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    • 3. 发明授权
    • 5-aminolevulinic acid producing microorganism and process for producing
5-aminolevulinic acid
    • 5-氨基乙酰丙酸生产微生物和生产5-氨基乙酰丙酸的方法
    • US5763235A
    • 1998-06-09
    • US813088
    • 1997-03-07
    • Keitaro WatanabeSeiji NishikawaTohru TanakaYasushi Hotta
    • Keitaro WatanabeSeiji NishikawaTohru TanakaYasushi Hotta
    • C12P13/00
    • C12P13/005C12R1/01C12R1/19C12R1/38C12R1/85Y10S435/822
    • A microorganism that produces 5-aminolevulinic acid, wherein the microorganism has a 5-aminolevulinic acid dehydratase variant having a reduced inhibitor constant for a 5-aminolevulinic acid dehydratase inhibitor. A microorganism that produces 5-aminolevulinic acid, wherein the microorganism is a photosynthetic bacterium that produces 5-aminolevulinic acid without light irradiation. A process for producing 5-aminolevulinic acid comprising the step of culturing a microorganism that produces 5-aminolevulinic acid in a culture medium under at least one condition selected from the group consisting of (a) less than 1 ppm of dissolved oxygen concentration in the culture medium, (b) from -180 to 50 mV of oxidation-reduction potential in the culture medium, and (c from 5.times.10.sup.-9 to (KrM-2.times.10.sup.-8) (mol of O.sub.2 /ml.multidot.min.cndot.cell) of cellular respiration rate, wherein KrM represents the maximum cellular respiration rate when oxygen is supplied in an excess quantity.
    • 一种产生5-氨基乙酰丙酸的微生物,其中微生物具有5-氨基乙酰丙酸脱水酶抑制剂的抑制剂常数降低的5-氨基乙酰丙酸脱水酶变体。 产生5-氨基乙酰丙酸的微生物,其中所述微生物是不照射光而产生5-氨基乙酰丙酸的光合细菌。 一种生产5-氨基乙酰丙酸的方法,包括在选自以下的至少一种条件下培养在培养基中产生5-氨基乙酰丙酸的微生物的步骤:(a)在培养物中小于1ppm的溶解氧浓度 培养基中,(b)培养基中-180至50mV的氧化还原电位,和(c从5×10 -9至(KrM-2×10 -8)(O 2 / ml×Mincell)的细胞呼吸速率, 其中KrM表示当以超量供应氧气时的最大细胞呼吸速率。
    • 9. 发明申请
    • SILICON NITRIDE FILM OF SEMICONDUCTOR ELEMENT, AND METHOD AND APPARATUS FOR PRODUCING SILICON NITRIDE FILM
    • 半导体元件的氮化硅膜,以及生产氮化硅膜的方法和装置
    • US20130075875A1
    • 2013-03-28
    • US13638202
    • 2011-05-18
    • Seiji Nishikawa
    • Seiji Nishikawa
    • C01B21/068H01L21/02
    • C01B21/068C23C16/345C23C16/505H01L21/0217H01L21/02274
    • Disclosed are: a silicon nitride film of a semiconductor element, which is formed by applying a bias power and appropriately controls hydrogen leaving from the silicon nitride film; and a method and apparatus for producing a silicon nitride film. Specifically disclosed is a silicon nitride film which is formed on a substrate (19) by plasma processing and used in a semiconductor element. If the silicon nitride film is in contact with a film (41) to which supply of hydrogen is required to be shut off, the silicon nitride film is configured of a biased SiN (31) that is formed by applying a bias to the substrate (19) and an unbiased SiN (32) that is formed without applying a bias to the substrate (19) and the unbiased SiN (32) is arranged on the side on which the silicon nitride film is in contact with the film (41).
    • 公开了一种半导体元件的氮化硅膜,其通过施加偏压功率并适当地控制从氮化硅膜离开的氢; 以及用于制造氮化硅膜的方法和装置。 具体公开了通过等离子体处理形成在基板(19)上并用于半导体元件中的氮化硅膜。 如果氮化硅膜与需要切断氢气供应的膜(41)接触,则氮化硅膜由通过向衬底施加偏压形成的偏置SiN(31)构成, 并且在氮化硅膜与膜(41)接触的一侧配置无偏压SiN(32),而不施加偏压的无偏压SiN(32)和衬底(19)。