu-Po Tang , Shih-Ming Chang , Ken-Hsien Hsieh , Ru-Gun Liu
IPC分类号： H01L23/48 , H01L21/28
CPC分类号： H01L21/76838 , H01L21/76897 , H01L23/522 , H01L23/5221 , H01L2924/0002 , H01L2924/00
摘要： The present disclosure provides a semiconductor device. The semiconductor device includes a first conductive line disposed over a substrate. The first conductive line is located in a first interconnect layer and extends along a first direction. The semiconductor device includes a second conductive line and a third conductive line each extending along a second direction different from the first direction. The second and third conductive lines are located in a second interconnect layer that is different from the first interconnect layer. The second and third conductive lines are separated by a gap that is located over or below the first conductive line. The semiconductor device includes a fourth conductive line electrically coupling the second and third conductive lines together. The fourth conductive line is located in a third interconnect layer that is different from the first interconnect layer and the second interconnect layer.
摘要翻译：本发明提供一种半导体器件。半导体器件包括设置在衬底上的第一导电线。第一导线位于第一互连层中并沿着第一方向延伸。半导体器件包括沿着与第一方向不同的第二方向延伸的第二导线和第三导线。第二和第三导线位于与第一互连层不同的第二互连层中。第二和第三导线被位于第一导电线之上或之下的间隙分开。半导体器件包括将第二和第三导线电耦合在一起的第四导线。第四导线位于与第一互连层和第二互连层不同的第三互连层中。

10. 发明授权

US08178280B2 Self-contained proximity effect correction inspiration for advanced lithography (special) 有权
标题翻译：独立的接近效应校正灵感，用于高级光刻（特殊）
公开(公告)号：US08178280B2
公开(公告)日：2012-05-15
申请号：US12700880
申请日：2010-02-05
申请人： Shih-Ming Chang , Shy-Jay Lin
发明人： Shih-Ming Chang , Shy-Jay Lin
IPC分类号： G03C5/00
CPC分类号： G03F1/78 , H01J37/3174 , H01J2237/31771 , H01J2237/31772 , Y10S430/143
摘要： A lithography method is disclosed. An exemplary lithography method includes providing an energy sensitive resist material on a substrate; providing a desired pattern; performing a lithography process on the substrate, wherein the lithography process includes exposing the energy sensitive resist material to a charged particle beam, such that the desired pattern is transferred to the energy sensitive resist material; and directing the charged particle beam from an off state to a defocus state, wherein the defocus state compensates for the backscattered energy, thereby reducing proximity effects.
摘要翻译：公开了一种光刻方法。示例性的光刻方法包括在基底上提供能量敏感的抗蚀剂材料; 提供期望的图案; 在所述基板上执行光刻工艺，其中所述光刻工艺包括将所述能量敏感抗蚀剂材料暴露于带电粒子束，使得所需图案转移到所述能量敏感抗蚀剂材料; 并且将带电粒子束从断开状态引导到散焦状态，其中散焦状态补偿反向散射能量，从而减少邻近效应。

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