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    • 6. 发明授权
    • Method for manufacturing NAND flash memory
    • 制造NAND闪存的方法
    • US07592036B2
    • 2009-09-22
    • US11435459
    • 2006-05-16
    • Kuei-Yun ChenChun-Lien SuYin-Jen ChenMing-Shang Chen
    • Kuei-Yun ChenChun-Lien SuYin-Jen ChenMing-Shang Chen
    • B05D5/12
    • H01L27/115H01L27/11521
    • A method for manufacturing a NAND flash memory is provided. First, a substrate is provided. Next, a tunneling dielectric layer, a first conductive layer and a mask layer are sequentially formed on the substrate. Next, a plurality of isolation structures is formed in the mask layer, the first conductive layer, the tunneling dielectric layer and the substrate. Next, the mask layer is removed, so that the top surface of each isolation structure is higher than that of the first conductive layer. Next, a second conductive layer is formed on the exposed sidewalls of the isolation structures. Next, an inter-gate dielectric layer and a third conductive layer are sequentially formed on the substrate.
    • 提供一种制造NAND闪速存储器的方法。 首先,提供基板。 接下来,在衬底上依次形成隧穿介质层,第一导电层和掩模层。 接下来,在掩模层,第一导电层,隧道电介质层和基板中形成多个隔离结构。 接下来,去除掩模层,使得每个隔离结构的顶表面高于第一导电层的顶表面。 接下来,在隔离结构的暴露的侧壁上形成第二导电层。 接下来,在衬底上依次形成栅极间电介质层和第三导电层。